CN1322551C - 气相生长装置以及气相生长方法 - Google Patents
气相生长装置以及气相生长方法 Download PDFInfo
- Publication number
- CN1322551C CN1322551C CNB028291352A CN02829135A CN1322551C CN 1322551 C CN1322551 C CN 1322551C CN B028291352 A CNB028291352 A CN B028291352A CN 02829135 A CN02829135 A CN 02829135A CN 1322551 C CN1322551 C CN 1322551C
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- wafer
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Links
- 239000012808 vapor phase Substances 0.000 title claims abstract description 7
- 238000000034 method Methods 0.000 title claims description 10
- 239000000463 material Substances 0.000 claims abstract description 19
- 238000010438 heat treatment Methods 0.000 claims abstract description 13
- 238000006243 chemical reaction Methods 0.000 claims abstract description 8
- 239000012530 fluid Substances 0.000 claims description 65
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 18
- 229910002804 graphite Inorganic materials 0.000 claims description 18
- 239000010439 graphite Substances 0.000 claims description 18
- 238000001947 vapour-phase growth Methods 0.000 claims description 13
- 230000015572 biosynthetic process Effects 0.000 claims description 12
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 11
- 229910052750 molybdenum Inorganic materials 0.000 claims description 11
- 239000011733 molybdenum Substances 0.000 claims description 11
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 9
- 229910017083 AlN Inorganic materials 0.000 claims description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910003481 amorphous carbon Inorganic materials 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 229910052580 B4C Inorganic materials 0.000 claims description 2
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 claims description 2
- 238000000197 pyrolysis Methods 0.000 claims description 2
- 230000004308 accommodation Effects 0.000 abstract 3
- 230000005540 biological transmission Effects 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 217
- 239000007789 gas Substances 0.000 description 25
- 238000004458 analytical method Methods 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 10
- 229910052799 carbon Inorganic materials 0.000 description 8
- 230000004907 flux Effects 0.000 description 7
- 239000012159 carrier gas Substances 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 230000008676 import Effects 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 230000012010 growth Effects 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- 230000036760 body temperature Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007323 disproportionation reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- ZZUFCTLCJUWOSV-UHFFFAOYSA-N furosemide Chemical compound C1=C(Cl)C(S(=O)(=O)N)=CC(C(O)=O)=C1NCC1=CC=CO1 ZZUFCTLCJUWOSV-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1004—Apparatus with means for measuring, testing, or sensing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1004—Apparatus with means for measuring, testing, or sensing
- Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1004—Apparatus with means for measuring, testing, or sensing
- Y10T117/1012—Apparatus with means for measuring, testing, or sensing with a window or port for visual observation or examination
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1016—Apparatus with means for treating single-crystal [e.g., heat treating]
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mechanical Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
氢气 | 石墨(比较例) | α-碳(实施例) | InP | |
密度【kg/m3】 | 0.00259 | 2000 | 1550 | 4787 |
比热【J/kgK】 | 14500 | 1000 | 1000 | 368 |
热传导率【W/m·K】 | 0.4048 | 100 | 10 | 14.3 |
Claims (7)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002172407 | 2002-06-13 | ||
JP172407/2002 | 2002-06-13 | ||
JP238207/2002 | 2002-08-19 | ||
JP2002238207A JP3882141B2 (ja) | 2002-06-13 | 2002-08-19 | 気相成長装置および気相成長方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1628371A CN1628371A (zh) | 2005-06-15 |
CN1322551C true CN1322551C (zh) | 2007-06-20 |
Family
ID=29738383
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB028291352A Expired - Lifetime CN1322551C (zh) | 2002-06-13 | 2002-10-16 | 气相生长装置以及气相生长方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US7314519B2 (zh) |
EP (1) | EP1533834B1 (zh) |
JP (1) | JP3882141B2 (zh) |
KR (1) | KR100632454B1 (zh) |
CN (1) | CN1322551C (zh) |
CA (1) | CA2486664C (zh) |
TW (1) | TWI254979B (zh) |
WO (1) | WO2003107404A1 (zh) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1720200B1 (en) * | 2004-02-25 | 2014-12-03 | Nippon Mining & Metals Co., Ltd. | Epitaxially growing equipment |
CN1300189C (zh) * | 2005-02-05 | 2007-02-14 | 浙江大学 | 烯烃气相聚合反应在线控制装置及其方法 |
US20070217119A1 (en) * | 2006-03-17 | 2007-09-20 | David Johnson | Apparatus and Method for Carrying Substrates |
TW201205713A (en) * | 2010-07-21 | 2012-02-01 | Chi Mei Lighting Tech Corp | Vapor deposition apparatus and susceptor |
US8535445B2 (en) * | 2010-08-13 | 2013-09-17 | Veeco Instruments Inc. | Enhanced wafer carrier |
CN102605341A (zh) * | 2011-01-20 | 2012-07-25 | 奇力光电科技股份有限公司 | 气相沉积装置及承载盘 |
US20120225206A1 (en) * | 2011-03-01 | 2012-09-06 | Applied Materials, Inc. | Apparatus and Process for Atomic Layer Deposition |
JP2014116331A (ja) * | 2011-11-30 | 2014-06-26 | Dowa Electronics Materials Co Ltd | 結晶成長装置、結晶成長方法及びサセプタ |
CN103526285B (zh) * | 2013-09-23 | 2016-03-30 | 北京思捷爱普半导体设备有限公司 | 一种led外延片倒置mocvd反应炉 |
US10415151B1 (en) | 2014-03-27 | 2019-09-17 | Varian Semiconductor Equipment Associates, Inc | Apparatus for controlling heat flow within a silicon melt |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0282528A (ja) * | 1988-09-19 | 1990-03-23 | Fujitsu Ltd | プラズマcvd装置 |
WO1992005577A1 (fr) * | 1990-09-21 | 1992-04-02 | Fujitsu Limited | Procede et appareil pour former par croissance des cristaux de composes semi-conducteurs |
JPH10107018A (ja) * | 1996-09-23 | 1998-04-24 | Samsung Electron Co Ltd | 半導体ウェーハの熱処理装置 |
CN1183020A (zh) * | 1996-08-07 | 1998-05-27 | 康塞普特系统设计公司 | 具有反馈控制的区域加热系统 |
CN1282003A (zh) * | 1999-07-26 | 2001-01-31 | 三星电子株式会社 | 晶片加热装置以及使用其加热晶片的方法 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5510436A (en) | 1978-07-05 | 1980-01-24 | Nec Corp | Susceptor for vapor phase crystal growth |
JPS6190186A (ja) | 1984-10-09 | 1986-05-08 | 株式会社 セガ・エンタ−プライゼス | タイプライテイング練習機 |
JPS61219130A (ja) | 1985-03-25 | 1986-09-29 | Toshiba Mach Co Ltd | 気相成長装置 |
JPH0369113A (ja) | 1989-08-09 | 1991-03-25 | Fujitsu Ltd | 半導体製造装置 |
JPH07176482A (ja) * | 1991-05-31 | 1995-07-14 | At & T Corp | エピタキシャル成長方法および装置 |
JP2750331B2 (ja) * | 1992-04-23 | 1998-05-13 | 株式会社ジャパンエナジー | エピタキシャル成長用基板およびエピタキシャル成長方法 |
JPH06310438A (ja) * | 1993-04-22 | 1994-11-04 | Mitsubishi Electric Corp | 化合物半導体気相成長用基板ホルダおよび化合物半導体気相成長装置 |
JP3257741B2 (ja) * | 1994-03-03 | 2002-02-18 | 東京エレクトロン株式会社 | プラズマエッチング装置及び方法 |
US5584936A (en) * | 1995-12-14 | 1996-12-17 | Cvd, Incorporated | Susceptor for semiconductor wafer processing |
JP3867328B2 (ja) * | 1996-12-04 | 2007-01-10 | ソニー株式会社 | スパッタリングターゲット及びその製造方法 |
JPH10303288A (ja) * | 1997-04-26 | 1998-11-13 | Anelva Corp | プラズマ処理装置用基板ホルダー |
JPH11180796A (ja) | 1997-12-22 | 1999-07-06 | Japan Energy Corp | 気相成長方法およびその方法を適用した気相成長装置 |
DE19934336A1 (de) * | 1998-09-03 | 2000-03-09 | Siemens Ag | Vorrichtung zum Herstellen und Bearbeiten von Halbleitersubstraten |
JP2000355766A (ja) | 1999-06-15 | 2000-12-26 | Hitachi Kokusai Electric Inc | 基板処理装置及び基板処理方法 |
JP2002145670A (ja) | 1999-09-06 | 2002-05-22 | Ibiden Co Ltd | 半導体製造・検査装置用セラミック基板 |
EP1249433A4 (en) * | 1999-09-06 | 2005-01-05 | Ibiden Co Ltd | BRIQUETTE AND CERAMIC SINTERED CARBON ALUMINUM NITRIDE SUBSTRATE FOR SEMICONDUCTOR MANUFACTURING OR VERIFICATION EQUIPMENT |
US6878250B1 (en) * | 1999-12-16 | 2005-04-12 | Honeywell International Inc. | Sputtering targets formed from cast materials |
US6331233B1 (en) * | 2000-02-02 | 2001-12-18 | Honeywell International Inc. | Tantalum sputtering target with fine grains and uniform texture and method of manufacture |
JP2001230234A (ja) | 2000-02-16 | 2001-08-24 | Hitachi Ltd | プラズマ処理装置及び方法 |
-
2002
- 2002-08-19 JP JP2002238207A patent/JP3882141B2/ja not_active Expired - Lifetime
- 2002-10-16 CA CA2486664A patent/CA2486664C/en not_active Expired - Lifetime
- 2002-10-16 US US10/515,969 patent/US7314519B2/en not_active Expired - Lifetime
- 2002-10-16 CN CNB028291352A patent/CN1322551C/zh not_active Expired - Lifetime
- 2002-10-16 EP EP02807525.7A patent/EP1533834B1/en not_active Expired - Lifetime
- 2002-10-16 KR KR1020047020271A patent/KR100632454B1/ko active IP Right Grant
- 2002-10-16 WO PCT/JP2002/010714 patent/WO2003107404A1/ja active Application Filing
-
2003
- 2003-05-28 TW TW092114413A patent/TWI254979B/zh not_active IP Right Cessation
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0282528A (ja) * | 1988-09-19 | 1990-03-23 | Fujitsu Ltd | プラズマcvd装置 |
WO1992005577A1 (fr) * | 1990-09-21 | 1992-04-02 | Fujitsu Limited | Procede et appareil pour former par croissance des cristaux de composes semi-conducteurs |
CN1183020A (zh) * | 1996-08-07 | 1998-05-27 | 康塞普特系统设计公司 | 具有反馈控制的区域加热系统 |
JPH10107018A (ja) * | 1996-09-23 | 1998-04-24 | Samsung Electron Co Ltd | 半導体ウェーハの熱処理装置 |
CN1282003A (zh) * | 1999-07-26 | 2001-01-31 | 三星电子株式会社 | 晶片加热装置以及使用其加热晶片的方法 |
Also Published As
Publication number | Publication date |
---|---|
US7314519B2 (en) | 2008-01-01 |
CN1628371A (zh) | 2005-06-15 |
JP2004072054A (ja) | 2004-03-04 |
TW200400548A (en) | 2004-01-01 |
KR100632454B1 (ko) | 2006-10-11 |
EP1533834B1 (en) | 2013-11-20 |
TWI254979B (en) | 2006-05-11 |
CA2486664C (en) | 2010-12-07 |
US20050166836A1 (en) | 2005-08-04 |
WO2003107404A8 (en) | 2005-01-06 |
CA2486664A1 (en) | 2003-12-24 |
WO2003107404A1 (ja) | 2003-12-24 |
KR20050012791A (ko) | 2005-02-02 |
EP1533834A1 (en) | 2005-05-25 |
JP3882141B2 (ja) | 2007-02-14 |
EP1533834A4 (en) | 2007-01-17 |
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