AU2003289514A1 - Electro-forming master having a pin portion and the same master-manufacturing method, and metal minute pattern made by the master - Google Patents

Electro-forming master having a pin portion and the same master-manufacturing method, and metal minute pattern made by the master

Info

Publication number
AU2003289514A1
AU2003289514A1 AU2003289514A AU2003289514A AU2003289514A1 AU 2003289514 A1 AU2003289514 A1 AU 2003289514A1 AU 2003289514 A AU2003289514 A AU 2003289514A AU 2003289514 A AU2003289514 A AU 2003289514A AU 2003289514 A1 AU2003289514 A1 AU 2003289514A1
Authority
AU
Australia
Prior art keywords
master
electro
manufacturing
pin portion
pattern made
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003289514A
Inventor
Jeong-Sik Kim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of AU2003289514A1 publication Critical patent/AU2003289514A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D1/00—Electroforming
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D1/00—Electroforming
    • C25D1/10—Moulds; Masks; Masterforms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Moulds For Moulding Plastics Or The Like (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
AU2003289514A 2003-01-09 2003-12-23 Electro-forming master having a pin portion and the same master-manufacturing method, and metal minute pattern made by the master Abandoned AU2003289514A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR10-2003-0002231 2003-01-09
KR1020030002231A KR20040064191A (en) 2003-01-09 2003-01-09 Electroforming material of stacked thin film and fabricating method thereof
PCT/KR2003/002804 WO2004064155A1 (en) 2003-01-09 2003-12-23 Electro-forming master having a pin portion and the same master-manufacturing method, and metal minute pattern made by the master

Publications (1)

Publication Number Publication Date
AU2003289514A1 true AU2003289514A1 (en) 2004-08-10

Family

ID=32709865

Family Applications (2)

Application Number Title Priority Date Filing Date
AU2003289514A Abandoned AU2003289514A1 (en) 2003-01-09 2003-12-23 Electro-forming master having a pin portion and the same master-manufacturing method, and metal minute pattern made by the master
AU2003289537A Abandoned AU2003289537A1 (en) 2003-01-09 2003-12-26 Laminate made by electro-forming and method for manufacturing the same

Family Applications After (1)

Application Number Title Priority Date Filing Date
AU2003289537A Abandoned AU2003289537A1 (en) 2003-01-09 2003-12-26 Laminate made by electro-forming and method for manufacturing the same

Country Status (3)

Country Link
KR (1) KR20040064191A (en)
AU (2) AU2003289514A1 (en)
WO (3) WO2004064155A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100980217B1 (en) * 2004-12-17 2010-09-06 삼원에프에이 (주) Master of Electro-forming
JP5786906B2 (en) * 2013-08-02 2015-09-30 オムロン株式会社 Manufacturing method of electroformed parts
CN105556644B (en) * 2013-09-27 2019-04-19 英特尔公司 By including the chemical reaction for the selectivity for limiting erosion of the material layer above adjacent area come rectangular at material layer over small areas

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55100557A (en) * 1979-01-25 1980-07-31 Dainippon Printing Co Ltd Electroforming method
JPS61208245A (en) * 1985-03-13 1986-09-16 Kyushu Hitachi Maxell Ltd Manufacture of lead frame for semiconductor device
JPS62241347A (en) * 1986-04-14 1987-10-22 Hitachi Ltd Manufacture of carrier tapes through electroforming
JPH02132834A (en) * 1988-11-14 1990-05-22 Toshiba Corp Wiring structure of semiconductor device
JPH02137915A (en) * 1988-11-18 1990-05-28 Sharp Corp Manufacture of stamper
JPH03146652A (en) * 1989-11-02 1991-06-21 Kenseidou Kagaku Kogyo Kk Production of metallic parts having holes of fine pattern and master used therein
JP3588879B2 (en) * 1995-11-09 2004-11-17 松下電器産業株式会社 Fine pattern forming method
JPH10319222A (en) * 1997-05-16 1998-12-04 Matsushita Electric Ind Co Ltd Production of fine pattern
JP2000313985A (en) * 1999-04-27 2000-11-14 Ricoh Co Ltd Electroforming original plate and its production, electroforming parts and their production as well as production of diaphragm
KR20000030903A (en) * 2000-03-28 2000-06-05 김정식 Shadow mask and method of manufacturing the same

Also Published As

Publication number Publication date
KR20040064191A (en) 2004-07-16
WO2004064135A1 (en) 2004-07-29
WO2004064155A1 (en) 2004-07-29
AU2003289537A1 (en) 2004-08-10
WO2004064156A1 (en) 2004-07-29

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase