CN100592207C - 厚膜膏料层的粘合剂扩散转印图案 - Google Patents
厚膜膏料层的粘合剂扩散转印图案 Download PDFInfo
- Publication number
- CN100592207C CN100592207C CN200480002598A CN200480002598A CN100592207C CN 100592207 C CN100592207 C CN 100592207C CN 200480002598 A CN200480002598 A CN 200480002598A CN 200480002598 A CN200480002598 A CN 200480002598A CN 100592207 C CN100592207 C CN 100592207C
- Authority
- CN
- China
- Prior art keywords
- thick film
- film paste
- photoresist
- polymkeric substance
- polymer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000009792 diffusion process Methods 0.000 title claims abstract description 13
- 238000000059 patterning Methods 0.000 title claims description 14
- 239000011230 binding agent Substances 0.000 title description 10
- 238000000034 method Methods 0.000 claims abstract description 38
- 229920000642 polymer Polymers 0.000 claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 229920002120 photoresistant polymer Polymers 0.000 claims description 49
- 239000000126 substance Substances 0.000 claims description 13
- 239000002904 solvent Substances 0.000 claims description 12
- 229920003986 novolac Polymers 0.000 claims description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 7
- 238000005245 sintering Methods 0.000 claims description 6
- 239000002041 carbon nanotube Substances 0.000 claims description 5
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 5
- 239000003960 organic solvent Substances 0.000 claims description 5
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 claims description 4
- 229920001577 copolymer Polymers 0.000 claims description 3
- 238000004090 dissolution Methods 0.000 claims description 3
- 239000001856 Ethyl cellulose Substances 0.000 claims description 2
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 claims description 2
- 239000004793 Polystyrene Substances 0.000 claims description 2
- 239000003795 chemical substances by application Substances 0.000 claims description 2
- 229920001249 ethyl cellulose Polymers 0.000 claims description 2
- 235000019325 ethyl cellulose Nutrition 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 239000000178 monomer Substances 0.000 claims description 2
- 229920002223 polystyrene Polymers 0.000 claims description 2
- 239000000843 powder Substances 0.000 claims description 2
- 230000000977 initiatory effect Effects 0.000 claims 1
- 230000002186 photoactivation Effects 0.000 claims 1
- 235000013824 polyphenols Nutrition 0.000 claims 1
- 229920006254 polymer film Polymers 0.000 abstract description 8
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 239000003513 alkali Substances 0.000 description 10
- 239000010410 layer Substances 0.000 description 8
- 239000000243 solution Substances 0.000 description 7
- 239000000203 mixture Substances 0.000 description 6
- 238000001259 photo etching Methods 0.000 description 6
- 230000003321 amplification Effects 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 238000001035 drying Methods 0.000 description 5
- 230000005684 electric field Effects 0.000 description 5
- 239000003292 glue Substances 0.000 description 5
- 238000003199 nucleic acid amplification method Methods 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- HEMHJVSKTPXQMS-UHFFFAOYSA-M sodium hydroxide Inorganic materials [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 5
- 230000004913 activation Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- DAFHKNAQFPVRKR-UHFFFAOYSA-N (3-hydroxy-2,2,4-trimethylpentyl) 2-methylpropanoate Chemical compound CC(C)C(O)C(C)(C)COC(=O)C(C)C DAFHKNAQFPVRKR-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 239000000428 dust Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- RUJPNZNXGCHGID-UHFFFAOYSA-N (Z)-beta-Terpineol Natural products CC(=C)C1CCC(C)(O)CC1 RUJPNZNXGCHGID-UHFFFAOYSA-N 0.000 description 2
- HIXDQWDOVZUNNA-UHFFFAOYSA-N 2-(3,4-dimethoxyphenyl)-5-hydroxy-7-methoxychromen-4-one Chemical compound C=1C(OC)=CC(O)=C(C(C=2)=O)C=1OC=2C1=CC=C(OC)C(OC)=C1 HIXDQWDOVZUNNA-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- MWKFXSUHUHTGQN-UHFFFAOYSA-N decan-1-ol Chemical compound CCCCCCCCCCO MWKFXSUHUHTGQN-UHFFFAOYSA-N 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 150000002148 esters Chemical class 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 239000003112 inhibitor Substances 0.000 description 2
- 150000002576 ketones Chemical class 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- -1 phenolic aldehyde Chemical class 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- QJVXKWHHAMZTBY-GCPOEHJPSA-N syringin Chemical compound COC1=CC(\C=C\CO)=CC(OC)=C1O[C@H]1[C@H](O)[C@@H](O)[C@H](O)[C@@H](CO)O1 QJVXKWHHAMZTBY-GCPOEHJPSA-N 0.000 description 2
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229940126062 Compound A Drugs 0.000 description 1
- 239000004821 Contact adhesive Substances 0.000 description 1
- NLDMNSXOCDLTTB-UHFFFAOYSA-N Heterophylliin A Natural products O1C2COC(=O)C3=CC(O)=C(O)C(O)=C3C3=C(O)C(O)=C(O)C=C3C(=O)OC2C(OC(=O)C=2C=C(O)C(O)=C(O)C=2)C(O)C1OC(=O)C1=CC(O)=C(O)C(O)=C1 NLDMNSXOCDLTTB-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 239000005456 alcohol based solvent Substances 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 150000001491 aromatic compounds Chemical class 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 150000002168 ethanoic acid esters Chemical class 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 150000005204 hydroxybenzenes Chemical class 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 239000004922 lacquer Substances 0.000 description 1
- 238000001208 nuclear magnetic resonance pulse sequence Methods 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 239000013047 polymeric layer Substances 0.000 description 1
- 229920002689 polyvinyl acetate Polymers 0.000 description 1
- 239000011118 polyvinyl acetate Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001694 spray drying Methods 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4867—Applying pastes or inks, e.g. screen printing
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
- H05K1/092—Dispersed materials, e.g. conductive pastes or inks
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/05—Patterning and lithography; Masks; Details of resist
- H05K2203/0502—Patterning and lithography
- H05K2203/0511—Diffusion patterning
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/05—Patterning and lithography; Masks; Details of resist
- H05K2203/0502—Patterning and lithography
- H05K2203/0525—Patterning by phototackifying or by photopatterning adhesive
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Structural Engineering (AREA)
- Architecture (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Cold Cathode And The Manufacture (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
Abstract
本发明涉及一个用于制造电气和电子设备的工艺。在衬底上图案化聚合物膜。在图案化聚合物上沉积厚膜膏料。在使得聚合物扩散到厚膜膏料中的条件下干燥厚膜膏料。这样使得扩散区在碱显影液中不溶。
Description
发明技术领域
本发明涉及一种利用光刻胶和厚膜膏料(paste)的聚合物膜制造电气和电子设备的方法。该方法可提供高分辨率的厚膜膏料沉积物。本发明还涉及利用由图案化(patterned)聚合物或光刻胶制成的扩散层以图案化厚膜膏料制备的设备。
技术背景
Bouchard等人(WO 01/99146)描述了用于改进场发射器的场发射器组合物和方法,但是没有提到与设备制造中所用其它部件或材料组合物的兼容性。
Fukuda等人(US5601638)描述了应用2-四癸醇溶剂的厚膜膏料,但是没有讨论带有光刻胶保护层与膏料和它的溶剂的兼容性。
发明概述
本发明描述一种用于制造电气或电子设备的方法,该设备包括沉积在图案化聚合物或光刻胶上的厚膜膏料。然后加热该结构以使聚合物膜或光刻胶扩散到厚膜膏料中。
本发明包括的方法包括:
a)在衬底上沉积图案化聚合物A膜;
b)在图案化聚合物A的膜上沉积厚膜膏料;
c)在图案化聚合物A扩散到膏料层中的过程中干燥厚膜膏料,由此将图案转印到膏料层上;及
d)通过曝光膏料层,然后放入对聚合物A有低溶解度的膏料显影液中,从聚合物A没有扩散到的区域中去除过剩的厚膜膏料。
本发明还包括方法,其包括:
a)在衬底上沉积正性光刻胶;
b)在光刻胶上遮蔽图案;
c)穿过图案化掩模的光曝光光刻胶;
d)显影该光刻胶;
e)在图案化光刻胶上面沉积厚膜膏料;
f)干燥厚膜膏料;
g)去除过剩的没有与光刻胶混合的厚膜膏料。
本发明还进一步公开了上述方法,其进一步包含对由厚膜膏料图案化的衬底进行烧结(firing)的额外步骤。
另外,本发明还描述了作为进一步包含活化厚膜膏料步骤的上述方法。
本发明还包含由上述第一或第二上述方法制造的电气或电子设备。
附图简述
图1示出在聚合物膜为光刻胶的地方粘合剂扩散转印成像的加工步骤。
图2示出在光刻胶显影后的光刻胶正方形(square)。
图3示出在碱液中膏料洗去后的碳纳米管膏料正方形。
图4示出与在扩散转印期间存在的光刻胶对比的膏料尺度增量。
图5示出通过碳纳米管膏料正方形的阵列形成的阳极的电场发射照明。
发明的详述
本发明涉及一个新颖的方法,该方法中在衬底上形成聚合物A膜的图案。选择聚合物A以在后来应用的厚膜膏料的溶剂中是可溶的。该溶剂是如酮、醇、酯、醚、及芳香烃、包括但不受限制的为texanol和β-萜品醇的有机溶剂。聚合物A可以是,但不受限制的为酚醛树脂、DNQ/线形酚醛清漆光刻胶(Novalac resists)、丙烯酸树脂、带有侧挂叔丁基官能团的聚合物、聚苯乙烯、以及乙基纤维素。
聚合物A膜的图案可以由包含但不受限制的油印(stencil printing)、喷墨印刷、光图形化(photopatterning)的各种方式形成。对于光图形化,聚合物A为光刻胶。该光刻胶可以为线形酚醛清漆型正性光刻胶或化学放大型正性光刻胶。
在聚合物A膜的沉积和图案化后,在聚合物A的图案上面沉积利用碱可溶粘合剂和有机溶剂配制的厚膜膏料。可以采用丝网印刷(screenprinting)技术使厚膜膏料沉积。在沉积后,在温度为50℃到100℃之间于燥所得的厚膜膏料膜15到60分钟。在该干燥期间,厚膜膏料溶剂包括引起图案化的聚合物A溶解,以及随后混合聚合物A扩散进入厚膜膏料沉积物中。在干燥步骤期间,聚合物A扩散进入厚膜膏料沉积物的范围能被如干燥温度和时间的参数控制。它还能通过选择厚膜膏料的溶剂以控制。由于聚合物A(例如线形酚醛清漆型光刻胶)在碱性膏料显影液中不溶,所以在干燥期间它扩散到厚膜膏料中将使得膏料的扩散区在碱显影液中不溶。随后的显影步骤,无论是碱喷淋或超声波处理,引起从不存在聚合物A的区域去除厚膜膏料沉积。在包含厚膜膏料沉积的电气和电子设备的制造中该新颖的方法是很有用的。
本发明的方法在获得厚膜膏料的细微特征图案中是很有用的,该厚膜膏料本身由丝网印刷或油印仅具有有限的图案化分辨率。各种厚膜膏料的光图形化常由膏料的固体组分限制,该膏料易于减少一些厚膜膏料的光学透明度。通过从厚膜膏料到第二聚合物层分离图案化方法,粘合剂扩散转印形成图案法提供获得厚膜膏料的细微特征图案的简单方法。
它尤其方便的是采用光刻胶聚合物用于细微特征图案构造。光刻胶可以包括聚合物、溶解抑制剂、单体、光引发剂、光产酸剂、和/或溶剂。厚膜膏料包含玻璃粉、无机粉末、金属粉末、粘合剂聚合物、光-活化单体、引发剂和/或溶剂。在显示器中用作电场发光器的特定厚膜膏料还包含碳纳米管。
如本领域熟练技术人员经常实践的一样,如DNQ/线形酚醛清漆和化学放大型光刻胶的普通的光刻胶可用于细微特征图形化中。常规就可获得1微米下的特征尺寸。在DNQ/线形酚醛清漆型光刻胶、DNQ作为一种溶解抑制剂通过在紫外线辐射下曝光而分解,使得在弱碱显影液中曝光区域溶解。在化学放大型光刻胶中,光刻胶配方中包含光产酸剂。在辐射下产生的酸能从光刻胶聚合物中去除叔丁基。随着叔丁基的去除,聚合物在碱或碱性显影液中变得可溶。光刻胶的未曝光区域在碱或碱性显影液中是高抗溶性的。此外,这些光刻胶在大多数有机溶剂如酮、醇、酯、醚、长链的乙酸酯和芳族化合物中是典型的高度溶解的。包括但不受限制的texanol和β-萜品醇的这些溶剂也常常可以用于配制许多厚膜膏料。对于利用碱溶的粘合剂聚合物配制的厚膜膏料,通过由碱显影液喷淋或在显影液中浸渍的同时通过超声波作用激发可以容易的洗掉干燥的膏料膜。用能溶解膏料粘合剂聚合物和聚合物A的溶液体系配制厚膜膏料。另外在显影溶剂中或聚合物A溶解性较差的溶液中膏料粘合剂聚合物为可溶的。膏料粘合剂聚合物可以是但不受限制的为带有羧基的丙烯酸聚合物,带有酸基团的丙烯酸聚合物、聚乙烯醇、聚乙烯醇和聚乙酸乙烯酯的共聚物、及聚羟基苯乙烯。本发明中公开的通过粘合剂扩散转印形成图案方法、通过将线形酚醛清漆型或化学放大型光刻胶和碱可溶厚膜膏料一起使用,可以获得厚膜膏料的细微特征图案。
本发明描述的方法中,得到的厚膜膏料沉积的特征尺寸与聚合物膜或光刻胶中图案的特征尺寸相关但是不相同。由于控制扩散方法的性质,同最初的聚合物或光刻胶图案元件相比,干燥的厚膜膏料沉积的膨胀通常为约30%到50%。然而该膨胀能通过控制如聚合物层的厚度、干燥温度、干燥时间、以及选择膏料溶剂的各种工艺参数来控制或限制。
图1图解了应用本发明方法的电子设备制造工艺。在衬底(1)顶部沉积光刻胶。光刻胶通常为DNQ/线形酚醛清漆型。可应用的其它类型光刻胶为如化学放大型光刻胶(IBM的APEX光刻胶)。外部的光掩模(2)被放在光刻胶顶部并与其紧密接触,然后放到UV照射下从光掩模的顶部将其曝光。在适度的碱性水溶液(例如1%的氢氧化钠)中显影(3)光刻胶。由于线形酚醛清漆或化学放大型光刻胶在正型中起作用,光刻胶的曝光区被溶解显露出衬底表面。基于有机溶剂且可显影的厚膜膏料(4)然后在其上涂覆光刻胶的衬底表面,并填充由光刻胶层的光显影产生的空穴的衬底上沉积。然后在50℃到100℃下将厚膜膏料沉积物干燥15到60分钟(5),该期间在厚膜膏料中溶剂引发线形酚醛清漆光刻胶混合进入厚膜膏料,因此使得混合区在碱性显影液不溶。然后通过碱水溶液(如0.5%的碳酸钠)喷淋或超声波处理显影(6)厚膜膏料,以去除光刻胶与厚膜膏料没有混合的膏料。
在这工艺的阶段中该厚膜膏料设备可有用地作为烧成厚膜膏料制造过程的中间物。然后在大气下或惰性气体环境中在300℃到800℃下将干燥的和显影的图案化厚膜膏料和光刻胶的混合物烧结5到30分钟。然后在焙烧(firing)步骤中烧除包含混合的光刻胶的有机组成,留下烧结(sintered)的厚膜膏料。
Bouchard等人(WO 01/99146)描述了用来作为场发射器的包含碳纳米管的厚膜膏料和作为明显有效改善场发射性能的方法。该改善方法包含层压带有聚合物膜的厚膜膏料沉积物,然后剥离层压膜。对于设计用于场发射器的厚膜膏料,该激活步骤也能实施。
实施例
以下的实施例解释了在电场发射设备的制造中使用粘合剂扩散转印方法图案化包含碳纳米管的厚膜膏料。
从Clariant Cooperation获得的线形酚醛清漆型光刻胶AZ4620被旋涂到被涂覆ITO的玻璃衬底上。所使用的旋转速度为3000rpm和旋转时间为45秒。在95℃热盘上将线形酚醛清漆聚合物膜加热5分钟。在干燥后获得6微米厚的厚线形酚醛清漆聚合物膜。利用大约150mJ/cm2的曝光剂量在UV(350-450nm)照射下使用由50微米×50微米尺寸的光学暗区构成的光掩模曝光光刻胶。在由Clariant获得的AZA21K显影液中显影衬底45秒。图2示出聚合物区域的图案化排列。
利用作为膏料溶液的texanol制备含有粘合剂聚合物、银颗粒、玻璃粉、以及碳纳米管的碱可显影的厚膜膏料。在其上涂覆图案化光刻胶的衬底上丝网印刷出CNT膏料的覆盖层。ACA00的网屏被用于印刷。在80℃对流炉中将CNT膏料膜干燥20分钟。发现干燥的CNT的膏料膜的厚度为8微米。
用0.5%的NaCO3水溶液喷淋干燥的CNT膏料膜30秒,其间洗掉没有沉积线形酚醛清漆区域的CNT膏料膜。在线形酚醛清漆沉积的地方,在碱显影后保留CNT膏料膜的圆形区域。图3示出具有大约75微米×75微米尺寸的CNT膏料的圆形区域。因此观察到50%的线性尺寸增量。测量的CNT区的厚度为约8微米。图4解释了同最初的光刻胶区相比厚膜膏料区的尺寸增量。
在设定最大温度为525℃的9区域带状(belt)炉的最大温度范围内利用20分钟的保压时间烧结衬底。应用涂布有压敏粘合剂的胶带通过粘合剂激活的方法激活烧结的衬底。衬底作为电场发射二极管内的阴极,其中该二极管由沉积有CNT膏料区的阴极以及阳极组成,而该阳极由P13磷光体颗粒涂覆的ITO板构成。由两个1mm厚玻璃间隔器(glass spacer)分开阴极和阳极。然后二极管组件被放入到真空室内并且排空到低于1×E-6托的环境压力,其中二极管组件带有与高压脉冲电源连接的阴极和通过电位计与地面相连的阳极。在由100Hz的电压脉冲和历时20微秒组成的高压脉冲序列激发阴极时观察到高电流电场发射。测量到50毫安培的阳极场发射电流。图5示出了由利用本发明的粘合剂扩散转印图案化方法制成的CNT膏料区阵列的阳极电场发射照明。
Claims (10)
1、一种在衬底上沉积含有机溶剂的厚膜膏料的方法,包括:
a)在衬底上提供聚合物的图案化层,所述聚合物溶于所述溶剂;
)在所述图案化层上沉积厚膜膏料;
c)用所述溶剂溶解所述聚合物,以使所述聚合物扩散进入到厚膜膏料中;及
d)去除所述聚合物没有扩散在其中的厚膜膏料。
2、权利要求1的方法,进一步包含烧结利用厚膜膏料形成图案化的衬底的步骤。
3、权利要求1的方法,其中所述聚合物选自酚醛树脂、DNQ/线形酚醛清漆光刻胶、丙烯酸聚合物、带有侧挂叔丁基的聚合物、聚苯乙烯及乙基纤维素中的一种。
4.权利要求1的方法,其中所述聚合物的图案化层被印刷在衬底上。
5.权利要求1的方法,其中所述聚合物含有光刻胶。
6.权利要求1的方法,其中所述厚膜膏料含有一种或多种金属粉末、光活化单体和引发剂。
7.权利要求1的方法,其中所述厚膜膏料含有碳纳米管。
8.权利要求1的方法,其中溶解聚合物的步骤c)包括干燥所述厚膜膏料的步骤。
9.权利要求1的方法,其进一步包括制造电子设备的步骤,包括将沉积有厚膜膏料的衬底引进所述电子设备。
10.权利要求9的方法,其中所述的电子设备含有电场发射器。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US44177303P | 2003-01-22 | 2003-01-22 | |
US60/441,773 | 2003-01-22 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1742235A CN1742235A (zh) | 2006-03-01 |
CN100592207C true CN100592207C (zh) | 2010-02-24 |
Family
ID=32771973
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200480002598A Expired - Fee Related CN100592207C (zh) | 2003-01-22 | 2004-01-21 | 厚膜膏料层的粘合剂扩散转印图案 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7358037B2 (zh) |
EP (1) | EP1586112B1 (zh) |
JP (1) | JP4918352B2 (zh) |
KR (1) | KR101012586B1 (zh) |
CN (1) | CN100592207C (zh) |
DE (1) | DE602004003904T2 (zh) |
WO (1) | WO2004066364A2 (zh) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6885022B2 (en) * | 2000-12-08 | 2005-04-26 | Si Diamond Technology, Inc. | Low work function material |
KR100937085B1 (ko) * | 2002-10-26 | 2010-01-15 | 삼성전자주식회사 | 화학적 자기조립 방법을 이용한 탄소나노튜브 적층 및패턴 형성 방법 |
US20040170925A1 (en) * | 2002-12-06 | 2004-09-02 | Roach David Herbert | Positive imageable thick film compositions |
KR20050014430A (ko) * | 2003-07-31 | 2005-02-07 | 삼성에스디아이 주식회사 | 평판 표시소자의 전자 방출원 형성용 조성물 및 이로부터제조되는 전자 방출원 |
KR20050054141A (ko) * | 2003-12-04 | 2005-06-10 | 삼성에스디아이 주식회사 | 카본나노튜브 에미터의 형성방법 및 이를 이용한 전계방출표시소자의 제조방법 |
US7402373B2 (en) * | 2004-02-05 | 2008-07-22 | E.I. Du Pont De Nemours And Company | UV radiation blocking protective layers compatible with thick film pastes |
KR20060104657A (ko) | 2005-03-31 | 2006-10-09 | 삼성에스디아이 주식회사 | 전자 방출 소자 |
KR20060104652A (ko) * | 2005-03-31 | 2006-10-09 | 삼성에스디아이 주식회사 | 전자 방출 소자 |
US7608784B2 (en) * | 2006-07-13 | 2009-10-27 | E. I. Du Pont De Nemours And Company | Photosensitive conductive paste for electrode formation and electrode |
KR20100100984A (ko) | 2007-12-21 | 2010-09-15 | 이 아이 듀폰 디 네모아 앤드 캄파니 | 표면 특징부에서의 후막 페이스트의 패터닝 |
JP2009295745A (ja) * | 2008-06-04 | 2009-12-17 | Toshiba Corp | 半導体装置の製造方法 |
CN106908871B (zh) * | 2016-03-08 | 2019-02-26 | 宁波长阳科技股份有限公司 | 一种转印扩散膜的制备方法 |
CN106954347B (zh) * | 2017-04-21 | 2019-10-01 | 北京石油化工学院 | 光打印制备纳米银线电路板的方法 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4119480A (en) * | 1976-05-13 | 1978-10-10 | Tokyo Shibaura Electric Co., Ltd. | Method of manufacturing thick-film circuit devices |
JPS5541728A (en) * | 1978-09-18 | 1980-03-24 | Toshiba Corp | Pattern formation by thick film paste |
US5455145A (en) * | 1988-12-24 | 1995-10-03 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing double layer resist pattern and double layer resist structure |
US5192581A (en) * | 1989-08-10 | 1993-03-09 | Microelectronics And Computer Technology Corporation | Protective layer for preventing electroless deposition on a dielectric |
JP3340493B2 (ja) * | 1993-02-26 | 2002-11-05 | 沖電気工業株式会社 | パターン形成方法、位相シフト法用ホトマスクの形成方法 |
JPH07134422A (ja) * | 1993-09-14 | 1995-05-23 | Oki Electric Ind Co Ltd | パターン形成方法 |
US5624782A (en) * | 1994-04-14 | 1997-04-29 | E. I. Du Pont De Nemours And Company | Method of manufacturing thick-film resistor elements |
JPH08148787A (ja) | 1994-11-21 | 1996-06-07 | Sumitomo Kinzoku Ceramics:Kk | 厚膜ペースト |
US6258514B1 (en) * | 1999-03-10 | 2001-07-10 | Lsi Logic Corporation | Top surface imaging technique using a topcoat delivery system |
JP2001109165A (ja) * | 1999-10-05 | 2001-04-20 | Clariant (Japan) Kk | パターン形成方法 |
JP2001194785A (ja) * | 2000-01-11 | 2001-07-19 | Mitsubishi Electric Corp | レジストパターン微細化材料及びこの材料を用いた半導体装置の製造方法並びにこの製造方法を用いた半導体装置 |
US7449081B2 (en) | 2000-06-21 | 2008-11-11 | E. I. Du Pont De Nemours And Company | Process for improving the emission of electron field emitters |
JP2003140347A (ja) * | 2001-11-02 | 2003-05-14 | Tokyo Ohka Kogyo Co Ltd | 厚膜ホトレジスト層積層体、厚膜レジストパターンの製造方法、および接続端子の製造方法 |
JP4316222B2 (ja) * | 2001-11-27 | 2009-08-19 | 富士通株式会社 | レジストパターン厚肉化材料、レジストパターン及びその製造方法、並びに、半導体装置及びその製造方法 |
US7659046B2 (en) * | 2002-04-10 | 2010-02-09 | Eastman Kodak Company | Water-developable infrared-sensitive printing plate |
TWI227380B (en) * | 2002-06-06 | 2005-02-01 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
WO2005020295A2 (en) * | 2003-07-08 | 2005-03-03 | E.I. Dupont De Nemours And Company | Filling vias with thick film paste using contact printing |
US7384725B2 (en) * | 2004-04-02 | 2008-06-10 | Advanced Micro Devices, Inc. | System and method for fabricating contact holes |
-
2004
- 2004-01-21 JP JP2006501140A patent/JP4918352B2/ja not_active Expired - Fee Related
- 2004-01-21 EP EP04704145A patent/EP1586112B1/en not_active Expired - Lifetime
- 2004-01-21 WO PCT/US2004/003571 patent/WO2004066364A2/en active IP Right Grant
- 2004-01-21 DE DE602004003904T patent/DE602004003904T2/de not_active Expired - Lifetime
- 2004-01-21 KR KR1020057013442A patent/KR101012586B1/ko not_active IP Right Cessation
- 2004-01-21 CN CN200480002598A patent/CN100592207C/zh not_active Expired - Fee Related
- 2004-01-22 US US10/762,719 patent/US7358037B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE602004003904D1 (de) | 2007-02-08 |
KR20050102088A (ko) | 2005-10-25 |
CN1742235A (zh) | 2006-03-01 |
EP1586112A2 (en) | 2005-10-19 |
EP1586112B1 (en) | 2006-12-27 |
US20040173818A1 (en) | 2004-09-09 |
JP4918352B2 (ja) | 2012-04-18 |
KR101012586B1 (ko) | 2011-02-07 |
US7358037B2 (en) | 2008-04-15 |
WO2004066364A3 (en) | 2005-01-20 |
WO2004066364A2 (en) | 2004-08-05 |
JP2006520529A (ja) | 2006-09-07 |
DE602004003904T2 (de) | 2007-08-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US20080166666A1 (en) | Positive imageable thick film composition | |
CN100592207C (zh) | 厚膜膏料层的粘合剂扩散转印图案 | |
KR100655945B1 (ko) | 전계방출디스플레이패널용형광체패턴의제조방법,전계방출디스플레이패널용감광성소자,전계방출디스플레이패널용형광체패턴및전계방출디스플레이패널 | |
JP4503306B2 (ja) | フィールドエミッション型ディスプレイ装置用の電極形成組成物およびそのような組成物の使用方法 | |
JP2004055402A (ja) | 導電性ペースト組成物、電極形成用転写フィルムおよびプラズマディスプレイ用電極 | |
US20100252804A1 (en) | Cathode assembly containing an ultraviolet light-blocking dielectric layer | |
TW201013742A (en) | Co-processable photoimageable silver and carbon nanotube compositions and method for field emission devices | |
JP4943148B2 (ja) | 接触印刷を用いる厚膜ペーストでのビアの充填 | |
JP2003281935A (ja) | ポリビニルアセタールを用いた感光性導電ペースト、電極の形成方法及び電極 | |
US8298034B2 (en) | Patterning a thick film paste in surface features | |
JPH10198026A (ja) | 感光性樹脂組成物、これを用いた感光性エレメント及びこれらを用いた蛍光体パターンの製造法 | |
JPH11133596A (ja) | 光重合性組成物およびそれを用いたパターン形成方法および陰極線管の製造方法 | |
JPH10186645A (ja) | 蛍光体パターンの製造法 | |
JPH10186644A (ja) | 蛍光体パターンの製造法 | |
JPH11213876A (ja) | プラズマディスプレイの製造方法 | |
JPH1140052A (ja) | 電界放出型ディスプレイ用蛍光体パターンの製造法、電界放出型ディスプレイ用感光性エレメント、電界放出型ディスプレイ用蛍光体パターン及び電界放出型ディスプレイ | |
JPH03163727A (ja) | プラズマディスプレイパネル用電極の形成方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100224 Termination date: 20140121 |