KR20030000123A - 트랜지스터 및 그의 제조 방법 - Google Patents
트랜지스터 및 그의 제조 방법 Download PDFInfo
- Publication number
- KR20030000123A KR20030000123A KR1020010035783A KR20010035783A KR20030000123A KR 20030000123 A KR20030000123 A KR 20030000123A KR 1020010035783 A KR1020010035783 A KR 1020010035783A KR 20010035783 A KR20010035783 A KR 20010035783A KR 20030000123 A KR20030000123 A KR 20030000123A
- Authority
- KR
- South Korea
- Prior art keywords
- gate electrode
- semiconductor substrate
- low
- impurity region
- forming
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 19
- 238000004519 manufacturing process Methods 0.000 title description 12
- 239000012535 impurity Substances 0.000 claims abstract description 38
- 239000004065 semiconductor Substances 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 125000006850 spacer group Chemical group 0.000 claims description 13
- 150000002500 ions Chemical class 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 238000002513 implantation Methods 0.000 claims description 2
- 238000009413 insulation Methods 0.000 abstract 2
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- 230000003213 activating effect Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28114—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor characterised by the sectional shape, e.g. T, inverted-T
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/42376—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the length or the sectional shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
- H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (3)
- 반도체 기판;상기 반도체 기판 상에 게이트 절연막이 개재되며 하부 부위보다 상부 부위의 면적이 넓은 구조로 형성된 게이트 전극;상기 게이트 전극의 상부 부위와 반도체 기판 사이의 게이트 전극의 하부 부위 측벽에 형성되는 절연막;상기 게이트 전극 양측의 반도체 기판 표면내에 LDD 구조의 소오스/드레인 불순물 영역을 포함하는 트랜지스터.
- 제 1 도전형의 반도체 기판 표면 내에 저 농도, 저 에너지의 불순물 형성 공정으로 제 2 도전형의 저농도 불순물 영역을 형성하는 단계;상기 반도체 기판 상에 게이트 전극용 콘택홀이 형성된 제 1 절연막을 형성하는 단계;상기 콘택홀의 내벽에 제 2 절연막 스페이서를 형성하는 단계;상기 제 2 절연막 스페이서와 제 1 절연막을 마스크로 저 농도, 저 에너지의 제 1 도전형 불순물 이온을 주입하고 드라이브-인 하여 상기 노출된 저농도 불순물 영역을 비 활성 영역으로 환원 시켜 채널 영역을 형성하는 단계;전면에 게이트 절연막, 게이트 전극용 도전층을 순차적으로 형성하는 단계;상기 도전층과 게이트 절연막을 선택 식각하여 상기 채널 영역 상측에 채널영역보다 큰 면적을 갖는 게이트 전극을 형성하는 단계;상기 게이트 전극을 마스크로 상기 제 1 절연막을 선택 식각하는 단계;상기 게이트 전극을 마스크로 고 농도, 고 에너지의 불순물 형성 공정으로 상기 게이트 전극 양측의 반도체 기판 표면 내에 고농도 불순물 영역을 형성하는 단계를 포함하는 트랜지스터의 제조 방법.
- 제 2 항에 있어서,상기 저농도 불순물 영역의 깊이를 상기 게이트 전극 두께의 반 정도가 되도록 주입 에너지를 조절함을 특징으로 하는 트랜지스터의 제조 방법.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020010035783A KR100761547B1 (ko) | 2001-06-22 | 2001-06-22 | 트랜지스터 및 그의 제조 방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020010035783A KR100761547B1 (ko) | 2001-06-22 | 2001-06-22 | 트랜지스터 및 그의 제조 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20030000123A true KR20030000123A (ko) | 2003-01-06 |
KR100761547B1 KR100761547B1 (ko) | 2007-09-27 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020010035783A KR100761547B1 (ko) | 2001-06-22 | 2001-06-22 | 트랜지스터 및 그의 제조 방법 |
Country Status (1)
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KR (1) | KR100761547B1 (ko) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20040025800A (ko) * | 2002-09-17 | 2004-03-26 | 아남반도체 주식회사 | 반도체 다마신 구조를 이용한 게이트 라인 형성 방법 |
KR100636684B1 (ko) * | 2005-07-06 | 2006-10-23 | 주식회사 하이닉스반도체 | 셀 트랜지스터의 게이트구조 및 이를 갖는 반도체메모리소자의 제조방법 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3239202B2 (ja) * | 1995-12-01 | 2001-12-17 | シャープ株式会社 | Mosトランジスタ及びその製造方法 |
-
2001
- 2001-06-22 KR KR1020010035783A patent/KR100761547B1/ko active IP Right Grant
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20040025800A (ko) * | 2002-09-17 | 2004-03-26 | 아남반도체 주식회사 | 반도체 다마신 구조를 이용한 게이트 라인 형성 방법 |
KR100636684B1 (ko) * | 2005-07-06 | 2006-10-23 | 주식회사 하이닉스반도체 | 셀 트랜지스터의 게이트구조 및 이를 갖는 반도체메모리소자의 제조방법 |
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Publication number | Publication date |
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KR100761547B1 (ko) | 2007-09-27 |
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