KR100858831B1 - 화학 증폭형 포지티브 내식막 조성물 - Google Patents
화학 증폭형 포지티브 내식막 조성물 Download PDFInfo
- Publication number
- KR100858831B1 KR100858831B1 KR1020020002782A KR20020002782A KR100858831B1 KR 100858831 B1 KR100858831 B1 KR 100858831B1 KR 1020020002782 A KR1020020002782 A KR 1020020002782A KR 20020002782 A KR20020002782 A KR 20020002782A KR 100858831 B1 KR100858831 B1 KR 100858831B1
- Authority
- KR
- South Korea
- Prior art keywords
- resist composition
- ethyl
- positive resist
- resin
- acid
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
- Y10S430/111—Polymer of unsaturated acid or ester
Abstract
Description
수지 혼합물 | 13,5부 | |
산 발생제 | 화학식 13의 산 발생제 | 0.45부 |
화학식 14의 산 발생제 | 0.45부 | |
켄칭제 | 디이소프로필아닐린 | 0.055부 |
용매 | 프로필렌 글리콜 모노메틸 에테르 아세테이트 | 90부 |
실시예 번호 | PPG의 분자량 |
실시예 1 | 1000 |
실시예 2 | 2000 |
실시예 3 | 3000 |
비교 실시예 1 | 첨가하지 않음 |
실시예 번호 | PPG의 분자량 | 감광도(mJ/cm2) | 해상도 (㎛) | 스컴의 존재 | |
Eth | Eo | ||||
실시예 1 | 1,000 | 11 | 32 | 0.13 | ○ |
실시예 2 | 2,000 | 11 | 32 | 0.13 | ○ |
실시예 3 | 3,000 | 11 | 32 | 0.13 | ○ |
비교 실시예 1 | 11 | 32 | 0.13 | × |
Claims (4)
- 하이드록시스티렌으로부터 유도된 중합 단위와 2-에틸-2-아다만틸 (메트)아크릴레이트로부터 유도된 중합 단위를 갖고 그 자신은 알칼리에 불용성이거나 난용성이지만 산의 작용에 의해 산에 불안정한 그룹이 해리된 후에는 알칼리 가용성이 되는 수지,감방사선성 산 발생제 및중량 평균 분자량이 500 내지 5000인 폴리프로필렌 글리콜을 포함하는, 화학 증폭형 포지티브 내식막 조성물.
- 제1항에 있어서, 폴리프로필렌 글리콜의 함량이 내식막 조성물 중의 총 고형분의 0.1 내지 5중량%인, 화학 증폭형 포지티브 내식막 조성물.
- 삭제
- 제1항에 있어서, 감방사선성 산 발생제가 오늄 염 화합물, 유기 할로겐 화합물, 설폰 화합물 및 설포네이트 화합물로 이루어진 그룹으로부터 선택된 하나 이상의 화합물을 함유하는, 화학 증폭형 포지티브 내식막 조성물.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001011291 | 2001-01-19 | ||
JPJP-P-2001-00011291 | 2001-01-19 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20020062204A KR20020062204A (ko) | 2002-07-25 |
KR100858831B1 true KR100858831B1 (ko) | 2008-09-17 |
Family
ID=18878442
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020020002782A KR100858831B1 (ko) | 2001-01-19 | 2002-01-17 | 화학 증폭형 포지티브 내식막 조성물 |
Country Status (6)
Country | Link |
---|---|
US (1) | US6953651B2 (ko) |
EP (1) | EP1225479B1 (ko) |
KR (1) | KR100858831B1 (ko) |
CN (1) | CN1321351C (ko) |
SG (1) | SG105527A1 (ko) |
TW (1) | TW538316B (ko) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4595275B2 (ja) * | 2001-09-28 | 2010-12-08 | 住友化学株式会社 | 化学増幅型ポジ型レジスト組成物 |
US7776505B2 (en) * | 2001-11-05 | 2010-08-17 | The University Of North Carolina At Charlotte | High resolution resists for next generation lithographies |
JP4281326B2 (ja) | 2002-07-25 | 2009-06-17 | 住友化学株式会社 | 化学増幅型ポジ型レジスト組成物 |
JP2004333548A (ja) | 2003-04-30 | 2004-11-25 | Tokyo Ohka Kogyo Co Ltd | ポジ型ホトレジスト組成物およびレジストパターン形成方法 |
TWI361948B (en) * | 2003-05-23 | 2012-04-11 | Sumitomo Chemical Co | Coloring photosensitive resin composition |
JP4152810B2 (ja) * | 2003-06-13 | 2008-09-17 | 東京応化工業株式会社 | ポジ型レジスト組成物およびレジストパターン形成方法 |
US7361447B2 (en) | 2003-07-30 | 2008-04-22 | Hynix Semiconductor Inc. | Photoresist polymer and photoresist composition containing the same |
JP4505357B2 (ja) * | 2005-03-16 | 2010-07-21 | 富士フイルム株式会社 | 感光性組成物、該感光性組成物に用いる化合物及び該感光性組成物を用いたパターン形成方法 |
WO2009152276A2 (en) * | 2008-06-10 | 2009-12-17 | University Of North Carolina At Charlotte | Photoacid generators and lithographic resists comprising the same |
TWI461850B (zh) * | 2008-12-02 | 2014-11-21 | Sumitomo Chemical Co | 阻劑組成物 |
US8808960B2 (en) * | 2009-03-11 | 2014-08-19 | Sumitomo Chemical Company, Limited | Compound and chemically amplified positive resist composition |
US8614047B2 (en) * | 2011-08-26 | 2013-12-24 | International Business Machines Corporation | Photodecomposable bases and photoresist compositions |
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EP0789279A1 (en) * | 1996-02-09 | 1997-08-13 | Wako Pure Chemical Industries Ltd | Polymer and resist material |
KR19990045654A (ko) * | 1997-11-28 | 1999-06-25 | 사사키 요시오 | 포지티브형 감광성 수지 조성물 및 레지스트 패턴의 형성 방법 |
JPH11352695A (ja) * | 1998-06-11 | 1999-12-24 | Sumitomo Chem Co Ltd | 狭分散性重合体を用いたポジ型レジスト組成物 |
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KR100253017B1 (ko) * | 1995-12-21 | 2000-06-01 | 다나까 모또아끼 | 중합체 조성물 및 레지스트 재료 |
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-
2002
- 2002-01-10 TW TW091100224A patent/TW538316B/zh not_active IP Right Cessation
- 2002-01-11 SG SG200200217A patent/SG105527A1/en unknown
- 2002-01-16 CN CNB021018634A patent/CN1321351C/zh not_active Expired - Fee Related
- 2002-01-17 EP EP02001028A patent/EP1225479B1/en not_active Expired - Lifetime
- 2002-01-17 KR KR1020020002782A patent/KR100858831B1/ko active IP Right Grant
- 2002-01-17 US US10/046,742 patent/US6953651B2/en not_active Expired - Lifetime
Patent Citations (9)
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KR100253017B1 (ko) * | 1995-12-21 | 2000-06-01 | 다나까 모또아끼 | 중합체 조성물 및 레지스트 재료 |
EP0789279A1 (en) * | 1996-02-09 | 1997-08-13 | Wako Pure Chemical Industries Ltd | Polymer and resist material |
KR19990045654A (ko) * | 1997-11-28 | 1999-06-25 | 사사키 요시오 | 포지티브형 감광성 수지 조성물 및 레지스트 패턴의 형성 방법 |
JP2000029220A (ja) * | 1998-05-08 | 2000-01-28 | Sumitomo Chem Co Ltd | フォトレジスト組成物 |
JPH11352695A (ja) * | 1998-06-11 | 1999-12-24 | Sumitomo Chem Co Ltd | 狭分散性重合体を用いたポジ型レジスト組成物 |
JP2000026535A (ja) * | 1998-07-09 | 2000-01-25 | Sumitomo Chem Co Ltd | 狭分散性重合体の製造方法、狭分散性重合体及びそれのレジストへの適用 |
KR20000011988A (ko) * | 1998-07-27 | 2000-02-25 | 무네유키 가코우 | 포지티브 감광성 조성물 |
KR20000076531A (ko) * | 1999-01-28 | 2000-12-26 | 무네유키 가코우 | 포지티브형 실리콘 함유의 감광성 조성물 |
KR20000077438A (ko) * | 1999-05-26 | 2000-12-26 | 무네유키 가코우 | 원자외선 노광용 포지티브 포토레지스트 조성물 |
Also Published As
Publication number | Publication date |
---|---|
CN1366212A (zh) | 2002-08-28 |
CN1321351C (zh) | 2007-06-13 |
EP1225479A3 (en) | 2005-01-05 |
KR20020062204A (ko) | 2002-07-25 |
TW538316B (en) | 2003-06-21 |
SG105527A1 (en) | 2004-08-27 |
US6953651B2 (en) | 2005-10-11 |
EP1225479A2 (en) | 2002-07-24 |
US20020147259A1 (en) | 2002-10-10 |
EP1225479B1 (en) | 2012-12-05 |
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