KR20050105280A - 고 어스펙트비의 구멍을 가지는 작업물의 전기도금 방법 - Google Patents
고 어스펙트비의 구멍을 가지는 작업물의 전기도금 방법 Download PDFInfo
- Publication number
- KR20050105280A KR20050105280A KR1020057016921A KR20057016921A KR20050105280A KR 20050105280 A KR20050105280 A KR 20050105280A KR 1020057016921 A KR1020057016921 A KR 1020057016921A KR 20057016921 A KR20057016921 A KR 20057016921A KR 20050105280 A KR20050105280 A KR 20050105280A
- Authority
- KR
- South Korea
- Prior art keywords
- workpiece
- pulse
- current pulse
- electroplating
- aspect ratio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000034 method Methods 0.000 title claims abstract description 41
- 238000009713 electroplating Methods 0.000 title claims abstract description 27
- 238000007747 plating Methods 0.000 claims abstract description 69
- 230000002441 reversible effect Effects 0.000 claims abstract description 66
- 239000003792 electrolyte Substances 0.000 claims abstract description 55
- 229910052751 metal Inorganic materials 0.000 claims abstract description 38
- 239000002184 metal Substances 0.000 claims abstract description 38
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 34
- 229910052802 copper Inorganic materials 0.000 claims description 33
- 239000010949 copper Substances 0.000 claims description 33
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 claims description 11
- 229910001431 copper ion Inorganic materials 0.000 claims description 11
- 238000003756 stirring Methods 0.000 claims description 10
- 150000001875 compounds Chemical class 0.000 claims description 7
- 230000001590 oxidative effect Effects 0.000 claims description 6
- 150000002506 iron compounds Chemical class 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
- 238000004070 electrodeposition Methods 0.000 description 40
- 238000012360 testing method Methods 0.000 description 25
- 239000007921 spray Substances 0.000 description 13
- 239000000243 solution Substances 0.000 description 10
- 239000012530 fluid Substances 0.000 description 9
- 238000002474 experimental method Methods 0.000 description 8
- 238000009434 installation Methods 0.000 description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 8
- -1 iron ions Chemical class 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 238000013019 agitation Methods 0.000 description 6
- 229910000510 noble metal Inorganic materials 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- CWYNVVGOOAEACU-UHFFFAOYSA-N Fe2+ Chemical compound [Fe+2] CWYNVVGOOAEACU-UHFFFAOYSA-N 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 239000008151 electrolyte solution Substances 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- VTLYFUHAOXGGBS-UHFFFAOYSA-N Fe3+ Chemical compound [Fe+3] VTLYFUHAOXGGBS-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- BAUYGSIQEAFULO-UHFFFAOYSA-L iron(2+) sulfate (anhydrous) Chemical compound [Fe+2].[O-]S([O-])(=O)=O BAUYGSIQEAFULO-UHFFFAOYSA-L 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000000917 particle-image velocimetry Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000011835 investigation Methods 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 1
- OZECDDHOAMNMQI-UHFFFAOYSA-H cerium(3+);trisulfate Chemical compound [Ce+3].[Ce+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O OZECDDHOAMNMQI-UHFFFAOYSA-H 0.000 description 1
- 150000001805 chlorine compounds Chemical class 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 229910000457 iridium oxide Inorganic materials 0.000 description 1
- 229910000358 iron sulfate Inorganic materials 0.000 description 1
- SURQXAFEQWPFPV-UHFFFAOYSA-L iron(2+) sulfate heptahydrate Chemical compound O.O.O.O.O.O.O.[Fe+2].[O-]S([O-])(=O)=O SURQXAFEQWPFPV-UHFFFAOYSA-L 0.000 description 1
- 229910000359 iron(II) sulfate Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 229940099596 manganese sulfate Drugs 0.000 description 1
- 235000007079 manganese sulphate Nutrition 0.000 description 1
- 239000011702 manganese sulphate Substances 0.000 description 1
- SQQMAOCOWKFBNP-UHFFFAOYSA-L manganese(II) sulfate Chemical compound [Mn+2].[O-]S([O-])(=O)=O SQQMAOCOWKFBNP-UHFFFAOYSA-L 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000010907 mechanical stirring Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- 239000006259 organic additive Substances 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 238000010517 secondary reaction Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- PXLIDIMHPNPGMH-UHFFFAOYSA-N sodium chromate Chemical compound [Na+].[Na+].[O-][Cr]([O-])(=O)=O PXLIDIMHPNPGMH-UHFFFAOYSA-N 0.000 description 1
- CMZUMMUJMWNLFH-UHFFFAOYSA-N sodium metavanadate Chemical compound [Na+].[O-][V](=O)=O CMZUMMUJMWNLFH-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910000349 titanium oxysulfate Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/18—Electroplating using modulated, pulsed or reversing current
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/08—Electroplating with moving electrolyte e.g. jet electroplating
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/42—Plated through-holes or plated via connections
- H05K3/423—Plated through-holes or plated via connections characterised by electroplating method
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/14—Related to the order of processing steps
- H05K2203/1492—Periodical treatments, e.g. pulse plating of through-holes
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/15—Position of the PCB during processing
- H05K2203/1572—Processing both sides of a PCB by the same process; Providing a similar arrangement of components on both sides; Making interlayer connections from two sides
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electroplating Methods And Accessories (AREA)
- Electroplating And Plating Baths Therefor (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE10311575A DE10311575B4 (de) | 2003-03-10 | 2003-03-10 | Verfahren zum elektrolytischen Metallisieren von Werkstücken mit Bohrungen mit einem hohen Aspektverhältnis |
| DE10311575.7 | 2003-03-10 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20050105280A true KR20050105280A (ko) | 2005-11-03 |
Family
ID=32892263
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020057016921A Withdrawn KR20050105280A (ko) | 2003-03-10 | 2004-02-04 | 고 어스펙트비의 구멍을 가지는 작업물의 전기도금 방법 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20060151328A1 (enExample) |
| EP (1) | EP1601822A1 (enExample) |
| JP (1) | JP2006519931A (enExample) |
| KR (1) | KR20050105280A (enExample) |
| DE (1) | DE10311575B4 (enExample) |
| TW (1) | TW200502443A (enExample) |
| WO (1) | WO2004081262A1 (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101335480B1 (ko) * | 2006-03-30 | 2013-12-02 | 아토테크 도이칠란드 게엠베하 | 홀 및 캐비티를 금속으로 충전하기 위한 전기분해 방법 |
| KR20170089864A (ko) * | 2014-12-05 | 2017-08-04 | 아토테크더치랜드게엠베하 | 기판 상에 금속을 전기도금하는 방법 및 장치 |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7947161B2 (en) * | 2004-03-19 | 2011-05-24 | Faraday Technology, Inc. | Method of operating an electroplating cell with hydrodynamics facilitating more uniform deposition on a workpiece with through holes |
| US7553401B2 (en) * | 2004-03-19 | 2009-06-30 | Faraday Technology, Inc. | Electroplating cell with hydrodynamics facilitating more uniform deposition across a workpiece during plating |
| DE102004045451B4 (de) * | 2004-09-20 | 2007-05-03 | Atotech Deutschland Gmbh | Galvanisches Verfahren zum Füllen von Durchgangslöchern mit Metallen, insbesondere von Leiterplatten mit Kupfer |
| US20070063521A1 (en) * | 2004-12-03 | 2007-03-22 | Lancashire Christopher L | Method and apparatus for plating automotive bumpers |
| US8062496B2 (en) * | 2008-04-18 | 2011-11-22 | Integran Technologies Inc. | Electroplating method and apparatus |
| JP5425440B2 (ja) * | 2008-10-20 | 2014-02-26 | 株式会社Ｊｃｕ | 銅めっきにおけるウィスカーの抑制方法 |
| US20100206737A1 (en) * | 2009-02-17 | 2010-08-19 | Preisser Robert F | Process for electrodeposition of copper chip to chip, chip to wafer and wafer to wafer interconnects in through-silicon vias (tsv) |
| JP5504147B2 (ja) | 2010-12-21 | 2014-05-28 | 株式会社荏原製作所 | 電気めっき方法 |
| US9816193B2 (en) * | 2011-01-07 | 2017-11-14 | Novellus Systems, Inc. | Configuration and method of operation of an electrodeposition system for improved process stability and performance |
| JP5981455B2 (ja) | 2011-01-26 | 2016-08-31 | エンソン インコーポレイテッド | マイクロ電子工業におけるビアホール充填方法 |
| CN103179806B (zh) * | 2011-12-21 | 2019-05-28 | 奥特斯有限公司 | 组合的通孔镀覆和孔填充的方法 |
| US9816196B2 (en) | 2012-04-27 | 2017-11-14 | Novellus Systems, Inc. | Method and apparatus for electroplating semiconductor wafer when controlling cations in electrolyte |
| US9435048B2 (en) * | 2013-02-27 | 2016-09-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Layer by layer electro chemical plating (ECP) process |
| DE102013021586A1 (de) * | 2013-12-19 | 2015-06-25 | Ludy Galvanosysteme Gmbh | Verfahren und Vorrichtung zum elektrochemischen Behandeln von flachem Behandlungsgut |
| US10154598B2 (en) | 2014-10-13 | 2018-12-11 | Rohm And Haas Electronic Materials Llc | Filling through-holes |
| JP6906237B2 (ja) * | 2018-12-12 | 2021-07-21 | 奥野製薬工業株式会社 | 断続的電気めっき方法 |
| JP7478741B2 (ja) * | 2018-12-28 | 2024-05-07 | エーシーエム リサーチ （シャンハイ） インコーポレーテッド | めっき装置及びめっき方法 |
| CN110699725A (zh) * | 2019-11-21 | 2020-01-17 | 上海江南轧辊有限公司 | 一种液中放电沉积系统及其使用方法 |
| WO2021245766A1 (ja) * | 2020-06-02 | 2021-12-09 | 奥野製薬工業株式会社 | 断続的電気めっき方法 |
| NL2030054B1 (nl) * | 2021-12-07 | 2023-06-22 | Meco Equipment Eng B V | Inrichting en werkwijze voor het elektrolytisch behandelen van substraten. |
| CN114554727B (zh) * | 2022-03-31 | 2024-12-06 | 生益电子股份有限公司 | 一种实现高纵横比通盲孔的电镀方法及pcb |
| CN120425431B (zh) * | 2025-07-09 | 2025-11-07 | 阜阳师范大学 | 一种微孔电镀方法 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CH629542A5 (de) * | 1976-09-01 | 1982-04-30 | Inoue Japax Res | Verfahren und vorrichtung zur galvanischen materialablagerung. |
| DE4134632C1 (enExample) * | 1991-10-19 | 1993-04-01 | Schering Ag Berlin Und Bergkamen, 1000 Berlin, De | |
| DE4225961C5 (de) * | 1992-08-06 | 2011-01-27 | Atotech Deutschland Gmbh | Vorrichtung zur Galvanisierung, insbesondere Verkupferung, flacher platten- oder bogenförmiger Gegenstände |
| DE4344387C2 (de) * | 1993-12-24 | 1996-09-05 | Atotech Deutschland Gmbh | Verfahren zur elektrolytischen Abscheidung von Kupfer und Anordnung zur Durchführung des Verfahrens |
| DE19547948C1 (de) * | 1995-12-21 | 1996-11-21 | Atotech Deutschland Gmbh | Verfahren und Schaltungsanordnung zur Erzeugung von Strompulsen zur elektrolytischen Metallabscheidung |
| DE19717512C3 (de) * | 1997-04-25 | 2003-06-18 | Atotech Deutschland Gmbh | Vorrichtung zum Galvanisieren von Leiterplatten unter konstanten Bedingungen in Durchlaufanlagen |
| US6071398A (en) * | 1997-10-06 | 2000-06-06 | Learonal, Inc. | Programmed pulse electroplating process |
| US6210555B1 (en) * | 1999-01-29 | 2001-04-03 | Faraday Technology Marketing Group, Llc | Electrodeposition of metals in small recesses for manufacture of high density interconnects using reverse pulse plating |
| DE19915146C1 (de) * | 1999-01-21 | 2000-07-06 | Atotech Deutschland Gmbh | Verfahren zum galvanischen Bilden von Leiterstrukturen aus hochreinem Kupfer bei der Herstellung von integrierten Schaltungen |
| US6444110B2 (en) * | 1999-05-17 | 2002-09-03 | Shipley Company, L.L.C. | Electrolytic copper plating method |
| EP1069212A1 (en) * | 1999-07-12 | 2001-01-17 | Applied Materials, Inc. | Electrochemical deposition for high aspect ratio structures using electrical pulse modulation |
| US20040045832A1 (en) * | 1999-10-14 | 2004-03-11 | Nicholas Martyak | Electrolytic copper plating solutions |
| US6652727B2 (en) * | 1999-10-15 | 2003-11-25 | Faraday Technology Marketing Group, Llc | Sequential electrodeposition of metals using modulated electric fields for manufacture of circuit boards having features of different sizes |
| US6881318B2 (en) * | 2001-07-26 | 2005-04-19 | Applied Materials, Inc. | Dynamic pulse plating for high aspect ratio features |
-
2003
- 2003-03-10 DE DE10311575A patent/DE10311575B4/de not_active Expired - Fee Related
-
2004
- 2004-02-04 KR KR1020057016921A patent/KR20050105280A/ko not_active Withdrawn
- 2004-02-04 WO PCT/EP2004/002208 patent/WO2004081262A1/en not_active Ceased
- 2004-02-04 US US10/544,252 patent/US20060151328A1/en not_active Abandoned
- 2004-02-04 EP EP04707942A patent/EP1601822A1/en not_active Withdrawn
- 2004-03-04 JP JP2006504539A patent/JP2006519931A/ja not_active Ceased
- 2004-03-09 TW TW093106242A patent/TW200502443A/zh unknown
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101335480B1 (ko) * | 2006-03-30 | 2013-12-02 | 아토테크 도이칠란드 게엠베하 | 홀 및 캐비티를 금속으로 충전하기 위한 전기분해 방법 |
| KR20170089864A (ko) * | 2014-12-05 | 2017-08-04 | 아토테크더치랜드게엠베하 | 기판 상에 금속을 전기도금하는 방법 및 장치 |
Also Published As
| Publication number | Publication date |
|---|---|
| DE10311575B4 (de) | 2007-03-22 |
| TW200502443A (en) | 2005-01-16 |
| WO2004081262A1 (en) | 2004-09-23 |
| JP2006519931A (ja) | 2006-08-31 |
| US20060151328A1 (en) | 2006-07-13 |
| EP1601822A1 (en) | 2005-12-07 |
| WO2004081262A8 (en) | 2004-12-16 |
| DE10311575A1 (de) | 2004-09-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0105 | International application |
Patent event date: 20050909 Patent event code: PA01051R01D Comment text: International Patent Application |
|
| PG1501 | Laying open of application | ||
| PC1203 | Withdrawal of no request for examination | ||
| WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |