KR20050084150A - 포지티브형 상 형성 가능 후막 조성물 - Google Patents

포지티브형 상 형성 가능 후막 조성물 Download PDF

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Publication number
KR20050084150A
KR20050084150A KR1020057010117A KR20057010117A KR20050084150A KR 20050084150 A KR20050084150 A KR 20050084150A KR 1020057010117 A KR1020057010117 A KR 1020057010117A KR 20057010117 A KR20057010117 A KR 20057010117A KR 20050084150 A KR20050084150 A KR 20050084150A
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KR
South Korea
Prior art keywords
composition
film
acrylate
patterned structure
group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020057010117A
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English (en)
Korean (ko)
Inventor
데이빗 허버트 로치
영 에이치. 김
랩-탁 앤드류 쳉
Original Assignee
이 아이 듀폰 디 네모아 앤드 캄파니
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 이 아이 듀폰 디 네모아 앤드 캄파니 filed Critical 이 아이 듀폰 디 네모아 앤드 캄파니
Publication of KR20050084150A publication Critical patent/KR20050084150A/ko
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
  • Electrodes For Cathode-Ray Tubes (AREA)
  • Manufacture Of Macromolecular Shaped Articles (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Discharge Lamps And Accessories Thereof (AREA)
KR1020057010117A 2002-12-06 2003-12-05 포지티브형 상 형성 가능 후막 조성물 Ceased KR20050084150A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US43139202P 2002-12-06 2002-12-06
US60/431,392 2002-12-06

Publications (1)

Publication Number Publication Date
KR20050084150A true KR20050084150A (ko) 2005-08-26

Family

ID=32507722

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020057010117A Ceased KR20050084150A (ko) 2002-12-06 2003-12-05 포지티브형 상 형성 가능 후막 조성물

Country Status (7)

Country Link
US (2) US20040170925A1 (enExample)
EP (1) EP1567917A2 (enExample)
JP (1) JP2006510046A (enExample)
KR (1) KR20050084150A (enExample)
CN (1) CN1742233A (enExample)
AU (1) AU2003293441A1 (enExample)
WO (1) WO2004053593A2 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101034346B1 (ko) * 2006-12-22 2011-05-16 주식회사 엘지화학 탄소 나노 튜브를 통한 내열성 개선의 감광성 수지 조성물
KR20150050530A (ko) * 2012-08-31 2015-05-08 후지필름 가부시키가이샤 감광성 수지 조성물, 경화물과 그 제조 방법, 수지 패턴 제조 방법, 경화막, 액정 표시 장치, 유기 el 표시 장치, 및 터치 패널 표시 장치

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WO2004047166A2 (en) * 2002-11-15 2004-06-03 E.I. Du Pont De Nemours And Company Process for using protective layers in the fabrication of electronic devices
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JP4211782B2 (ja) * 2003-11-25 2009-01-21 株式会社村田製作所 厚膜パターンの形成方法、電子部品の製造方法
US7402373B2 (en) * 2004-02-05 2008-07-22 E.I. Du Pont De Nemours And Company UV radiation blocking protective layers compatible with thick film pastes
KR101042667B1 (ko) * 2004-07-05 2011-06-20 주식회사 동진쎄미켐 포토레지스트 조성물
KR20060090520A (ko) * 2005-02-07 2006-08-11 삼성전자주식회사 감광성 수지 및 상기 감광성 수지로 이루어진 패턴을포함하는 박막 표시판 및 그 제조 방법
US7524606B2 (en) * 2005-04-11 2009-04-28 Az Electronic Materials Usa Corp. Nanocomposite photoresist composition for imaging thick films
US7247419B2 (en) 2005-04-11 2007-07-24 Az Electronic Materials Usa Corp. Nanocomposite photosensitive composition and use thereof
JP4861767B2 (ja) 2005-07-26 2012-01-25 富士フイルム株式会社 ポジ型レジスト組成物およびそれを用いたパターン形成方法
KR101166016B1 (ko) * 2006-04-26 2012-07-19 삼성에스디아이 주식회사 전자 방출원 형성용 조성물, 이로부터 제조된 전자 방출원및 상기 전자 방출원을 구비한 전자 방출 소자
JP4751773B2 (ja) * 2006-06-09 2011-08-17 太陽ホールディングス株式会社 光硬化性組成物及びそれを用いて形成した焼成物パターン
KR101423801B1 (ko) * 2006-11-28 2014-07-25 도쿄 오카 고교 가부시키가이샤 후막용 화학증폭형 포지티브형 포토레지스트 조성물, 후막용 화학증폭형 드라이 필름 및 후막 레지스트 패턴의 제조 방법
US8310069B2 (en) * 2007-10-05 2012-11-13 Texas Instruements Incorporated Semiconductor package having marking layer
CN101861282A (zh) * 2007-11-15 2010-10-13 纳幕尔杜邦公司 碳纳米管的保护
US20110012035A1 (en) * 2009-07-15 2011-01-20 Texas Instruments Incorporated Method for Precision Symbolization Using Digital Micromirror Device Technology
US20140267107A1 (en) 2013-03-15 2014-09-18 Sinovia Technologies Photoactive Transparent Conductive Films
US20130189524A1 (en) * 2012-01-19 2013-07-25 Brewer Science Inc. Viscous fugitive polymer-based carbon nanotube coatings
TW201421154A (zh) * 2012-10-26 2014-06-01 Fujifilm Corp 感光性樹脂組成物、硬化物及其製造方法、樹脂圖案製造方法、硬化膜、有機ｅｌ顯示裝置、液晶顯示裝置以及觸控面板顯示裝置
JP6564196B2 (ja) * 2014-03-20 2019-08-21 東京応化工業株式会社 厚膜用化学増幅型ポジ型感光性樹脂組成物
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101034346B1 (ko) * 2006-12-22 2011-05-16 주식회사 엘지화학 탄소 나노 튜브를 통한 내열성 개선의 감광성 수지 조성물
KR20150050530A (ko) * 2012-08-31 2015-05-08 후지필름 가부시키가이샤 감광성 수지 조성물, 경화물과 그 제조 방법, 수지 패턴 제조 방법, 경화막, 액정 표시 장치, 유기 el 표시 장치, 및 터치 패널 표시 장치

Also Published As

Publication number Publication date
AU2003293441A8 (en) 2004-06-30
CN1742233A (zh) 2006-03-01
WO2004053593A2 (en) 2004-06-24
AU2003293441A1 (en) 2004-06-30
US20080166666A1 (en) 2008-07-10
US20040170925A1 (en) 2004-09-02
EP1567917A2 (en) 2005-08-31
JP2006510046A (ja) 2006-03-23
WO2004053593A3 (en) 2004-10-28

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