KR20040094773A - 게이트 유전체의 개질된 표면을 갖는 유기 박막트랜지스터 - Google Patents
게이트 유전체의 개질된 표면을 갖는 유기 박막트랜지스터 Download PDFInfo
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- KR20040094773A KR20040094773A KR10-2004-7013924A KR20047013924A KR20040094773A KR 20040094773 A KR20040094773 A KR 20040094773A KR 20047013924 A KR20047013924 A KR 20047013924A KR 20040094773 A KR20040094773 A KR 20040094773A
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- South Korea
- Prior art keywords
- thin film
- film transistor
- organic thin
- substituted
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- 239000010409 thin film Substances 0.000 title claims abstract description 49
- 239000004065 semiconductor Substances 0.000 claims abstract description 56
- 239000010410 layer Substances 0.000 claims abstract description 53
- 239000002243 precursor Substances 0.000 claims abstract description 44
- 239000013545 self-assembled monolayer Substances 0.000 claims abstract description 42
- 239000002094 self assembled monolayer Substances 0.000 claims abstract description 37
- 239000000463 material Substances 0.000 claims abstract description 31
- 239000002356 single layer Substances 0.000 claims abstract description 30
- 229920003026 Acene Polymers 0.000 claims abstract description 22
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical group C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 claims abstract description 22
- 125000005843 halogen group Chemical group 0.000 claims abstract description 14
- 125000005605 benzo group Chemical group 0.000 claims abstract description 10
- 239000007795 chemical reaction product Substances 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims description 48
- -1 benzotriazolylcarbonyloxy Chemical group 0.000 claims description 44
- 238000000034 method Methods 0.000 claims description 35
- 125000000217 alkyl group Chemical group 0.000 claims description 24
- 125000003545 alkoxy group Chemical group 0.000 claims description 18
- 125000003118 aryl group Chemical group 0.000 claims description 16
- 125000004432 carbon atom Chemical group C* 0.000 claims description 15
- 125000001931 aliphatic group Chemical group 0.000 claims description 14
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 13
- 239000002800 charge carrier Substances 0.000 claims description 11
- 229910052739 hydrogen Inorganic materials 0.000 claims description 11
- 239000001257 hydrogen Substances 0.000 claims description 11
- 150000002964 pentacenes Chemical class 0.000 claims description 11
- 125000005647 linker group Chemical group 0.000 claims description 10
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- RJFAQKFYZBVTSH-UHFFFAOYSA-N 2,9-dimethylpentacene Chemical compound C1=C(C)C=CC2=CC3=CC4=CC5=CC(C)=CC=C5C=C4C=C3C=C21 RJFAQKFYZBVTSH-UHFFFAOYSA-N 0.000 claims description 6
- ISKXWVTWFWNJCL-UHFFFAOYSA-N 3,7,11,15-tetramethylhexadecylphosphonic acid Chemical compound CC(C)CCCC(C)CCCC(C)CCCC(C)CCP(O)(O)=O ISKXWVTWFWNJCL-UHFFFAOYSA-N 0.000 claims description 6
- 239000007772 electrode material Substances 0.000 claims description 6
- 125000003354 benzotriazolyl group Chemical group N1N=NC2=C1C=CC=C2* 0.000 claims description 5
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 5
- 230000000052 comparative effect Effects 0.000 claims description 5
- 125000005328 phosphinyl group Chemical group [PH2](=O)* 0.000 claims description 5
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 claims description 5
- 125000005309 thioalkoxy group Chemical group 0.000 claims description 5
- JGJWRGCEYNJFQJ-UHFFFAOYSA-N 2,3,6,7-tetramethylanthracene Chemical compound CC1=C(C)C=C2C=C(C=C(C(C)=C3)C)C3=CC2=C1 JGJWRGCEYNJFQJ-UHFFFAOYSA-N 0.000 claims description 4
- OGVRJXPGSVLDRD-UHFFFAOYSA-N 2,3-dimethylanthracene Chemical compound C1=CC=C2C=C(C=C(C(C)=C3)C)C3=CC2=C1 OGVRJXPGSVLDRD-UHFFFAOYSA-N 0.000 claims description 4
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- XBDYBAVJXHJMNQ-UHFFFAOYSA-N Tetrahydroanthracene Natural products C1=CC=C2C=C(CCCC3)C3=CC2=C1 XBDYBAVJXHJMNQ-UHFFFAOYSA-N 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 4
- JDPSFRXPDJVJMV-UHFFFAOYSA-N hexadecylphosphonic acid Chemical compound CCCCCCCCCCCCCCCCP(O)(O)=O JDPSFRXPDJVJMV-UHFFFAOYSA-N 0.000 claims description 4
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 4
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- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 claims description 3
- IFLREYGFSNHWGE-UHFFFAOYSA-N tetracene Chemical compound C1=CC=CC2=CC3=CC4=CC=CC=C4C=C3C=C21 IFLREYGFSNHWGE-UHFFFAOYSA-N 0.000 claims description 3
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- PLPFBVXTEJUIIT-UHFFFAOYSA-N 1,2-dimethylanthracene Chemical compound C1=CC=CC2=CC3=C(C)C(C)=CC=C3C=C21 PLPFBVXTEJUIIT-UHFFFAOYSA-N 0.000 claims description 2
- CJIHLTIPPMOUBX-UHFFFAOYSA-N 1,9-diethylpentacene Chemical compound CCC1=CC=CC2=CC3=CC4=CC5=CC(CC)=CC=C5C=C4C=C3C=C21 CJIHLTIPPMOUBX-UHFFFAOYSA-N 0.000 claims description 2
- KZNJSFHJUQDYHE-UHFFFAOYSA-N 1-methylanthracene Chemical group C1=CC=C2C=C3C(C)=CC=CC3=CC2=C1 KZNJSFHJUQDYHE-UHFFFAOYSA-N 0.000 claims description 2
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- OBUZJMJUAVMAHQ-UHFFFAOYSA-N 2,3-dimethyltetracene Chemical compound C1=CC=C2C=C(C=C3C(C=C(C(=C3)C)C)=C3)C3=CC2=C1 OBUZJMJUAVMAHQ-UHFFFAOYSA-N 0.000 claims description 2
- ADXBZBYVZGICAA-UHFFFAOYSA-N 2,6-diethylanthracene Chemical compound C1=C(CC)C=CC2=CC3=CC(CC)=CC=C3C=C21 ADXBZBYVZGICAA-UHFFFAOYSA-N 0.000 claims description 2
- LXGXXKMUUILTQW-UHFFFAOYSA-N 2,6-dihexylanthracene Chemical compound C1=C(CCCCCC)C=CC2=CC3=CC(CCCCCC)=CC=C3C=C21 LXGXXKMUUILTQW-UHFFFAOYSA-N 0.000 claims description 2
- JMZTYTHIKBZDRR-UHFFFAOYSA-N 2,8-dimethyltetracene Chemical compound C1=C(C)C=CC2=CC3=CC4=CC(C)=CC=C4C=C3C=C21 JMZTYTHIKBZDRR-UHFFFAOYSA-N 0.000 claims description 2
- LUIIFECCWPHFCL-UHFFFAOYSA-N 2,9-diethylpentacene Chemical compound C1=C(CC)C=CC2=CC3=CC4=CC5=CC(CC)=CC=C5C=C4C=C3C=C21 LUIIFECCWPHFCL-UHFFFAOYSA-N 0.000 claims description 2
- ZXAGXLDEMUNQSH-UHFFFAOYSA-N 2-ethylanthracene Chemical compound C1=CC=CC2=CC3=CC(CC)=CC=C3C=C21 ZXAGXLDEMUNQSH-UHFFFAOYSA-N 0.000 claims description 2
- JJIHLWVGNTVXOH-UHFFFAOYSA-N 2-ethylpentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC(CC)=CC=C5C=C4C=C3C=C21 JJIHLWVGNTVXOH-UHFFFAOYSA-N 0.000 claims description 2
- PHJDLOLHDMITST-UHFFFAOYSA-N 2-hexylanthracene Chemical compound C1=CC=CC2=CC3=CC(CCCCCC)=CC=C3C=C21 PHJDLOLHDMITST-UHFFFAOYSA-N 0.000 claims description 2
- RDJVLXANSXIKDF-UHFFFAOYSA-N 2-hexyltetracene Chemical compound C1=CC=CC2=CC3=CC4=CC(CCCCCC)=CC=C4C=C3C=C21 RDJVLXANSXIKDF-UHFFFAOYSA-N 0.000 claims description 2
- 125000003229 2-methylhexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 claims description 2
- BMUCNGZONIVELY-UHFFFAOYSA-N 2-methylpentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC(C)=CC=C5C=C4C=C3C=C21 BMUCNGZONIVELY-UHFFFAOYSA-N 0.000 claims description 2
- XQXNQXKPOBNVNJ-UHFFFAOYSA-N 2-nonyltetracene Chemical compound C1=CC=CC2=CC3=CC4=CC(CCCCCCCCC)=CC=C4C=C3C=C21 XQXNQXKPOBNVNJ-UHFFFAOYSA-N 0.000 claims description 2
- 150000001454 anthracenes Chemical class 0.000 claims description 2
- DMDCUCGTRMTDIR-UHFFFAOYSA-N dibenzo[de,st]pentacene Chemical compound C=12C3=CC=CC2=CC=CC=1C1=CC=CC2=C1C3=CC1=CC3=CC=CC=C3C=C21 DMDCUCGTRMTDIR-UHFFFAOYSA-N 0.000 claims description 2
- JQUQARYITFQBHD-UHFFFAOYSA-N dibenzo[de,uv]pentacene Chemical compound C1=CC=C2C3=CC4=CC5=CC=CC=C5C=C4C=C3C3=CC=CC4=CC=C1C2=C34 JQUQARYITFQBHD-UHFFFAOYSA-N 0.000 claims description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 2
- GJWAEWLHSDGBGG-UHFFFAOYSA-N hexylphosphonic acid Chemical group CCCCCCP(O)(O)=O GJWAEWLHSDGBGG-UHFFFAOYSA-N 0.000 claims description 2
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 claims description 2
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 claims description 2
- 125000003136 n-heptyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 claims description 2
- 125000000740 n-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 claims description 2
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 claims description 2
- NJGCRMAPOWGWMW-UHFFFAOYSA-N octylphosphonic acid Chemical compound CCCCCCCCP(O)(O)=O NJGCRMAPOWGWMW-UHFFFAOYSA-N 0.000 claims description 2
- NTSOYDKTPXNADZ-UHFFFAOYSA-N 1,2,3,4,8,9,10,11-octamethylpentacene Chemical compound CC1=C(C)C(C)=C(C)C2=CC3=CC4=CC5=C(C)C(C)=C(C)C(C)=C5C=C4C=C3C=C21 NTSOYDKTPXNADZ-UHFFFAOYSA-N 0.000 claims 1
- XZSJEVHEEKPVNV-UHFFFAOYSA-N 1,4,8,11-tetramethoxypentacene Chemical compound C1=CC(OC)=C2C=C(C=C3C(C=C4C(OC)=CC=C(C4=C3)OC)=C3)C3=CC2=C1OC XZSJEVHEEKPVNV-UHFFFAOYSA-N 0.000 claims 1
- CBQIYHAETDIKQH-UHFFFAOYSA-N 2,10-dimethoxypentacene Chemical compound C1=CC(OC)=CC2=CC3=CC4=CC5=CC(OC)=CC=C5C=C4C=C3C=C21 CBQIYHAETDIKQH-UHFFFAOYSA-N 0.000 claims 1
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- 125000001424 substituent group Chemical group 0.000 description 7
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- ZJMWRROPUADPEA-UHFFFAOYSA-N sec-butylbenzene Chemical compound CCC(C)C1=CC=CC=C1 ZJMWRROPUADPEA-UHFFFAOYSA-N 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 238000000096 single-wavelength ellipsometry Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- HIFJUMGIHIZEPX-UHFFFAOYSA-N sulfuric acid;sulfur trioxide Chemical compound O=S(=O)=O.OS(O)(=O)=O HIFJUMGIHIZEPX-UHFFFAOYSA-N 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- ZWPWUVNMFVVHHE-UHFFFAOYSA-N terephthalic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C=C1.OC(=O)C1=CC=C(C(O)=O)C=C1 ZWPWUVNMFVVHHE-UHFFFAOYSA-N 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- RQBFBRABPQPCHC-UHFFFAOYSA-N tetrabenz(a,c,h,j)anthracene Chemical compound C1=CC=CC2=C(C=C3C4=CC=CC=C4C=4C(=CC=CC=4)C3=C3)C3=C(C=CC=C3)C3=C21 RQBFBRABPQPCHC-UHFFFAOYSA-N 0.000 description 1
- DVZSPMMHSDQQLV-UHFFFAOYSA-N tetrabenzo(a,c,j,l)naphthacene Chemical compound C1=CC=CC2=C(C=C3C(C=C4C5=CC=CC=C5C=5C(C4=C3)=CC=CC=5)=C3)C3=C(C=CC=C3)C3=C21 DVZSPMMHSDQQLV-UHFFFAOYSA-N 0.000 description 1
- RIQXSPGGOGYAPV-UHFFFAOYSA-N tetrabenzo(a,c,l,o)pentacene Chemical compound C1=CC=CC2=C(C=C3C(C=C4C=C5C6=CC=CC=C6C=6C(C5=CC4=C3)=CC=CC=6)=C3)C3=C(C=CC=C3)C3=C21 RIQXSPGGOGYAPV-UHFFFAOYSA-N 0.000 description 1
- LZPBKINTWROMEA-UHFFFAOYSA-N tetracene-5,12-dione Chemical class C1=CC=C2C=C3C(=O)C4=CC=CC=C4C(=O)C3=CC2=C1 LZPBKINTWROMEA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- SSUTVLAUGWQSDG-UHFFFAOYSA-N tribenzo(a,c,j)naphthacene Chemical compound C1=CC=CC2=C(C=C3C(C=C4C=CC=5C(C4=C3)=CC=CC=5)=C3)C3=C(C=CC=C3)C3=C21 SSUTVLAUGWQSDG-UHFFFAOYSA-N 0.000 description 1
- IMNIMPAHZVJRPE-UHFFFAOYSA-N triethylenediamine Chemical compound C1CN2CCN1CC2 IMNIMPAHZVJRPE-UHFFFAOYSA-N 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
- UXUXNGMSDNTZEC-UHFFFAOYSA-N zethrene Chemical compound C1=CC(C=2C(C=3C=CC=C4C=CC=C(C=2)C4=3)=C2)=C3C2=CC=CC3=C1 UXUXNGMSDNTZEC-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
- H10K10/474—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a multilayered structure
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
- H10K85/623—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene containing five rings, e.g. pentacene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/901—Printed circuit
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Composite Materials (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/094,007 US6768132B2 (en) | 2002-03-07 | 2002-03-07 | Surface modified organic thin film transistors |
| US10/094,007 | 2002-03-07 | ||
| PCT/US2003/003905 WO2003077327A1 (en) | 2002-03-07 | 2003-02-11 | Organic thin film transistors with modified surface of gate-dielectric |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20040094773A true KR20040094773A (ko) | 2004-11-10 |
Family
ID=27804239
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR10-2004-7013924A Ceased KR20040094773A (ko) | 2002-03-07 | 2003-02-11 | 게이트 유전체의 개질된 표면을 갖는 유기 박막트랜지스터 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US6768132B2 (https=) |
| EP (1) | EP1481428A1 (https=) |
| JP (1) | JP4589004B2 (https=) |
| KR (1) | KR20040094773A (https=) |
| CN (1) | CN100456518C (https=) |
| AU (1) | AU2003209087A1 (https=) |
| TW (1) | TWI278133B (https=) |
| WO (1) | WO2003077327A1 (https=) |
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| US6946676B2 (en) * | 2001-11-05 | 2005-09-20 | 3M Innovative Properties Company | Organic thin film transistor with polymeric interface |
| US7285440B2 (en) * | 2002-11-25 | 2007-10-23 | International Business Machines Corporation | Organic underlayers that improve the performance of organic semiconductors |
| US7088145B2 (en) * | 2002-12-23 | 2006-08-08 | 3M Innovative Properties Company | AC powered logic circuitry |
| EP1609191A1 (en) * | 2003-03-31 | 2005-12-28 | Canon Kabushiki Kaisha | Organic thin film transistor and manufacturing method thereof |
| US6858527B2 (en) * | 2003-04-14 | 2005-02-22 | Intel Corporation | Method to increase electromigration resistance of copper using self-assembled organic thiolate monolayers |
| DE10328811B4 (de) * | 2003-06-20 | 2005-12-29 | Infineon Technologies Ag | Verbindung zur Bildung einer selbstorganisierenden Monolage, Schichtstruktur, Halbleiterbauelement mit einer Schichtstruktur und Verfahren zur Herstellung einer Schichtstruktur |
| KR100995451B1 (ko) * | 2003-07-03 | 2010-11-18 | 삼성전자주식회사 | 다층 구조의 게이트 절연막을 포함하는 유기 박막 트랜지스터 |
| US6969634B2 (en) * | 2003-09-24 | 2005-11-29 | Lucent Technologies Inc. | Semiconductor layers with roughness patterning |
| US7122828B2 (en) * | 2003-09-24 | 2006-10-17 | Lucent Technologies, Inc. | Semiconductor devices having regions of induced high and low conductivity, and methods of making the same |
| US8450723B2 (en) | 2003-11-04 | 2013-05-28 | Alcatel Lucent | Apparatus having an aromatic dielectric and an aromatic organic semiconductor including an alkyl chain |
| US7115900B2 (en) * | 2003-11-26 | 2006-10-03 | Lucent Technologies Inc. | Devices having patterned regions of polycrystalline organic semiconductors, and methods of making the same |
| US7078937B2 (en) * | 2003-12-17 | 2006-07-18 | 3M Innovative Properties Company | Logic circuitry powered by partially rectified ac waveform |
| JP4661065B2 (ja) * | 2004-03-22 | 2011-03-30 | セイコーエプソン株式会社 | 相補型有機半導体装置 |
| DE102004025423B4 (de) * | 2004-05-24 | 2008-03-06 | Qimonda Ag | Dünnfilm-Feldeffekt-Transistor mit Gate-Dielektrikum aus organischem Material und Verfahren zu dessen Herstellung |
| WO2005122293A2 (en) * | 2004-06-08 | 2005-12-22 | Princeton University | Formation of ordered thin films of organics on metal oxide surfaces |
| US7374984B2 (en) * | 2004-10-29 | 2008-05-20 | Randy Hoffman | Method of forming a thin film component |
| US7315042B2 (en) * | 2004-11-18 | 2008-01-01 | 3M Innovative Properties Company | Semiconductors containing trans-1,2-bis(acenyl)ethylene compounds |
| US20060105199A1 (en) * | 2004-11-18 | 2006-05-18 | 3M Innovative Properties Company | Electroluminescent devices containing trans-1,2-bis(acenyl)ethylene compounds |
| US20060142520A1 (en) * | 2004-12-27 | 2006-06-29 | 3M Innovative Properties Company | Hole transport layers for organic electroluminescent devices |
| KR100637210B1 (ko) * | 2005-01-28 | 2006-10-23 | 삼성에스디아이 주식회사 | 박막 트랜지스터, 이의 제조 방법 및 이를 구비한 평판표시 장치 |
| US7619242B2 (en) * | 2005-02-25 | 2009-11-17 | Xerox Corporation | Celluloses and devices thereof |
| CN101687385A (zh) * | 2005-05-12 | 2010-03-31 | 佐治亚科技研究公司 | 包覆的金属氧化物纳米颗粒及其制备方法 |
| KR100708720B1 (ko) * | 2005-10-19 | 2007-04-17 | 삼성에스디아이 주식회사 | 유기 박막 트랜지스터, 이의 제조 방법 및 이를 구비한평판 표시 장치 |
| US8414962B2 (en) | 2005-10-28 | 2013-04-09 | The Penn State Research Foundation | Microcontact printed thin film capacitors |
| KR20070053060A (ko) | 2005-11-19 | 2007-05-23 | 삼성전자주식회사 | 표시장치와 이의 제조방법 |
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| US20070145359A1 (en) * | 2005-12-07 | 2007-06-28 | Chi Ming Che | Materials for organic thin film transistors |
| JP2007266355A (ja) * | 2006-03-29 | 2007-10-11 | Brother Ind Ltd | 有機トランジスタ及び有機トランジスタの製造方法 |
| CN100590904C (zh) * | 2006-06-06 | 2010-02-17 | 中华映管股份有限公司 | 图案化制程及应用此制程的有机薄膜晶体管的制作方法 |
| KR101151159B1 (ko) | 2006-09-19 | 2012-06-01 | 삼성전자주식회사 | 포스페이트계 자기조립단분자막을 포함하는 유기 박막트랜지스터 및 그 제조방법 |
| US8405069B2 (en) * | 2006-11-10 | 2013-03-26 | Georgia Tech Research Corporation | Printable thin-film transistors with high dielectric constant gate insulators and methods for producing same |
| US7892454B2 (en) * | 2006-11-17 | 2011-02-22 | Polyera Corporation | Acene-based organic semiconductor materials and methods of preparing and using the same |
| JP5209996B2 (ja) | 2007-03-23 | 2013-06-12 | 山本化成株式会社 | 有機トランジスタ |
| TWI355106B (en) | 2007-05-07 | 2011-12-21 | Chunghwa Picture Tubes Ltd | Organic photodetector and fabricating method of or |
| JP5153227B2 (ja) * | 2007-06-26 | 2013-02-27 | キヤノン株式会社 | 有機発光素子 |
| US7891636B2 (en) * | 2007-08-27 | 2011-02-22 | 3M Innovative Properties Company | Silicone mold and use thereof |
| JP5291321B2 (ja) * | 2007-10-24 | 2013-09-18 | 旭化成株式会社 | 有機半導体薄膜及び有機半導体素子 |
| JP5396709B2 (ja) * | 2007-12-11 | 2014-01-22 | セイコーエプソン株式会社 | 薄膜トランジスタ、電気光学装置および電子機器 |
| JP5329816B2 (ja) * | 2008-01-25 | 2013-10-30 | 旭化成株式会社 | 有機半導体層を有する新規光電界効果トランジスタ |
| KR101176397B1 (ko) | 2008-03-10 | 2012-08-27 | 야마모토카세이 카부시키카이샤 | 유기 트랜지스터 |
| US8119445B2 (en) * | 2008-05-27 | 2012-02-21 | The Board Of Trustees Of The Leland Stanford Junior University | Organic semiconductors and growth approaches therefor |
| JP5334465B2 (ja) * | 2008-06-17 | 2013-11-06 | 山本化成株式会社 | 有機トランジスタ |
| WO2011074232A1 (ja) * | 2009-12-14 | 2011-06-23 | 出光興産株式会社 | 多環縮環化合物、及び、それを用いた有機薄膜トランジスタ |
| JP2012067051A (ja) * | 2010-09-27 | 2012-04-05 | Idemitsu Kosan Co Ltd | 有機薄膜トランジスタ用化合物及びそれを用いた有機薄膜トランジスタ |
| EP2500009A1 (en) | 2011-03-17 | 2012-09-19 | 3M Innovative Properties Company | Dental ceramic article, process of production and use thereof |
| WO2013069366A1 (ja) * | 2011-11-10 | 2013-05-16 | 富士電機株式会社 | 有機薄膜トランジスタ及びその製造方法 |
| CN102507659B (zh) * | 2011-11-28 | 2013-11-13 | 电子科技大学 | 基于有机薄膜晶体管的甲醛气体传感器及其制备方法 |
| JP5921359B2 (ja) * | 2012-06-22 | 2016-05-24 | 公立大学法人兵庫県立大学 | テトラベンゾテトラセン誘導体、その合成方法およびその用途 |
| CN103045232B (zh) * | 2012-10-18 | 2014-07-23 | 吉林奥来德光电材料股份有限公司 | 二氢并五苯烯烃类有机发光材料及其制备方法和应用 |
| KR102038124B1 (ko) * | 2016-06-27 | 2019-10-29 | 숭실대학교산학협력단 | 유기 반도체 소자의 제조 방법 |
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| GB680343A (en) | 1949-07-25 | 1952-10-01 | C D Patents Ltd | Improvements in or relating to the manufacture of synthetic resins from aromatic substituted olefinic hydrocarbons |
| JPS6058467B2 (ja) | 1977-10-22 | 1985-12-20 | 株式会社リコー | 電子写真用感光体 |
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| US5079179A (en) | 1987-10-09 | 1992-01-07 | Hughes Aircraft Company | Process of making GaAs electrical circuit devices with Langmuir-Blodgett insulator layer |
| EP0344111A3 (de) | 1988-05-27 | 1990-04-04 | Ciba-Geigy Ag | Substituierte Tetrathio- und Tetraselenotetracene |
| FR2664430B1 (fr) | 1990-07-04 | 1992-09-18 | Centre Nat Rech Scient | Transistor a effet de champ en couche mince de structure mis, dont l'isolant et le semiconducteur sont realises en materiaux organiques. |
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| US5965679A (en) | 1996-09-10 | 1999-10-12 | The Dow Chemical Company | Polyphenylene oligomers and polymers |
| DE19815220C2 (de) | 1998-03-27 | 2003-12-18 | Univ Dresden Tech | Verfahren zur haftfesten und dichten chemischen oder galvanischen Metallisierung von Substraten sowie Haftvermittler zur Durchführung des Verfahrens |
| JP3102414B2 (ja) | 1998-06-08 | 2000-10-23 | 日本電気株式会社 | 有機エレクトロルミネッセンス素子 |
| EP1093663A2 (en) | 1998-06-19 | 2001-04-25 | Thin Film Electronics ASA | Integrated inorganic/organic complementary thin-film transistor circuit |
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| US6252245B1 (en) | 1999-03-29 | 2001-06-26 | Howard Edan Katz | Device comprising n-channel semiconductor material |
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| NO312867B1 (no) | 1999-06-30 | 2002-07-08 | Penn State Res Found | Anordning til elektrisk kontaktering eller isolering av organiske eller uorganiske halvledere, samt fremgangsmåte til densfremstilling |
| JP2001244467A (ja) * | 2000-02-28 | 2001-09-07 | Hitachi Ltd | コプラナー型半導体装置とそれを用いた表示装置および製法 |
| ATE540913T1 (de) * | 2000-02-29 | 2012-01-15 | Japan Science & Tech Agency | Polyacen-derivate und ihre produktion |
| US6433359B1 (en) * | 2001-09-06 | 2002-08-13 | 3M Innovative Properties Company | Surface modifying layers for organic thin film transistors |
| US20030097010A1 (en) * | 2001-09-27 | 2003-05-22 | Vogel Dennis E. | Process for preparing pentacene derivatives |
-
2002
- 2002-03-07 US US10/094,007 patent/US6768132B2/en not_active Expired - Fee Related
-
2003
- 2003-02-11 KR KR10-2004-7013924A patent/KR20040094773A/ko not_active Ceased
- 2003-02-11 EP EP03707815A patent/EP1481428A1/en not_active Withdrawn
- 2003-02-11 CN CNB038053217A patent/CN100456518C/zh not_active Expired - Fee Related
- 2003-02-11 WO PCT/US2003/003905 patent/WO2003077327A1/en not_active Ceased
- 2003-02-11 JP JP2003575431A patent/JP4589004B2/ja not_active Expired - Fee Related
- 2003-02-11 AU AU2003209087A patent/AU2003209087A1/en not_active Abandoned
- 2003-02-25 TW TW092103916A patent/TWI278133B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| US20030175551A1 (en) | 2003-09-18 |
| JP2005519486A (ja) | 2005-06-30 |
| CN100456518C (zh) | 2009-01-28 |
| US6768132B2 (en) | 2004-07-27 |
| CN1639884A (zh) | 2005-07-13 |
| AU2003209087A1 (en) | 2003-09-22 |
| WO2003077327A1 (en) | 2003-09-18 |
| TW200306027A (en) | 2003-11-01 |
| TWI278133B (en) | 2007-04-01 |
| EP1481428A1 (en) | 2004-12-01 |
| JP4589004B2 (ja) | 2010-12-01 |
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