KR20030027302A - 저유전율 절연막을 사용하는 박막 트랜지스터 기판 및 그제조 방법 - Google Patents

저유전율 절연막을 사용하는 박막 트랜지스터 기판 및 그제조 방법 Download PDF

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Publication number
KR20030027302A
KR20030027302A KR1020010060442A KR20010060442A KR20030027302A KR 20030027302 A KR20030027302 A KR 20030027302A KR 1020010060442 A KR1020010060442 A KR 1020010060442A KR 20010060442 A KR20010060442 A KR 20010060442A KR 20030027302 A KR20030027302 A KR 20030027302A
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KR
South Korea
Prior art keywords
gate
film
layer
electrode
pattern
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Ceased
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KR1020010060442A
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English (en)
Korean (ko)
Inventor
홍완식
최준후
김상갑
정관욱
정규하
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삼성전자주식회사
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Priority to KR1020010060442A priority Critical patent/KR20030027302A/ko
Priority to PCT/KR2001/001896 priority patent/WO2003036376A1/en
Priority to CNB2006100088484A priority patent/CN100517729C/zh
Priority to JP2003538811A priority patent/JP2005506711A/ja
Priority to CNB018216463A priority patent/CN100495181C/zh
Priority to US10/083,261 priority patent/US7095460B2/en
Priority to JP2002049861A priority patent/JP2002353465A/ja
Publication of KR20030027302A publication Critical patent/KR20030027302A/ko
Priority to US11/436,073 priority patent/US7615783B2/en
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133357—Planarisation layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136231—Active matrix addressed cells for reducing the number of lithographic steps
    • G02F1/136236—Active matrix addressed cells for reducing the number of lithographic steps using a grey or half tone lithographic process
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/42—Materials having a particular dielectric constant

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
KR1020010060442A 2001-02-26 2001-09-28 저유전율 절연막을 사용하는 박막 트랜지스터 기판 및 그제조 방법 Ceased KR20030027302A (ko)

Priority Applications (8)

Application Number Priority Date Filing Date Title
KR1020010060442A KR20030027302A (ko) 2001-09-28 2001-09-28 저유전율 절연막을 사용하는 박막 트랜지스터 기판 및 그제조 방법
PCT/KR2001/001896 WO2003036376A1 (en) 2001-09-28 2001-11-07 A thin film transistor substrate of using insulating layers having low dielectric constant and a method of manufacturing the same
CNB2006100088484A CN100517729C (zh) 2001-09-28 2001-11-07 薄膜晶体管衬底及其制造方法
JP2003538811A JP2005506711A (ja) 2001-09-28 2001-11-07 低誘電率絶縁膜を使用する薄膜トランジスタ基板及びその製造方法
CNB018216463A CN100495181C (zh) 2001-09-28 2001-11-07 使用低介电常数绝缘层的薄膜晶体管衬底及其制造方法
US10/083,261 US7095460B2 (en) 2001-02-26 2002-02-25 Thin film transistor array substrate using low dielectric insulating layer and method of fabricating the same
JP2002049861A JP2002353465A (ja) 2001-02-26 2002-02-26 低誘電率絶縁膜を使用する薄膜トランジスタ基板及びその製造方法
US11/436,073 US7615783B2 (en) 2001-02-26 2006-05-17 Thin film transistor array substrate using low dielectric insulating layer and method of fabricating the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020010060442A KR20030027302A (ko) 2001-09-28 2001-09-28 저유전율 절연막을 사용하는 박막 트랜지스터 기판 및 그제조 방법

Publications (1)

Publication Number Publication Date
KR20030027302A true KR20030027302A (ko) 2003-04-07

Family

ID=36947158

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020010060442A Ceased KR20030027302A (ko) 2001-02-26 2001-09-28 저유전율 절연막을 사용하는 박막 트랜지스터 기판 및 그제조 방법

Country Status (4)

Country Link
JP (1) JP2005506711A (https=)
KR (1) KR20030027302A (https=)
CN (2) CN100517729C (https=)
WO (1) WO2003036376A1 (https=)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100796794B1 (ko) * 2001-10-17 2008-01-22 삼성전자주식회사 다결정 규소 박막 트랜지스터 기판 및 그 제조 방법
KR100980015B1 (ko) * 2003-08-19 2010-09-03 삼성전자주식회사 박막 트랜지스터 표시판 및 그 제조 방법
KR100980020B1 (ko) * 2003-08-28 2010-09-03 삼성전자주식회사 박막 트랜지스터 표시판과 그 제조 방법
KR100980014B1 (ko) * 2003-08-11 2010-09-03 삼성전자주식회사 박막 트랜지스터 표시판과 그 제조 방법
US7960732B2 (en) 2003-07-02 2011-06-14 Samsung Electronics Co., Ltd. Thin film transistor array panel and manufacturing method thereof
KR101107682B1 (ko) * 2004-12-31 2012-01-25 엘지디스플레이 주식회사 표시 소자용 박막 트랜지스터 기판 및 그 제조 방법
US8207534B2 (en) 2004-10-26 2012-06-26 Samsung Electronics Co., Ltd. Thin film transistor array panel and manufacturing method thereof
KR20220146385A (ko) * 2008-11-07 2022-11-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시장치

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7095460B2 (en) 2001-02-26 2006-08-22 Samsung Electronics Co., Ltd. Thin film transistor array substrate using low dielectric insulating layer and method of fabricating the same
TW200710471A (en) * 2005-07-20 2007-03-16 Samsung Electronics Co Ltd Array substrate for display device
KR101251995B1 (ko) * 2006-01-27 2013-04-08 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
CN100426109C (zh) * 2006-12-13 2008-10-15 友达光电股份有限公司 液晶显示器的像素阵列结构及其制造方法
JP2009204724A (ja) * 2008-02-26 2009-09-10 Toshiba Mobile Display Co Ltd 表示素子
CN101582431B (zh) * 2009-07-01 2011-10-05 友达光电股份有限公司 薄膜晶体管阵列基板及其制造方法
WO2011043217A1 (en) * 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device including the same
KR101506304B1 (ko) 2009-11-27 2015-03-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작방법
KR101406382B1 (ko) * 2011-03-17 2014-06-13 이윤형 화학증폭형 포지티브 감광형 유기절연막 조성물 및 이를 이용한 유기절연막의 형성방법
US8988624B2 (en) * 2011-06-23 2015-03-24 Apple Inc. Display pixel having oxide thin-film transistor (TFT) with reduced loading
KR20140032155A (ko) * 2012-09-06 2014-03-14 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 그 제조방법
US9530801B2 (en) * 2014-01-13 2016-12-27 Apple Inc. Display circuitry with improved transmittance and reduced coupling capacitance
KR102267126B1 (ko) 2014-12-19 2021-06-21 삼성디스플레이 주식회사 디스플레이 패널 및 이의 제조 방법
CN104698630B (zh) * 2015-03-30 2017-12-08 合肥京东方光电科技有限公司 阵列基板及显示装置
CN105161504B (zh) * 2015-09-22 2019-01-04 京东方科技集团股份有限公司 阵列基板及其制作方法、显示装置
CN109037245A (zh) * 2018-08-03 2018-12-18 惠科股份有限公司 显示装置及显示面板的制造方法
TWI753547B (zh) * 2019-09-27 2022-01-21 台灣積體電路製造股份有限公司 圖像感測器及其製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5053844A (en) * 1988-05-13 1991-10-01 Ricoh Company, Ltd. Amorphous silicon photosensor
JPH03149884A (ja) * 1989-11-07 1991-06-26 Toppan Printing Co Ltd 薄膜トランジスタ
JP3226223B2 (ja) * 1990-07-12 2001-11-05 株式会社東芝 薄膜トランジスタアレイ装置および液晶表示装置
JPH0887034A (ja) * 1994-09-16 1996-04-02 Toshiba Corp 液晶表示装置およびその製造方法
US5641974A (en) * 1995-06-06 1997-06-24 Ois Optical Imaging Systems, Inc. LCD with bus lines overlapped by pixel electrodes and photo-imageable insulating layer therebetween
JPH10228035A (ja) * 1996-12-10 1998-08-25 Fujitsu Ltd 液晶表示装置及びその製造方法

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100796794B1 (ko) * 2001-10-17 2008-01-22 삼성전자주식회사 다결정 규소 박막 트랜지스터 기판 및 그 제조 방법
US7960732B2 (en) 2003-07-02 2011-06-14 Samsung Electronics Co., Ltd. Thin film transistor array panel and manufacturing method thereof
KR100980014B1 (ko) * 2003-08-11 2010-09-03 삼성전자주식회사 박막 트랜지스터 표시판과 그 제조 방법
KR100980015B1 (ko) * 2003-08-19 2010-09-03 삼성전자주식회사 박막 트랜지스터 표시판 및 그 제조 방법
KR100980020B1 (ko) * 2003-08-28 2010-09-03 삼성전자주식회사 박막 트랜지스터 표시판과 그 제조 방법
US8207534B2 (en) 2004-10-26 2012-06-26 Samsung Electronics Co., Ltd. Thin film transistor array panel and manufacturing method thereof
US8288771B2 (en) 2004-10-26 2012-10-16 Samsung Electonics Co., Ltd. Thin film transistor array panel and manufacturing method thereof
US8455277B2 (en) 2004-10-26 2013-06-04 Samsung Display Co., Ltd. Thin film transistor array panel and manufacturing method thereof
KR101107682B1 (ko) * 2004-12-31 2012-01-25 엘지디스플레이 주식회사 표시 소자용 박막 트랜지스터 기판 및 그 제조 방법
KR20220146385A (ko) * 2008-11-07 2022-11-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시장치
US12324189B2 (en) 2008-11-07 2025-06-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof

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JP2005506711A (ja) 2005-03-03
CN1828911A (zh) 2006-09-06
CN100495181C (zh) 2009-06-03
WO2003036376A1 (en) 2003-05-01
CN1484778A (zh) 2004-03-24

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