CN100355028C - 气相生长装置 - Google Patents
气相生长装置 Download PDFInfo
- Publication number
- CN100355028C CN100355028C CNB028291344A CN02829134A CN100355028C CN 100355028 C CN100355028 C CN 100355028C CN B028291344 A CNB028291344 A CN B028291344A CN 02829134 A CN02829134 A CN 02829134A CN 100355028 C CN100355028 C CN 100355028C
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- wafer
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- 238000000927 vapour-phase epitaxy Methods 0.000 title 1
- 239000000463 material Substances 0.000 claims abstract description 16
- 238000010438 heat treatment Methods 0.000 claims abstract description 9
- 238000006243 chemical reaction Methods 0.000 claims abstract description 5
- 239000002994 raw material Substances 0.000 claims description 6
- 229910003481 amorphous carbon Inorganic materials 0.000 claims description 4
- 238000001947 vapour-phase growth Methods 0.000 abstract description 11
- 235000012431 wafers Nutrition 0.000 description 216
- 239000007789 gas Substances 0.000 description 24
- 238000004458 analytical method Methods 0.000 description 10
- 229910052799 carbon Inorganic materials 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 9
- 229910002804 graphite Inorganic materials 0.000 description 9
- 239000010439 graphite Substances 0.000 description 9
- 230000004907 flux Effects 0.000 description 7
- 239000012159 carrier gas Substances 0.000 description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 5
- 229910052750 molybdenum Inorganic materials 0.000 description 5
- 239000011733 molybdenum Substances 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 230000008676 import Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 230000012010 growth Effects 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- 230000036760 body temperature Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007323 disproportionation reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- ZZUFCTLCJUWOSV-UHFFFAOYSA-N furosemide Chemical compound C1=C(Cl)C(S(=O)(=O)N)=CC(C(O)=O)=C1NCC1=CC=CO1 ZZUFCTLCJUWOSV-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1064—Seed pulling including a fully-sealed or vacuum-maintained crystallization chamber [e.g., ampoule]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mechanical Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
氢气 | 石墨(比较例) | α-碳(实施例) | InP | |
密度【kg/m3】 | 0.00259 | 2000 | 1550 | 4787 |
比热【J/kgK】 | 14500 | 1000 | 1000 | 368 |
热传导率【W/m·K】 | 0.4048 | 100 | 10 | 14.3 |
Claims (3)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002172391 | 2002-06-13 | ||
JP172391/2002 | 2002-06-13 | ||
JP238035/2002 | 2002-08-19 | ||
JP2002238035A JP4216541B2 (ja) | 2002-06-13 | 2002-08-19 | 気相成長装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1630935A CN1630935A (zh) | 2005-06-22 |
CN100355028C true CN100355028C (zh) | 2007-12-12 |
Family
ID=29738382
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB028291344A Expired - Lifetime CN100355028C (zh) | 2002-06-13 | 2002-10-16 | 气相生长装置 |
Country Status (9)
Country | Link |
---|---|
US (1) | US7344597B2 (zh) |
EP (1) | EP1533833B1 (zh) |
JP (1) | JP4216541B2 (zh) |
KR (1) | KR100625823B1 (zh) |
CN (1) | CN100355028C (zh) |
CA (1) | CA2486662C (zh) |
DE (1) | DE60233684D1 (zh) |
TW (1) | TWI262548B (zh) |
WO (1) | WO2003107403A1 (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4514466B2 (ja) * | 2003-02-14 | 2010-07-28 | 株式会社テクノネットワーク四国 | 複素多環系化合物 |
WO2005078024A1 (ja) | 2004-02-13 | 2005-08-25 | Kochi University | 複素多環化合物及び色素 |
EP1720200B1 (en) * | 2004-02-25 | 2014-12-03 | Nippon Mining & Metals Co., Ltd. | Epitaxially growing equipment |
JP5926742B2 (ja) * | 2010-12-30 | 2016-05-25 | ビーコ・インストゥルメンツ・インコーポレイテッド | 反応器及びウェハを処理する方法 |
JP7107949B2 (ja) * | 2017-01-27 | 2022-07-27 | アイクストロン、エスイー | 搬送リング |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0282528A (ja) * | 1988-09-19 | 1990-03-23 | Fujitsu Ltd | プラズマcvd装置 |
US5304247A (en) * | 1990-09-21 | 1994-04-19 | Fujitsu Limited | Apparatus for depositing compound semiconductor crystal |
CN1177830A (zh) * | 1996-09-23 | 1998-04-01 | 三星电子株式会社 | 半导体晶片热处理设备 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5510436A (en) * | 1978-07-05 | 1980-01-24 | Nec Corp | Susceptor for vapor phase crystal growth |
JPH0688872B2 (ja) * | 1984-11-14 | 1994-11-09 | 富士通株式会社 | 気相成長装置 |
JPH01291421A (ja) * | 1988-05-19 | 1989-11-24 | Toshiba Corp | 気相成長装置 |
JPH0686662B2 (ja) | 1989-11-02 | 1994-11-02 | イビデン株式会社 | Cvd用サセプター |
JPH07176482A (ja) | 1991-05-31 | 1995-07-14 | At & T Corp | エピタキシャル成長方法および装置 |
JP3257741B2 (ja) * | 1994-03-03 | 2002-02-18 | 東京エレクトロン株式会社 | プラズマエッチング装置及び方法 |
KR100203780B1 (ko) * | 1996-09-23 | 1999-06-15 | 윤종용 | 반도체 웨이퍼 열처리 장치 |
JPH1116991A (ja) | 1997-06-19 | 1999-01-22 | Tokai Carbon Co Ltd | 半導体製造装置用カーボン支持体 |
JPH11180796A (ja) * | 1997-12-22 | 1999-07-06 | Japan Energy Corp | 気相成長方法およびその方法を適用した気相成長装置 |
DE19934336A1 (de) * | 1998-09-03 | 2000-03-09 | Siemens Ag | Vorrichtung zum Herstellen und Bearbeiten von Halbleitersubstraten |
JP2000355766A (ja) | 1999-06-15 | 2000-12-26 | Hitachi Kokusai Electric Inc | 基板処理装置及び基板処理方法 |
JP2001230234A (ja) | 2000-02-16 | 2001-08-24 | Hitachi Ltd | プラズマ処理装置及び方法 |
-
2002
- 2002-08-19 JP JP2002238035A patent/JP4216541B2/ja not_active Expired - Lifetime
- 2002-10-16 EP EP02807524A patent/EP1533833B1/en not_active Expired - Lifetime
- 2002-10-16 CN CNB028291344A patent/CN100355028C/zh not_active Expired - Lifetime
- 2002-10-16 KR KR1020047020270A patent/KR100625823B1/ko active IP Right Grant
- 2002-10-16 US US10/515,970 patent/US7344597B2/en not_active Expired - Lifetime
- 2002-10-16 WO PCT/JP2002/010713 patent/WO2003107403A1/ja active Application Filing
- 2002-10-16 CA CA2486662A patent/CA2486662C/en not_active Expired - Lifetime
- 2002-10-16 DE DE60233684T patent/DE60233684D1/de not_active Expired - Lifetime
-
2003
- 2003-05-28 TW TW092114411A patent/TWI262548B/zh not_active IP Right Cessation
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0282528A (ja) * | 1988-09-19 | 1990-03-23 | Fujitsu Ltd | プラズマcvd装置 |
US5304247A (en) * | 1990-09-21 | 1994-04-19 | Fujitsu Limited | Apparatus for depositing compound semiconductor crystal |
CN1177830A (zh) * | 1996-09-23 | 1998-04-01 | 三星电子株式会社 | 半导体晶片热处理设备 |
Also Published As
Publication number | Publication date |
---|---|
KR20050012790A (ko) | 2005-02-02 |
EP1533833B1 (en) | 2009-09-09 |
CN1630935A (zh) | 2005-06-22 |
TWI262548B (en) | 2006-09-21 |
KR100625823B1 (ko) | 2006-09-20 |
CA2486662C (en) | 2010-06-01 |
US20050217564A1 (en) | 2005-10-06 |
EP1533833A4 (en) | 2007-01-17 |
US7344597B2 (en) | 2008-03-18 |
TW200406826A (en) | 2004-05-01 |
JP2004072053A (ja) | 2004-03-04 |
WO2003107403A1 (ja) | 2003-12-24 |
JP4216541B2 (ja) | 2009-01-28 |
DE60233684D1 (de) | 2009-10-22 |
CA2486662A1 (en) | 2003-12-24 |
EP1533833A1 (en) | 2005-05-25 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee |
Owner name: JX NIPPON MINING + METALS CORPORATION Free format text: FORMER NAME: NIPPON MINING + METALS CO., LTD. |
|
CP01 | Change in the name or title of a patent holder |
Address after: Tokyo, Japan Patentee after: JX Nippon Mining & Metals Corp. Address before: Tokyo, Japan Patentee before: Nippon Mining & Metals Co.,Ltd. |
|
CP01 | Change in the name or title of a patent holder |
Address after: Tokyo, Japan Patentee after: JX NIPPON MINING & METALS Corp. Address before: Tokyo, Japan Patentee before: JX Nippon Mining & Metals Corp. |
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CP01 | Change in the name or title of a patent holder | ||
CX01 | Expiry of patent term |
Granted publication date: 20071212 |
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CX01 | Expiry of patent term |