KR20030051418A - 화학 증폭형 포지티브형 레지스트 조성물 - Google Patents
화학 증폭형 포지티브형 레지스트 조성물 Download PDFInfo
- Publication number
- KR20030051418A KR20030051418A KR1020027012717A KR20027012717A KR20030051418A KR 20030051418 A KR20030051418 A KR 20030051418A KR 1020027012717 A KR1020027012717 A KR 1020027012717A KR 20027012717 A KR20027012717 A KR 20027012717A KR 20030051418 A KR20030051418 A KR 20030051418A
- Authority
- KR
- South Korea
- Prior art keywords
- acid
- polymerized unit
- group
- adamantyl
- acrylate
- Prior art date
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
- C08F220/28—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
- C08F220/281—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety and containing only one oxygen, e.g. furfuryl (meth)acrylate or 2-methoxyethyl (meth)acrylate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
- Y10S430/111—Polymer of unsaturated acid or ester
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical & Material Sciences (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Physics & Mathematics (AREA)
- Materials For Photolithography (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Polymerisation Methods In General (AREA)
Abstract
Description
실시예 번호 | 수지 | 감도(mJ/cm2)Eth Eo | 노광 관용도(Eo/Eth) | 해상도(㎛) |
실시예 1 | A | 16 50 | 3.0 | 0.16 |
실시예 2 | A/B=1/1(중량비) | 16 34 | 2.1 | 0.18 |
비교 실시예 | C | 15 29 | 1.9 | 0.22 |
Claims (8)
- 3-하이드록시-1-아다만틸 아크릴레이트 중합 단위 및 3,5-디하이드록시-1-아다만틸 (메트)아크릴레이트 중합 단위로부터 선택된 하나 이상의 중합 단위, 하이드록시스티렌 중합 단위 및 산에 대해 불안정한 그룹을 갖는 중합 단위를 포함하고, 그 자신은 알칼리에 불용성 또는 난용성이지만, 산에 대해 불안정한 그룹이 산의 작용에 의해 해리된 후에 알칼리에 가용성으로 되는 수지, 및 산 발생제를 함유함을 특징으로 하는, 화학 증폭형 포지티브형 레지스트 조성물.
- 제1항에 있어서, 산에 대해 불안정한 그룹을 갖는 중합 단위가 화학식 V의 중합 단위인 조성물.화학식 V위의 화학식 V에서,Q는 산에 대해 불안정한 그룹이다.
- 제2항에 있어서, 산에 대해 불안정한 그룹 Q가 3급-부틸, 3급-부톡시카보닐 또는 화학식 III의 그룹인 조성물.화학식 III위의 화학식 III에서,R1은 탄소수 1 내지 4의 알킬이며,R2는 탄소수 1 내지 6의 알킬 또는 탄소수 5 내지 7의 사이클로알킬이거나, R1과 R2는 함께 트리메틸렌 쇄 또는 테트라메틸렌 쇄를 형성한다.
- 제3항에 있어서, 산에 대해 불안정한 그룹 Q가 화학식 III의 그룹(여기서, R1은 탄소수 1 내지 4의 알킬이고, R2는 탄소수 1 내지 6의 알킬 또는 탄소수 5 내지 7의 사이클로알킬이다)인 조성물.
- 제1항 내지 제4항 중의 어느 한 항에 있어서, 3-하이드록시-1-아다만틸 아크릴레이트 중합 단위 및 3,5-디하이드록시-1-아다만틸 (메트)아크릴레이트 중합 단위로부터 선택된 하나 이상의 중합 단위와 하이드록시스티렌 중합 단위의 총량이, 전체 수지를 기준으로 하여, 50mol% 이상인 조성물.
- 제1항 내지 제5항 중의 어느 한 항에 있어서, 3-하이드록시-1-아다만틸 아크릴레이트 중합 단위 및 3,5-디하이드록시-1-아다만틸 (메트)아크릴레이트 중합 단위로부터 선택된 하나 이상의 중합 단위와 하이드록시스티렌 중합 단위의 몰 비가 1:99 내지 20:80의 범위인 조성물.
- 제1항 내지 제6항 중의 어느 한 항에 있어서, 조성물 중의 고체 총 함량을 기준으로 하여, 수지 80 내지 99.8중량%와 산 발생제 0.1 내지 20중량%를 함유하는 조성물.
- 제1항 내지 제7항 중의 어느 한 항에 있어서, 질소 함유 염기성 유기 화합물을 켄쳐(quencher)로서 함유하는 조성물.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2000-00088788 | 2000-03-28 | ||
JP2000088788A JP4329214B2 (ja) | 2000-03-28 | 2000-03-28 | 化学増幅型ポジ型レジスト組成物 |
PCT/JP2001/002246 WO2001073512A1 (fr) | 2000-03-28 | 2001-03-21 | Composition de resist positif du type a amplification chimique |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20030051418A true KR20030051418A (ko) | 2003-06-25 |
KR100750077B1 KR100750077B1 (ko) | 2007-08-21 |
Family
ID=18604616
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020027012717A KR100750077B1 (ko) | 2000-03-28 | 2001-03-21 | 화학 증폭형 포지티브형 내식막 조성물 |
Country Status (6)
Country | Link |
---|---|
US (1) | US6846609B2 (ko) |
JP (1) | JP4329214B2 (ko) |
KR (1) | KR100750077B1 (ko) |
AU (1) | AU4274001A (ko) |
TW (1) | TWI243286B (ko) |
WO (1) | WO2001073512A1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100881304B1 (ko) * | 2005-03-04 | 2009-02-03 | 도오꾜오까고오교 가부시끼가이샤 | 포지티브형 레지스트 조성물 및 레지스트 패턴 형성 방법 |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4329214B2 (ja) | 2000-03-28 | 2009-09-09 | 住友化学株式会社 | 化学増幅型ポジ型レジスト組成物 |
JP4595275B2 (ja) * | 2001-09-28 | 2010-12-08 | 住友化学株式会社 | 化学増幅型ポジ型レジスト組成物 |
JP3895224B2 (ja) * | 2001-12-03 | 2007-03-22 | 東京応化工業株式会社 | ポジ型レジスト組成物及びそれを用いたレジストパターン形成方法 |
KR20050094828A (ko) * | 2002-12-26 | 2005-09-28 | 도오꾜오까고오교 가부시끼가이샤 | 포지티브형 레지스트 조성물 및 레지스트 패턴 형성 방법 |
JP2004333548A (ja) * | 2003-04-30 | 2004-11-25 | Tokyo Ohka Kogyo Co Ltd | ポジ型ホトレジスト組成物およびレジストパターン形成方法 |
JP4152810B2 (ja) | 2003-06-13 | 2008-09-17 | 東京応化工業株式会社 | ポジ型レジスト組成物およびレジストパターン形成方法 |
JP2005031233A (ja) * | 2003-07-09 | 2005-02-03 | Tokyo Ohka Kogyo Co Ltd | レジスト組成物、積層体、及びレジストパターン形成方法 |
TWI316645B (en) * | 2003-09-18 | 2009-11-01 | Tokyo Ohka Kogyo Co Ltd | Positive resist composition and resist pattern formation method |
WO2005031464A1 (ja) * | 2003-09-25 | 2005-04-07 | Tokyo Ohka Kogyo Co., Ltd. | 低加速電子線用ポジ型レジスト組成物、レジスト積層体およびパターン形成方法 |
JP4308051B2 (ja) * | 2004-03-22 | 2009-08-05 | 富士フイルム株式会社 | 感光性組成物及びそれを用いたパターン形成方法 |
JP2005326491A (ja) * | 2004-05-12 | 2005-11-24 | Tokyo Ohka Kogyo Co Ltd | ポジ型レジスト組成物及びレジストパターン形成方法 |
JP2005350609A (ja) * | 2004-06-11 | 2005-12-22 | Daicel Chem Ind Ltd | 側鎖にアセタール構造を有する高分子化合物及びその製造法 |
JP4979915B2 (ja) * | 2005-09-09 | 2012-07-18 | 東京応化工業株式会社 | 高分子化合物、ネガ型レジスト組成物およびレジストパターン形成方法 |
JP5230400B2 (ja) * | 2008-12-19 | 2013-07-10 | 東京応化工業株式会社 | 樹脂の製造方法 |
KR101400131B1 (ko) * | 2013-02-22 | 2014-05-27 | 금호석유화학주식회사 | 레지스트용 중합체 및 이를 포함하는 레지스트 조성물 |
FI124754B (fi) | 2013-10-16 | 2015-01-15 | Wärtsilä Finland Oy | Menetelmä polttomoottorin käyttämiseksi |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08101508A (ja) | 1994-09-30 | 1996-04-16 | Nippon Zeon Co Ltd | レジスト組成物 |
DE69612182T3 (de) * | 1996-02-09 | 2005-08-04 | Wako Pure Chemical Industries, Ltd. | Polymer und Resistmaterial |
KR100219573B1 (ko) * | 1996-08-05 | 1999-09-01 | 윤종용 | 감광성 고분자 화합물 및 이를 포함하는 포토레지스트 조성물 |
JP3702590B2 (ja) | 1997-07-11 | 2005-10-05 | Jsr株式会社 | 感放射線性樹脂組成物 |
JP3948795B2 (ja) | 1997-09-30 | 2007-07-25 | ダイセル化学工業株式会社 | 放射線感光材料及びそれを用いたパターン形成方法 |
CN1190706C (zh) * | 1998-08-26 | 2005-02-23 | 住友化学工业株式会社 | 一种化学增强型正光刻胶组合物 |
JP3785846B2 (ja) * | 1999-02-05 | 2006-06-14 | 住友化学株式会社 | 化学増幅型ポジ型レジスト組成物 |
JP4366766B2 (ja) * | 1999-04-30 | 2009-11-18 | 住友化学株式会社 | O−置換ビニルフェノール単位を有する重合体及びそれのレジストへの使用 |
JP4127937B2 (ja) | 1999-08-27 | 2008-07-30 | 富士通株式会社 | レジスト組成物及びレジストパターンの形成方法 |
JP4453138B2 (ja) * | 1999-12-22 | 2010-04-21 | 住友化学株式会社 | 化学増幅型ポジ型レジスト組成物 |
TW573225B (en) * | 2000-02-28 | 2004-01-21 | Sumitomo Chemical Co | Chemically amplified positive resist composition |
JP4329214B2 (ja) | 2000-03-28 | 2009-09-09 | 住友化学株式会社 | 化学増幅型ポジ型レジスト組成物 |
-
2000
- 2000-03-28 JP JP2000088788A patent/JP4329214B2/ja not_active Expired - Lifetime
-
2001
- 2001-03-21 AU AU42740/01A patent/AU4274001A/en not_active Abandoned
- 2001-03-21 US US10/239,896 patent/US6846609B2/en not_active Expired - Lifetime
- 2001-03-21 WO PCT/JP2001/002246 patent/WO2001073512A1/ja active Application Filing
- 2001-03-21 KR KR1020027012717A patent/KR100750077B1/ko active IP Right Grant
- 2001-03-23 TW TW090106941A patent/TWI243286B/zh not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100881304B1 (ko) * | 2005-03-04 | 2009-02-03 | 도오꾜오까고오교 가부시끼가이샤 | 포지티브형 레지스트 조성물 및 레지스트 패턴 형성 방법 |
Also Published As
Publication number | Publication date |
---|---|
TWI243286B (en) | 2005-11-11 |
US6846609B2 (en) | 2005-01-25 |
US20030113661A1 (en) | 2003-06-19 |
JP2001272782A (ja) | 2001-10-05 |
KR100750077B1 (ko) | 2007-08-21 |
WO2001073512A1 (fr) | 2001-10-04 |
JP4329214B2 (ja) | 2009-09-09 |
AU4274001A (en) | 2001-10-08 |
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