KR20050039731A - 중합체 계면을 갖는 유기 박막 트랜지스터 - Google Patents

중합체 계면을 갖는 유기 박막 트랜지스터 Download PDF

Info

Publication number
KR20050039731A
KR20050039731A KR1020047006756A KR20047006756A KR20050039731A KR 20050039731 A KR20050039731 A KR 20050039731A KR 1020047006756 A KR1020047006756 A KR 1020047006756A KR 20047006756 A KR20047006756 A KR 20047006756A KR 20050039731 A KR20050039731 A KR 20050039731A
Authority
KR
South Korea
Prior art keywords
polymer
transistor
polymer layer
organic semiconductor
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020047006756A
Other languages
English (en)
Korean (ko)
Inventor
토미더블유. 켈레이
래리디. 보드맨
티모시디. 던바
토드디. 존스
던브이. 머이레스
마크제이. 펠레라이트
테란스피. 스미스
Original Assignee
쓰리엠 이노베이티브 프로퍼티즈 컴파니
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 쓰리엠 이노베이티브 프로퍼티즈 컴파니 filed Critical 쓰리엠 이노베이티브 프로퍼티즈 컴파니
Publication of KR20050039731A publication Critical patent/KR20050039731A/ko
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/474—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a multilayered structure
    • H10K10/476—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a multilayered structure comprising at least one organic layer and at least one inorganic layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/311—Phthalocyanine
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Thin Film Transistor (AREA)
KR1020047006756A 2001-11-05 2002-10-23 중합체 계면을 갖는 유기 박막 트랜지스터 Ceased KR20050039731A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/012,654 2001-11-05
US10/012,654 US6946676B2 (en) 2001-11-05 2001-11-05 Organic thin film transistor with polymeric interface

Publications (1)

Publication Number Publication Date
KR20050039731A true KR20050039731A (ko) 2005-04-29

Family

ID=21756035

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020047006756A Ceased KR20050039731A (ko) 2001-11-05 2002-10-23 중합체 계면을 갖는 유기 박막 트랜지스터

Country Status (6)

Country Link
US (3) US6946676B2 (https=)
EP (1) EP1442484A2 (https=)
JP (1) JP2005509298A (https=)
KR (1) KR20050039731A (https=)
AU (1) AU2002337959A1 (https=)
WO (1) WO2003041185A2 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7851788B2 (en) 2006-02-28 2010-12-14 Pioneer Corporation Organic transistor and manufacturing method thereof

Families Citing this family (95)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB0024294D0 (en) * 2000-10-04 2000-11-15 Univ Cambridge Tech Solid state embossing of polymer devices
US6998068B2 (en) 2003-08-15 2006-02-14 3M Innovative Properties Company Acene-thiophene semiconductors
US6946676B2 (en) * 2001-11-05 2005-09-20 3M Innovative Properties Company Organic thin film transistor with polymeric interface
WO2003052841A1 (en) * 2001-12-19 2003-06-26 Avecia Limited Organic field effect transistor with an organic dielectric
JP4136482B2 (ja) * 2002-06-20 2008-08-20 キヤノン株式会社 有機半導体素子、その製造方法および有機半導体装置
DE10228772A1 (de) * 2002-06-27 2004-01-15 Infineon Technologies Ag Verringerung des Kontaktwiderstandes in organischen Feldeffekttransistoren mit Palladiumkontakten durch Verwendung von Nitrilen und Isonitrilen
JP4635410B2 (ja) * 2002-07-02 2011-02-23 ソニー株式会社 半導体装置及びその製造方法
US6784017B2 (en) * 2002-08-12 2004-08-31 Precision Dynamics Corporation Method of creating a high performance organic semiconductor device
US7088145B2 (en) * 2002-12-23 2006-08-08 3M Innovative Properties Company AC powered logic circuitry
US7061570B2 (en) * 2003-03-26 2006-06-13 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
US7098525B2 (en) * 2003-05-08 2006-08-29 3M Innovative Properties Company Organic polymers, electronic devices, and methods
US7279777B2 (en) * 2003-05-08 2007-10-09 3M Innovative Properties Company Organic polymers, laminates, and capacitors
JP4470398B2 (ja) * 2003-06-23 2010-06-02 Ｔｄｋ株式会社 電界効果トランジスタ
KR100995451B1 (ko) * 2003-07-03 2010-11-18 삼성전자주식회사 다층 구조의 게이트 절연막을 포함하는 유기 박막 트랜지스터
JP4228204B2 (ja) * 2003-07-07 2009-02-25 セイコーエプソン株式会社 有機トランジスタの製造方法
US7109519B2 (en) * 2003-07-15 2006-09-19 3M Innovative Properties Company Bis(2-acenyl)acetylene semiconductors
US20070178710A1 (en) * 2003-08-18 2007-08-02 3M Innovative Properties Company Method for sealing thin film transistors
WO2005020342A1 (ja) * 2003-08-22 2005-03-03 Matsushita Electric Industrial Co., Ltd. 縦型有機ｆｅｔ及びその製造方法
JP2005072528A (ja) * 2003-08-28 2005-03-17 Shin Etsu Chem Co Ltd 薄層電界効果トランジスター及びその製造方法
WO2005031813A2 (en) * 2003-09-24 2005-04-07 E.I. Dupont De Nemours And Company Method for forming pentacene film
JP2005136383A (ja) * 2003-10-09 2005-05-26 Canon Inc 有機半導体素子、その製造方法および有機半導体装置
US8450723B2 (en) 2003-11-04 2013-05-28 Alcatel Lucent Apparatus having an aromatic dielectric and an aromatic organic semiconductor including an alkyl chain
US7767998B2 (en) * 2003-12-04 2010-08-03 Alcatel-Lucent Usa Inc. OFETs with active channels formed of densified layers
US20050130422A1 (en) * 2003-12-12 2005-06-16 3M Innovative Properties Company Method for patterning films
US7078937B2 (en) 2003-12-17 2006-07-18 3M Innovative Properties Company Logic circuitry powered by partially rectified ac waveform
JP4661065B2 (ja) * 2004-03-22 2011-03-30 セイコーエプソン株式会社 相補型有機半導体装置
NO321555B1 (no) * 2004-03-26 2006-05-29 Thin Film Electronics Asa Organisk elektronisk innretning og fremgangsmate til fremstilling av en slik innretning
KR100615216B1 (ko) * 2004-04-29 2006-08-25 삼성에스디아이 주식회사 유기 억셉터막을 구비한 유기 박막 트랜지스터
DE102004025423B4 (de) * 2004-05-24 2008-03-06 Qimonda Ag Dünnfilm-Feldeffekt-Transistor mit Gate-Dielektrikum aus organischem Material und Verfahren zu dessen Herstellung
KR101039024B1 (ko) 2004-06-14 2011-06-03 삼성전자주식회사 유기 반도체를 이용한 박막 트랜지스터 표시판 및 그 제조방법
JP2006005041A (ja) * 2004-06-16 2006-01-05 Toshiba Corp 有機半導体素子とその製造方法
US7399668B2 (en) * 2004-09-30 2008-07-15 3M Innovative Properties Company Method for making electronic devices having a dielectric layer surface treatment
US20060105199A1 (en) * 2004-11-18 2006-05-18 3M Innovative Properties Company Electroluminescent devices containing trans-1,2-bis(acenyl)ethylene compounds
US7315042B2 (en) * 2004-11-18 2008-01-01 3M Innovative Properties Company Semiconductors containing trans-1,2-bis(acenyl)ethylene compounds
US20060128165A1 (en) * 2004-12-13 2006-06-15 3M Innovative Properties Company Method for patterning surface modification
US20060142520A1 (en) * 2004-12-27 2006-06-29 3M Innovative Properties Company Hole transport layers for organic electroluminescent devices
KR100637204B1 (ko) * 2005-01-15 2006-10-23 삼성에스디아이 주식회사 박막 트랜지스터, 그 제조 방법 및 이를 구비한 평판 표시장치
US7151276B2 (en) * 2005-03-09 2006-12-19 3M Innovative Properties Company Semiconductors containing perfluoroether acyl oligothiophene compounds
US7211679B2 (en) * 2005-03-09 2007-05-01 3M Innovative Properties Company Perfluoroether acyl oligothiophene compounds
US7282735B2 (en) * 2005-03-31 2007-10-16 Xerox Corporation TFT having a fluorocarbon-containing layer
US20060231908A1 (en) * 2005-04-13 2006-10-19 Xerox Corporation Multilayer gate dielectric
US20060231829A1 (en) * 2005-04-13 2006-10-19 Xerox Corporation TFT gate dielectric with crosslinked polymer
TW200703664A (en) * 2005-05-31 2007-01-16 Nat University Iwate Univ Inc Organic thin film transistor
GB0511132D0 (en) * 2005-06-01 2005-07-06 Plastic Logic Ltd Layer-selective laser ablation patterning
US20070075308A1 (en) 2005-09-30 2007-04-05 Florian Dotz Active semiconductor devices
KR100719566B1 (ko) * 2005-10-22 2007-05-17 삼성에스디아이 주식회사 유기 박막 트랜지스터, 및 이를 구비한 평판 표시 장치
KR101213871B1 (ko) * 2005-12-15 2012-12-18 엘지디스플레이 주식회사 박막 트랜지스터 어레이 기판 및 그 제조 방법
US8134144B2 (en) * 2005-12-23 2012-03-13 Xerox Corporation Thin-film transistor
GB0601008D0 (en) * 2006-01-18 2006-03-01 Qinetiq Ltd Method of fabricating a semicondutor device
US8138075B1 (en) 2006-02-06 2012-03-20 Eberlein Dietmar C Systems and methods for the manufacture of flat panel devices
US20070193026A1 (en) * 2006-02-23 2007-08-23 Chun Christine Dong Electron attachment assisted formation of electrical conductors
JP5062435B2 (ja) * 2006-02-27 2012-10-31 株式会社村田製作所 電界効果トランジスタ
JP4887848B2 (ja) * 2006-03-15 2012-02-29 セイコーエプソン株式会社 回路基板、電気光学装置および電子機器
JP2007251093A (ja) * 2006-03-20 2007-09-27 Nippon Zeon Co Ltd ゲート絶縁膜、有機薄膜トランジスタ、該トランジスタの製造方法及び表示装置
US7667230B2 (en) * 2006-03-31 2010-02-23 3M Innovative Properties Company Electronic devices containing acene-thiophene copolymers
US7608679B2 (en) * 2006-03-31 2009-10-27 3M Innovative Properties Company Acene-thiophene copolymers
US7372071B2 (en) * 2006-04-06 2008-05-13 Xerox Corporation Functionalized heteroacenes and electronic devices generated therefrom
US7557370B2 (en) * 2006-04-06 2009-07-07 Xerox Corporation Heteroacene polymers and electronic devices generated therefrom
US7495251B2 (en) * 2006-04-21 2009-02-24 3M Innovative Properties Company Electronic devices containing acene-thiophene copolymers with silylethynyl groups
US7666968B2 (en) * 2006-04-21 2010-02-23 3M Innovative Properties Company Acene-thiophene copolymers with silethynly groups
US7919825B2 (en) * 2006-06-02 2011-04-05 Air Products And Chemicals, Inc. Thin film transistors with poly(arylene ether) polymers as gate dielectrics and passivation layers
US20080012074A1 (en) * 2006-07-14 2008-01-17 Air Products And Chemicals, Inc. Low Temperature Sol-Gel Silicates As Dielectrics or Planarization Layers For Thin Film Transistors
DE102006033887B4 (de) * 2006-07-21 2015-04-09 Leonhard Kurz Gmbh & Co. Kg Verfahren zur Herstellung eines Mehrschichtkörpers mit leitfähiger Polymerschicht
US8388790B2 (en) * 2006-07-21 2013-03-05 Leonhard Kurz Stiftung & Co. Kg Multilayered body comprising an electroconductive polymer layer and method for the production thereof
US20080224127A1 (en) * 2006-08-22 2008-09-18 Marks Tobin J Gate dielectric structures, organic semiconductors, thin film transistors and related methods
KR100737383B1 (ko) * 2006-09-11 2007-07-09 한국전자통신연구원 절연막, 이를 이용한 유기박막 트랜지스터 및 제조방법
KR20080040119A (ko) * 2006-11-02 2008-05-08 삼성전자주식회사 디클로로포스포릴기를 함유하는 자기조립단분자막 형성화합물을 이용한 유기박막 트랜지스터의 제조방법
TW200830595A (en) * 2006-11-27 2008-07-16 Nat University Iwate Univ Inc Organic thin film transistor, organic composite electronic element, method for manufacturing such transistor and element, and display device and memory
EP1936712A1 (en) * 2006-12-23 2008-06-25 ETH Zürich Organic field-effect transistors with polymeric gate dielectric and method for making same
JP5234533B2 (ja) * 2007-03-26 2013-07-10 国立大学法人九州大学 有機半導体素子およびその製造方法
JP2008244362A (ja) * 2007-03-28 2008-10-09 Seiko Epson Corp 半導体装置の製造方法、半導体装置、半導体回路、電気光学装置および電子機器
JP5320746B2 (ja) * 2007-03-28 2013-10-23 凸版印刷株式会社 薄膜トランジスタ
EP2183781B1 (en) * 2007-06-28 2012-10-24 3M Innovative Properties Company Method for forming gate structures
JP5217317B2 (ja) * 2007-09-12 2013-06-19 ソニー株式会社 有機トランジスタに用いる有機絶縁膜、および有機トランジスタとその製造方法
WO2009079150A1 (en) * 2007-12-17 2009-06-25 3M Innovative Properties Company Solution processable organic semiconductors based on anthracene
JP5288826B2 (ja) * 2008-02-22 2013-09-11 三洋電機株式会社 有機半導体素子及びその製造方法
PT103999B (pt) * 2008-03-20 2012-11-16 Univ Nova De Lisboa Processo de utilização e criação de papel à base de fibras celulósicas naturais, fibras sintéticas ou mistas como suporte físico e meio armazenador de cargas elétricas em transístores de efeito de campo com memória autossustentáveis usando óxidos sem
WO2009148722A2 (en) * 2008-06-02 2009-12-10 3M Innovative Properties Company Adhesive encapsulating composition and electronic devices made therewith
JP5270755B2 (ja) * 2008-06-02 2013-08-21 スリーエム イノベイティブ プロパティズ カンパニー 接着剤封入組成物及びそれで作られた電子デバイス
JP2011524908A (ja) * 2008-06-19 2011-09-08 スリーエム イノベイティブ プロパティズ カンパニー 溶液処理可能な有機半導体
KR101004734B1 (ko) * 2008-07-29 2011-01-04 한국전자통신연구원 표면 에너지 제어를 이용한 유기 박막 트랜지스터 제조방법
US7863694B2 (en) * 2008-10-14 2011-01-04 Xerox Corporation Organic thin film transistors
US20100159635A1 (en) * 2008-12-24 2010-06-24 Weyerhaeuser Company Method of patterning conductive layer and devices made thereby
JP5630036B2 (ja) * 2009-05-07 2014-11-26 セイコーエプソン株式会社 有機トランジスター、有機トランジスターの製造方法、電気光学装置および電子機器
CN105440540A (zh) * 2010-09-02 2016-03-30 默克专利股份有限公司 用于电子器件的夹层
US8692238B2 (en) 2012-04-25 2014-04-08 Eastman Kodak Company Semiconductor devices and methods of preparation
US9082983B1 (en) * 2012-05-16 2015-07-14 The United States Of America As Represented By The Secretary Of The Navy Solution processable thin-film transistors
US8779415B2 (en) 2012-11-08 2014-07-15 Eastman Kodak Company Devices containing organic polymeric multi-metallic composites
US9721697B2 (en) 2012-11-08 2017-08-01 Eastman Kodak Company Organic polymeric bi-metallic composites
JP6306522B2 (ja) * 2013-02-08 2018-04-04 株式会社クラレ 多層構造体およびその製造方法
US20150373858A1 (en) * 2013-02-08 2015-12-24 Kuraray Co., Ltd. Electronic device
US9786409B2 (en) 2013-06-27 2017-10-10 Basf Se Metathesis polymers as dielectrics
CN106688050B (zh) 2014-06-11 2018-09-18 伊斯曼柯达公司 具有带含硫代硫酸盐聚合物的电介质层的器件
KR102450399B1 (ko) * 2015-10-06 2022-09-30 삼성전자주식회사 박막 트랜지스터, 그 제조 방법, 그리고 상기 박막 트랜지스터를 포함하는 전자 장치
US11857997B2 (en) * 2020-06-18 2024-01-02 International Business Machines Corporation Metal surface protection

Family Cites Families (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4561726A (en) * 1983-07-29 1985-12-31 At&T Bell Laboratories Alignment of ferroelectric LCDs
US4539061A (en) 1983-09-07 1985-09-03 Yeda Research And Development Co., Ltd. Process for the production of built-up films by the stepwise adsorption of individual monolayers
US5079179A (en) 1987-10-09 1992-01-07 Hughes Aircraft Company Process of making GaAs electrical circuit devices with Langmuir-Blodgett insulator layer
EP0390571B1 (en) * 1989-03-31 1994-08-03 Kabushiki Kaisha Toshiba Organic thin film display element
JP2813428B2 (ja) * 1989-08-17 1998-10-22 三菱電機株式会社 電界効果トランジスタ及び該電界効果トランジスタを用いた液晶表示装置
US5207862A (en) 1989-09-08 1993-05-04 Bell Communications Research, Inc. Technique for epitaxial growth of oriented thin films of polydiacetylenes
FR2664430B1 (fr) 1990-07-04 1992-09-18 Centre Nat Rech Scient Transistor a effet de champ en couche mince de structure mis, dont l'isolant et le semiconducteur sont realises en materiaux organiques.
JPH05148418A (ja) * 1991-04-09 1993-06-15 Mitsui Toatsu Chem Inc 加水分解性が促進されたナイロン組成物およびナイロンの加水分解性を促進する方法
JPH05105763A (ja) * 1991-09-30 1993-04-27 Kanegafuchi Chem Ind Co Ltd ケイ素系ハイブリツド材料
JPH06336531A (ja) * 1993-05-27 1994-12-06 Nippon Pariren Kk アイオノマー樹脂上へのポリパラキシリレン被膜の造膜方法
US5556706A (en) 1993-10-06 1996-09-17 Matsushita Electric Industrial Co., Ltd. Conductive layered product and method of manufacturing the same
US6278127B1 (en) * 1994-12-09 2001-08-21 Agere Systems Guardian Corp. Article comprising an organic thin film transistor adapted for biasing to form a N-type or a P-type transistor
US5543200A (en) * 1994-12-19 1996-08-06 Gencorp Inc. Abrasion-resistant article coated with a coating compositions based on fluorinated monohydric alcohol
JP3994441B2 (ja) * 1995-01-09 2007-10-17 松下電器産業株式会社 電界効果トランジスタ
EP1007349B1 (en) 1995-11-22 2004-09-29 THE GOVERNMENT OF THE UNITED STATES OF AMERICA, as represented by THE SECRETARY OF THE NAVY Patterned conducting polymer surfaces and process for preparing the same and devices containing the same
US5625199A (en) * 1996-01-16 1997-04-29 Lucent Technologies Inc. Article comprising complementary circuit with inorganic n-channel and organic p-channel thin film transistors
US6326640B1 (en) 1996-01-29 2001-12-04 Motorola, Inc. Organic thin film transistor with enhanced carrier mobility
WO1997049778A1 (fr) * 1996-06-27 1997-12-31 Nippon Oil Company, Ltd. Materiau absorbant les ultraviolets et plaques d'absorption des ultraviolets
US5965679A (en) 1996-09-10 1999-10-12 The Dow Chemical Company Polyphenylene oligomers and polymers
JP3999837B2 (ja) 1997-02-10 2007-10-31 Ｔｄｋ株式会社 有機エレクトロルミネッセンス表示装置
DE19815220C2 (de) 1998-03-27 2003-12-18 Univ Dresden Tech Verfahren zur haftfesten und dichten chemischen oder galvanischen Metallisierung von Substraten sowie Haftvermittler zur Durchführung des Verfahrens
AU3552699A (en) 1998-04-10 1999-11-01 E-Ink Corporation Electronic displays using organic-based field effect transistors
TW410478B (en) * 1998-05-29 2000-11-01 Lucent Technologies Inc Thin-film transistor monolithically integrated with an organic light-emitting diode
US6313185B1 (en) * 1998-09-24 2001-11-06 Honeywell International Inc. Polymers having backbones with reactive groups employed in crosslinking as precursors to nanoporous thin film structures
US6114088A (en) * 1999-01-15 2000-09-05 3M Innovative Properties Company Thermal transfer element for forming multilayer devices
JP2000250045A (ja) * 1999-02-26 2000-09-14 Sharp Corp 液晶表示装置およびその製造方法
US6207472B1 (en) * 1999-03-09 2001-03-27 International Business Machines Corporation Low temperature thin film transistor fabrication
US6265243B1 (en) 1999-03-29 2001-07-24 Lucent Technologies Inc. Process for fabricating organic circuits
US6252245B1 (en) 1999-03-29 2001-06-26 Howard Edan Katz Device comprising n-channel semiconductor material
WO2000079617A1 (en) * 1999-06-21 2000-12-28 Cambridge University Technical Services Limited Aligned polymers for an organic tft
NO312867B1 (no) 1999-06-30 2002-07-08 Penn State Res Found Anordning til elektrisk kontaktering eller isolering av organiske eller uorganiske halvledere, samt fremgangsmåte til densfremstilling
WO2001008242A1 (en) 1999-07-21 2001-02-01 E Ink Corporation Preferred methods for producing electrical circuit elements used to control an electronic display
US6335539B1 (en) * 1999-11-05 2002-01-01 International Business Machines Corporation Method for improving performance of organic semiconductors in bottom electrode structure
HK1054816B (zh) * 1999-12-21 2006-09-29 弗莱克因艾伯勒有限公司 溶液加工
AU781584B2 (en) * 1999-12-21 2005-06-02 Flexenable Limited Solution processed devices
US6638680B2 (en) * 2000-06-26 2003-10-28 Agfa-Gevaert Material and method for making an electroconductive pattern
US6867539B1 (en) 2000-07-12 2005-03-15 3M Innovative Properties Company Encapsulated organic electronic devices and method for making same
US7031959B2 (en) 2000-11-17 2006-04-18 United States Postal Service Address matching
US7439096B2 (en) 2001-02-21 2008-10-21 Lucent Technologies Inc. Semiconductor device encapsulation
US6870180B2 (en) * 2001-06-08 2005-03-22 Lucent Technologies Inc. Organic polarizable gate transistor apparatus and method
US6734038B2 (en) * 2001-09-04 2004-05-11 The Trustees Of Princeton University Method of manufacturing high-mobility organic thin films using organic vapor phase deposition
US6433359B1 (en) * 2001-09-06 2002-08-13 3M Innovative Properties Company Surface modifying layers for organic thin film transistors
US6864396B2 (en) * 2001-09-27 2005-03-08 3M Innovative Properties Company Substituted pentacene semiconductors
US20030097010A1 (en) * 2001-09-27 2003-05-22 Vogel Dennis E. Process for preparing pentacene derivatives
US6617609B2 (en) * 2001-11-05 2003-09-09 3M Innovative Properties Company Organic thin film transistor with siloxane polymer interface
US6946676B2 (en) 2001-11-05 2005-09-20 3M Innovative Properties Company Organic thin film transistor with polymeric interface
US6768132B2 (en) * 2002-03-07 2004-07-27 3M Innovative Properties Company Surface modified organic thin film transistors
US7109519B2 (en) * 2003-07-15 2006-09-19 3M Innovative Properties Company Bis(2-acenyl)acetylene semiconductors
US7045470B2 (en) * 2003-11-04 2006-05-16 Lucent Technologies Inc. Methods of making thin dielectric layers on substrates
US7267892B2 (en) * 2004-02-25 2007-09-11 Eastman Kodak Company Electroluminescent devices having pendant naphthylanthracene-based polymers
US7217600B2 (en) * 2004-10-29 2007-05-15 Intel Corporation Cyclic olefin polymers and catalyst for semiconductor applications

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7851788B2 (en) 2006-02-28 2010-12-14 Pioneer Corporation Organic transistor and manufacturing method thereof

Also Published As

Publication number Publication date
WO2003041185A3 (en) 2003-11-06
EP1442484A2 (en) 2004-08-04
JP2005509298A (ja) 2005-04-07
US7352000B2 (en) 2008-04-01
US20060011909A1 (en) 2006-01-19
US20060006381A1 (en) 2006-01-12
US20030102471A1 (en) 2003-06-05
US6946676B2 (en) 2005-09-20
US7352038B2 (en) 2008-04-01
AU2002337959A1 (en) 2003-05-19
WO2003041185A2 (en) 2003-05-15

Similar Documents

Publication Publication Date Title
US6946676B2 (en) Organic thin film transistor with polymeric interface
US6617609B2 (en) Organic thin film transistor with siloxane polymer interface
US6433359B1 (en) Surface modifying layers for organic thin film transistors
EP2436056B1 (en) Electronic device comprising organic crosslinkable dielectrics and method of preparation thereof
KR101508780B1 (ko) 유기 박막 트랜지스터의 제조방법 및 그에 의해 제조된 유기 박막 트랜지스터
CN104105726B (zh) 用于有机电子器件的平坦化层
JP2007528811A (ja) 有機ポリマー、ラミネート、およびコンデンサー
JP2007512680A (ja) 薄膜トランジスタの封止方法
KR101451761B1 (ko) 박막 트랜지스터용 게이트 절연막 형성제
US8692238B2 (en) Semiconductor devices and methods of preparation
JP2004128467A (ja) 電界効果トランジスタ
US6994805B2 (en) Polythiophene polymer with high charge-carrier mobilities, method for fabricating the polymer, and semiconductor component and organic field effect transistor including the polymer
KR101856563B1 (ko) 액정성 유기박막 트랜지스터 및 그 제조방법
KR101258294B1 (ko) 가교성 유기 절연체 형성용 조성물 및 이를 이용하여제조된 유기 절연체
KR101685786B1 (ko) 알콕시실란기 함유 공중합체를 이용한 유기 전자 소자 응용
KR100696195B1 (ko) 저온 경화형 고분자 게이트 절연막 및 이를 적용한 유기박막 트랜지스터
WO2007132845A1 (ja) 有機半導体デバイス及びその製造方法
KR101417244B1 (ko) 산화물 층 또는 유기물 층과 유기 고분자 층을 포함하는 하이브리드 층 및 그 제조 방법

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

A201 Request for examination
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000