KR20050114686A - 삼플루오르화질소 내 이플루오르화이질소 및사플루오르화이질소의 농도를 감소시키는 열적 방법 - Google Patents

삼플루오르화질소 내 이플루오르화이질소 및사플루오르화이질소의 농도를 감소시키는 열적 방법 Download PDF

Info

Publication number
KR20050114686A
KR20050114686A KR1020057017857A KR20057017857A KR20050114686A KR 20050114686 A KR20050114686 A KR 20050114686A KR 1020057017857 A KR1020057017857 A KR 1020057017857A KR 20057017857 A KR20057017857 A KR 20057017857A KR 20050114686 A KR20050114686 A KR 20050114686A
Authority
KR
South Korea
Prior art keywords
nitrogen trifluoride
dinitrogen
vessel
wall
group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020057017857A
Other languages
English (en)
Korean (ko)
Inventor
배리 아셀 말러
마리오 제이. 나파
Original Assignee
이 아이 듀폰 디 네모아 앤드 캄파니
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 이 아이 듀폰 디 네모아 앤드 캄파니 filed Critical 이 아이 듀폰 디 네모아 앤드 캄파니
Publication of KR20050114686A publication Critical patent/KR20050114686A/ko
Withdrawn legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/02—Apparatus characterised by being constructed of material selected for its chemically-resistant properties
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/082—Compounds containing nitrogen and non-metals and optionally metals
    • C01B21/083—Compounds containing nitrogen and non-metals and optionally metals containing one or more halogen atoms
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/0006—Controlling or regulating processes
    • B01J19/002—Avoiding undesirable reactions or side-effects, e.g. avoiding explosions, or improving the yield by suppressing side-reactions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/24—Stationary reactors without moving elements inside
    • B01J19/2415—Tubular reactors
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/082—Compounds containing nitrogen and non-metals and optionally metals
    • C01B21/083—Compounds containing nitrogen and non-metals and optionally metals containing one or more halogen atoms
    • C01B21/0832—Binary compounds of nitrogen with halogens
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/082—Compounds containing nitrogen and non-metals and optionally metals
    • C01B21/083—Compounds containing nitrogen and non-metals and optionally metals containing one or more halogen atoms
    • C01B21/0832—Binary compounds of nitrogen with halogens
    • C01B21/0835—Nitrogen trifluoride
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/00049—Controlling or regulating processes
    • B01J2219/00051—Controlling the temperature
    • B01J2219/00074—Controlling the temperature by indirect heating or cooling employing heat exchange fluids
    • B01J2219/00087—Controlling the temperature by indirect heating or cooling employing heat exchange fluids with heat exchange elements outside the reactor
    • B01J2219/00094—Jackets
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/00049—Controlling or regulating processes
    • B01J2219/00051—Controlling the temperature
    • B01J2219/00074—Controlling the temperature by indirect heating or cooling employing heat exchange fluids
    • B01J2219/00087—Controlling the temperature by indirect heating or cooling employing heat exchange fluids with heat exchange elements outside the reactor
    • B01J2219/00099—Controlling the temperature by indirect heating or cooling employing heat exchange fluids with heat exchange elements outside the reactor the reactor being immersed in the heat exchange medium
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/00049—Controlling or regulating processes
    • B01J2219/00051—Controlling the temperature
    • B01J2219/00132—Controlling the temperature using electric heating or cooling elements
    • B01J2219/00135—Electric resistance heaters
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/00049—Controlling or regulating processes
    • B01J2219/00051—Controlling the temperature
    • B01J2219/00157—Controlling the temperature by means of a burner
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/00049—Controlling or regulating processes
    • B01J2219/00245—Avoiding undesirable reactions or side-effects
    • B01J2219/00247—Fouling of the reactor or the process equipment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/00049—Controlling or regulating processes
    • B01J2219/00245—Avoiding undesirable reactions or side-effects
    • B01J2219/00252—Formation of deposits other than coke
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/02—Apparatus characterised by their chemically-resistant properties
    • B01J2219/0204—Apparatus characterised by their chemically-resistant properties comprising coatings on the surfaces in direct contact with the reactive components
    • B01J2219/0218—Apparatus characterised by their chemically-resistant properties comprising coatings on the surfaces in direct contact with the reactive components of ceramic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Filling Or Discharging Of Gas Storage Vessels (AREA)
KR1020057017857A 2003-03-25 2004-03-25 삼플루오르화질소 내 이플루오르화이질소 및사플루오르화이질소의 농도를 감소시키는 열적 방법 Withdrawn KR20050114686A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/396,926 2003-03-25
US10/396,926 US20040191155A1 (en) 2003-03-25 2003-03-25 Thermal process for reducing the concentration of dinitrogen difluoride and dinitrogen tetrafluoride in nitrogen trifluoride

Publications (1)

Publication Number Publication Date
KR20050114686A true KR20050114686A (ko) 2005-12-06

Family

ID=32988892

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020057017857A Withdrawn KR20050114686A (ko) 2003-03-25 2004-03-25 삼플루오르화질소 내 이플루오르화이질소 및사플루오르화이질소의 농도를 감소시키는 열적 방법

Country Status (10)

Country Link
US (1) US20040191155A1 (enExample)
EP (1) EP1606217A2 (enExample)
JP (1) JP2006521279A (enExample)
KR (1) KR20050114686A (enExample)
CN (1) CN1761615A (enExample)
CA (1) CA2514345A1 (enExample)
RU (1) RU2005132825A (enExample)
TW (1) TW200502161A (enExample)
WO (1) WO2004087569A2 (enExample)
ZA (1) ZA200505304B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ES2639621T3 (es) 2004-12-30 2017-10-27 Janssen Pharmaceutica N.V. Derivados de fenilamida del ácido 4-(bencil)-piperazina-1-carboxílico y compuestos relacionados como moduladores de la amida hidrolasa de ácidos grasos (FAAH) para el tratamiento de la ansiedad, el dolor y otras afecciones
CN1328160C (zh) * 2005-07-27 2007-07-25 中国船舶重工集团公司第七一八研究所 三氟化氮气体的纯化方法
US8201619B2 (en) * 2005-12-21 2012-06-19 Exxonmobil Research & Engineering Company Corrosion resistant material for reduced fouling, a heat transfer component having reduced fouling and a method for reducing fouling in a refinery
US8286695B2 (en) * 2005-12-21 2012-10-16 Exxonmobil Research & Engineering Company Insert and method for reducing fouling in a process stream
UA108233C2 (uk) 2010-05-03 2015-04-10 Модулятори активності гідролази амідів жирних кислот
CN104548927B (zh) * 2015-01-07 2017-01-25 黎明化工研究设计院有限责任公司 一种四氟化碳中微量三氟化氮的去除工艺
KR102366148B1 (ko) 2017-09-25 2022-02-23 사이머 엘엘씨 가스 방전 광원에서의 불소 검출 방법

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3032400A (en) * 1960-01-14 1962-05-01 Du Pont Method of producing nitrogen fluorides
DE1186857B (de) * 1962-09-22 1965-02-11 Huels Chemische Werke Ag Verwendung von elektropoliertem, nichtrostendem Stahl als Apparatematerial bei der Oxydation organischer Verbindungen
US4193976A (en) * 1978-04-06 1980-03-18 Air Products & Chemicals, Inc. Removal of dinitrogen difluoride from nitrogen trifluoride
US4156598A (en) * 1978-06-08 1979-05-29 Air Products And Chemicals, Inc. Purification of nitrogen trifluoride atmospheres
CA1318108C (en) * 1988-04-11 1993-05-25 Isao Harada Process for purifying nitrogen trifluoride gas
JPH01261208A (ja) * 1988-04-11 1989-10-18 Mitsui Toatsu Chem Inc 三弗化窒素ガスの精製方法
JPH01261209A (ja) * 1988-04-13 1989-10-18 Mitsui Toatsu Chem Inc 三弗化窒素ガスの精製方法
JPH0218309A (ja) * 1988-07-05 1990-01-22 Mitsui Toatsu Chem Inc 三弗化窒素ガスの精製方法
JP2867376B2 (ja) * 1988-12-09 1999-03-08 ステラケミファ株式会社 フッ化不動態膜が形成された金属材料、その金属材料を用いたガス装置、並びに該フッ化不動態膜の形成方法
US5009963A (en) * 1988-07-20 1991-04-23 Tadahiro Ohmi Metal material with film passivated by fluorination and apparatus composed of the metal material
EP0366078B1 (en) * 1988-10-25 1996-06-26 MITSUI TOATSU CHEMICALS, Inc. Method for Purifying nitrogen trifluoride gas
JPH0446672A (ja) * 1990-06-14 1992-02-17 Fuaiaaransu Kogyo Kk 継手付ランスパイプの製造方法及び継手付ランスパイプ
JP3782151B2 (ja) * 1996-03-06 2006-06-07 キヤノン株式会社 エキシマレーザー発振装置のガス供給装置
JP3532345B2 (ja) * 1996-05-14 2004-05-31 日本エア・リキード株式会社 超高純度三弗化窒素製造方法及びその装置
JPH11326160A (ja) * 1998-05-13 1999-11-26 L'air Liquide 反応性フッ素系ガスのサンプリング装置及び方法

Also Published As

Publication number Publication date
WO2004087569A2 (en) 2004-10-14
WO2004087569A3 (en) 2004-12-09
JP2006521279A (ja) 2006-09-21
TW200502161A (en) 2005-01-16
EP1606217A2 (en) 2005-12-21
CN1761615A (zh) 2006-04-19
CA2514345A1 (en) 2004-10-14
ZA200505304B (en) 2006-09-27
RU2005132825A (ru) 2006-01-27
US20040191155A1 (en) 2004-09-30

Similar Documents

Publication Publication Date Title
TWI266811B (en) Cleaning method for thin film formation system
KR940007091B1 (ko) 삼불화 질소가스의 정제방법
US20190161858A9 (en) Method and system for preparing polycrystalline group iii metal nitride
JPS595523B2 (ja) フツ化カ−ボンの製造法
JPWO2017221952A1 (ja) 多結晶シリコンロッド及びその製造方法
EP1807354A2 (en) Process for producing manganese fluoride
KR20050114686A (ko) 삼플루오르화질소 내 이플루오르화이질소 및사플루오르화이질소의 농도를 감소시키는 열적 방법
JPH10330150A (ja) 耐食性部材
CA1318108C (en) Process for purifying nitrogen trifluoride gas
EP1471039B1 (en) Method for producing a quartz glass jig
US3546036A (en) Process for etch-polishing sapphire and other oxides
JP3623054B2 (ja) プラズマプロセス装置用部材
JP2001240497A (ja) フッ化物単結晶製造方法及び製造装置
US5034208A (en) Process for preparing amorphous silicon
JPH0379288B2 (enExample)
GB1570131A (en) Manufacture of silicon
JP2006521279A5 (enExample)
JPH072510A (ja) テトラクロロシランの脱リン法
JP2005022971A (ja) プラズマプロセス装置用部材
CN111886674B (zh) 基板处理用气体、保管容器和基板处理方法
JPH04333570A (ja) Ｈｆガスによる窒化珪素のクリーニング方法
JPH1067584A (ja) 反応容器
JP2023123307A (ja) 膜製造方法
KR20000024977A (ko) 질화막의 제조방법
JPS5950086B2 (ja) 半導体用治具

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20050923

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid