CN1742235A - 厚膜膏料层的粘合剂扩散转印图案 - Google Patents
厚膜膏料层的粘合剂扩散转印图案 Download PDFInfo
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Abstract
本发明涉及一个用于制造电气和电子设备的工艺。在衬底上图案化聚合物膜。在图案化聚合物上沉积厚膜膏料。在使得聚合物扩散到厚膜膏料中的条件下干燥厚膜膏料。这样使得扩散区在碱显影液中不溶。
Description
发明技术领域
本发明涉及一种利用光刻胶和厚膜膏料(paste)的聚合物膜制造电气和电子设备的方法。该方法可提供高分辨率的厚膜膏料沉积物。本发明还涉及利用由图案化(patterned)聚合物或光刻胶制成的扩散层以图案化厚膜膏料制备的设备。
技术背景
Bouchard等人(WO01/99146)描述了用于改进场发射器的场发射器组合物和方法，但是没有提到与设备制造中所用其它部件或材料组合物的兼容性。
Fukuda等人(US5601638)描述了应用2-四癸醇溶剂的厚膜膏料，但是没有讨论带有光刻胶保护层与膏料和它的溶剂的兼容性。
发明概述
本发明描述一种用于制造电气或电子设备的方法，该设备包括沉积在图案化聚合物或光刻胶上的厚膜膏料。然后加热该结构以使聚合物膜或光刻胶扩散到厚膜膏料中。
本发明包括的方法包括：
a)在衬底上沉积图案化聚合物A膜；
b)在图案化聚合物A的膜上沉积厚膜膏料；
c)在图案化聚合物A扩散到膏料层中的过程中干燥厚膜膏料，由此将图案转印到膏料层上；及
d)通过曝光膏料层，然后放入对聚合物A有低溶解度的膏料显影液中，从聚合物A没有扩散到的区域中去除过剩的厚膜膏料。
本发明还包括方法，其包括：
a)在衬底上沉积正性光刻胶；
b)在光刻胶上遮蔽图案；
c)穿过图案化掩模的光曝光光刻胶；
d)显影该光刻胶；
e)在图案化光刻胶上面沉积厚膜膏料；
f)干燥厚膜膏料；
g)去除过剩的没有与光刻胶混合的厚膜膏料。
本发明还进一步公开了上述方法，其进一步包含对由厚膜膏料图案化的衬底进行烧结(firing)的额外步骤。
另外，本发明还描述了作为进一步包含活化厚膜膏料步骤的上述方法。
本发明还包含由上述第一或第二上述方法制造的电气或电子设备。
附图简述
图1示出在聚合物膜为光刻胶的地方粘合剂扩散转印成像的加工步骤。
图2示出在光刻胶显影后的光刻胶正方形(square)。
图3示出在碱液中膏料洗去后的碳纳米管膏料正方形。
图4示出与在扩散转印期间存在的光刻胶对比的膏料尺度增量。
图5示出通过碳纳米管膏料正方形的阵列形成的阳极的电场发射照明。
发明的详述
本发明涉及一个新颖的方法，该方法中在衬底上形成聚合物A膜的图案。选择聚合物A以在后来应用的厚膜膏料的溶剂中是可溶的。该溶剂是如酮、醇、酯、醚、及芳香烃、包括但不受限制的为texanol和β-萜品醇的有机溶剂。聚合物A可以是，但不受限制的为酚醛树脂、DNQ/线形酚醛清漆光刻胶(Novalac resists)、丙烯酸树脂、带有侧挂叔丁基官能团的聚合物、聚苯乙烯、以及乙基纤维素。
聚合物A膜的图案可以由包含但不受限制的油印(stencil printing)、喷墨印刷、光图形化(photopatterning)的各种方式形成。对于光图形化，聚合物A为光刻胶。该光刻胶可以为线形酚醛清漆型正性光刻胶或化学放大型正性光刻胶。
在聚合物A膜的沉积和图案化后，在聚合物A的图案上面沉积利用碱可溶粘合剂和有机溶剂配制的厚膜膏料。可以采用丝网印刷(screenprinting)技术使厚膜膏料沉积。在沉积后，在温度为50℃到100℃之间干燥所得的厚膜膏料膜15到60分钟。在该干燥期间，厚膜膏料溶剂包括引起图案化的聚合物A溶解，以及随后混合聚合物A扩散进入厚膜膏料沉积物中。在干燥步骤期间，聚合物A扩散进入厚膜膏料沉积物的范围能被如干燥温度和时间的参数控制。它还能通过选择厚膜膏料的溶剂以控制。由于聚合物A(例如线形酚醛清漆型光刻胶)在碱性膏料显影液中不溶，所以在干燥期间它扩散到厚膜膏料中将使得膏料的扩散区在碱显影液中不溶。随后的显影步骤，无论是碱喷淋或超声波处理，引起从不存在聚合物A的区域去除厚膜膏料沉积。在包含厚膜膏料沉积的电气和电子设备的制造中该新颖的方法是很有用的。
本发明的方法在获得厚膜膏料的细微特征图案中是很有用的，该厚膜膏料本身由丝网印刷或油印仅具有有限的图案化分辨率。各种厚膜膏料的光图形化常由膏料的固体组分限制，该膏料易于减少一些厚膜膏料的光学透明度。通过从厚膜膏料到第二聚合物层分离图案化方法，粘合剂扩散转印形成图案法提供获得厚膜膏料的细微特征图案的简单方法。
它尤其方便的是采用光刻胶聚合物用于细微特征图案构造。光刻胶可以包括聚合物、溶解抑制剂、单体、光引发剂、光产酸剂、和/或溶剂。厚膜膏料包含玻璃粉、无机粉末、金属粉末、粘合剂聚合物、光—活化单体、引发剂和/或溶剂。在显示器中用作电场发光器的特定厚膜膏料还包含碳纳米管。
如本领域熟练技术人员经常实践的一样，如DNQ/线形酚醛清漆和化学放大型光刻胶的普通的光刻胶可用于细微特征图形化中。常规就可获得1微米下的特征尺寸。在DNQ/线形酚醛清漆型光刻胶、DNQ作为一种溶解抑制剂通过在紫外线辐射下曝光而分解，使得在弱碱显影液中曝光区域溶解。在化学放大型光刻胶中，光刻胶配方中包含光产酸剂。在辐射下产生的酸能从光刻胶聚合物中去除叔丁基。随着叔丁基的去除，聚合物在碱或碱性显影液中变得可溶。光刻胶的未曝光区域在碱或碱性显影液中是高抗溶性的。此外，这些光刻胶在大多数有机溶剂如酮、醇、酯、醚、长链的乙酸酯和芳族化合物中是典型的高度溶解的。包括但不受限制的texanol和β-萜品醇的这些溶剂也常常可以用于配制许多厚膜膏料。对于利用碱溶的粘合剂聚合物配制的厚膜膏料，通过由碱显影液喷淋或在显影液中浸渍的同时通过超声波作用激发可以容易的洗掉干燥的膏料膜。用能溶解膏料粘合剂聚合物和聚合物A的溶液体系配制厚膜膏料。另外在显影溶剂中或聚合物A溶解性较差的溶液中膏料粘合剂聚合物为可溶的。膏料粘合剂聚合物可以是但不受限制的为带有羧基的丙烯酸聚合物，带有酸基团的丙烯酸聚合物、聚乙烯醇、聚乙烯醇和聚乙酸乙烯酯的共聚物、及聚羟基苯乙烯。本发明中公开的通过粘合剂扩散转印形成图案方法、通过将线形酚醛清漆型或化学放大型光刻胶和碱可溶厚膜膏料一起使用，可以获得厚膜膏料的细微特征图案。
本发明描述的方法中，得到的厚膜膏料沉积的特征尺寸与聚合物膜或光刻胶中图案的特征尺寸相关但是不相同。由于控制扩散方法的性质，同最初的聚合物或光刻胶图案元件相比，干燥的厚膜膏料沉积的膨胀通常为约30％到50％。然而该膨胀能通过控制如聚合物层的厚度、干燥温度、干燥时间、以及选择膏料溶剂的各种工艺参数来控制或限制。
图1图解了应用本发明方法的电子设备制造工艺。在衬底(1)顶部沉积光刻胶。光刻胶通常为DNQ/线形酚醛清漆型。可应用的其它类型光刻胶为如化学放大型光刻胶(IBM的APEX光刻胶)。外部的光掩模(2)被放在光刻胶顶部并与其紧密接触，然后放到UV照射下从光掩模的顶部将其曝光。在适度的碱性水溶液(例如1％的氢氧化钠)中显影(3)光刻胶。由于线形酚醛清漆或化学放大型光刻胶在正型中起作用，光刻胶的曝光区被溶解显露出衬底表面。基于有机溶剂且可显影的厚膜膏料(4)然后在其上涂覆光刻胶的衬底表面，并填充由光刻胶层的光显影产生的空穴的衬底上沉积。然后在50℃到100℃下将厚膜膏料沉积物干燥15到60分钟(5)，该期间在厚膜膏料中溶剂引发线形酚醛清漆光刻胶混合进入厚膜膏料，因此使得混合区在碱性显影液不溶。然后通过碱水溶液(如0.5％的碳酸钠)喷淋或超声波处理显影(6)厚膜膏料，以去除光刻胶与厚膜膏料没有混合的膏料。
在这工艺的阶段中该厚膜膏料设备可有用地作为烧成厚膜膏料制造过程的中间物。然后在大气下或惰性气体环境中在300℃到800℃下将干燥的和显影的图案化厚膜膏料和光刻胶的混合物烧结5到30分钟。然后在焙烧(firing)步骤中烧除包含混合的光刻胶的有机组成，留下烧结(sintered)的厚膜膏料。
Bouchard等人(WO01/99146)描述了用来作为场发射器的包含碳纳米管的厚膜膏料和作为明显有效改善场发射性能的方法。该改善方法包含层压带有聚合物膜的厚膜膏料沉积物，然后剥离层压膜。对于设计用于场发射器的厚膜膏料，该激活步骤也能实施。
实施例
以下的实施例解释了在电场发射设备的制造中使用粘合剂扩散转印方法图案化包含碳纳米管的厚膜膏料。
从Clariant Cooperation获得的线形酚醛清漆型光刻胶AZ4620被旋涂到被涂覆ITO的玻璃衬底上。所使用的旋转速度为3000rpm和旋转时间为45秒。在95℃热盘上将线形酚醛清漆聚合物膜加热5分钟。在干燥后获得6微米厚的厚线形酚醛清漆聚合物膜。利用大约150mJ/cm2的曝光剂量在UV(350-450nm)照射下使用由50微米×50微米尺寸的光学暗区构成的光掩模曝光光刻胶。在由Clariant获得的AZA21K显影液中显影衬底45秒。图2示出聚合物区域的图案化排列。
利用作为膏料溶液的texanol制备含有粘合剂聚合物、银颗粒、玻璃粉、以及碳纳米管的碱可显影的厚膜膏料。在其上涂覆图案化光刻胶的衬底上丝网印刷出CNT膏料的覆盖层。AC400的网屏被用于印刷。在80℃对流炉中将CNT膏料膜干燥20分钟。发现干燥的CNT的膏料膜的厚度为8微米。
用0.5％的NaCO3水溶液喷淋干燥的CNT膏料膜30秒，其间洗掉没有沉积线形酚醛清漆区域的CNT膏料膜。在线形酚醛清漆沉积的地方，在碱显影后保留CNT膏料膜的圆形区域。图3示出具有大约75微米×75微米尺寸的CNT膏料的圆形区域。因此观察到50％的线性尺寸增量。测量的CNT区的厚度为约8微米。图4解释了同最初的光刻胶区相比厚膜膏料区的尺寸增量。
在设定最大温度为525℃的9区域带状(belt)炉的最大温度范围内利用20分钟的保压时间烧结衬底。应用涂布有压敏粘合剂的胶带通过粘合剂激活的方法激活烧结的衬底。衬底作为电场发射二极管内的阴极，其中该二极管由沉积有CNT膏料区的阴极以及阳极组成，而该阳极由P13磷光体颗粒涂覆的ITO板构成。由两个1mm厚玻璃间隔器(glass spacer)分开阴极和阳极。然后二极管组件被放入到真空室内并且排空到低于1×E-6托的环境压力，其中二极管组件带有与高压脉冲电源连接的阴极和通过电位计与地面相连的阳极。在由100Hz的电压脉冲和历时20微秒组成的高压脉冲序列激发阴极时观察到高电流电场发射。测量到50毫安培的阳极场发射电流。图5示出了由利用本发明的粘合剂扩散转印图案化方法制成的CNT膏料区阵列的阳极电场发射照明。
Claims (6)
1、一种方法，包括：
a)在衬底上沉积聚合物A的图案化膜；
b)在聚合物A的图案化膜上沉积厚膜膏料；
c)在图案化聚合物A扩散进入到膏料层中的过程中干燥厚膜膏料，由此将图案转印到膏料层上；及
d)通过曝光膏料层，然后将其放入对聚合物A有低溶解度的膏料显影液中，从聚合物A没有扩散到的区域中去除过剩的厚膜膏料。
2、一种方法，包括：
a)在衬底上沉积正性光刻胶；
b)在光刻胶上遮蔽图案；
c)穿过图案化掩模在光下曝光光刻胶；
d)显影光刻胶；
e)在图案化光刻胶上沉积厚膜膏料；
f)干燥厚膜膏料；
g)去除过剩的没有与光刻胶混合的厚膜膏料。
3、权利要求1或权利要求2的方法，进一步包含烧结利用厚膜膏料形成图案化的衬底的步骤。
4、权利要求3的方法，还包含活化厚膜膏料的步骤。
5、由权利要求1或权利要求2的方法制造的电子设备。
6、权利要求1的方法，其中聚合物A选自酚醛树脂、DNQ/线形酚醛清漆光刻胶、丙烯酸聚合物、带有侧挂叔丁基的聚合物、聚苯乙烯、及乙基纤维素。
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106908871A (zh) * | 2016-03-08 | 2017-06-30 | 宁波长阳科技股份有限公司 | 一种转印扩散膜的制备方法 |
| CN106954347A (zh) * | 2017-04-21 | 2017-07-14 | 北京石油化工学院 | 光打印制备纳米银线电路板的方法 |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6885022B2 (en) * | 2000-12-08 | 2005-04-26 | Si Diamond Technology, Inc. | Low work function material |
| KR100937085B1 (ko) * | 2002-10-26 | 2010-01-15 | 삼성전자주식회사 | 화학적 자기조립 방법을 이용한 탄소나노튜브 적층 및패턴 형성 방법 |
| US20040170925A1 (en) * | 2002-12-06 | 2004-09-02 | Roach David Herbert | Positive imageable thick film compositions |
| KR20050014430A (ko) * | 2003-07-31 | 2005-02-07 | 삼성에스디아이 주식회사 | 평판 표시소자의 전자 방출원 형성용 조성물 및 이로부터제조되는 전자 방출원 |
| KR20050054141A (ko) * | 2003-12-04 | 2005-06-10 | 삼성에스디아이 주식회사 | 카본나노튜브 에미터의 형성방법 및 이를 이용한 전계방출표시소자의 제조방법 |
| US7402373B2 (en) * | 2004-02-05 | 2008-07-22 | E.I. Du Pont De Nemours And Company | UV radiation blocking protective layers compatible with thick film pastes |
| KR20060104657A (ko) | 2005-03-31 | 2006-10-09 | 삼성에스디아이 주식회사 | 전자 방출 소자 |
| KR20060104652A (ko) * | 2005-03-31 | 2006-10-09 | 삼성에스디아이 주식회사 | 전자 방출 소자 |
| US7608784B2 (en) * | 2006-07-13 | 2009-10-27 | E. I. Du Pont De Nemours And Company | Photosensitive conductive paste for electrode formation and electrode |
| EP2223324A1 (en) | 2007-12-21 | 2010-09-01 | E. I. du Pont de Nemours and Company | Patterning a thick film paste in surface features |
| JP2009295745A (ja) * | 2008-06-04 | 2009-12-17 | Toshiba Corp | 半導体装置の製造方法 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4119480A (en) * | 1976-05-13 | 1978-10-10 | Tokyo Shibaura Electric Co., Ltd. | Method of manufacturing thick-film circuit devices |
| JPS5541728A (en) * | 1978-09-18 | 1980-03-24 | Toshiba Corp | Pattern formation by thick film paste |
| US5455145A (en) * | 1988-12-24 | 1995-10-03 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing double layer resist pattern and double layer resist structure |
| US5192581A (en) * | 1989-08-10 | 1993-03-09 | Microelectronics And Computer Technology Corporation | Protective layer for preventing electroless deposition on a dielectric |
| JP3340493B2 (ja) * | 1993-02-26 | 2002-11-05 | 沖電気工業株式会社 | パターン形成方法、位相シフト法用ホトマスクの形成方法 |
| JPH07134422A (ja) * | 1993-09-14 | 1995-05-23 | Oki Electric Ind Co Ltd | パターン形成方法 |
| US5624782A (en) * | 1994-04-14 | 1997-04-29 | E. I. Du Pont De Nemours And Company | Method of manufacturing thick-film resistor elements |
| JPH08148787A (ja) * | 1994-11-21 | 1996-06-07 | Sumitomo Kinzoku Ceramics:Kk | 厚膜ペースト |
| US6258514B1 (en) * | 1999-03-10 | 2001-07-10 | Lsi Logic Corporation | Top surface imaging technique using a topcoat delivery system |
| JP2001109165A (ja) * | 1999-10-05 | 2001-04-20 | Clariant (Japan) Kk | パターン形成方法 |
| JP2001194785A (ja) * | 2000-01-11 | 2001-07-19 | Mitsubishi Electric Corp | レジストパターン微細化材料及びこの材料を用いた半導体装置の製造方法並びにこの製造方法を用いた半導体装置 |
| US7449081B2 (en) | 2000-06-21 | 2008-11-11 | E. I. Du Pont De Nemours And Company | Process for improving the emission of electron field emitters |
| JP2003140347A (ja) * | 2001-11-02 | 2003-05-14 | Tokyo Ohka Kogyo Co Ltd | 厚膜ホトレジスト層積層体、厚膜レジストパターンの製造方法、および接続端子の製造方法 |
| JP4316222B2 (ja) * | 2001-11-27 | 2009-08-19 | 富士通株式会社 | レジストパターン厚肉化材料、レジストパターン及びその製造方法、並びに、半導体装置及びその製造方法 |
| US7659046B2 (en) * | 2002-04-10 | 2010-02-09 | Eastman Kodak Company | Water-developable infrared-sensitive printing plate |
| TWI227380B (en) * | 2002-06-06 | 2005-02-01 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| CN100585772C (zh) * | 2003-07-08 | 2010-01-27 | 纳幕尔杜邦公司 | 采用接触印刷用厚膜膏填塞孔或槽的方法 |
| US7384725B2 (en) * | 2004-04-02 | 2008-06-10 | Advanced Micro Devices, Inc. | System and method for fabricating contact holes |
-
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106908871A (zh) * | 2016-03-08 | 2017-06-30 | 宁波长阳科技股份有限公司 | 一种转印扩散膜的制备方法 |
| CN106908871B (zh) * | 2016-03-08 | 2019-02-26 | 宁波长阳科技股份有限公司 | 一种转印扩散膜的制备方法 |
| CN106954347A (zh) * | 2017-04-21 | 2017-07-14 | 北京石油化工学院 | 光打印制备纳米银线电路板的方法 |
| CN106954347B (zh) * | 2017-04-21 | 2019-10-01 | 北京石油化工学院 | 光打印制备纳米银线电路板的方法 |
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| DE602004003904D1 (de) | 2007-02-08 |
| JP4918352B2 (ja) | 2012-04-18 |
| EP1586112A2 (en) | 2005-10-19 |
| WO2004066364A3 (en) | 2005-01-20 |
| US7358037B2 (en) | 2008-04-15 |
| WO2004066364A2 (en) | 2004-08-05 |
| KR101012586B1 (ko) | 2011-02-07 |
| KR20050102088A (ko) | 2005-10-25 |
| EP1586112B1 (en) | 2006-12-27 |
| CN100592207C (zh) | 2010-02-24 |
| JP2006520529A (ja) | 2006-09-07 |
| DE602004003904T2 (de) | 2007-08-30 |
| US20040173818A1 (en) | 2004-09-09 |
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