IT1400159B1 - Metodo di fotolitografia ad elevata risoluzione per la realizzazione di nanostrutture, in particolare nella fabbricazione di dispositivi elettronici integrati - Google Patents

Metodo di fotolitografia ad elevata risoluzione per la realizzazione di nanostrutture, in particolare nella fabbricazione di dispositivi elettronici integrati

Info

Publication number
IT1400159B1
IT1400159B1 ITTO2010A000193A ITTO20100193A IT1400159B1 IT 1400159 B1 IT1400159 B1 IT 1400159B1 IT TO2010A000193 A ITTO2010A000193 A IT TO2010A000193A IT TO20100193 A ITTO20100193 A IT TO20100193A IT 1400159 B1 IT1400159 B1 IT 1400159B1
Authority
IT
Italy
Prior art keywords
photolytography
nanostructures
resolution
manufacture
construction
Prior art date
Application number
ITTO2010A000193A
Other languages
English (en)
Inventor
Davide Giuseppe Patti
Daria Puccia
Original Assignee
St Microelectronics Srl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by St Microelectronics Srl filed Critical St Microelectronics Srl
Priority to ITTO2010A000193A priority Critical patent/IT1400159B1/it
Priority to US13/047,320 priority patent/US8715915B2/en
Publication of ITTO20100193A1 publication Critical patent/ITTO20100193A1/it
Application granted granted Critical
Publication of IT1400159B1 publication Critical patent/IT1400159B1/it

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/093—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antistatic means, e.g. for charge depletion
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/164—Coating processes; Apparatus therefor using electric, electrostatic or magnetic means; powder coating
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/167—Coating processes; Apparatus therefor from the gas phase, by plasma deposition

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
ITTO2010A000193A 2010-03-15 2010-03-15 Metodo di fotolitografia ad elevata risoluzione per la realizzazione di nanostrutture, in particolare nella fabbricazione di dispositivi elettronici integrati IT1400159B1 (it)

Priority Applications (2)

Application Number Priority Date Filing Date Title
ITTO2010A000193A IT1400159B1 (it) 2010-03-15 2010-03-15 Metodo di fotolitografia ad elevata risoluzione per la realizzazione di nanostrutture, in particolare nella fabbricazione di dispositivi elettronici integrati
US13/047,320 US8715915B2 (en) 2010-03-15 2011-03-14 High-resolution photolithographic method for forming nanostructures, in particular in the manufacture of integrated electronic devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ITTO2010A000193A IT1400159B1 (it) 2010-03-15 2010-03-15 Metodo di fotolitografia ad elevata risoluzione per la realizzazione di nanostrutture, in particolare nella fabbricazione di dispositivi elettronici integrati

Publications (2)

Publication Number Publication Date
ITTO20100193A1 ITTO20100193A1 (it) 2011-09-16
IT1400159B1 true IT1400159B1 (it) 2013-05-17

Family

ID=42829482

Family Applications (1)

Application Number Title Priority Date Filing Date
ITTO2010A000193A IT1400159B1 (it) 2010-03-15 2010-03-15 Metodo di fotolitografia ad elevata risoluzione per la realizzazione di nanostrutture, in particolare nella fabbricazione di dispositivi elettronici integrati

Country Status (2)

Country Link
US (1) US8715915B2 (it)
IT (1) IT1400159B1 (it)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102014216240A1 (de) * 2014-08-15 2016-02-18 Carl Zeiss Smt Gmbh Reflektives optisches Element

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100801820B1 (ko) * 2002-11-19 2008-02-11 삼성전자주식회사 표면수식된 탄소나노튜브를 이용한 패턴 형성방법
US20050233263A1 (en) * 2004-04-20 2005-10-20 Applied Materials, Inc. Growth of carbon nanotubes at low temperature
US7990037B2 (en) * 2005-11-28 2011-08-02 Megica Corporation Carbon nanotube circuit component structure
JP2007156111A (ja) * 2005-12-05 2007-06-21 Fujifilm Corp 感光性組成物、パターン形成材料、感光性積層体、及びパターン形成方法
WO2007116434A1 (ja) * 2006-03-30 2007-10-18 Fujitsu Limited カーボンナノチューブの製造方法
KR100811266B1 (ko) * 2006-09-01 2008-03-07 주식회사 하이닉스반도체 하드 마스크를 이용한 선택적 식각 방법 및 이를 이용한메모리 소자의 소자분리 형성 방법
US7956345B2 (en) * 2007-01-24 2011-06-07 Stmicroelectronics Asia Pacific Pte. Ltd. CNT devices, low-temperature fabrication of CNT and CNT photo-resists

Also Published As

Publication number Publication date
US20110287363A1 (en) 2011-11-24
US8715915B2 (en) 2014-05-06
ITTO20100193A1 (it) 2011-09-16

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