KR20040064191A - 적층박막전주가공물과 그 제작방법. - Google Patents

적층박막전주가공물과 그 제작방법. Download PDF

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Publication number
KR20040064191A
KR20040064191A KR1020030002231A KR20030002231A KR20040064191A KR 20040064191 A KR20040064191 A KR 20040064191A KR 1020030002231 A KR1020030002231 A KR 1020030002231A KR 20030002231 A KR20030002231 A KR 20030002231A KR 20040064191 A KR20040064191 A KR 20040064191A
Authority
KR
South Korea
Prior art keywords
exposure
electroformed
thin film
base
workpiece
Prior art date
Application number
KR1020030002231A
Other languages
English (en)
Korean (ko)
Inventor
김정식
Original Assignee
김정식
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김정식 filed Critical 김정식
Priority to KR1020030002231A priority Critical patent/KR20040064191A/ko
Priority to PCT/KR2003/002804 priority patent/WO2004064155A1/fr
Priority to AU2003289514A priority patent/AU2003289514A1/en
Priority to AU2003289537A priority patent/AU2003289537A1/en
Priority to PCT/KR2003/002856 priority patent/WO2004064156A1/fr
Priority to PCT/KR2004/000021 priority patent/WO2004064135A1/fr
Publication of KR20040064191A publication Critical patent/KR20040064191A/ko

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D1/00—Electroforming
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D1/00—Electroforming
    • C25D1/10—Moulds; Masks; Masterforms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Moulds For Moulding Plastics Or The Like (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
KR1020030002231A 2003-01-09 2003-01-09 적층박막전주가공물과 그 제작방법. KR20040064191A (ko)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1020030002231A KR20040064191A (ko) 2003-01-09 2003-01-09 적층박막전주가공물과 그 제작방법.
PCT/KR2003/002804 WO2004064155A1 (fr) 2003-01-09 2003-12-23 Gabarit d'electroformage presentant une tige et son procede de fabrication, ainsi que modele metallique minutieux obtenu a partir du gabarit
AU2003289514A AU2003289514A1 (en) 2003-01-09 2003-12-23 Electro-forming master having a pin portion and the same master-manufacturing method, and metal minute pattern made by the master
AU2003289537A AU2003289537A1 (en) 2003-01-09 2003-12-26 Laminate made by electro-forming and method for manufacturing the same
PCT/KR2003/002856 WO2004064156A1 (fr) 2003-01-09 2003-12-26 Lamine realise par electroformage et son procede de fabrication
PCT/KR2004/000021 WO2004064135A1 (fr) 2003-01-09 2004-01-09 Element d'electroformage de forme composite, sa matrice d'electroformage et procede de fabrication associe

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020030002231A KR20040064191A (ko) 2003-01-09 2003-01-09 적층박막전주가공물과 그 제작방법.

Publications (1)

Publication Number Publication Date
KR20040064191A true KR20040064191A (ko) 2004-07-16

Family

ID=32709865

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020030002231A KR20040064191A (ko) 2003-01-09 2003-01-09 적층박막전주가공물과 그 제작방법.

Country Status (3)

Country Link
KR (1) KR20040064191A (fr)
AU (2) AU2003289514A1 (fr)
WO (3) WO2004064155A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160061983A (ko) * 2013-09-27 2016-06-01 인텔 코포레이션 인접한 영역들 위로의 층들의 침범을 제한하는 것을 포함한 선택적 화학 반응에 의한 작은 영역들 위에서의 재료 층들의 형성

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100980217B1 (ko) * 2004-12-17 2010-09-06 삼원에프에이 (주) 전주가공물의 균일성장 현상을 이용한 전주마스타를 제작하는 방법
JP5786906B2 (ja) * 2013-08-02 2015-09-30 オムロン株式会社 電鋳部品の製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55100557A (en) * 1979-01-25 1980-07-31 Dainippon Printing Co Ltd Electroforming method
JPS61208245A (ja) * 1985-03-13 1986-09-16 Kyushu Hitachi Maxell Ltd 半導体装置のリ−ドフレ−ム製造方法
JPS62241347A (ja) * 1986-04-14 1987-10-22 Hitachi Ltd 電鋳法によるキヤリアテ−プ類の製造方法
JPH02132834A (ja) * 1988-11-14 1990-05-22 Toshiba Corp 半導体装置の配線構造
JPH02137915A (ja) * 1988-11-18 1990-05-28 Sharp Corp スタンパの製造方法
JPH03146652A (ja) * 1989-11-02 1991-06-21 Kenseidou Kagaku Kogyo Kk 微細パターンの孔を有する金属部品の製法、及びそれに使用するマスター
JP3588879B2 (ja) * 1995-11-09 2004-11-17 松下電器産業株式会社 微細パターン形成方法
JPH10319222A (ja) * 1997-05-16 1998-12-04 Matsushita Electric Ind Co Ltd 微細パターンの製造方法
JP2000313985A (ja) * 1999-04-27 2000-11-14 Ricoh Co Ltd 電鋳用原版及びその製造方法、電鋳部品及びその製造方法並びに振動板の製造方法
KR200203507Y1 (ko) * 2000-03-28 2000-11-15 김정식 섀도우 마스크

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160061983A (ko) * 2013-09-27 2016-06-01 인텔 코포레이션 인접한 영역들 위로의 층들의 침범을 제한하는 것을 포함한 선택적 화학 반응에 의한 작은 영역들 위에서의 재료 층들의 형성

Also Published As

Publication number Publication date
WO2004064156A1 (fr) 2004-07-29
AU2003289514A1 (en) 2004-08-10
AU2003289537A1 (en) 2004-08-10
WO2004064135A1 (fr) 2004-07-29
WO2004064155A1 (fr) 2004-07-29

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