KR20050012791A - 기상 성장 장치 및 기상 성장 방법 - Google Patents
기상 성장 장치 및 기상 성장 방법Info
- Publication number
- KR20050012791A KR20050012791A KR10-2004-7020271A KR20047020271A KR20050012791A KR 20050012791 A KR20050012791 A KR 20050012791A KR 20047020271 A KR20047020271 A KR 20047020271A KR 20050012791 A KR20050012791 A KR 20050012791A
- Authority
- KR
- South Korea
- Prior art keywords
- wafer
- heat flow
- heat
- vapor phase
- reactor
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 17
- 239000012808 vapor phase Substances 0.000 title description 5
- 238000001947 vapour-phase growth Methods 0.000 claims abstract description 38
- 238000010438 heat treatment Methods 0.000 claims abstract description 32
- 239000000463 material Substances 0.000 claims abstract description 22
- 239000002994 raw material Substances 0.000 claims abstract description 10
- 239000010409 thin film Substances 0.000 claims description 17
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 16
- 229910002804 graphite Inorganic materials 0.000 claims description 15
- 239000010439 graphite Substances 0.000 claims description 15
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 11
- 229910052750 molybdenum Inorganic materials 0.000 claims description 11
- 239000011733 molybdenum Substances 0.000 claims description 11
- 229910052582 BN Inorganic materials 0.000 claims description 3
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 229910003481 amorphous carbon Inorganic materials 0.000 claims description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 3
- 239000010408 film Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 27
- 230000000052 comparative effect Effects 0.000 description 8
- 229910052799 carbon Inorganic materials 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 230000004907 flux Effects 0.000 description 7
- 239000012159 carrier gas Substances 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1004—Apparatus with means for measuring, testing, or sensing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1004—Apparatus with means for measuring, testing, or sensing
- Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1004—Apparatus with means for measuring, testing, or sensing
- Y10T117/1012—Apparatus with means for measuring, testing, or sensing with a window or port for visual observation or examination
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1016—Apparatus with means for treating single-crystal [e.g., heat treating]
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mechanical Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (8)
- 밀폐 가능한 반응로와, 상기 반응로 내에 설치되고 소정의 위치에 웨이퍼를 배치하기 위한 웨이퍼 수용체와, 상기 웨이퍼를 향해서 원료가스를 공급하기 위한 가스공급 수단과, 상기 웨이퍼를 가열하기 위한 가열 수단을 최소한 포함하며,상기 반응로 내에서 상기 가열 수단에 의해 상기 웨이퍼 수용체를 통하여 웨이퍼를 가열하면서, 고온 상태로 원료가스를 공급함으로써, 상기 웨이퍼 표면에 성장막을 형성하는 기상 성장 장치에 있어서,상기 웨이퍼 수용체는, 상기 웨이퍼를 수용하기 위한 공간부가 형성된 열류 제어부와, 상기 열류 제어부에 접합되어, 상기 공간부에 수용된 웨이퍼에 열을 전도하기 위한 열류 전도부로 구성되며,상기 열류 제어부와 상기 열류 전도부가 근접하는 평면 및 곡면 사이에는 균일한 열저항 Rg가 존재하는 것을 특징으로 하는 기상 성장 장치.
- 제1항에 있어서,상기 열류 전도부 이면으로부터 상기 웨이퍼 표면을 향하는 열 전달 경로의 열저항 R1와 상기 열류 전도부 이면으로부터 상기 열류 제어부 표면을 향하는 열 전달 경로의 열저항 R2의 비 R2/R1가 0.8 이상 1.2 이하인 것을 특징으로 하는 기상성장 장치.
- 제1항 또는 제2항에 있어서,상기 열저항 Rg는 1.0×10-6m2K/W 이상 5.0×10-3m2K/W 이하인 것을 특징으로 하는 기상 성장 장치.
- 제1항 내지 제3항 중 어느 한 항에 있어서,상기 열류 제어부와 상기 열류 전도부의 극간 거리는, 0.00lmm에서 1mm의 범위에서 동일한 것을 특징으로 하는 기상 성장 장치.
- 제1항 내지 제4항 중 어느 한 항에 있어서,상기 열류 제어부는, 상기 열류 전도부 상에 배치되는 웨이퍼의 열 전도율의 0.5배 이상 20배 이하의 열 전도율을 가지는 재질로 형성되어 있는 것을 특징으로 하는 기상 성장 장치.
- 제1항 내지 제5항 중 어느 한 항에 있어서,상기 열류 전도부는, 50W/mK 이상 450W/mK 이하의 열 전도율을 가지는 재질로 형성되어 있는 것을 특징으로 하는 기상 성장 장치.
- 제1항 내지 제6항 중 어느 한 항에 있어서,상기 열류 제어부는, 무정형 카본, 질화알루미늄, 그래파이트, 실리콘, 탄화 규소, 몰리브덴, 파이로리테크 보론 니트리드, 알루미나 중 어느 하나로 형성되고,상기 열류 전도부는, 몰리브덴, 그래파이트, 금, 은 중 어느 하나로 형성되는 것을 특징으로 하는 기상 성장 장치.
- 밀폐 가능한 반응로와, 상기 반응로 내에 설치되어 소정의 위치에 웨이퍼를 배치하기 위한 웨이퍼 수용체와, 웨이퍼로 향해서 원료가스를 공급하기 위한 가스공급 수단과, 상기 웨이퍼를 가열하기 위한 가열 수단을 포함하는 기상 성장 장치를 이용하여,상기 반응로 내에서 상기 가열 수단에 의해 상기 웨이퍼 수용체를 통하여 웨이퍼를 가열하면서, 고온 상태로 원료가스를 공급함으로써, 상기 웨이퍼 표면에 박막을 형성하는 기상 성장 방법에 있어서,박막을 기상 성장시킬 때의 상기 웨이퍼 수용체 표면과 상기 웨이퍼 표면의 온도차를 2℃ 이내로 하는 것을 특징으로 하는 기상 성장 방법.
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002172407 | 2002-06-13 | ||
JPJP-P-2002-00172407 | 2002-06-13 | ||
JPJP-P-2002-00238207 | 2002-08-19 | ||
JP2002238207A JP3882141B2 (ja) | 2002-06-13 | 2002-08-19 | 気相成長装置および気相成長方法 |
PCT/JP2002/010714 WO2003107404A1 (ja) | 2002-06-13 | 2002-10-16 | 気相成長装置および気相成長方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20050012791A true KR20050012791A (ko) | 2005-02-02 |
KR100632454B1 KR100632454B1 (ko) | 2006-10-11 |
Family
ID=29738383
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020047020271A KR100632454B1 (ko) | 2002-06-13 | 2002-10-16 | 기상 성장 장치 및 기상 성장 방법 |
Country Status (8)
Country | Link |
---|---|
US (1) | US7314519B2 (ko) |
EP (1) | EP1533834B1 (ko) |
JP (1) | JP3882141B2 (ko) |
KR (1) | KR100632454B1 (ko) |
CN (1) | CN1322551C (ko) |
CA (1) | CA2486664C (ko) |
TW (1) | TWI254979B (ko) |
WO (1) | WO2003107404A1 (ko) |
Families Citing this family (10)
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KR101322217B1 (ko) | 2004-02-25 | 2013-10-25 | 닛코킨조쿠 가부시키가이샤 | 기상 성장 장치 |
CN1300189C (zh) * | 2005-02-05 | 2007-02-14 | 浙江大学 | 烯烃气相聚合反应在线控制装置及其方法 |
US20070217119A1 (en) * | 2006-03-17 | 2007-09-20 | David Johnson | Apparatus and Method for Carrying Substrates |
TW201205713A (en) * | 2010-07-21 | 2012-02-01 | Chi Mei Lighting Tech Corp | Vapor deposition apparatus and susceptor |
US8535445B2 (en) * | 2010-08-13 | 2013-09-17 | Veeco Instruments Inc. | Enhanced wafer carrier |
CN102605341A (zh) * | 2011-01-20 | 2012-07-25 | 奇力光电科技股份有限公司 | 气相沉积装置及承载盘 |
US20120225206A1 (en) * | 2011-03-01 | 2012-09-06 | Applied Materials, Inc. | Apparatus and Process for Atomic Layer Deposition |
JP2014116331A (ja) * | 2011-11-30 | 2014-06-26 | Dowa Electronics Materials Co Ltd | 結晶成長装置、結晶成長方法及びサセプタ |
CN103526285B (zh) * | 2013-09-23 | 2016-03-30 | 北京思捷爱普半导体设备有限公司 | 一种led外延片倒置mocvd反应炉 |
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KR100351049B1 (ko) * | 1999-07-26 | 2002-09-09 | 삼성전자 주식회사 | 웨이퍼 가열 방법 및 이를 적용한 장치 |
JP2002145670A (ja) | 1999-09-06 | 2002-05-22 | Ibiden Co Ltd | 半導体製造・検査装置用セラミック基板 |
EP1249433A4 (en) * | 1999-09-06 | 2005-01-05 | Ibiden Co Ltd | BRIQUETTE AND CERAMIC SINTERED CARBON ALUMINUM NITRIDE SUBSTRATE FOR SEMICONDUCTOR MANUFACTURING OR VERIFICATION EQUIPMENT |
US6878250B1 (en) * | 1999-12-16 | 2005-04-12 | Honeywell International Inc. | Sputtering targets formed from cast materials |
US6331233B1 (en) * | 2000-02-02 | 2001-12-18 | Honeywell International Inc. | Tantalum sputtering target with fine grains and uniform texture and method of manufacture |
JP2001230234A (ja) | 2000-02-16 | 2001-08-24 | Hitachi Ltd | プラズマ処理装置及び方法 |
-
2002
- 2002-08-19 JP JP2002238207A patent/JP3882141B2/ja not_active Expired - Lifetime
- 2002-10-16 CN CNB028291352A patent/CN1322551C/zh not_active Expired - Lifetime
- 2002-10-16 CA CA2486664A patent/CA2486664C/en not_active Expired - Lifetime
- 2002-10-16 US US10/515,969 patent/US7314519B2/en not_active Expired - Lifetime
- 2002-10-16 KR KR1020047020271A patent/KR100632454B1/ko active IP Right Grant
- 2002-10-16 WO PCT/JP2002/010714 patent/WO2003107404A1/ja active Application Filing
- 2002-10-16 EP EP02807525.7A patent/EP1533834B1/en not_active Expired - Lifetime
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2003
- 2003-05-28 TW TW092114413A patent/TWI254979B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR100632454B1 (ko) | 2006-10-11 |
JP3882141B2 (ja) | 2007-02-14 |
WO2003107404A1 (ja) | 2003-12-24 |
JP2004072054A (ja) | 2004-03-04 |
CN1322551C (zh) | 2007-06-20 |
CN1628371A (zh) | 2005-06-15 |
CA2486664C (en) | 2010-12-07 |
TW200400548A (en) | 2004-01-01 |
US7314519B2 (en) | 2008-01-01 |
EP1533834B1 (en) | 2013-11-20 |
US20050166836A1 (en) | 2005-08-04 |
EP1533834A4 (en) | 2007-01-17 |
TWI254979B (en) | 2006-05-11 |
EP1533834A1 (en) | 2005-05-25 |
WO2003107404A8 (en) | 2005-01-06 |
CA2486664A1 (en) | 2003-12-24 |
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