KR20040064191A - Electroforming material of stacked thin film and fabricating method thereof - Google Patents
Electroforming material of stacked thin film and fabricating method thereof Download PDFInfo
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- KR20040064191A KR20040064191A KR1020030002231A KR20030002231A KR20040064191A KR 20040064191 A KR20040064191 A KR 20040064191A KR 1020030002231 A KR1020030002231 A KR 1020030002231A KR 20030002231 A KR20030002231 A KR 20030002231A KR 20040064191 A KR20040064191 A KR 20040064191A
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D1/00—Electroforming
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D1/00—Electroforming
- C25D1/10—Moulds; Masks; Masterforms
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
Abstract
Description
본 발명은 감광재를 도포한 후, 노광부와 공간부를 형성하며, 상기 공간부에 전주가공을 실시하여 전주가공물을 형성하는 기술분야에 대한 것이다. 전주가공물의 두께가 두꺼운 제품을 얻기 위하여서는 감광재의 두께를 두껍게 하여야만 한다. 그러나 이 경우 감광재의 두께를 두껍게 할 경우, 두꺼운 감광재를 감광시킬 수 있는 광선이 필요하게 된다. 그러나 현실적으로 광선의 능력에 한계를 지니게 되므로 일정깊이 이상의 감광재를 사용을 할 수가 없었다. 이러한 문제점을 해결하기 위하여 본 발명에서는 감광재를 적층시키어서 복수회에 걸친 전주가공을 실시함으로서 이러한 문제를 모두 해결을 할 수가 있게 하였다.The present invention relates to the technical field of forming an electroplated article by applying a photosensitive material, and then forming an exposed portion and a space portion and subjecting the space portion to electroplating. In order to obtain a thick product of the pole cast, the thickness of the photosensitive material must be thickened. In this case, however, when the thickness of the photosensitive material is increased, a light beam capable of photosensitive thick photosensitive material is required. However, in reality, the ability of the light beam is limited, so it was not possible to use a photoresist beyond a certain depth. In order to solve this problem, in the present invention, all the problems can be solved by laminating photosensitive materials and performing the electric pole processing for a plurality of times.
보통의 전주가공물은 감광재의 제약조건에 의하여 일정한 높이 이상으로 얻을 수가 없었다. 그러나 본 발명의 적층박막전주가공물은 반복적인 적층가공을 시행할 수가 있게되어 원하는 높이의 전주가공물을 얻을 수가 있다. 또한 종래에는 전주가공을 실시함에 있어서, 전주가공물이 통상 직선으로 형성이 되어지나, 본 발명에서는 원하는 형태의 곡면형상의 전주가공물을 얻는 것이 가능하다. 이것은 노광부의 위치를 변화시키면서 적층을 반복함에 의하여 원하는 형상의 단면모양을 구성할 수가 있게 할수 있는 적층박막의 특징이라 할 수가 있겠다.Ordinary pole work could not be obtained above a certain height due to the constraint of photoresist. However, the laminated thin film workpiece of the present invention can be subjected to repeated lamination processing, thereby obtaining a poled workpiece of a desired height. In the prior art, the electroplated workpiece is usually formed in a straight line, but in the present invention, it is possible to obtain a curved electroplated workpiece of a desired shape. This can be said to be a feature of the laminated thin film that can form a cross-sectional shape of a desired shape by repeating lamination while changing the position of the exposed portion.
제 1 도는 전극판으로 구성되는 베이스모재위에 제 1 감광제를 도포한 상태를 나타내는 상태도이다.FIG. 1 is a state diagram showing a state where a first photosensitive agent is applied onto a base base material composed of an electrode plate.
제 2 도는 상기 제 1 도의 감광재에 제 1 노광부를 형성한 것을 설명하는 설명도이다.FIG. 2 is an explanatory diagram illustrating the formation of a first exposure portion in the photosensitive material of FIG. 1.
제 3 도는 제 1 전극베이스를 구성하는 설명하는 설명도이다.3 is an explanatory diagram illustrating the configuration of the first electrode base.
제 4 도는 제 1 전극베이스에 전주가공을 시행하여 제 1 전극베이스의 제 1 노광부 사이에 전주가공형성물이 형성되기 시작하는 것을 설명하는 설명도이다.FIG. 4 is an explanatory diagram for explaining that the electroforming processing is started between the first exposure portions of the first electrode base by performing electroforming on the first electrode base.
제 5 도는 제 4 도의 전주가공형성물이 제 1 노광부의 높이만큼 성장하여 제 1 전주가공물이 된 상태를 나타내는 설명도이다.FIG. 5 is an explanatory diagram showing a state in which the electroformed workpiece of FIG. 4 grows by the height of the first exposed portion to become the first electroformed workpiece.
제 6 도는 제 1 전주가공물과 제 1 노광부 상부에 다시 제 1 감광제를 도포하는 것을 나타내는 설명도이다.FIG. 6 is an explanatory diagram showing the application of the first photosensitive agent to the first electroformed workpiece and the upper part of the first exposure portion again.
제 7 도는 상기 제 2 감광제에 다시 제 2 노광부를 형성하는 것을 설명하는 설명도이다.7 is an explanatory diagram for explaining formation of a second exposure portion on the second photosensitive agent.
제 8 도는 제 2 전극베이스(9)로서, 상기 제 7 도의 제 2 감광층의 비노광부를 제거한 것을 나타낸다.FIG. 8 shows that the non-exposed part of the second photosensitive layer of FIG. 7 is removed as the second electrode base 9.
제 9 도는 상기 제 2 전극베이스에 전주가공을 시행하여 전주가공형성물이형성되어지는 것을 설명하는 설명도이다.FIG. 9 is an explanatory diagram illustrating the formation of the electroformed workpiece by performing electroplating on the second electrode base.
제 10 도는 제 9 도의 전주가공형성물이 성장하여 제 2 노광부의 높이만큼 성장을 하여 제 2 전주가공물이 된 상태를 나타내는 상태도이다.FIG. 10 is a state diagram showing a state in which the electroformed workpiece of FIG. 9 grows, grows by the height of the second exposed portion, and becomes the second electroformed workpiece.
제 11 도는 상기의 제 2 전주가공물과 상기의 제 2 노광부 상부에 다시 제 3 감광층을 형성한 것을 나타내는 설명도이다.FIG. 11 is an explanatory view showing that a third photosensitive layer is formed again on the second electroplated material and the second exposed portion.
제 12 도는 상기의 제 3 감광층에 다시 제 3 노광부를 형성한 상태도이다.12 is a state diagram in which the third exposure portion is formed again in the third photosensitive layer.
제 13 도는 제 3 전주베이스를 설명하는 설명도이다.13 is an explanatory diagram for explaining a third pole base.
제 14 도는 제 3 전극베이스에 전주가공을 실시하여 전주가공형성물이 생성되는 것을 설명하는 설명도이다.FIG. 14 is an explanatory view for explaining that electroforming processing is generated by subjecting the third electrode base to electroforming.
제 15 도는 제 14 도의 전주가공형성물이 성장하여 노광부와 같은 높이가 되어 제 3 전주가공물이 이루어 졌을 때의 상태도이다.FIG. 15 is a state diagram when the third pole-shaped workpiece is formed by growing the pole-formed workpiece of FIG. 14 at the same height as the exposed portion.
제 16 도는 적층박막전주가공물의 상태도이다.16 is a state diagram of the laminated thin film electroformed workpiece.
제 17 도는 다양한 형태로 성장을 한 적층박막전주가공물의 실시예이다.17 is an embodiment of a laminated thin film electroformed material grown in various forms.
제 18 도는 다양한 형상으로 성장된 적층박막전주가공물을 형성하는 방법을 설명하는 설명도이다.18 is an explanatory diagram for explaining a method for forming a laminated thin film electroform processed in various shapes.
*도면의 주요부분에 대한 부호의 설명** Description of the symbols for the main parts of the drawings *
1:베이스모재 2:감광재 3:노광부 4:제1전극베이스 5:전주가공형성물 6:제 1 전주가공물 7: 제 2 감광재 8:제 2 노광부 9:제 2 전극베이스 17:적층박막전주가공물DESCRIPTION OF SYMBOLS 1 Base base material 2: Photosensitive material 3: Exposure part 4: 1st electrode base 5: Electrode processing forming material 6: 1st pole processing material 7: 2nd photosensitive material 8: 2nd exposure part 9: 2nd electrode base 17: Laminated Thin Film Electrode
본원 발명은 전주가공물 있어서, 베이스모재에 감광재를 도포한 후, 이를 노광과 세척공정을 통하여 제 1 노광부와 제 1 공간부를 형성한 제 1 전극베이스를 형성하며, 상기 제 1 적극베이스에 전주가공을 실시하여 제 1 공간부에 제 1 전주가공물을 형성하는 기초공정과; 상기 제 1 전주가공물과 제 1 노광부 상부에 다시 감광재를 도포한 후, 이를 노광과 세척공정을 통하여 제 2 노광부와 제 2 공간부를 형성한 제 2 전극베이스를 형성하며, 상기 제 2 적극베이스에 전주가공을 실시하여 제 2 공간부에 제 2 전주가공물을 형성하는 적층공정을 거쳐서 형성되는 것을 특징으로 하는 적층박막전주가공물과 그 제작방법에 대한 것이다. 본 발명에서는 보통 적층공정이 2회 이상으로 다수 반복되어지는 것이 일반적이다. 기초공정 후에 행하여 지는 적층공정에서 제 1 노광부와 동일한 위치에 제 2 노광부가 형성이 되도록 하면 생성되는 전주가공물을 수직의 형태로 적층이 되어지나, 적층공정에서 제 1 노광부와 제 2 노광부가 위치가 달리 구성하게 되면 직선이 아닌 곡선형태의 다양한 형태로 전주가공물을 적층시킬 수가 있다. 이하에서는 도면을 참고로 하여 본 발명을 상세히 설명하겠다.According to the present invention, after the photosensitive material is applied to the base substrate, the first electrode base having the first exposed portion and the first space portion is formed through an exposure and washing process, and the electrolytic pole is formed on the first positive base. A basic step of processing to form a first electroformed workpiece in the first space; After applying the photoresist on the first electroformed workpiece and the first exposure part again, a second electrode base having a second exposure part and a second space part is formed through an exposure and washing process, and the second positive electrode is formed. The present invention relates to a laminated thin film electroformed article and a method of manufacturing the same, wherein the base is formed through a lamination process of forming a second electroformed article in the second space by performing electroforming. In the present invention, it is common for the lamination step to be repeated two or more times. If the second exposure portion is formed at the same position as the first exposure portion in the lamination step performed after the basic step, the resultant pole-shaped workpiece is laminated in a vertical form, but in the lamination step, the first exposure portion and the second exposure portion are laminated. If the position is configured differently, it is possible to stack the workpieces in various forms of curved lines instead of straight lines. Hereinafter, the present invention will be described in detail with reference to the drawings.
제 1 도는 전극판으로 구성되는 베이스모재(1)위에 제 1 감광제(2)를 도포한 상태를 나타내는 상태도이다.1 is a state diagram showing a state in which the first photosensitive agent 2 is applied onto the base base material 1 constituted by the electrode plate.
제 2 도는 상기 제 1 도의 감광재에 제 1 노광부(3)를 형성한 것을 설명하는 설명도이다.FIG. 2 is an explanatory diagram illustrating the formation of the first exposure portion 3 on the photosensitive material of FIG. 1.
제 3 도는 제 1 전극베이스를 구성하는 설명하는 설명도이다. 제 1 전극베이스(4)란 베이스모재에 도포된 감광층의 노광부를 제외한 부분을 제거한 것으로 정의를 한다. 베이스모재는 통상 판재의 전도체의 판재로 구성이 되며 실시예로서는잘 연마되어진 스테인레스 스틸판을 들 수가 있다.스테인레스 스틸판은 니켈이나 구리 등의 전주가공물과 쉽게 탈형이 되며 강한 강도를 가지는 전도체로서 본 발명의 실시예에서 가장 보편적으로 사용이 되어진다. 본 발명에서는 베이스모재의 하부측은 기술적인 의미를 두지 않으므로 설명이 생략이 되어지나, 베이스모재의 하부는 전주가공이 되어지지 않도록 절연을 시키는 것이 바람직하다.3 is an explanatory diagram illustrating the configuration of the first electrode base. The 1st electrode base 4 is defined as removing the part except the exposure part of the photosensitive layer apply | coated to the base base material. The base base material is usually composed of a plate of a conductor of a plate, and examples thereof include a well polished stainless steel plate. A stainless steel plate is a conductor having a high strength and easily demolded with electroforming such as nickel or copper. In the embodiment of the most commonly used. In the present invention, since the lower side of the base base material does not have a technical meaning, description thereof will be omitted, but it is preferable to insulate the lower part of the base base material so that electric pole processing is not performed.
제 4 도는 제 1 전극베이스에 전주가공을 시행하여 제 1 전극베이스의 제 1 노광부 사이에 전주가공형성물(5)이 형성되기 시작하는 것을 설명하는 설명도이다.FIG. 4 is an explanatory diagram for explaining that the electroforming process 5 starts to be formed between the first exposure portions of the first electrode base by performing electroforming on the first electrode base.
제 5 도는 제 4 도의 전주가공형성물이 제 1 노광부의 높이만큼 성장하여 제 1 전주가공물(6)이 된 상태를 나타내는 설명도이다.FIG. 5 is an explanatory diagram showing a state in which the electroformed workpiece of FIG. 4 grows by the height of the first exposed portion to form the first electroformed workpiece 6.
제 6 도는 제 1 전주가공물과 제 1 노광부 상부에 다시 제 1 감광제(7)를 도포하는 것을 나타내는 설명도이다.FIG. 6 is an explanatory diagram showing that the first photosensitive agent 7 is again applied to the first electroforming material and the first exposure portion.
제 7 도는 상기 제 2 감광제에 다시 제 2 노광부를 형성하는 것을 설명하는 설명도이다.7 is an explanatory diagram for explaining formation of a second exposure portion on the second photosensitive agent.
제 8 도는 제 2 전극베이스(9)로서, 상기 제 7 도의 제 2 감광층의 비노광부를 제거한 것을 나타낸다.FIG. 8 shows that the non-exposed part of the second photosensitive layer of FIG. 7 is removed as the second electrode base 9.
제 9 도는 상기 제 2 전극베이스에 전주가공을 시행하여 전주가공형성물(10)이 형성되어지는 것을 설명하는 설명도이다.FIG. 9 is an explanatory diagram illustrating that the electroforming processing product 10 is formed by performing electroforming on the second electrode base.
제 10 도는 제 9 도의 전주가공형성물이 성장하여 제 2 노광부의 높이만큼 성장을 하여 제 2 전주가공물(11)이 된 상태를 나타내는 상태도이다.FIG. 10 is a state diagram showing a state in which the electroformed workpiece of FIG. 9 grows, grows by the height of the second exposed portion, and becomes the second electroformed workpiece 11.
제 11 도는 상기의 제 2 전주가공물과 상기의 제 2 노광부 상부에 다시 제 3감광층(12)을 형성한 것을 나타내는 설명도이다.FIG. 11 is an explanatory diagram showing that the third photosensitive layer 12 is formed again on the second electroforming material and the second exposed portion.
제 12 도는 상기의 제 3 감광층에 다시 제 3 노광부(13)를 형성한 상태도이다.FIG. 12 is a state diagram in which the third exposure portion 13 is again formed in the third photosensitive layer.
제 13 도는 제 3 전주베이스를 설명하는 설명도이다. 이는 제 12 도의 감광재에서 노광되어지지 않은 부분을 제거한 것으로서 이를 제 3 전극베이스(14)라 정의한다.13 is an explanatory diagram for explaining a third pole base. This removes the unexposed portion of the photosensitive material of FIG. 12 and defines it as the third electrode base 14.
제 14 도는 제 3 전극베이스에 전주가공을 실시하여 전주가공형성물(15)이 생성되는 것을 설명하는 설명도이다.FIG. 14 is an explanatory diagram for explaining that the electroforming processing product 15 is generated by subjecting the third electrode base to electroforming.
제 15 도는 제 14 도의 전주가공형성물이 성장하여 노광부와 같은 높이가 되어 제 3 전주가공물(16)이 이루어 졌을 때의 상태도이다.FIG. 15 is a state diagram when the third pole-shaped workpiece 16 is formed by growing the pole-formed workpiece of FIG. 14 to the same height as the exposed portion.
제 16 도는 적층박막전주가공물의 상태도이다. 이는 상기 제 15 도에서 베이스모재와 모든 노광부를 제거한 것으로서 이를 적층박막전주가 공물(17)이라 정의한다.16 is a state diagram of the laminated thin film electroformed workpiece. In FIG. 15, the base base material and all the exposed parts are removed, which is defined as a laminated thin film tribute 17.
제 17 도는 다양한 형태로 성장을 한 적층박막전주가공물의 실시예이다. 적층박막전주가공물이 S자 형상으로서 성장한 것(18)과 단차를 가지고 성장한 것(19)과 단지모양의 형상으로 성장한 것(20)등의 다양한 형상을 구성을 할 수가 있다. 이러한 적층박막전주가공물들은 적층되어진 감광재(21)들에 의하여 둘러싸여지게 된다. 이와 같이 적층되어진 감광재들을 본 발명에서는 적층감광재라 정의한다.17 is an embodiment of a laminated thin film electroformed material grown in various forms. Various shapes such as laminated thin film electroformed products grown in an S-shape (18), grown in a step shape (19), and grown in a jar shape (20) can be configured. These laminated thin film workpieces are surrounded by the stacked photosensitive materials 21. Photosensitive materials stacked in this manner are defined as laminated photosensitive materials in the present invention.
제 18 도는 다양한 형상으로 성장된 적층박막전주가공물을 형성하는 방법을 설명하는 설명도이다. 제 1 도에서부터 제 16 도에 걸쳐서는 3차례에 걸쳐서 적층감광층 을 형성하였으며, 그 결과 3층의 적층박막 전주가공물을 얻을 수가 있게 되었다. 본 발명에서는 적층박막전주가 공물의 층수를 원하는 수만큼 다수 회를 실시를 할 수가 있다. 이와같이 다층으로 적층박막전주가공물을 구성할 때, 노광부의 위치를 언제나 동일한 위치에 구성을 하게 할 수도 있지만, 노광부의 위치를 옮겨가면서 다층을 구성을 할 수도 있다. 언제나 동일한 위치에 노광을 시키면서 적층을 하게되면 수직으로만 성장이 되어지는 적층박막전주가 공물을 얻을 수가 있고, 노광부의 위치를 옮기면서 적층을 하게 되면 다양한 형태의 적층박막전주가공물을 얻을 수가 있게된다. 제 18 도는 5회에 걸쳐 다섯층을(22,23,24,25,26) 적층 한 것으로서 이때 노광부의 위치는 각 적층단계마다 달리 구성을 하여 적층을 실시한 것이다.18 is an explanatory diagram for explaining a method for forming a laminated thin film electroform processed in various shapes. The lamination photosensitive layer was formed three times from FIG. 1 to FIG. 16, and as a result, three laminated thin film electroforms were obtained. In the present invention, the laminated thin film pole can be carried out a number of times as many times as desired. As described above, when the laminated thin film electroformed workpiece is formed in multiple layers, the position of the exposed portion may be always configured at the same position, but the multilayered structure may be formed by moving the position of the exposed portion. When exposing to the same position at all times, the laminated thin film pole which is grown only vertically can obtain a tribute, and when the exposed portion is moved while being laminated, various types of laminated thin film electroforms can be obtained. In FIG. 18, five layers (22, 23, 24, 25, and 26) are stacked five times. At this time, the positions of the exposed portions are differently configured for each stacking step.
감광제에 의하여 노광부와 공간부를 형성하여 전주가공을 실시함에 있어서 감광을 시킬 수가 있는 감광제의 두께는 일정한 한계를 지니고 있어서 전주가공물의 높이를 일정한 높이 이상으로 얻을 수가 없었으나 본 발명의 적층박막전주가공물은 반복적인 적층가공을 시행할 수가 있게되어 원하는 높이의 전주가공물을 얻을 수가 있다. 또한 전주가공물의 적층에 있어서 연속적으로 적층이 이루어 지게 됨에 따라 적층에 따른 경계면이 없는 큰 장점도 가지게 된다.Although the thickness of the photoresist which can be exposed to photoresist by forming the exposed part and the space part by the photoresist has a certain limit, the height of the electroformed workpiece cannot be obtained above a certain height, but the laminated thin film electroformed product of the present invention. It is possible to perform repeated lamination processing to obtain the pole-shaped workpiece of the desired height. In addition, as the lamination is continuously performed in the lamination of the electroformed workpiece, there is a big advantage that there is no interface according to the lamination.
Claims (8)
Priority Applications (6)
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KR1020030002231A KR20040064191A (en) | 2003-01-09 | 2003-01-09 | Electroforming material of stacked thin film and fabricating method thereof |
PCT/KR2003/002804 WO2004064155A1 (en) | 2003-01-09 | 2003-12-23 | Electro-forming master having a pin portion and the same master-manufacturing method, and metal minute pattern made by the master |
AU2003289514A AU2003289514A1 (en) | 2003-01-09 | 2003-12-23 | Electro-forming master having a pin portion and the same master-manufacturing method, and metal minute pattern made by the master |
AU2003289537A AU2003289537A1 (en) | 2003-01-09 | 2003-12-26 | Laminate made by electro-forming and method for manufacturing the same |
PCT/KR2003/002856 WO2004064156A1 (en) | 2003-01-09 | 2003-12-26 | Laminate made by electro-forming and method for manufacturing the same |
PCT/KR2004/000021 WO2004064135A1 (en) | 2003-01-09 | 2004-01-09 | Composite shape electroforming member, its electroforming master and method for manufacturing the same |
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KR1020030002231A KR20040064191A (en) | 2003-01-09 | 2003-01-09 | Electroforming material of stacked thin film and fabricating method thereof |
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AU (2) | AU2003289514A1 (en) |
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KR20160061983A (en) * | 2013-09-27 | 2016-06-01 | 인텔 코포레이션 | Forming layers of materials over small regions by selective chemical reaction including limiting encroachment of the layers over adjacent regions |
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KR100980217B1 (en) * | 2004-12-17 | 2010-09-06 | 삼원에프에이 (주) | Master of Electro-forming |
JP5786906B2 (en) * | 2013-08-02 | 2015-09-30 | オムロン株式会社 | Manufacturing method of electroformed parts |
Family Cites Families (10)
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JPS55100557A (en) * | 1979-01-25 | 1980-07-31 | Dainippon Printing Co Ltd | Electroforming method |
JPS61208245A (en) * | 1985-03-13 | 1986-09-16 | Kyushu Hitachi Maxell Ltd | Manufacture of lead frame for semiconductor device |
JPS62241347A (en) * | 1986-04-14 | 1987-10-22 | Hitachi Ltd | Manufacture of carrier tapes through electroforming |
JPH02132834A (en) * | 1988-11-14 | 1990-05-22 | Toshiba Corp | Wiring structure of semiconductor device |
JPH02137915A (en) * | 1988-11-18 | 1990-05-28 | Sharp Corp | Manufacture of stamper |
JPH03146652A (en) * | 1989-11-02 | 1991-06-21 | Kenseidou Kagaku Kogyo Kk | Production of metallic parts having holes of fine pattern and master used therein |
JP3588879B2 (en) * | 1995-11-09 | 2004-11-17 | 松下電器産業株式会社 | Fine pattern forming method |
JPH10319222A (en) * | 1997-05-16 | 1998-12-04 | Matsushita Electric Ind Co Ltd | Production of fine pattern |
JP2000313985A (en) * | 1999-04-27 | 2000-11-14 | Ricoh Co Ltd | Electroforming original plate and its production, electroforming parts and their production as well as production of diaphragm |
KR200203507Y1 (en) * | 2000-03-28 | 2000-11-15 | 김정식 | Shadow mask |
-
2003
- 2003-01-09 KR KR1020030002231A patent/KR20040064191A/en not_active Application Discontinuation
- 2003-12-23 WO PCT/KR2003/002804 patent/WO2004064155A1/en not_active Application Discontinuation
- 2003-12-23 AU AU2003289514A patent/AU2003289514A1/en not_active Abandoned
- 2003-12-26 AU AU2003289537A patent/AU2003289537A1/en not_active Abandoned
- 2003-12-26 WO PCT/KR2003/002856 patent/WO2004064156A1/en not_active Application Discontinuation
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2004
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Cited By (1)
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KR20160061983A (en) * | 2013-09-27 | 2016-06-01 | 인텔 코포레이션 | Forming layers of materials over small regions by selective chemical reaction including limiting encroachment of the layers over adjacent regions |
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AU2003289514A1 (en) | 2004-08-10 |
WO2004064135A1 (en) | 2004-07-29 |
WO2004064155A1 (en) | 2004-07-29 |
WO2004064156A1 (en) | 2004-07-29 |
AU2003289537A1 (en) | 2004-08-10 |
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