KR20040043638A - 표면수식된 탄소나노튜브를 이용한 패턴 형성방법 - Google Patents
표면수식된 탄소나노튜브를 이용한 패턴 형성방법 Download PDFInfo
- Publication number
- KR20040043638A KR20040043638A KR1020020072017A KR20020072017A KR20040043638A KR 20040043638 A KR20040043638 A KR 20040043638A KR 1020020072017 A KR1020020072017 A KR 1020020072017A KR 20020072017 A KR20020072017 A KR 20020072017A KR 20040043638 A KR20040043638 A KR 20040043638A
- Authority
- KR
- South Korea
- Prior art keywords
- carbon nanotubes
- photoinitiator
- film
- formula
- carbon nanotube
- Prior art date
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical class [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 102
- 238000000034 method Methods 0.000 title claims abstract description 36
- 239000002356 single layer Substances 0.000 title 1
- 239000002041 carbon nanotube Substances 0.000 claims abstract description 82
- 229910021393 carbon nanotube Inorganic materials 0.000 claims abstract description 82
- 238000000576 coating method Methods 0.000 claims abstract description 42
- 239000011248 coating agent Substances 0.000 claims abstract description 41
- 125000000524 functional group Chemical group 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 150000001875 compounds Chemical class 0.000 claims abstract description 10
- 239000003960 organic solvent Substances 0.000 claims abstract description 9
- 239000002904 solvent Substances 0.000 claims abstract description 9
- 238000006243 chemical reaction Methods 0.000 claims description 13
- -1 dibenzosuberon Chemical compound 0.000 claims description 11
- 239000000178 monomer Substances 0.000 claims description 10
- 239000000126 substance Substances 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 239000007788 liquid Substances 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- ISAOCJYIOMOJEB-UHFFFAOYSA-N benzoin Chemical class C=1C=CC=CC=1C(O)C(=O)C1=CC=CC=C1 ISAOCJYIOMOJEB-UHFFFAOYSA-N 0.000 claims description 6
- AZQWKYJCGOJGHM-UHFFFAOYSA-N 1,4-benzoquinone Chemical compound O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 claims description 4
- 239000011230 binding agent Substances 0.000 claims description 4
- YRHRIQCWCFGUEQ-UHFFFAOYSA-N thioxanthen-9-one Chemical class C1=CC=C2C(=O)C3=CC=CC=C3SC2=C1 YRHRIQCWCFGUEQ-UHFFFAOYSA-N 0.000 claims description 4
- KWOLFJPFCHCOCG-UHFFFAOYSA-N Acetophenone Chemical group CC(=O)C1=CC=CC=C1 KWOLFJPFCHCOCG-UHFFFAOYSA-N 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- SEACYXSIPDVVMV-UHFFFAOYSA-L eosin Y Chemical compound [Na+].[Na+].[O-]C(=O)C1=CC=CC=C1C1=C2C=C(Br)C(=O)C(Br)=C2OC2=C(Br)C([O-])=C(Br)C=C21 SEACYXSIPDVVMV-UHFFFAOYSA-L 0.000 claims description 3
- 150000002923 oximes Chemical class 0.000 claims description 3
- 229920000642 polymer Polymers 0.000 claims description 3
- 238000007740 vapor deposition Methods 0.000 claims description 3
- LRSLDYIFOCTRHR-UHFFFAOYSA-N (3-benzoyl-4-ethylphenyl)-(4-ethylphenyl)methanone Chemical compound C1=CC(CC)=CC=C1C(=O)C1=CC=C(CC)C(C(=O)C=2C=CC=CC=2)=C1 LRSLDYIFOCTRHR-UHFFFAOYSA-N 0.000 claims description 2
- VNQXSTWCDUXYEZ-UHFFFAOYSA-N 1,7,7-trimethylbicyclo[2.2.1]heptane-2,3-dione Chemical compound C1CC2(C)C(=O)C(=O)C1C2(C)C VNQXSTWCDUXYEZ-UHFFFAOYSA-N 0.000 claims description 2
- PAAVDLDRAZEFGW-UHFFFAOYSA-N 2-butoxyethyl 4-(dimethylamino)benzoate Chemical compound CCCCOCCOC(=O)C1=CC=C(N(C)C)C=C1 PAAVDLDRAZEFGW-UHFFFAOYSA-N 0.000 claims description 2
- SJEBAWHUJDUKQK-UHFFFAOYSA-N 2-ethylanthraquinone Chemical compound C1=CC=C2C(=O)C3=CC(CC)=CC=C3C(=O)C2=C1 SJEBAWHUJDUKQK-UHFFFAOYSA-N 0.000 claims description 2
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical group OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 2
- SLINHMUFWFWBMU-UHFFFAOYSA-N Triisopropanolamine Chemical compound CC(O)CN(CC(C)O)CC(C)O SLINHMUFWFWBMU-UHFFFAOYSA-N 0.000 claims description 2
- CQWJDWCWTPQDSU-UHFFFAOYSA-N [4-(dimethylamino)-2-ethylhexyl] benzoate Chemical compound CCC(N(C)C)CC(CC)COC(=O)C1=CC=CC=C1 CQWJDWCWTPQDSU-UHFFFAOYSA-N 0.000 claims description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 2
- 150000008366 benzophenones Chemical class 0.000 claims description 2
- QDVNNDYBCWZVTI-UHFFFAOYSA-N bis[4-(ethylamino)phenyl]methanone Chemical compound C1=CC(NCC)=CC=C1C(=O)C1=CC=C(NCC)C=C1 QDVNNDYBCWZVTI-UHFFFAOYSA-N 0.000 claims description 2
- HXTBYXIZCDULQI-UHFFFAOYSA-N bis[4-(methylamino)phenyl]methanone Chemical compound C1=CC(NC)=CC=C1C(=O)C1=CC=C(NC)C=C1 HXTBYXIZCDULQI-UHFFFAOYSA-N 0.000 claims description 2
- 229930006711 bornane-2,3-dione Natural products 0.000 claims description 2
- VFHVQBAGLAREND-UHFFFAOYSA-N diphenylphosphoryl-(2,4,6-trimethylphenyl)methanone Chemical compound CC1=CC(C)=CC(C)=C1C(=O)P(=O)(C=1C=CC=CC=1)C1=CC=CC=C1 VFHVQBAGLAREND-UHFFFAOYSA-N 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- 238000000608 laser ablation Methods 0.000 claims description 2
- CRVGTESFCCXCTH-UHFFFAOYSA-N methyl diethanolamine Chemical compound OCCN(C)CCO CRVGTESFCCXCTH-UHFFFAOYSA-N 0.000 claims description 2
- YLHXLHGIAMFFBU-UHFFFAOYSA-N methyl phenylglyoxalate Chemical compound COC(=O)C(=O)C1=CC=CC=C1 YLHXLHGIAMFFBU-UHFFFAOYSA-N 0.000 claims description 2
- 239000004033 plastic Substances 0.000 claims description 2
- 229920003023 plastic Polymers 0.000 claims description 2
- 238000000197 pyrolysis Methods 0.000 claims description 2
- 230000007261 regionalization Effects 0.000 claims description 2
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 claims 1
- 229920001577 copolymer Polymers 0.000 claims 1
- 238000010891 electric arc Methods 0.000 claims 1
- MVQLEZWPIWKLBY-UHFFFAOYSA-N tert-butyl 2-benzoylbenzenecarboperoxoate Chemical compound CC(C)(C)OOC(=O)C1=CC=CC=C1C(=O)C1=CC=CC=C1 MVQLEZWPIWKLBY-UHFFFAOYSA-N 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 9
- 125000000217 alkyl group Chemical group 0.000 abstract 1
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 44
- 239000010408 film Substances 0.000 description 18
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 13
- 238000002360 preparation method Methods 0.000 description 13
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 12
- 239000000203 mixture Substances 0.000 description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 11
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 9
- 239000004417 polycarbonate Substances 0.000 description 9
- 229920000515 polycarbonate Polymers 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 7
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 6
- 239000012153 distilled water Substances 0.000 description 6
- 239000002244 precipitate Substances 0.000 description 6
- 239000000706 filtrate Substances 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 239000003054 catalyst Substances 0.000 description 4
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Chemical compound CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 description 4
- 229910017604 nitric acid Inorganic materials 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 3
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 3
- 239000002202 Polyethylene glycol Substances 0.000 description 3
- 238000001237 Raman spectrum Methods 0.000 description 3
- 125000003178 carboxy group Chemical class [H]OC(*)=O 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- DQYBDCGIPTYXML-UHFFFAOYSA-N ethoxyethane;hydrate Chemical compound O.CCOCC DQYBDCGIPTYXML-UHFFFAOYSA-N 0.000 description 3
- 239000003574 free electron Substances 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 239000003721 gunpowder Substances 0.000 description 3
- 230000001771 impaired effect Effects 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 229920001223 polyethylene glycol Polymers 0.000 description 3
- 238000000746 purification Methods 0.000 description 3
- 238000010526 radical polymerization reaction Methods 0.000 description 3
- 239000011541 reaction mixture Substances 0.000 description 3
- SLBOQBILGNEPEB-UHFFFAOYSA-N 1-chloroprop-2-enylbenzene Chemical compound C=CC(Cl)C1=CC=CC=C1 SLBOQBILGNEPEB-UHFFFAOYSA-N 0.000 description 2
- JWYVGKFDLWWQJX-UHFFFAOYSA-N 1-ethenylazepan-2-one Chemical compound C=CN1CCCCCC1=O JWYVGKFDLWWQJX-UHFFFAOYSA-N 0.000 description 2
- KWVGIHKZDCUPEU-UHFFFAOYSA-N 2,2-dimethoxy-2-phenylacetophenone Chemical compound C=1C=CC=CC=1C(OC)(OC)C(=O)C1=CC=CC=C1 KWVGIHKZDCUPEU-UHFFFAOYSA-N 0.000 description 2
- GOXQRTZXKQZDDN-UHFFFAOYSA-N 2-Ethylhexyl acrylate Chemical compound CCCCC(CC)COC(=O)C=C GOXQRTZXKQZDDN-UHFFFAOYSA-N 0.000 description 2
- LWRBVKNFOYUCNP-UHFFFAOYSA-N 2-methyl-1-(4-methylsulfanylphenyl)-2-morpholin-4-ylpropan-1-one Chemical compound C1=CC(SC)=CC=C1C(=O)C(C)(C)N1CCOCC1 LWRBVKNFOYUCNP-UHFFFAOYSA-N 0.000 description 2
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 2
- 244000028419 Styrax benzoin Species 0.000 description 2
- 235000000126 Styrax benzoin Nutrition 0.000 description 2
- 235000008411 Sumatra benzointree Nutrition 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- HFBMWMNUJJDEQZ-UHFFFAOYSA-N acryloyl chloride Chemical compound ClC(=O)C=C HFBMWMNUJJDEQZ-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 229960002130 benzoin Drugs 0.000 description 2
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 2
- 239000012965 benzophenone Substances 0.000 description 2
- MQDJYUACMFCOFT-UHFFFAOYSA-N bis[2-(1-hydroxycyclohexyl)phenyl]methanone Chemical compound C=1C=CC=C(C(=O)C=2C(=CC=CC=2)C2(O)CCCCC2)C=1C1(O)CCCCC1 MQDJYUACMFCOFT-UHFFFAOYSA-N 0.000 description 2
- 238000005119 centrifugation Methods 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 229910003472 fullerene Inorganic materials 0.000 description 2
- VOZRXNHHFUQHIL-UHFFFAOYSA-N glycidyl methacrylate Chemical compound CC(=C)C(=O)OCC1CO1 VOZRXNHHFUQHIL-UHFFFAOYSA-N 0.000 description 2
- 235000019382 gum benzoic Nutrition 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 125000002816 methylsulfanyl group Chemical group [H]C([H])([H])S[*] 0.000 description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
- 238000010992 reflux Methods 0.000 description 2
- 238000000527 sonication Methods 0.000 description 2
- 239000004071 soot Substances 0.000 description 2
- 239000006228 supernatant Substances 0.000 description 2
- 125000000026 trimethylsilyl group Chemical group [H]C([H])([H])[Si]([*])(C([H])([H])[H])C([H])([H])[H] 0.000 description 2
- QNODIIQQMGDSEF-UHFFFAOYSA-N (1-hydroxycyclohexyl)-phenylmethanone Chemical compound C=1C=CC=CC=1C(=O)C1(O)CCCCC1 QNODIIQQMGDSEF-UHFFFAOYSA-N 0.000 description 1
- DEQUKPCANKRTPZ-UHFFFAOYSA-N (2,3-dihydroxyphenyl)-phenylmethanone Chemical compound OC1=CC=CC(C(=O)C=2C=CC=CC=2)=C1O DEQUKPCANKRTPZ-UHFFFAOYSA-N 0.000 description 1
- SGCGFUOYEVLOPJ-UHFFFAOYSA-N (3-hydroxy-3-phenoxypropyl) prop-2-enoate Chemical compound C=CC(=O)OCCC(O)OC1=CC=CC=C1 SGCGFUOYEVLOPJ-UHFFFAOYSA-N 0.000 description 1
- PSGCQDPCAWOCSH-UHFFFAOYSA-N (4,7,7-trimethyl-3-bicyclo[2.2.1]heptanyl) prop-2-enoate Chemical compound C1CC2(C)C(OC(=O)C=C)CC1C2(C)C PSGCQDPCAWOCSH-UHFFFAOYSA-N 0.000 description 1
- OVQQQQUJAGEBHH-UHFFFAOYSA-N 1,1,2,2,3,3,4,4,5,5,6,6,7,7,10,10,10-heptadecafluorodecyl prop-2-enoate Chemical compound FC(F)(F)CCC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)OC(=O)C=C OVQQQQUJAGEBHH-UHFFFAOYSA-N 0.000 description 1
- UYEDESPZQLZMCL-UHFFFAOYSA-N 1,2-dimethylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=C(C)C(C)=CC=C3SC2=C1 UYEDESPZQLZMCL-UHFFFAOYSA-N 0.000 description 1
- MSAHTMIQULFMRG-UHFFFAOYSA-N 1,2-diphenyl-2-propan-2-yloxyethanone Chemical compound C=1C=CC=CC=1C(OC(C)C)C(=O)C1=CC=CC=C1 MSAHTMIQULFMRG-UHFFFAOYSA-N 0.000 description 1
- DKEGCUDAFWNSSO-UHFFFAOYSA-N 1,8-dibromooctane Chemical compound BrCCCCCCCCBr DKEGCUDAFWNSSO-UHFFFAOYSA-N 0.000 description 1
- CRSWJOWOXRBLSG-UHFFFAOYSA-N 1-(2-butylphenyl)-2,2,2-trichloroethanone Chemical compound CCCCC1=CC=CC=C1C(=O)C(Cl)(Cl)Cl CRSWJOWOXRBLSG-UHFFFAOYSA-N 0.000 description 1
- 239000012956 1-hydroxycyclohexylphenyl-ketone Substances 0.000 description 1
- VBHXIMACZBQHPX-UHFFFAOYSA-N 2,2,2-trifluoroethyl prop-2-enoate Chemical compound FC(F)(F)COC(=O)C=C VBHXIMACZBQHPX-UHFFFAOYSA-N 0.000 description 1
- PIZHFBODNLEQBL-UHFFFAOYSA-N 2,2-diethoxy-1-phenylethanone Chemical compound CCOC(OCC)C(=O)C1=CC=CC=C1 PIZHFBODNLEQBL-UHFFFAOYSA-N 0.000 description 1
- QRIMLDXJAPZHJE-UHFFFAOYSA-N 2,3-dihydroxypropyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCC(O)CO QRIMLDXJAPZHJE-UHFFFAOYSA-N 0.000 description 1
- UXCIJKOCUAQMKD-UHFFFAOYSA-N 2,4-dichlorothioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(Cl)=CC(Cl)=C3SC2=C1 UXCIJKOCUAQMKD-UHFFFAOYSA-N 0.000 description 1
- BTJPUDCSZVCXFQ-UHFFFAOYSA-N 2,4-diethylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(CC)=CC(CC)=C3SC2=C1 BTJPUDCSZVCXFQ-UHFFFAOYSA-N 0.000 description 1
- LZHUBCULTHIFNO-UHFFFAOYSA-N 2,4-dihydroxy-1,5-bis[4-(2-hydroxyethoxy)phenyl]-2,4-dimethylpentan-3-one Chemical compound C=1C=C(OCCO)C=CC=1CC(C)(O)C(=O)C(O)(C)CC1=CC=C(OCCO)C=C1 LZHUBCULTHIFNO-UHFFFAOYSA-N 0.000 description 1
- LCHAFMWSFCONOO-UHFFFAOYSA-N 2,4-dimethylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(C)=CC(C)=C3SC2=C1 LCHAFMWSFCONOO-UHFFFAOYSA-N 0.000 description 1
- COORVRSSRBIIFJ-UHFFFAOYSA-N 2-[2-(2-hydroxyethoxy)ethoxy]-1-methoxyethanol;prop-2-enoic acid Chemical compound OC(=O)C=C.COC(O)COCCOCCO COORVRSSRBIIFJ-UHFFFAOYSA-N 0.000 description 1
- FGTYTUFKXYPTML-UHFFFAOYSA-N 2-benzoylbenzoic acid Chemical compound OC(=O)C1=CC=CC=C1C(=O)C1=CC=CC=C1 FGTYTUFKXYPTML-UHFFFAOYSA-N 0.000 description 1
- PTJDGKYFJYEAOK-UHFFFAOYSA-N 2-butoxyethyl prop-2-enoate Chemical compound CCCCOCCOC(=O)C=C PTJDGKYFJYEAOK-UHFFFAOYSA-N 0.000 description 1
- ZCDADJXRUCOCJE-UHFFFAOYSA-N 2-chlorothioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(Cl)=CC=C3SC2=C1 ZCDADJXRUCOCJE-UHFFFAOYSA-N 0.000 description 1
- AEPWOCLBLLCOGZ-UHFFFAOYSA-N 2-cyanoethyl prop-2-enoate Chemical compound C=CC(=O)OCCC#N AEPWOCLBLLCOGZ-UHFFFAOYSA-N 0.000 description 1
- KMNCBSZOIQAUFX-UHFFFAOYSA-N 2-ethoxy-1,2-diphenylethanone Chemical compound C=1C=CC=CC=1C(OCC)C(=O)C1=CC=CC=C1 KMNCBSZOIQAUFX-UHFFFAOYSA-N 0.000 description 1
- FWWXYLGCHHIKNY-UHFFFAOYSA-N 2-ethoxyethyl prop-2-enoate Chemical compound CCOCCOC(=O)C=C FWWXYLGCHHIKNY-UHFFFAOYSA-N 0.000 description 1
- QXYHXSKZFGAGRZ-UHFFFAOYSA-N 2-hydroxy-2-methyl-1-(4-propan-2-ylphenyl)propan-1-one Chemical compound C(C)(C)C1=CC=C(C=C1)C(C(C)(C)O)=O.C(C)(C)C1=CC=C(C=C1)C(C(C)(C)O)=O QXYHXSKZFGAGRZ-UHFFFAOYSA-N 0.000 description 1
- XMLYCEVDHLAQEL-UHFFFAOYSA-N 2-hydroxy-2-methyl-1-phenylpropan-1-one Chemical compound CC(C)(O)C(=O)C1=CC=CC=C1 XMLYCEVDHLAQEL-UHFFFAOYSA-N 0.000 description 1
- OMIGHNLMNHATMP-UHFFFAOYSA-N 2-hydroxyethyl prop-2-enoate Chemical compound OCCOC(=O)C=C OMIGHNLMNHATMP-UHFFFAOYSA-N 0.000 description 1
- GWZMWHWAWHPNHN-UHFFFAOYSA-N 2-hydroxypropyl prop-2-enoate Chemical compound CC(O)COC(=O)C=C GWZMWHWAWHPNHN-UHFFFAOYSA-N 0.000 description 1
- BQZJOQXSCSZQPS-UHFFFAOYSA-N 2-methoxy-1,2-diphenylethanone Chemical compound C=1C=CC=CC=1C(OC)C(=O)C1=CC=CC=C1 BQZJOQXSCSZQPS-UHFFFAOYSA-N 0.000 description 1
- HFCUBKYHMMPGBY-UHFFFAOYSA-N 2-methoxyethyl prop-2-enoate Chemical compound COCCOC(=O)C=C HFCUBKYHMMPGBY-UHFFFAOYSA-N 0.000 description 1
- MYISVPVWAQRUTL-UHFFFAOYSA-N 2-methylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(C)=CC=C3SC2=C1 MYISVPVWAQRUTL-UHFFFAOYSA-N 0.000 description 1
- KTALPKYXQZGAEG-UHFFFAOYSA-N 2-propan-2-ylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(C(C)C)=CC=C3SC2=C1 KTALPKYXQZGAEG-UHFFFAOYSA-N 0.000 description 1
- BMVWCPGVLSILMU-UHFFFAOYSA-N 5,6-dihydrodibenzo[2,1-b:2',1'-f][7]annulen-11-one Chemical compound C1CC2=CC=CC=C2C(=O)C2=CC=CC=C21 BMVWCPGVLSILMU-UHFFFAOYSA-N 0.000 description 1
- JTHZUSWLNCPZLX-UHFFFAOYSA-N 6-fluoro-3-methyl-2h-indazole Chemical compound FC1=CC=C2C(C)=NNC2=C1 JTHZUSWLNCPZLX-UHFFFAOYSA-N 0.000 description 1
- LVGFPWDANALGOY-UHFFFAOYSA-N 8-methylnonyl prop-2-enoate Chemical compound CC(C)CCCCCCCOC(=O)C=C LVGFPWDANALGOY-UHFFFAOYSA-N 0.000 description 1
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical compound NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 description 1
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 1
- TUWMAWRFFSZUTP-UHFFFAOYSA-N C(C)(C)C1=CC=2C(C3=CC=CC=C3SC2C(=C1)C(C)C)=O.C(C)(C)C1=CC=2C(C3=CC=CC=C3SC2C(=C1)C(C)C)=O Chemical compound C(C)(C)C1=CC=2C(C3=CC=CC=C3SC2C(=C1)C(C)C)=O.C(C)(C)C1=CC=2C(C3=CC=CC=C3SC2C(=C1)C(C)C)=O TUWMAWRFFSZUTP-UHFFFAOYSA-N 0.000 description 1
- NRFFHZODGGUMKA-UHFFFAOYSA-N C(C=C)(=O)O.C(C=C)(=O)OCCN(CC)CC Chemical compound C(C=C)(=O)O.C(C=C)(=O)OCCN(CC)CC NRFFHZODGGUMKA-UHFFFAOYSA-N 0.000 description 1
- SEHXHAWZTFQFKB-UHFFFAOYSA-N C(CCCCCCCCCCC)C1=CC=C(C=C1)C(C(C)(C)O)=O.C(CCCCCCCCCCC)C1=CC=C(C=C1)C(C(C)(C)O)=O Chemical compound C(CCCCCCCCCCC)C1=CC=C(C=C1)C(C(C)(C)O)=O.C(CCCCCCCCCCC)C1=CC=C(C=C1)C(C(C)(C)O)=O SEHXHAWZTFQFKB-UHFFFAOYSA-N 0.000 description 1
- NGPPPMGKUPEESB-UHFFFAOYSA-N CC=1C=C(C(=O)C2=CC(=CC=C2)C)C=CC1OC.CC=1C=C(C(=O)C2=CC(=CC=C2)C)C=CC1OC Chemical compound CC=1C=C(C(=O)C2=CC(=CC=C2)C)C=CC1OC.CC=1C=C(C(=O)C2=CC(=CC=C2)C)C=CC1OC NGPPPMGKUPEESB-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- WOBHKFSMXKNTIM-UHFFFAOYSA-N Hydroxyethyl methacrylate Chemical compound CC(=C)C(=O)OCCO WOBHKFSMXKNTIM-UHFFFAOYSA-N 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
- NQSMEZJWJJVYOI-UHFFFAOYSA-N Methyl 2-benzoylbenzoate Chemical compound COC(=O)C1=CC=CC=C1C(=O)C1=CC=CC=C1 NQSMEZJWJJVYOI-UHFFFAOYSA-N 0.000 description 1
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 1
- WHNWPMSKXPGLAX-UHFFFAOYSA-N N-Vinyl-2-pyrrolidone Chemical compound C=CN1CCCC1=O WHNWPMSKXPGLAX-UHFFFAOYSA-N 0.000 description 1
- HRDWEGIXXGGTFA-UHFFFAOYSA-N OC(CC(C)=O)(C)C.CC(CCC)=O Chemical compound OC(CC(C)=O)(C)C.CC(CCC)=O HRDWEGIXXGGTFA-UHFFFAOYSA-N 0.000 description 1
- 239000005062 Polybutadiene Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 1
- 150000008062 acetophenones Chemical class 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 238000001241 arc-discharge method Methods 0.000 description 1
- WURBFLDFSFBTLW-UHFFFAOYSA-N benzil Chemical compound C=1C=CC=CC=1C(=O)C(=O)C1=CC=CC=C1 WURBFLDFSFBTLW-UHFFFAOYSA-N 0.000 description 1
- MTZQAGJQAFMTAQ-UHFFFAOYSA-N benzoic acid ethyl ester Natural products CCOC(=O)C1=CC=CC=C1 MTZQAGJQAFMTAQ-UHFFFAOYSA-N 0.000 description 1
- GCTPMLUUWLLESL-UHFFFAOYSA-N benzyl prop-2-enoate Chemical compound C=CC(=O)OCC1=CC=CC=C1 GCTPMLUUWLLESL-UHFFFAOYSA-N 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- CREMABGTGYGIQB-UHFFFAOYSA-N carbon carbon Chemical compound C.C CREMABGTGYGIQB-UHFFFAOYSA-N 0.000 description 1
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 1
- 230000021523 carboxylation Effects 0.000 description 1
- 238000006473 carboxylation reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- KBLWLMPSVYBVDK-UHFFFAOYSA-N cyclohexyl prop-2-enoate Chemical compound C=CC(=O)OC1CCCCC1 KBLWLMPSVYBVDK-UHFFFAOYSA-N 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- UPEXLFOSGUTTPC-UHFFFAOYSA-N ditert-butyl 4-[3,4-bis(tert-butylperoxycarbonyl)benzoyl]benzene-1,2-dicarboperoxoate Chemical compound C(C)(C)(C)OOC(=O)C=1C=C(C(=O)C2=CC(=C(C=C2)C(=O)OOC(C)(C)C)C(=O)OOC(C)(C)C)C=CC1C(=O)OOC(C)(C)C.C(C)(C)(C)OOC(=O)C=1C=C(C(=O)C2=CC(=C(C=C2)C(=O)OOC(C)(C)C)C(=O)OOC(C)(C)C)C=CC1C(=O)OOC(C)(C)C UPEXLFOSGUTTPC-UHFFFAOYSA-N 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000004146 energy storage Methods 0.000 description 1
- UHESRSKEBRADOO-UHFFFAOYSA-N ethyl carbamate;prop-2-enoic acid Chemical compound OC(=O)C=C.CCOC(N)=O UHESRSKEBRADOO-UHFFFAOYSA-N 0.000 description 1
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 239000003999 initiator Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- PBOSTUDLECTMNL-UHFFFAOYSA-N lauryl acrylate Chemical compound CCCCCCCCCCCCOC(=O)C=C PBOSTUDLECTMNL-UHFFFAOYSA-N 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000002052 molecular layer Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 239000002071 nanotube Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- GRDVGGZNFFBWTM-UHFFFAOYSA-N phenyl 2-methylprop-2-eneperoxoate Chemical compound CC(=C)C(=O)OOC1=CC=CC=C1 GRDVGGZNFFBWTM-UHFFFAOYSA-N 0.000 description 1
- LYXOWKPVTCPORE-UHFFFAOYSA-N phenyl-(4-phenylphenyl)methanone Chemical compound C=1C=C(C=2C=CC=CC=2)C=CC=1C(=O)C1=CC=CC=C1 LYXOWKPVTCPORE-UHFFFAOYSA-N 0.000 description 1
- WVSFUMAHZBOQGJ-UHFFFAOYSA-N phosphono 2-methylprop-2-eneperoxoate Chemical compound CC(=C)C(=O)OOP(O)(O)=O WVSFUMAHZBOQGJ-UHFFFAOYSA-N 0.000 description 1
- 238000000016 photochemical curing Methods 0.000 description 1
- STIABRLGDKHASC-UHFFFAOYSA-N phthalic acid;prop-2-enoic acid Chemical compound OC(=O)C=C.OC(=O)C1=CC=CC=C1C(O)=O STIABRLGDKHASC-UHFFFAOYSA-N 0.000 description 1
- 229920002857 polybutadiene Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- KCTAWXVAICEBSD-UHFFFAOYSA-N prop-2-enoyloxy prop-2-eneperoxoate Chemical compound C=CC(=O)OOOC(=O)C=C KCTAWXVAICEBSD-UHFFFAOYSA-N 0.000 description 1
- QTECDUFMBMSHKR-UHFFFAOYSA-N prop-2-enyl prop-2-enoate Chemical compound C=CCOC(=O)C=C QTECDUFMBMSHKR-UHFFFAOYSA-N 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000002094 self assembled monolayer Substances 0.000 description 1
- 239000013545 self-assembled monolayer Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000011232 storage material Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 238000002525 ultrasonication Methods 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
- H05K2201/0203—Fillers and particles
- H05K2201/0242—Shape of an individual particle
- H05K2201/026—Nanotubes or nanowires
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/03—Conductive materials
- H05K2201/032—Materials
- H05K2201/0323—Carbon
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/05—Patterning and lithography; Masks; Details of resist
- H05K2203/0502—Patterning and lithography
- H05K2203/0514—Photodevelopable thick film, e.g. conductive or insulating paste
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/221—Carbon nanotubes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/84—Manufacture, treatment, or detection of nanostructure
- Y10S977/89—Deposition of materials, e.g. coating, cvd, or ald
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Composite Materials (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Carbon And Carbon Compounds (AREA)
- Materials For Photolithography (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Polymerisation Methods In General (AREA)
- Paints Or Removers (AREA)
Abstract
Description
Claims (11)
- 다음의 단계들을 포함하는 탄소나노튜브 패턴 형성방법:(a) 이중결합-함유 작용기가 표면에 도입된 탄소나노튜브를 제공하는 단계;(b) 상기 탄소나노튜브를 광개시제와 함께 유기용매에 용해시켜 코팅액을 제조하는 단계;(c) 상기 코팅액을 기재의 표면에 도포하고 예비건조(prebaking)하여 용매를 휘발시켜 필름이 형성되도록 하는 단계;(d) 상기 건조된 필름을 원하는 패턴이 형성된 포토마스크를 통해 UV에 노광시켜 노광부에서 탄소나노튜브의 광중합 반응을 유발하는 단계; 및(e) 상기 노광된 필름을 유기 현상액으로 현상하여 상기 필름의 비노광부를 제거하여 탄소나노튜브의 네가티브 패턴을 수득하는 단계.
- 제 1항에 있어서, 상기 이중결합-함유 작용기가 하기 화학식 1 또는 2의 구조를 갖는 화합물에 의해 제공되는 것을 특징으로 하는 방법:[화학식 1]상기 식에서, R=H 또는 CH3이고; X=Cl, NH2또는 OH 임;[화학식 2]상기 식에서, R1=H 또는 CH3이고; R2=C1~C6의 알킬이며; X=Cl, NH2또는 OH 임.
- 제 1항에 있어서, 상기 탄소나노튜브가 아크방전법, 레이저 삭마법, 고온 필라멘트 플라즈마 화학기상증착법, 마이크로웨이브 플라즈마 화학기상증착법, 열화학 기상증착법, 또는 열분해법으로 제조된 것을 특징으로 하는 방법.
- 제 1항에 있어서, 상기 광개시제가 아세토페논계, 벤조인계, 벤조페논계, 티옥산톤계, 특수형태의 광개시제, 또는 공중합성 광개시제인 것을 특징으로 하는 방법.
- 제 4항에 있어서, 상기 특수형태의 광개시제가 1-페닐-1,2-프로판디온-2-(O-에톡시카르보닐)옥심, 2,4,6-트리메틸 벤조일 디페닐 포스핀 옥사이드, 메틸 페닐글리옥실레이트, 벤질, 9,10-페나프탈렌 퀴논, 캄포르퀴논, 디벤조수베론, 2-에틸안트라퀴논, 4,4'-디에틸이소프탈로페논, 및 3,3',4,4'-테트라(t-부틸퍼옥시카르보닐)벤조페논으로 구성된 군에서 선택되는 것을 특징으로 하는 방법.
- 제 4항에 있어서, 상기 공중합성 광개시제가 하기 화학식 3 내지 6의 화합물로 구성된 군에서 선택되는 것을 특징으로 하는 방법:[화학식 3]상기 식에서, R = 아크릴임;[화학식 4];[화학식 5]; 및[화학식 6].
- 제 1항에 있어서, 상기 기재가 유리 기재, 실리콘 웨이퍼 또는 플라스틱 기재인 것을 특징으로 하는 방법.
- 제 1항에 있어서, 상기 코팅액이 광개시조제를 추가로 포함하는 것을 특징으로 하는 방법.
- 제 8항에 있어서, 상기 광개시조제가 트리에탄올아민, 메틸디에탄올아민, 트리이소프로판올아민, 4,4'-디메틸아미노 벤조페논, 4,4'-디에틸아미노 벤조페논, 2-디메틸아미노 에틸벤조에이트, 4-디메틸아미노 에틸벤조에이트, 2-n-부톡시에틸-4-디메틸아미노벤조에이트, 4-디메틸아미노 이소아밀벤조에이트, 4-디메틸아미노-2-에틸헥실 벤조에이트, 및 에오신 와이(Eosin Y)로 구성된 군에서 선택되는 것을 특징으로 하는 방법.
- 제 1항에 있어서, 상기 코팅액이 이중결합을 함유하는 공중합성 모노머 또는 올리고머를 추가로 포함하여, 상기 광중합 단계에서 상기 탄소나노튜브와 상기 모노머 또는 올리고머의 공중합체가 형성되는 것을 특징으로 하는 방법.
- 제 1항에 있어서, 상기 코팅액이 코팅 바인더로서 이중결합을 함유하지 않는 고분자 또는 올리고머를 추가로 포함하는 것을 특징으로 하는 방법.
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020020072017A KR100801820B1 (ko) | 2002-11-19 | 2002-11-19 | 표면수식된 탄소나노튜브를 이용한 패턴 형성방법 |
EP03256824.8A EP1422563B1 (en) | 2002-11-19 | 2003-10-28 | Method of forming a patterned film of surface-modified carbon nanotubes, surface-modified carbon nanotubes and a film comprising the same |
EP11155249.3A EP2325693B1 (en) | 2002-11-19 | 2003-10-28 | Composition for forming a patterned film of surface-modified carbon nanotubes |
JP2003375753A JP4632341B2 (ja) | 2002-11-19 | 2003-11-05 | 表面修飾された炭素ナノチューブを用いたパターン形成方法 |
CNB2003101181699A CN1332879C (zh) | 2002-11-19 | 2003-11-06 | 表面改性的碳纳米管的图案膜的形成方法 |
US10/713,254 US7008758B2 (en) | 2002-11-19 | 2003-11-17 | Method of forming a patterned film of surface-modified carbon nanotubes |
JP2008134659A JP5189894B2 (ja) | 2002-11-19 | 2008-05-22 | 表面修飾された炭素ナノチューブおよびこれを含む組成物 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020020072017A KR100801820B1 (ko) | 2002-11-19 | 2002-11-19 | 표면수식된 탄소나노튜브를 이용한 패턴 형성방법 |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020070071001A Division KR100821443B1 (ko) | 2007-07-16 | 2007-07-16 | 표면수식된 탄소나노튜브 조성물 |
KR1020070070998A Division KR100801821B1 (ko) | 2007-07-16 | 2007-07-16 | 표면수식된 탄소나노튜브 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20040043638A true KR20040043638A (ko) | 2004-05-24 |
KR100801820B1 KR100801820B1 (ko) | 2008-02-11 |
Family
ID=32226323
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020020072017A KR100801820B1 (ko) | 2002-11-19 | 2002-11-19 | 표면수식된 탄소나노튜브를 이용한 패턴 형성방법 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7008758B2 (ko) |
EP (2) | EP1422563B1 (ko) |
JP (2) | JP4632341B2 (ko) |
KR (1) | KR100801820B1 (ko) |
CN (1) | CN1332879C (ko) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100642719B1 (ko) * | 2004-12-16 | 2006-11-10 | 고려대학교 산학협력단 | 탄소 나노 패턴의 제조방법 및 이에 의해 제조된 탄소 나노 패턴 |
KR100867628B1 (ko) * | 2007-06-04 | 2008-11-10 | 한국표준과학연구원 | 탄소나노튜브의 밀도제어방법과 탄소나노튜브로 만들어진박막의 전기전도율제어방법 |
KR100987993B1 (ko) * | 2007-11-28 | 2010-10-18 | 충남대학교산학협력단 | 전기전도도 및 광 투과율이 우수한 탄소나노튜브 필름, 및이로부터 얻어진 전자 소자 및 광 투과형 전극 |
US8383317B2 (en) | 2003-02-26 | 2013-02-26 | Samsung Electronics Co., Ltd. | Method of making carbon nanotube patterned film or carbon nanotube composite using carbon nanotubes surface-modified with polymerizable moieties |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6723299B1 (en) * | 2001-05-17 | 2004-04-20 | Zyvex Corporation | System and method for manipulating nanotubes |
KR100937085B1 (ko) * | 2002-10-26 | 2010-01-15 | 삼성전자주식회사 | 화학적 자기조립 방법을 이용한 탄소나노튜브 적층 및패턴 형성 방법 |
JP2005041835A (ja) * | 2003-07-24 | 2005-02-17 | Fuji Xerox Co Ltd | カーボンナノチューブ構造体、その製造方法、カーボンナノチューブ転写体および溶液 |
JP2005072209A (ja) * | 2003-08-22 | 2005-03-17 | Fuji Xerox Co Ltd | 抵抗素子、その製造方法およびサーミスタ |
JPWO2005067059A1 (ja) * | 2003-12-26 | 2007-07-26 | 富士ゼロックス株式会社 | 整流素子およびそれを用いた電子回路、並びに整流素子の製造方法 |
CN100386373C (zh) * | 2004-12-10 | 2008-05-07 | 中国科学院长春应用化学研究所 | 碳纳米管与聚乙烯复合材料的原位聚合制备方法 |
US20060189822A1 (en) * | 2005-01-20 | 2006-08-24 | Yoon Seon M | Dispersant for dispersing carbon nanotubes and carbon nanotube composition comprising the same |
US8033501B2 (en) * | 2005-06-10 | 2011-10-11 | The Boeing Company | Method and apparatus for attaching electrically powered seat track cover to through hole seat track design |
WO2008048227A2 (en) * | 2005-08-11 | 2008-04-24 | Kansas State University Research Foundation | Synthetic carbon nanotubes |
CN100391832C (zh) * | 2005-09-29 | 2008-06-04 | 上海交通大学 | 碳纳米管表面化学修饰的方法 |
US7226722B1 (en) * | 2006-01-17 | 2007-06-05 | Eastman Kodak Company | Imaging members with IR-sensitive polymer imageable layer |
WO2008005173A1 (en) * | 2006-06-16 | 2008-01-10 | Dentsply International Inc. | Photopolymerizable and photocleavable resin and low stress composite compositions |
KR100759754B1 (ko) | 2006-06-16 | 2007-10-04 | 한국과학기술연구원 | 분산제 및 공단량체를 이용하여 표면이 개질 된탄소나노튜브, 탄소나노튜브/고분자 복합체 및 이들의 제조방법 |
KR20080033780A (ko) * | 2006-10-13 | 2008-04-17 | 삼성전자주식회사 | 다성분계 탄소나노튜브-고분자 복합체, 이를 형성하기 위한조성물 및 그 제조방법 |
US20080136861A1 (en) * | 2006-12-11 | 2008-06-12 | 3M Innovative Properties Company | Method and apparatus for printing conductive inks |
JP5271922B2 (ja) * | 2007-02-28 | 2013-08-21 | ナショナル・リサーチ・カウンシル・オブ・カナダ | ブロック官能化方法 |
US8470518B2 (en) | 2007-09-14 | 2013-06-25 | E I Du Pont De Nemours And Company | Photosensitive element having reinforcing particles and method for preparing a printing form from the element |
US20090123750A1 (en) * | 2007-11-09 | 2009-05-14 | Chia-Hsun Chen | Method for modifying carbon nanotube |
KR20090105761A (ko) * | 2008-04-03 | 2009-10-07 | 삼성전자주식회사 | 탄소나노튜브 투명 전극 및 그 제조 방법 |
US8058364B2 (en) * | 2008-04-15 | 2011-11-15 | Florida State University Research Foundation | Method for functionalization of nanoscale fibers and nanoscale fiber films |
US20110045274A1 (en) * | 2009-01-28 | 2011-02-24 | Florida State University Research Foundation | Functionalized nanoscale fiber films, composites, and methods for functionalization of nanoscale fiber films |
US8593052B1 (en) * | 2009-12-15 | 2013-11-26 | National Tsing Hua University | Microelectrode array and method for modifying carbon nanotube electrode interface of the same array |
JP5515788B2 (ja) * | 2010-01-28 | 2014-06-11 | 東洋紡株式会社 | カーボンナノチューブシートおよびその製造方法 |
IT1400159B1 (it) * | 2010-03-15 | 2013-05-17 | St Microelectronics Srl | Metodo di fotolitografia ad elevata risoluzione per la realizzazione di nanostrutture, in particolare nella fabbricazione di dispositivi elettronici integrati |
US8916651B2 (en) | 2010-04-20 | 2014-12-23 | Florida State University Research Foundation, Inc. | Composite materials and method for making high-performance carbon nanotube reinforced polymer composites |
US8851440B2 (en) | 2010-09-29 | 2014-10-07 | Velcro Industries B.V. | Releasable hanging system |
JP5826282B2 (ja) * | 2010-11-04 | 2015-12-02 | スリーエム イノベイティブ プロパティズ カンパニー | リン含有酸基及びアルコキシシラン基を含むフッ素化組成物 |
WO2015168411A1 (en) * | 2014-04-30 | 2015-11-05 | The Research Foundation For The State University Of New York | Films and methods of forming films of carbon nanomaterial structures |
US10233082B2 (en) * | 2016-10-14 | 2019-03-19 | International Business Machines Corporation | Functionalized carbon nanotubes |
CN110691823A (zh) * | 2019-08-16 | 2020-01-14 | 福建华彩新材料有限公司 | 一种可自定义图案的感光氧化石墨烯涂层及其制备方法 |
CN111892836B (zh) * | 2020-07-30 | 2022-04-22 | 安徽辅朗光学材料有限公司 | 防静电光固化单体及其制备方法、以及防静电光固化涂料 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3071155D1 (en) * | 1979-12-22 | 1985-11-07 | Ciba Geigy Ag | Compositions containing acrylate and their polymerisation |
US5561026A (en) * | 1992-06-30 | 1996-10-01 | Nippon Oil Co., Ltd. | Photosensitive materials comprising fullerene |
JP2814165B2 (ja) * | 1992-06-30 | 1998-10-22 | 日本石油株式会社 | 感光材料 |
JP2814174B2 (ja) * | 1992-11-30 | 1998-10-22 | 日本石油株式会社 | 感光材料組成物 |
JP3615263B2 (ja) * | 1995-04-13 | 2005-02-02 | 日本化薬株式会社 | フラーレン誘導体、樹脂組成物及びその硬化物 |
WO1997032571A1 (en) * | 1996-03-06 | 1997-09-12 | Hyperion Catalysis International, Inc. | Functionalized nanotubes |
JP4409003B2 (ja) * | 1998-09-24 | 2010-02-03 | 三星エスディアイ株式会社 | フィールドエミッションディスプレイ用エレクトロンエミッタ組成物及びこれを利用したエレクトロンエミッタの製造方法 |
AUPQ064999A0 (en) * | 1999-05-28 | 1999-06-24 | Commonwealth Scientific And Industrial Research Organisation | Patterned carbon nanotube films |
KR20010104960A (ko) * | 2000-05-17 | 2001-11-28 | 오길록 | 전계방출소자용 캐소드 및 그 제조방법 |
JP2001348215A (ja) * | 2000-05-31 | 2001-12-18 | Fuji Xerox Co Ltd | カーボンナノチューブおよび/またはフラーレンの製造方法、並びにその製造装置 |
GB2413123B (en) * | 2001-01-29 | 2005-12-07 | Univ Rice William M | Process for derivatizing carbon nanotubes with diazonium species and compositions thereof |
JP4190292B2 (ja) * | 2001-04-06 | 2008-12-03 | カーネギー−メロン ユニバーシティ | ナノ構造材料の製造方法 |
CN1164486C (zh) * | 2002-04-12 | 2004-09-01 | 上海交通大学 | 操纵碳纳米管选择性取向排布于基底表面的方法 |
JP2004018754A (ja) * | 2002-06-19 | 2004-01-22 | Ebara Corp | ナノ炭素材料含有成形体及びその製造方法 |
-
2002
- 2002-11-19 KR KR1020020072017A patent/KR100801820B1/ko active IP Right Grant
-
2003
- 2003-10-28 EP EP03256824.8A patent/EP1422563B1/en not_active Expired - Lifetime
- 2003-10-28 EP EP11155249.3A patent/EP2325693B1/en not_active Expired - Lifetime
- 2003-11-05 JP JP2003375753A patent/JP4632341B2/ja not_active Expired - Fee Related
- 2003-11-06 CN CNB2003101181699A patent/CN1332879C/zh not_active Expired - Fee Related
- 2003-11-17 US US10/713,254 patent/US7008758B2/en not_active Expired - Lifetime
-
2008
- 2008-05-22 JP JP2008134659A patent/JP5189894B2/ja not_active Expired - Fee Related
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8383317B2 (en) | 2003-02-26 | 2013-02-26 | Samsung Electronics Co., Ltd. | Method of making carbon nanotube patterned film or carbon nanotube composite using carbon nanotubes surface-modified with polymerizable moieties |
KR100642719B1 (ko) * | 2004-12-16 | 2006-11-10 | 고려대학교 산학협력단 | 탄소 나노 패턴의 제조방법 및 이에 의해 제조된 탄소 나노 패턴 |
KR100867628B1 (ko) * | 2007-06-04 | 2008-11-10 | 한국표준과학연구원 | 탄소나노튜브의 밀도제어방법과 탄소나노튜브로 만들어진박막의 전기전도율제어방법 |
KR100987993B1 (ko) * | 2007-11-28 | 2010-10-18 | 충남대학교산학협력단 | 전기전도도 및 광 투과율이 우수한 탄소나노튜브 필름, 및이로부터 얻어진 전자 소자 및 광 투과형 전극 |
Also Published As
Publication number | Publication date |
---|---|
US7008758B2 (en) | 2006-03-07 |
EP2325693A1 (en) | 2011-05-25 |
EP1422563A1 (en) | 2004-05-26 |
EP1422563B1 (en) | 2013-12-11 |
KR100801820B1 (ko) | 2008-02-11 |
JP4632341B2 (ja) | 2011-02-16 |
EP2325693B1 (en) | 2015-04-08 |
JP2004167677A (ja) | 2004-06-17 |
CN1332879C (zh) | 2007-08-22 |
JP2008284685A (ja) | 2008-11-27 |
US20040101634A1 (en) | 2004-05-27 |
CN1502555A (zh) | 2004-06-09 |
JP5189894B2 (ja) | 2013-04-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100801820B1 (ko) | 표면수식된 탄소나노튜브를 이용한 패턴 형성방법 | |
JP4384554B2 (ja) | 感光性金属ナノ粒子およびこれを含む感光性組成物、ならびにその感光性組成物を用いた導電性パターン形成方法 | |
KR20040106947A (ko) | 금속나노입자 및 카본나노튜브를 이용한 도전성 필름 또는패턴 형성방법 | |
JP3503546B2 (ja) | 金属パターンの形成方法 | |
EP1789849B1 (en) | Use of methanofullerene derivatives as resist materials and method for forming a resist layer | |
JP5815762B2 (ja) | 電子放出源形成用組成物、およびこれを用いた電子放出源の製造方法 | |
WO2012111694A1 (ja) | ナノ構造体を表面に備える基板の製造方法 | |
JP2007182547A (ja) | 高導電性インク組成物および金属導電パターンの作製方法 | |
JP2008107795A (ja) | 有機層パターン形成方法、これにより形成された有機層、およびこれを含む有機メモリ素子 | |
JP2012051060A (ja) | 金属ナノ構造体を表面に備える基板及びその製造方法 | |
KR100801821B1 (ko) | 표면수식된 탄소나노튜브 | |
KR100821443B1 (ko) | 표면수식된 탄소나노튜브 조성물 | |
JP2878654B2 (ja) | 感光性樹脂組成物 | |
KR20050004360A (ko) | 포토리소그래피를 이용한 탄소 나노튜브 절단방법 | |
Zhang et al. | Chemical bonding of multiwalled carbon nanotubes to polydimethylsiloxanes and modification of the photoinitiator system for microstereolithography processing | |
JP2010040521A (ja) | 電子放出源用ペーストおよびこれを用いた電子放出源ならびに電子放出素子 | |
JP2008130354A (ja) | 電子放出源用ペースト | |
KR100642719B1 (ko) | 탄소 나노 패턴의 제조방법 및 이에 의해 제조된 탄소 나노 패턴 | |
JP5584872B2 (ja) | 高分子ナノ構造体を表面に備える基板及びその製造方法 | |
JP2009289712A (ja) | 電子放出源用ペースト | |
KR20150031517A (ko) | 전자빔 조사공정을 도입한 감광성 은나노 페이스트 조성물의 제조방법 | |
JP2005277213A (ja) | 導電性パターン及び導電性パターン形成方法 | |
JPS6374049A (ja) | 放射線感応性レジスト材およびパタ−ン形成方法 | |
JPH0377987B2 (ko) | ||
JPH052141B2 (ko) |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
A107 | Divisional application of patent | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20121210 Year of fee payment: 6 |
|
FPAY | Annual fee payment |
Payment date: 20131217 Year of fee payment: 7 |
|
FPAY | Annual fee payment |
Payment date: 20141224 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20151217 Year of fee payment: 9 |
|
FPAY | Annual fee payment |
Payment date: 20161220 Year of fee payment: 10 |
|
FPAY | Annual fee payment |
Payment date: 20181218 Year of fee payment: 12 |
|
FPAY | Annual fee payment |
Payment date: 20191216 Year of fee payment: 13 |