TW200502443A - Method of electroplating a workpiece having high-aspect ratio holes - Google Patents

Method of electroplating a workpiece having high-aspect ratio holes

Info

Publication number
TW200502443A
TW200502443A TW093106242A TW93106242A TW200502443A TW 200502443 A TW200502443 A TW 200502443A TW 093106242 A TW093106242 A TW 093106242A TW 93106242 A TW93106242 A TW 93106242A TW 200502443 A TW200502443 A TW 200502443A
Authority
TW
Taiwan
Prior art keywords
workpiece
aspect ratio
electroplating
ratio holes
current flow
Prior art date
Application number
TW093106242A
Other languages
English (en)
Chinese (zh)
Inventor
Bert Reents
Tafadzwa Magaya
Original Assignee
Atotech Deutschland Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Atotech Deutschland Gmbh filed Critical Atotech Deutschland Gmbh
Publication of TW200502443A publication Critical patent/TW200502443A/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/18—Electroplating using modulated, pulsed or reversing current
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/08—Electroplating with moving electrolyte e.g. jet electroplating
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/42—Plated through-holes or plated via connections
    • H05K3/423—Plated through-holes or plated via connections characterised by electroplating method
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/14—Related to the order of processing steps
    • H05K2203/1492—Periodical treatments, e.g. pulse plating of through-holes
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/15—Position of the PCB during processing
    • H05K2203/1572—Processing both sides of a PCB by the same process; Providing a similar arrangement of components on both sides; Making interlayer connections from two sides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
TW093106242A 2003-03-10 2004-03-09 Method of electroplating a workpiece having high-aspect ratio holes TW200502443A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE10311575A DE10311575B4 (de) 2003-03-10 2003-03-10 Verfahren zum elektrolytischen Metallisieren von Werkstücken mit Bohrungen mit einem hohen Aspektverhältnis

Publications (1)

Publication Number Publication Date
TW200502443A true TW200502443A (en) 2005-01-16

Family

ID=32892263

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093106242A TW200502443A (en) 2003-03-10 2004-03-09 Method of electroplating a workpiece having high-aspect ratio holes

Country Status (7)

Country Link
US (1) US20060151328A1 (enExample)
EP (1) EP1601822A1 (enExample)
JP (1) JP2006519931A (enExample)
KR (1) KR20050105280A (enExample)
DE (1) DE10311575B4 (enExample)
TW (1) TW200502443A (enExample)
WO (1) WO2004081262A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107109677A (zh) * 2014-12-05 2017-08-29 埃托特克德国有限公司 用来在衬底上电镀金属的方法及设备

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US7947161B2 (en) * 2004-03-19 2011-05-24 Faraday Technology, Inc. Method of operating an electroplating cell with hydrodynamics facilitating more uniform deposition on a workpiece with through holes
US7553401B2 (en) * 2004-03-19 2009-06-30 Faraday Technology, Inc. Electroplating cell with hydrodynamics facilitating more uniform deposition across a workpiece during plating
DE102004045451B4 (de) * 2004-09-20 2007-05-03 Atotech Deutschland Gmbh Galvanisches Verfahren zum Füllen von Durchgangslöchern mit Metallen, insbesondere von Leiterplatten mit Kupfer
US20070063521A1 (en) * 2004-12-03 2007-03-22 Lancashire Christopher L Method and apparatus for plating automotive bumpers
ATE484943T1 (de) 2006-03-30 2010-10-15 Atotech Deutschland Gmbh Elektrolytisches verfahren zum füllen von löchern und vertiefungen mit metallen
US8062496B2 (en) * 2008-04-18 2011-11-22 Integran Technologies Inc. Electroplating method and apparatus
JP5425440B2 (ja) * 2008-10-20 2014-02-26 株式会社Ｊｃｕ 銅めっきにおけるウィスカーの抑制方法
US20100206737A1 (en) * 2009-02-17 2010-08-19 Preisser Robert F Process for electrodeposition of copper chip to chip, chip to wafer and wafer to wafer interconnects in through-silicon vias (tsv)
JP5504147B2 (ja) 2010-12-21 2014-05-28 株式会社荏原製作所 電気めっき方法
US9816193B2 (en) * 2011-01-07 2017-11-14 Novellus Systems, Inc. Configuration and method of operation of an electrodeposition system for improved process stability and performance
JP5981455B2 (ja) 2011-01-26 2016-08-31 エンソン インコーポレイテッド マイクロ電子工業におけるビアホール充填方法
CN103179806B (zh) * 2011-12-21 2019-05-28 奥特斯有限公司 组合的通孔镀覆和孔填充的方法
US9816196B2 (en) 2012-04-27 2017-11-14 Novellus Systems, Inc. Method and apparatus for electroplating semiconductor wafer when controlling cations in electrolyte
US9435048B2 (en) * 2013-02-27 2016-09-06 Taiwan Semiconductor Manufacturing Co., Ltd. Layer by layer electro chemical plating (ECP) process
DE102013021586A1 (de) * 2013-12-19 2015-06-25 Ludy Galvanosysteme Gmbh Verfahren und Vorrichtung zum elektrochemischen Behandeln von flachem Behandlungsgut
US10154598B2 (en) 2014-10-13 2018-12-11 Rohm And Haas Electronic Materials Llc Filling through-holes
JP6906237B2 (ja) * 2018-12-12 2021-07-21 奥野製薬工業株式会社 断続的電気めっき方法
JP7478741B2 (ja) * 2018-12-28 2024-05-07 エーシーエム リサーチ （シャンハイ） インコーポレーテッド めっき装置及びめっき方法
CN110699725A (zh) * 2019-11-21 2020-01-17 上海江南轧辊有限公司 一种液中放电沉积系统及其使用方法
WO2021245766A1 (ja) * 2020-06-02 2021-12-09 奥野製薬工業株式会社 断続的電気めっき方法
NL2030054B1 (nl) * 2021-12-07 2023-06-22 Meco Equipment Eng B V Inrichting en werkwijze voor het elektrolytisch behandelen van substraten.
CN114554727B (zh) * 2022-03-31 2024-12-06 生益电子股份有限公司 一种实现高纵横比通盲孔的电镀方法及pcb
CN120425431B (zh) * 2025-07-09 2025-11-07 阜阳师范大学 一种微孔电镀方法

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CH629542A5 (de) * 1976-09-01 1982-04-30 Inoue Japax Res Verfahren und vorrichtung zur galvanischen materialablagerung.
DE4134632C1 (enExample) * 1991-10-19 1993-04-01 Schering Ag Berlin Und Bergkamen, 1000 Berlin, De
DE4225961C5 (de) * 1992-08-06 2011-01-27 Atotech Deutschland Gmbh Vorrichtung zur Galvanisierung, insbesondere Verkupferung, flacher platten- oder bogenförmiger Gegenstände
DE4344387C2 (de) * 1993-12-24 1996-09-05 Atotech Deutschland Gmbh Verfahren zur elektrolytischen Abscheidung von Kupfer und Anordnung zur Durchführung des Verfahrens
DE19547948C1 (de) * 1995-12-21 1996-11-21 Atotech Deutschland Gmbh Verfahren und Schaltungsanordnung zur Erzeugung von Strompulsen zur elektrolytischen Metallabscheidung
DE19717512C3 (de) * 1997-04-25 2003-06-18 Atotech Deutschland Gmbh Vorrichtung zum Galvanisieren von Leiterplatten unter konstanten Bedingungen in Durchlaufanlagen
US6071398A (en) * 1997-10-06 2000-06-06 Learonal, Inc. Programmed pulse electroplating process
US6210555B1 (en) * 1999-01-29 2001-04-03 Faraday Technology Marketing Group, Llc Electrodeposition of metals in small recesses for manufacture of high density interconnects using reverse pulse plating
DE19915146C1 (de) * 1999-01-21 2000-07-06 Atotech Deutschland Gmbh Verfahren zum galvanischen Bilden von Leiterstrukturen aus hochreinem Kupfer bei der Herstellung von integrierten Schaltungen
US6444110B2 (en) * 1999-05-17 2002-09-03 Shipley Company, L.L.C. Electrolytic copper plating method
EP1069212A1 (en) * 1999-07-12 2001-01-17 Applied Materials, Inc. Electrochemical deposition for high aspect ratio structures using electrical pulse modulation
US20040045832A1 (en) * 1999-10-14 2004-03-11 Nicholas Martyak Electrolytic copper plating solutions
US6652727B2 (en) * 1999-10-15 2003-11-25 Faraday Technology Marketing Group, Llc Sequential electrodeposition of metals using modulated electric fields for manufacture of circuit boards having features of different sizes
US6881318B2 (en) * 2001-07-26 2005-04-19 Applied Materials, Inc. Dynamic pulse plating for high aspect ratio features

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107109677A (zh) * 2014-12-05 2017-08-29 埃托特克德国有限公司 用来在衬底上电镀金属的方法及设备
CN107109677B (zh) * 2014-12-05 2019-04-09 埃托特克德国有限公司 用来在衬底上电镀金属的方法及设备

Also Published As

Publication number Publication date
DE10311575B4 (de) 2007-03-22
WO2004081262A1 (en) 2004-09-23
JP2006519931A (ja) 2006-08-31
KR20050105280A (ko) 2005-11-03
US20060151328A1 (en) 2006-07-13
EP1601822A1 (en) 2005-12-07
WO2004081262A8 (en) 2004-12-16
DE10311575A1 (de) 2004-09-23

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