JP2002141268A - 電子デバイス及び半導体集積回路装置の製造方法 - Google Patents

電子デバイス及び半導体集積回路装置の製造方法

Info

Publication number
JP2002141268A
JP2002141268A JP2000334366A JP2000334366A JP2002141268A JP 2002141268 A JP2002141268 A JP 2002141268A JP 2000334366 A JP2000334366 A JP 2000334366A JP 2000334366 A JP2000334366 A JP 2000334366A JP 2002141268 A JP2002141268 A JP 2002141268A
Authority
JP
Japan
Prior art keywords
pattern
light
phase shift
film
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2000334366A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002141268A5 (enExample
Inventor
Toshihiko Tanaka
稔彦 田中
Norio Hasegawa
昇雄 長谷川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2000334366A priority Critical patent/JP2002141268A/ja
Priority to US09/983,172 priority patent/US6660438B2/en
Priority to TW090126277A priority patent/TW546702B/zh
Priority to KR1020010067861A priority patent/KR20020034957A/ko
Publication of JP2002141268A publication Critical patent/JP2002141268A/ja
Priority to US10/684,391 priority patent/US6893785B2/en
Publication of JP2002141268A5 publication Critical patent/JP2002141268A5/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70125—Use of illumination settings tailored to particular mask patterns

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2000334366A 2000-11-01 2000-11-01 電子デバイス及び半導体集積回路装置の製造方法 Withdrawn JP2002141268A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2000334366A JP2002141268A (ja) 2000-11-01 2000-11-01 電子デバイス及び半導体集積回路装置の製造方法
US09/983,172 US6660438B2 (en) 2000-11-01 2001-10-23 Method of manufacturing an electronic device and a semiconductor integrated circuit device
TW090126277A TW546702B (en) 2000-11-01 2001-10-24 Method of manufacturing an electronic device and a semiconductor integrated circuit device
KR1020010067861A KR20020034957A (ko) 2000-11-01 2001-11-01 전자 디바이스 및 반도체 집적 회로 장치의 제조 방법
US10/684,391 US6893785B2 (en) 2000-11-01 2003-10-15 Method of manufacturing an electronic device and a semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000334366A JP2002141268A (ja) 2000-11-01 2000-11-01 電子デバイス及び半導体集積回路装置の製造方法

Publications (2)

Publication Number Publication Date
JP2002141268A true JP2002141268A (ja) 2002-05-17
JP2002141268A5 JP2002141268A5 (enExample) 2005-02-03

Family

ID=18810295

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000334366A Withdrawn JP2002141268A (ja) 2000-11-01 2000-11-01 電子デバイス及び半導体集積回路装置の製造方法

Country Status (4)

Country Link
US (2) US6660438B2 (enExample)
JP (1) JP2002141268A (enExample)
KR (1) KR20020034957A (enExample)
TW (1) TW546702B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100446306B1 (ko) * 2002-08-28 2004-09-01 삼성전자주식회사 고집적 회로 소자 제조용 마스크, 그 레이아웃 생성 방법,그 제조 방법 및 이를 이용한 고집적 회로 소자 제조 방법
JP2016206234A (ja) * 2015-04-15 2016-12-08 大日本印刷株式会社 変形照明用アパーチャおよび露光装置

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2864915B2 (ja) * 1992-12-07 1999-03-08 株式会社日立製作所 半導体装置の製造方法
JP3612525B2 (ja) * 2002-06-04 2005-01-19 Ｎｅｃ液晶テクノロジー株式会社 薄膜半導体装置の製造方法及びそのレジストパターン形成方法
GB0229226D0 (en) * 2002-12-14 2003-01-22 Koninkl Philips Electronics Nv Liquid crystal displays with post spacers, and their manufacture
JP3787123B2 (ja) * 2003-02-13 2006-06-21 株式会社東芝 検査方法、プロセッサ及び半導体装置の製造方法
KR100634437B1 (ko) * 2004-10-05 2006-10-16 삼성전자주식회사 반도체 소자 제조용 마스크 및 그 제조방법
US7566526B2 (en) * 2004-12-22 2009-07-28 Macronix International Co., Ltd. Method of exposure for lithography process and mask therefor
DE102005024348B4 (de) * 2005-05-27 2010-04-22 Qimonda Ag Verfahren zur photolithographischen Strukturierung einer Vielzahl von Belichtungsfeldern
CN1940540A (zh) * 2005-09-30 2007-04-04 Hoya株式会社 缺陷检查装置和缺陷检查方法
JP2008026822A (ja) * 2006-07-25 2008-02-07 Toshiba Corp フォトマスクの製造方法及び半導体装置の製造方法
KR100763349B1 (ko) * 2006-09-14 2007-10-04 삼성전기주식회사 금속 스탬프 제조방법
US8343578B2 (en) * 2006-10-30 2013-01-01 International Business Machines Corporation Self-assembled lamellar microdomains and method of alignment
KR100819006B1 (ko) * 2007-02-13 2008-04-03 삼성전자주식회사 마이크로 어레이용 마스크 세트, 이의 제조 방법, 및마스크 세트를 이용한 마이크로 어레이의 제조 방법
US8158015B2 (en) * 2007-03-15 2012-04-17 Taiwan Semiconductor Manufacturing Company, Ltd. Fitting methodology of etching times determination for a mask to provide critical dimension and phase control
CN101281359B (zh) * 2007-04-06 2010-09-29 中芯国际集成电路制造(上海)有限公司 衰减式相位移光罩的制造方法
US20080254376A1 (en) * 2007-04-11 2008-10-16 Taiwan Semiconductor Manufacturing Company, Ltd. Phase-shifting mask and method of fabricating same
KR101916225B1 (ko) * 2012-04-09 2018-11-07 삼성전자 주식회사 Ｔｓｖ를 구비한 반도체 칩 및 그 반도체 칩 제조방법
KR102270752B1 (ko) * 2014-08-11 2021-07-01 삼성전자주식회사 반도체 소자의 미세 패턴 형성 방법
US10908494B2 (en) * 2017-05-31 2021-02-02 Taiwan Semiconductor Manufacturing Company, Ltd. Photomask and manufacturing method thereof
KR102261212B1 (ko) * 2017-06-09 2021-06-03 엘지디스플레이 주식회사 표시장치
CN109755127B (zh) * 2018-12-27 2020-11-10 中国科学院物理研究所 一种用于芯片制造的刻蚀与沉积-剥离融合方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05181257A (ja) 1992-01-06 1993-07-23 Sharp Corp 光露光用マスク
JPH05289307A (ja) 1992-04-13 1993-11-05 Matsushita Electric Ind Co Ltd レチクルおよびレチクル製造方法
JPH09211837A (ja) 1996-01-30 1997-08-15 Sanyo Electric Co Ltd 位相シフトマスク及びその製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100446306B1 (ko) * 2002-08-28 2004-09-01 삼성전자주식회사 고집적 회로 소자 제조용 마스크, 그 레이아웃 생성 방법,그 제조 방법 및 이를 이용한 고집적 회로 소자 제조 방법
JP2016206234A (ja) * 2015-04-15 2016-12-08 大日本印刷株式会社 変形照明用アパーチャおよび露光装置

Also Published As

Publication number Publication date
KR20020034957A (ko) 2002-05-09
TW546702B (en) 2003-08-11
US20020051943A1 (en) 2002-05-02
US6893785B2 (en) 2005-05-17
US6660438B2 (en) 2003-12-09
US20040081917A1 (en) 2004-04-29

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