KR20040103911A - 전기화학적 에지 및 베벨 세정 공정 및 시스템 - Google Patents
전기화학적 에지 및 베벨 세정 공정 및 시스템 Download PDFInfo
- Publication number
- KR20040103911A KR20040103911A KR10-2004-7009888A KR20047009888A KR20040103911A KR 20040103911 A KR20040103911 A KR 20040103911A KR 20047009888 A KR20047009888 A KR 20047009888A KR 20040103911 A KR20040103911 A KR 20040103911A
- Authority
- KR
- South Korea
- Prior art keywords
- workpiece
- edge
- directing
- wafer
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000034 method Methods 0.000 title claims abstract description 220
- 230000008569 process Effects 0.000 title claims abstract description 134
- 238000004140 cleaning Methods 0.000 title claims abstract description 36
- 238000012545 processing Methods 0.000 claims abstract description 55
- 230000008021 deposition Effects 0.000 claims abstract description 22
- 239000010949 copper Substances 0.000 claims description 208
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 202
- 229910052802 copper Inorganic materials 0.000 claims description 202
- 239000007788 liquid Substances 0.000 claims description 72
- 238000005530 etching Methods 0.000 claims description 55
- 238000007747 plating Methods 0.000 claims description 51
- 239000004020 conductor Substances 0.000 claims description 49
- 238000000151 deposition Methods 0.000 claims description 41
- 238000011282 treatment Methods 0.000 claims description 41
- 238000004070 electrodeposition Methods 0.000 claims description 22
- 239000007921 spray Substances 0.000 claims description 7
- 238000005137 deposition process Methods 0.000 claims description 6
- 239000012530 fluid Substances 0.000 claims description 2
- 239000003595 mist Substances 0.000 claims description 2
- 238000005507 spraying Methods 0.000 claims 4
- 210000001364 upper extremity Anatomy 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 207
- 101100131296 Oryctolagus cuniculus ABCC2 gene Proteins 0.000 description 124
- 239000000243 solution Substances 0.000 description 102
- 239000003792 electrolyte Substances 0.000 description 29
- 238000000866 electrolytic etching Methods 0.000 description 19
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 14
- 239000000126 substance Substances 0.000 description 14
- 238000013459 approach Methods 0.000 description 13
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 12
- 238000001035 drying Methods 0.000 description 11
- 230000004888 barrier function Effects 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 239000007800 oxidant agent Substances 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 9
- 238000009713 electroplating Methods 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 230000008901 benefit Effects 0.000 description 6
- 238000011065 in-situ storage Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 230000001590 oxidative effect Effects 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000003486 chemical etching Methods 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000002253 acid Substances 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 229910000365 copper sulfate Inorganic materials 0.000 description 3
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000008151 electrolyte solution Substances 0.000 description 3
- 230000007717 exclusion Effects 0.000 description 3
- 238000011049 filling Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 150000001805 chlorine compounds Chemical class 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- -1 edge copper Chemical compound 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 238000009987 spinning Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 241001417527 Pempheridae Species 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000003929 acidic solution Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000002845 discoloration Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F3/00—Electrolytic etching or polishing
- C25F3/02—Etching
- C25F3/14—Etching locally
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F7/00—Constructional parts, or assemblies thereof, of cells for electrolytic removal of material from objects; Servicing or operating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3063—Electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electroplating Methods And Accessories (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Electrodes Of Semiconductors (AREA)
- Weting (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/032,318 US6833063B2 (en) | 2001-12-21 | 2001-12-21 | Electrochemical edge and bevel cleaning process and system |
| US10/032,318 | 2001-12-21 | ||
| US42493602P | 2002-11-08 | 2002-11-08 | |
| US60/424,936 | 2002-11-08 | ||
| PCT/US2002/041415 WO2003060963A2 (en) | 2001-12-21 | 2002-12-23 | Electrochemical edge and bevel cleaning process and system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20040103911A true KR20040103911A (ko) | 2004-12-09 |
Family
ID=26708251
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR10-2004-7009888A Withdrawn KR20040103911A (ko) | 2001-12-21 | 2002-12-23 | 전기화학적 에지 및 베벨 세정 공정 및 시스템 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US7029567B2 (enExample) |
| EP (1) | EP1456868A2 (enExample) |
| JP (1) | JP2005515629A (enExample) |
| KR (1) | KR20040103911A (enExample) |
| CN (1) | CN1636267A (enExample) |
| AU (1) | AU2002358291A1 (enExample) |
| TW (1) | TW594874B (enExample) |
| WO (1) | WO2003060963A2 (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100709590B1 (ko) * | 2006-01-04 | 2007-04-20 | (주)소슬 | 클러스터형 베벨에치장치 |
| KR100801711B1 (ko) * | 2007-02-27 | 2008-02-11 | 삼성전자주식회사 | 반도체 식각 및 증착 공정들을 수행하는 반도체 제조장비들 및 그를 이용한 반도체 소자의 형성방법들 |
Families Citing this family (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7686935B2 (en) * | 1998-10-26 | 2010-03-30 | Novellus Systems, Inc. | Pad-assisted electropolishing |
| US7780867B1 (en) * | 1999-10-01 | 2010-08-24 | Novellus Systems, Inc. | Edge bevel removal of copper from silicon wafers |
| DE10128507B4 (de) * | 2001-06-14 | 2008-07-17 | Mtu Aero Engines Gmbh | Verwendung einer Vorrichtung zum chemischen oder elektrochemischen Bearbeiten von Bauteilen |
| EP1473387A1 (de) * | 2003-05-02 | 2004-11-03 | Siemens Aktiengesellschaft | Verfahren zur Entschichtung eines Bauteils |
| US9236279B2 (en) * | 2003-06-27 | 2016-01-12 | Lam Research Corporation | Method of dielectric film treatment |
| US20050037620A1 (en) * | 2003-08-15 | 2005-02-17 | Berman Michael J. | Method for achieving wafer contact for electro-processing |
| US7648622B2 (en) * | 2004-02-27 | 2010-01-19 | Novellus Systems, Inc. | System and method for electrochemical mechanical polishing |
| US7998335B2 (en) * | 2005-06-13 | 2011-08-16 | Cabot Microelectronics Corporation | Controlled electrochemical polishing method |
| US20090266707A1 (en) * | 2005-08-26 | 2009-10-29 | Novellus Systems, Inc. | Pad-assisted electropolishing |
| US8100081B1 (en) | 2006-06-30 | 2012-01-24 | Novellus Systems, Inc. | Edge removal of films using externally generated plasma species |
| US9732416B1 (en) | 2007-04-18 | 2017-08-15 | Novellus Systems, Inc. | Wafer chuck with aerodynamic design for turbulence reduction |
| US8192822B2 (en) * | 2008-03-31 | 2012-06-05 | Memc Electronic Materials, Inc. | Edge etched silicon wafers |
| US8419964B2 (en) | 2008-08-27 | 2013-04-16 | Novellus Systems, Inc. | Apparatus and method for edge bevel removal of copper from silicon wafers |
| US8414790B2 (en) * | 2008-11-13 | 2013-04-09 | Lam Research Corporation | Bevel plasma treatment to enhance wet edge clean |
| KR20110099108A (ko) * | 2008-11-19 | 2011-09-06 | 엠이엠씨 일렉트로닉 머티리얼즈, 인크. | 반도체 웨이퍼의 에지를 스트리핑하기 위한 방법 및 시스템 |
| US8172646B2 (en) * | 2009-02-27 | 2012-05-08 | Novellus Systems, Inc. | Magnetically actuated chuck for edge bevel removal |
| KR101198412B1 (ko) * | 2009-12-30 | 2012-11-07 | 삼성전기주식회사 | 기판도금장치 및 기판도금방법 |
| US8853054B2 (en) | 2012-03-06 | 2014-10-07 | Sunedison Semiconductor Limited | Method of manufacturing silicon-on-insulator wafers |
| CN102623323A (zh) * | 2012-04-01 | 2012-08-01 | 南通富士通微电子股份有限公司 | 半导体圆片喷液蚀刻系统及方法 |
| CN103021937B (zh) * | 2013-01-09 | 2015-07-08 | 华进半导体封装先导技术研发中心有限公司 | 化学腐蚀硅通孔面过电镀铜层的装置及方法 |
| SG11201508466QA (en) * | 2013-05-09 | 2015-11-27 | Acm Research Shanghai Inc | Apparatus and method for plating and/or polishing wafer |
| CN105088328B (zh) * | 2014-05-07 | 2018-11-06 | 盛美半导体设备（上海）有限公司 | 电化学抛光供液装置 |
| CN106206236B (zh) * | 2016-08-30 | 2018-05-04 | 上海华力微电子有限公司 | 刻蚀设备以及用于去除晶背边缘薄膜的晶背边缘刻蚀方法 |
| SG11202006936RA (en) * | 2018-02-01 | 2020-08-28 | Applied Materials Inc | Cleaning components and methods in a plating system |
| DE102018111858A1 (de) * | 2018-05-17 | 2019-11-21 | Nexwafe Gmbh | Vorrichtung und Verfahren zum einseitigen Ätzen einer Halbleiterschicht eines Werkstücks |
| CN110867449B (zh) * | 2019-11-12 | 2021-09-07 | 长江存储科技有限责任公司 | 三维存储器及其制备方法 |
| KR20220107012A (ko) * | 2019-11-27 | 2022-08-01 | 램 리써치 코포레이션 | 쓰루-레지스트 (through-resist) 도금을 위한 에지 제거 |
| JP7475945B2 (ja) * | 2020-04-20 | 2024-04-30 | 東京エレクトロン株式会社 | 基板処理装置および基板処理方法 |
| KR20220130663A (ko) * | 2021-03-17 | 2022-09-27 | 가부시키가이샤 에바라 세이사꾸쇼 | 도금 장치 및 도금 장치의 콘택트 부재 세정 방법 |
| JP7696241B2 (ja) * | 2021-07-06 | 2025-06-20 | 東京エレクトロン株式会社 | 基板処理装置および基板処理方法 |
| WO2023079634A1 (ja) * | 2021-11-04 | 2023-05-11 | 株式会社荏原製作所 | めっき装置および基板洗浄方法 |
| CN114855257B (zh) * | 2022-04-20 | 2024-06-25 | 湖南华翔医疗科技有限公司 | 金属膜材的边缘抛光方法及金属膜材和应用 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5284554A (en) * | 1992-01-09 | 1994-02-08 | International Business Machines Corporation | Electrochemical micromachining tool and process for through-mask patterning of thin metallic films supported by non-conducting or poorly conducting surfaces |
| US5567300A (en) * | 1994-09-02 | 1996-10-22 | Ibm Corporation | Electrochemical metal removal technique for planarization of surfaces |
| US5865984A (en) * | 1997-06-30 | 1999-02-02 | International Business Machines Corporation | Electrochemical etching apparatus and method for spirally etching a workpiece |
| US6056869A (en) * | 1998-06-04 | 2000-05-02 | International Business Machines Corporation | Wafer edge deplater for chemical mechanical polishing of substrates |
| US6883063B2 (en) * | 1998-06-30 | 2005-04-19 | Emc Corporation | Method and apparatus for initializing logical objects in a data storage system |
| US6395152B1 (en) * | 1998-07-09 | 2002-05-28 | Acm Research, Inc. | Methods and apparatus for electropolishing metal interconnections on semiconductor devices |
| US6610190B2 (en) * | 2000-11-03 | 2003-08-26 | Nutool, Inc. | Method and apparatus for electrodeposition of uniform film with minimal edge exclusion on substrate |
| JP2000331975A (ja) * | 1999-05-19 | 2000-11-30 | Ebara Corp | ウエハ洗浄装置 |
| US6309981B1 (en) * | 1999-10-01 | 2001-10-30 | Novellus Systems, Inc. | Edge bevel removal of copper from silicon wafers |
| US6352623B1 (en) * | 1999-12-17 | 2002-03-05 | Nutool, Inc. | Vertically configured chamber used for multiple processes |
-
2002
- 2002-12-20 US US10/327,609 patent/US7029567B2/en not_active Expired - Fee Related
- 2002-12-23 TW TW091137054A patent/TW594874B/zh not_active IP Right Cessation
- 2002-12-23 WO PCT/US2002/041415 patent/WO2003060963A2/en not_active Ceased
- 2002-12-23 JP JP2003560965A patent/JP2005515629A/ja not_active Withdrawn
- 2002-12-23 KR KR10-2004-7009888A patent/KR20040103911A/ko not_active Withdrawn
- 2002-12-23 CN CNA028276728A patent/CN1636267A/zh active Pending
- 2002-12-23 AU AU2002358291A patent/AU2002358291A1/en not_active Abandoned
- 2002-12-23 EP EP02792530A patent/EP1456868A2/en not_active Withdrawn
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100709590B1 (ko) * | 2006-01-04 | 2007-04-20 | (주)소슬 | 클러스터형 베벨에치장치 |
| KR100801711B1 (ko) * | 2007-02-27 | 2008-02-11 | 삼성전자주식회사 | 반도체 식각 및 증착 공정들을 수행하는 반도체 제조장비들 및 그를 이용한 반도체 소자의 형성방법들 |
| US8197637B2 (en) | 2007-02-27 | 2012-06-12 | Samsung Electronics Co., Ltd. | Semiconductor fabrication apparatuses to perform semiconductor etching and deposition processes and methods of forming semiconductor device using the same |
| US8652342B2 (en) | 2007-02-27 | 2014-02-18 | Samsung Electronics Co., Ltd | Semiconductor fabrication apparatuses to perform semiconductor etching and deposition processes and methods of forming semiconductor device using the same |
Also Published As
| Publication number | Publication date |
|---|---|
| TW594874B (en) | 2004-06-21 |
| CN1636267A (zh) | 2005-07-06 |
| AU2002358291A8 (en) | 2003-07-30 |
| US20030141201A1 (en) | 2003-07-31 |
| TW200301520A (en) | 2003-07-01 |
| EP1456868A2 (en) | 2004-09-15 |
| JP2005515629A (ja) | 2005-05-26 |
| WO2003060963A2 (en) | 2003-07-24 |
| US7029567B2 (en) | 2006-04-18 |
| WO2003060963A3 (en) | 2004-04-22 |
| AU2002358291A1 (en) | 2003-07-30 |
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