KR20020034957A - 전자 디바이스 및 반도체 집적 회로 장치의 제조 방법 - Google Patents
전자 디바이스 및 반도체 집적 회로 장치의 제조 방법 Download PDFInfo
- Publication number
- KR20020034957A KR20020034957A KR1020010067861A KR20010067861A KR20020034957A KR 20020034957 A KR20020034957 A KR 20020034957A KR 1020010067861 A KR1020010067861 A KR 1020010067861A KR 20010067861 A KR20010067861 A KR 20010067861A KR 20020034957 A KR20020034957 A KR 20020034957A
- Authority
- KR
- South Korea
- Prior art keywords
- pattern
- phase shift
- film
- mask
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 92
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 75
- 238000000034 method Methods 0.000 claims abstract description 85
- 230000010363 phase shift Effects 0.000 claims abstract description 67
- 230000008569 process Effects 0.000 claims abstract description 39
- 229910052751 metal Inorganic materials 0.000 claims abstract description 34
- 239000002184 metal Substances 0.000 claims abstract description 34
- 238000012546 transfer Methods 0.000 claims abstract description 25
- 230000007261 regionalization Effects 0.000 claims description 33
- 239000000758 substrate Substances 0.000 claims description 23
- 238000001459 lithography Methods 0.000 claims description 10
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 230000000903 blocking effect Effects 0.000 claims 3
- 230000005540 biological transmission Effects 0.000 claims 1
- 238000005286 illumination Methods 0.000 abstract description 5
- 238000000206 photolithography Methods 0.000 abstract description 5
- 239000010408 film Substances 0.000 description 176
- 239000011651 chromium Substances 0.000 description 29
- 239000010410 layer Substances 0.000 description 16
- 239000012071 phase Substances 0.000 description 15
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 11
- 239000000463 material Substances 0.000 description 10
- 238000000059 patterning Methods 0.000 description 10
- 238000005530 etching Methods 0.000 description 9
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 229910052804 chromium Inorganic materials 0.000 description 8
- 229920005591 polysilicon Polymers 0.000 description 8
- 238000002834 transmittance Methods 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 238000011161 development Methods 0.000 description 5
- 230000018109 developmental process Effects 0.000 description 5
- 230000010354 integration Effects 0.000 description 5
- 230000009467 reduction Effects 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 229910021332 silicide Inorganic materials 0.000 description 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 229910006501 ZrSiO Inorganic materials 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical group [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 150000002736 metal compounds Chemical class 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- -1 tungsten nitride Chemical class 0.000 description 2
- 229910016006 MoSi Inorganic materials 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- IVHJCRXBQPGLOV-UHFFFAOYSA-N azanylidynetungsten Chemical compound [W]#N IVHJCRXBQPGLOV-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- PBYZMCDFOULPGH-UHFFFAOYSA-N tungstate Chemical compound [O-][W]([O-])(=O)=O PBYZMCDFOULPGH-UHFFFAOYSA-N 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70125—Use of illumination settings tailored to particular mask patterns
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000334366A JP2002141268A (ja) | 2000-11-01 | 2000-11-01 | 電子デバイス及び半導体集積回路装置の製造方法 |
| JPJP-P-2000-00334366 | 2000-11-01 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20020034957A true KR20020034957A (ko) | 2002-05-09 |
Family
ID=18810295
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020010067861A Ceased KR20020034957A (ko) | 2000-11-01 | 2001-11-01 | 전자 디바이스 및 반도체 집적 회로 장치의 제조 방법 |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US6660438B2 (enExample) |
| JP (1) | JP2002141268A (enExample) |
| KR (1) | KR20020034957A (enExample) |
| TW (1) | TW546702B (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100763349B1 (ko) * | 2006-09-14 | 2007-10-04 | 삼성전기주식회사 | 금속 스탬프 제조방법 |
| KR20130114433A (ko) * | 2012-04-09 | 2013-10-17 | 삼성전자주식회사 | Ｔｓｖ를 구비한 반도체 칩 및 그 반도체 칩 제조방법 |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2864915B2 (ja) * | 1992-12-07 | 1999-03-08 | 株式会社日立製作所 | 半導体装置の製造方法 |
| JP3612525B2 (ja) * | 2002-06-04 | 2005-01-19 | Ｎｅｃ液晶テクノロジー株式会社 | 薄膜半導体装置の製造方法及びそのレジストパターン形成方法 |
| KR100446306B1 (ko) * | 2002-08-28 | 2004-09-01 | 삼성전자주식회사 | 고집적 회로 소자 제조용 마스크, 그 레이아웃 생성 방법,그 제조 방법 및 이를 이용한 고집적 회로 소자 제조 방법 |
| GB0229226D0 (en) * | 2002-12-14 | 2003-01-22 | Koninkl Philips Electronics Nv | Liquid crystal displays with post spacers, and their manufacture |
| JP3787123B2 (ja) * | 2003-02-13 | 2006-06-21 | 株式会社東芝 | 検査方法、プロセッサ及び半導体装置の製造方法 |
| KR100634437B1 (ko) * | 2004-10-05 | 2006-10-16 | 삼성전자주식회사 | 반도체 소자 제조용 마스크 및 그 제조방법 |
| US7566526B2 (en) * | 2004-12-22 | 2009-07-28 | Macronix International Co., Ltd. | Method of exposure for lithography process and mask therefor |
| DE102005024348B4 (de) * | 2005-05-27 | 2010-04-22 | Qimonda Ag | Verfahren zur photolithographischen Strukturierung einer Vielzahl von Belichtungsfeldern |
| CN1940540A (zh) * | 2005-09-30 | 2007-04-04 | Hoya株式会社 | 缺陷检查装置和缺陷检查方法 |
| JP2008026822A (ja) * | 2006-07-25 | 2008-02-07 | Toshiba Corp | フォトマスクの製造方法及び半導体装置の製造方法 |
| US8343578B2 (en) * | 2006-10-30 | 2013-01-01 | International Business Machines Corporation | Self-assembled lamellar microdomains and method of alignment |
| KR100819006B1 (ko) * | 2007-02-13 | 2008-04-03 | 삼성전자주식회사 | 마이크로 어레이용 마스크 세트, 이의 제조 방법, 및마스크 세트를 이용한 마이크로 어레이의 제조 방법 |
| US8158015B2 (en) * | 2007-03-15 | 2012-04-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Fitting methodology of etching times determination for a mask to provide critical dimension and phase control |
| CN101281359B (zh) * | 2007-04-06 | 2010-09-29 | 中芯国际集成电路制造(上海)有限公司 | 衰减式相位移光罩的制造方法 |
| US20080254376A1 (en) * | 2007-04-11 | 2008-10-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Phase-shifting mask and method of fabricating same |
| KR102270752B1 (ko) * | 2014-08-11 | 2021-07-01 | 삼성전자주식회사 | 반도체 소자의 미세 패턴 형성 방법 |
| JP6540183B2 (ja) * | 2015-04-15 | 2019-07-10 | 大日本印刷株式会社 | 変形照明用アパーチャおよび露光装置 |
| US10908494B2 (en) * | 2017-05-31 | 2021-02-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photomask and manufacturing method thereof |
| KR102261212B1 (ko) * | 2017-06-09 | 2021-06-03 | 엘지디스플레이 주식회사 | 표시장치 |
| CN109755127B (zh) * | 2018-12-27 | 2020-11-10 | 中国科学院物理研究所 | 一种用于芯片制造的刻蚀与沉积-剥离融合方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05181257A (ja) | 1992-01-06 | 1993-07-23 | Sharp Corp | 光露光用マスク |
| JPH05289307A (ja) | 1992-04-13 | 1993-11-05 | Matsushita Electric Ind Co Ltd | レチクルおよびレチクル製造方法 |
| JPH09211837A (ja) | 1996-01-30 | 1997-08-15 | Sanyo Electric Co Ltd | 位相シフトマスク及びその製造方法 |
-
2000
- 2000-11-01 JP JP2000334366A patent/JP2002141268A/ja not_active Withdrawn
-
2001
- 2001-10-23 US US09/983,172 patent/US6660438B2/en not_active Expired - Fee Related
- 2001-10-24 TW TW090126277A patent/TW546702B/zh not_active IP Right Cessation
- 2001-11-01 KR KR1020010067861A patent/KR20020034957A/ko not_active Ceased
-
2003
- 2003-10-15 US US10/684,391 patent/US6893785B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100763349B1 (ko) * | 2006-09-14 | 2007-10-04 | 삼성전기주식회사 | 금속 스탬프 제조방법 |
| KR20130114433A (ko) * | 2012-04-09 | 2013-10-17 | 삼성전자주식회사 | Ｔｓｖ를 구비한 반도체 칩 및 그 반도체 칩 제조방법 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2002141268A (ja) | 2002-05-17 |
| US20040081917A1 (en) | 2004-04-29 |
| US20020051943A1 (en) | 2002-05-02 |
| US6660438B2 (en) | 2003-12-09 |
| US6893785B2 (en) | 2005-05-17 |
| TW546702B (en) | 2003-08-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0109 | Patent application |
Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 20011101 |
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| PG1501 | Laying open of application | ||
| A201 | Request for examination | ||
| PA0201 | Request for examination |
Patent event code: PA02012R01D Patent event date: 20061101 Comment text: Request for Examination of Application Patent event code: PA02011R01I Patent event date: 20011101 Comment text: Patent Application |
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| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 20070913 Patent event code: PE09021S01D |
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