JP2005515629A - 電気化学エッジおよびべベル洗浄方法およびシステム - Google Patents

電気化学エッジおよびべベル洗浄方法およびシステム Download PDF

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Publication number
JP2005515629A
JP2005515629A JP2003560965A JP2003560965A JP2005515629A JP 2005515629 A JP2005515629 A JP 2005515629A JP 2003560965 A JP2003560965 A JP 2003560965A JP 2003560965 A JP2003560965 A JP 2003560965A JP 2005515629 A JP2005515629 A JP 2005515629A
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Prior art keywords
workpiece
edge
directing
wafer
chamber
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JP2003560965A
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English (en)
Japanese (ja)
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JP2005515629A5 (enExample
Inventor
バソル、ブレント・エム
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ナトゥール・インコーポレイテッド
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Priority claimed from US10/032,318 external-priority patent/US6833063B2/en
Application filed by ナトゥール・インコーポレイテッド filed Critical ナトゥール・インコーポレイテッド
Publication of JP2005515629A publication Critical patent/JP2005515629A/ja
Publication of JP2005515629A5 publication Critical patent/JP2005515629A5/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00—Electrolytic etching or polishing
    • C25F3/02—Etching
    • C25F3/14—Etching locally
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F7/00—Constructional parts, or assemblies thereof, of cells for electrolytic removal of material from objects; Servicing or operating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063—Electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Weting (AREA)
JP2003560965A 2001-12-21 2002-12-23 電気化学エッジおよびべベル洗浄方法およびシステム Withdrawn JP2005515629A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/032,318 US6833063B2 (en) 2001-12-21 2001-12-21 Electrochemical edge and bevel cleaning process and system
US42493602P 2002-11-08 2002-11-08
PCT/US2002/041415 WO2003060963A2 (en) 2001-12-21 2002-12-23 Electrochemical edge and bevel cleaning process and system

Publications (2)

Publication Number Publication Date
JP2005515629A true JP2005515629A (ja) 2005-05-26
JP2005515629A5 JP2005515629A5 (enExample) 2005-12-22

Family

ID=26708251

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003560965A Withdrawn JP2005515629A (ja) 2001-12-21 2002-12-23 電気化学エッジおよびべベル洗浄方法およびシステム

Country Status (8)

Country Link
US (1) US7029567B2 (enExample)
EP (1) EP1456868A2 (enExample)
JP (1) JP2005515629A (enExample)
KR (1) KR20040103911A (enExample)
CN (1) CN1636267A (enExample)
AU (1) AU2002358291A1 (enExample)
TW (1) TW594874B (enExample)
WO (1) WO2003060963A2 (enExample)

Cited By (1)

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JP2023008390A (ja) * 2021-07-06 2023-01-19 東京エレクトロン株式会社 基板処理装置および基板処理方法

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US7686935B2 (en) * 1998-10-26 2010-03-30 Novellus Systems, Inc. Pad-assisted electropolishing
US7780867B1 (en) * 1999-10-01 2010-08-24 Novellus Systems, Inc. Edge bevel removal of copper from silicon wafers
DE10128507B4 (de) * 2001-06-14 2008-07-17 Mtu Aero Engines Gmbh Verwendung einer Vorrichtung zum chemischen oder elektrochemischen Bearbeiten von Bauteilen
EP1473387A1 (de) * 2003-05-02 2004-11-03 Siemens Aktiengesellschaft Verfahren zur Entschichtung eines Bauteils
US9236279B2 (en) * 2003-06-27 2016-01-12 Lam Research Corporation Method of dielectric film treatment
US20050037620A1 (en) * 2003-08-15 2005-02-17 Berman Michael J. Method for achieving wafer contact for electro-processing
US7648622B2 (en) * 2004-02-27 2010-01-19 Novellus Systems, Inc. System and method for electrochemical mechanical polishing
US7998335B2 (en) * 2005-06-13 2011-08-16 Cabot Microelectronics Corporation Controlled electrochemical polishing method
US20090266707A1 (en) * 2005-08-26 2009-10-29 Novellus Systems, Inc. Pad-assisted electropolishing
KR100709590B1 (ko) * 2006-01-04 2007-04-20 (주)소슬 클러스터형 베벨에치장치
US8100081B1 (en) 2006-06-30 2012-01-24 Novellus Systems, Inc. Edge removal of films using externally generated plasma species
KR100801711B1 (ko) * 2007-02-27 2008-02-11 삼성전자주식회사 반도체 식각 및 증착 공정들을 수행하는 반도체 제조장비들 및 그를 이용한 반도체 소자의 형성방법들
US9732416B1 (en) 2007-04-18 2017-08-15 Novellus Systems, Inc. Wafer chuck with aerodynamic design for turbulence reduction
US8192822B2 (en) * 2008-03-31 2012-06-05 Memc Electronic Materials, Inc. Edge etched silicon wafers
US8419964B2 (en) 2008-08-27 2013-04-16 Novellus Systems, Inc. Apparatus and method for edge bevel removal of copper from silicon wafers
US8414790B2 (en) * 2008-11-13 2013-04-09 Lam Research Corporation Bevel plasma treatment to enhance wet edge clean
KR20110099108A (ko) * 2008-11-19 2011-09-06 엠이엠씨 일렉트로닉 머티리얼즈, 인크. 반도체 웨이퍼의 에지를 스트리핑하기 위한 방법 및 시스템
US8172646B2 (en) * 2009-02-27 2012-05-08 Novellus Systems, Inc. Magnetically actuated chuck for edge bevel removal
KR101198412B1 (ko) * 2009-12-30 2012-11-07 삼성전기주식회사 기판도금장치 및 기판도금방법
US8853054B2 (en) 2012-03-06 2014-10-07 Sunedison Semiconductor Limited Method of manufacturing silicon-on-insulator wafers
CN102623323A (zh) * 2012-04-01 2012-08-01 南通富士通微电子股份有限公司 半导体圆片喷液蚀刻系统及方法
CN103021937B (zh) * 2013-01-09 2015-07-08 华进半导体封装先导技术研发中心有限公司 化学腐蚀硅通孔面过电镀铜层的装置及方法
SG11201508466QA (en) * 2013-05-09 2015-11-27 Acm Research Shanghai Inc Apparatus and method for plating and/or polishing wafer
CN105088328B (zh) * 2014-05-07 2018-11-06 盛美半导体设备（上海）有限公司 电化学抛光供液装置
CN106206236B (zh) * 2016-08-30 2018-05-04 上海华力微电子有限公司 刻蚀设备以及用于去除晶背边缘薄膜的晶背边缘刻蚀方法
SG11202006936RA (en) * 2018-02-01 2020-08-28 Applied Materials Inc Cleaning components and methods in a plating system
DE102018111858A1 (de) * 2018-05-17 2019-11-21 Nexwafe Gmbh Vorrichtung und Verfahren zum einseitigen Ätzen einer Halbleiterschicht eines Werkstücks
CN110867449B (zh) * 2019-11-12 2021-09-07 长江存储科技有限责任公司 三维存储器及其制备方法
KR20220107012A (ko) * 2019-11-27 2022-08-01 램 리써치 코포레이션 쓰루-레지스트 (through-resist) 도금을 위한 에지 제거
JP7475945B2 (ja) * 2020-04-20 2024-04-30 東京エレクトロン株式会社 基板処理装置および基板処理方法
KR20220130663A (ko) * 2021-03-17 2022-09-27 가부시키가이샤 에바라 세이사꾸쇼 도금 장치 및 도금 장치의 콘택트 부재 세정 방법
WO2023079634A1 (ja) * 2021-11-04 2023-05-11 株式会社荏原製作所 めっき装置および基板洗浄方法
CN114855257B (zh) * 2022-04-20 2024-06-25 湖南华翔医疗科技有限公司 金属膜材的边缘抛光方法及金属膜材和应用

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Publication number Priority date Publication date Assignee Title
JP2023008390A (ja) * 2021-07-06 2023-01-19 東京エレクトロン株式会社 基板処理装置および基板処理方法
JP7696241B2 (ja) 2021-07-06 2025-06-20 東京エレクトロン株式会社 基板処理装置および基板処理方法

Also Published As

Publication number Publication date
TW594874B (en) 2004-06-21
CN1636267A (zh) 2005-07-06
AU2002358291A8 (en) 2003-07-30
US20030141201A1 (en) 2003-07-31
TW200301520A (en) 2003-07-01
EP1456868A2 (en) 2004-09-15
KR20040103911A (ko) 2004-12-09
WO2003060963A2 (en) 2003-07-24
US7029567B2 (en) 2006-04-18
WO2003060963A3 (en) 2004-04-22
AU2002358291A1 (en) 2003-07-30

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