KR20060106170A - 다결정 실리콘 박막의 제조방법 및 이를 갖는 박막트랜지스터의 제조방법 - Google Patents

다결정 실리콘 박막의 제조방법 및 이를 갖는 박막트랜지스터의 제조방법 Download PDF

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Publication number
KR20060106170A
KR20060106170A KR1020050028628A KR20050028628A KR20060106170A KR 20060106170 A KR20060106170 A KR 20060106170A KR 1020050028628 A KR1020050028628 A KR 1020050028628A KR 20050028628 A KR20050028628 A KR 20050028628A KR 20060106170 A KR20060106170 A KR 20060106170A
Authority
KR
South Korea
Prior art keywords
thin film
silicon thin
laser beam
polycrystalline silicon
amorphous silicon
Prior art date
Application number
KR1020050028628A
Other languages
English (en)
Korean (ko)
Inventor
김동범
정세진
정의진
Original Assignee
삼성전자주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성전자주식회사 filed Critical 삼성전자주식회사
Priority to KR1020050028628A priority Critical patent/KR20060106170A/ko
Priority to TW094132677A priority patent/TWI390734B/zh
Priority to US11/234,609 priority patent/US7557050B2/en
Priority to CN2005101192796A priority patent/CN1848365B/zh
Priority to JP2005320302A priority patent/JP2006295117A/ja
Publication of KR20060106170A publication Critical patent/KR20060106170A/ko
Priority to US12/490,236 priority patent/US20090275178A1/en

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
    • B23K26/354—Working by laser beam, e.g. welding, cutting or boring for surface treatment by melting

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Nonlinear Science (AREA)
  • Optics & Photonics (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
KR1020050028628A 2005-04-06 2005-04-06 다결정 실리콘 박막의 제조방법 및 이를 갖는 박막트랜지스터의 제조방법 KR20060106170A (ko)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1020050028628A KR20060106170A (ko) 2005-04-06 2005-04-06 다결정 실리콘 박막의 제조방법 및 이를 갖는 박막트랜지스터의 제조방법
TW094132677A TWI390734B (zh) 2005-04-06 2005-09-21 製造多晶矽薄膜之方法及製造具有多晶矽薄膜之薄膜電晶體之方法
US11/234,609 US7557050B2 (en) 2005-04-06 2005-09-23 Method of manufacturing polysilicon thin film and method of manufacturing thin film transistor having the same
CN2005101192796A CN1848365B (zh) 2005-04-06 2005-11-01 多晶硅薄膜制造方法和具有其的薄膜晶体管的制造方法
JP2005320302A JP2006295117A (ja) 2005-04-06 2005-11-04 多結晶シリコン薄膜の製造方法、及びこれを有する薄膜トランジスタの製造方法
US12/490,236 US20090275178A1 (en) 2005-04-06 2009-06-23 Method of manufacturing polysilicon thin film and method of manufacturing thin film transistor having the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050028628A KR20060106170A (ko) 2005-04-06 2005-04-06 다결정 실리콘 박막의 제조방법 및 이를 갖는 박막트랜지스터의 제조방법

Publications (1)

Publication Number Publication Date
KR20060106170A true KR20060106170A (ko) 2006-10-12

Family

ID=37077862

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020050028628A KR20060106170A (ko) 2005-04-06 2005-04-06 다결정 실리콘 박막의 제조방법 및 이를 갖는 박막트랜지스터의 제조방법

Country Status (2)

Country Link
KR (1) KR20060106170A (zh)
CN (1) CN1848365B (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100852119B1 (ko) * 2007-03-20 2008-08-13 삼성에스디아이 주식회사 실리콘층 형성방법
KR100953657B1 (ko) * 2007-11-13 2010-04-20 삼성모바일디스플레이주식회사 박막트랜지스터 및 그 제조방법과 이를 구비하는유기전계발광표시장치

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI344210B (en) 2006-04-17 2011-06-21 Au Optronics Corp Polysilicon film having smooth surface and method of forming the same
CN102856173B (zh) * 2012-09-29 2015-03-18 京东方科技集团股份有限公司 一种多晶硅薄膜及其制备方法、阵列基板、显示装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005064453A (ja) * 2003-07-29 2005-03-10 Advanced Display Inc 薄膜トランジスタ及びその製造方法
JP4567984B2 (ja) * 2004-01-30 2010-10-27 株式会社 日立ディスプレイズ 平面表示装置の製造装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100852119B1 (ko) * 2007-03-20 2008-08-13 삼성에스디아이 주식회사 실리콘층 형성방법
KR100953657B1 (ko) * 2007-11-13 2010-04-20 삼성모바일디스플레이주식회사 박막트랜지스터 및 그 제조방법과 이를 구비하는유기전계발광표시장치

Also Published As

Publication number Publication date
CN1848365A (zh) 2006-10-18
CN1848365B (zh) 2010-04-07

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