KR200157363Y1 - 연결와이어를 사용하지 않고 칩의 본딩패드와 리드프레임의 리드를 접속한 반도체 장치 - Google Patents

연결와이어를 사용하지 않고 칩의 본딩패드와 리드프레임의 리드를 접속한 반도체 장치 Download PDF

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KR200157363Y1
KR200157363Y1 KR2019940010585U KR19940010585U KR200157363Y1 KR 200157363 Y1 KR200157363 Y1 KR 200157363Y1 KR 2019940010585 U KR2019940010585 U KR 2019940010585U KR 19940010585 U KR19940010585 U KR 19940010585U KR 200157363 Y1 KR200157363 Y1 KR 200157363Y1
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chip
lead
lead frame
semiconductor device
bonding pad
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KR2019940010585U
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KR950034345U (ko
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조재원
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구본준
엘지반도체주식회사
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    • H—ELECTRICITY
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49503—Lead-frames or other flat leads characterised by the die pad
    • H01L23/4951—Chip-on-leads or leads-on-chip techniques, i.e. inner lead fingers being used as die pad
    • H—ELECTRICITY
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
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    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
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    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16153—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate
    • H01L2224/16175—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate the item being metallic
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    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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    • H01L2224/16245—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/17—Structure, shape, material or disposition of the bump connectors after the connecting process of a plurality of bump connectors
    • H01L2224/171—Disposition
    • H01L2224/1718—Disposition being disposed on at least two different sides of the body, e.g. dual array
    • H01L2224/17181—On opposite sides of the body
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch

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Abstract

반도체 칩의 다수의 본딩패드와 리드프레임의 다수의 리드가 전기적으로 각각 서로 접속된 반도체 장치로서, 상기 리드프레임의 리드는 인너리드의 끝 부분이 구부려져서 형성되고, 이 구부러진 리드 끝 부분이 칩의 측면에 형성된 본딩 패드(4)에 금속 접착제(7)를 이용하여 부착된 반도체 패키지이다.

Description

연결 와이어를 사용하지 않고 칩의 본딩패드와 리드프레임의 리드를 접속한 반도체 장치
제1도는 종래의 기술에 따른 반도체 장치에서의 칩과 리드프레임 리드의 접속 공정을 도시한 도면.
제2도는 본 고안에 따른 반도체 장치에서의 칩과 리드프레임 리드의 접속 공정을 나타낸 도면.
제3도는 본 고안에 따른 반도체 장치에서의 칩과 리드프레임 리드의 접속 공정을 상세히 나타낸 도면.
* 도면의 주요부분에 대한 부호의 설명
1 : 리드프레임 패들 2 : 리드프레임 리드
3 : 칩 4,9 : 패드
5 : 와이어 6 : 봉지 수지
7 : 금속 부착제 8 : 실리콘 웨이퍼
10 : 메탈
본 고안은 반도체 장치에 관한 것으로, 칩과 리드프레임 리드의 연결을 와이어를 사용하지 않고 접속한 반도체 장치에 관한 것이다.
일반적으로 반도체 장치에서 칩과 리드프레임 리드의 전기적 연결은 보통 금 또는 알루미늄 재질의 와이어를 사용하고 있다.
종래 기술 구성은 일반적으로 제1도(a)와 같이 리드프레임 패들(1)위에 칩(3)을 부착시키고 제1도(b)에 도시한 바와 같이 와이어(5)를 사용하여 칩 상의 패드 단자(4)와 리드프레임 리드(2)를 연결함으로서 전기적 통로를 제공한 후 제1도(d)와 같이 몰딩 수지(6)를 사용하여 칩과 와이어를 외부 충격으로 부터 보호하는 패키지를 완성하는 구조이다. 제1도(c)는 패드 단자(4)와 리드프레임 리드(2)의 연결 관계를 단면적으로 도시한 것이다.
이러한 종래의 기술의 문제점은 가는 금속 와이어를 사용하기 때문에 전기 저항이 크며, 반도체 칩위에 패드 단자를 구성해야 함으로 칩 사이즈의 축소하는 데에 한계가 있다. 또한 와이어 본드의 공정 시간이 많이 소요되며 와이어의 재질이 보통 귀금속이기 때문에 가격이 비싼 단점이 있다.
본 고안은 이러한 문제점을 개선하기 위한 것으로서, 그 목적은 칩과 리드프레임 리드와의 접속을 하는 데 있어서 금속 와이어를 사용하지 않는 반도체 장치를 제공하는 데 있다.
이하에서는 첨부 도면을 참조한 실시예의 설명을 통하여 본 고안을 상술한다. 각 도면에서 공통으로 사용한 도면 번호는 동일 부분 또는 동일 부품을 지칭한다.
제2도(a) 내지 (e)는 본 고안에 따른 반도체 장치에서 리드프레임 리드와 칩과의 접속과정을 나타낸 도면이다.
접속 공정은 먼저 제2도(a)에서와 같이 리드프레임 패들(1)의 크기를 칩의 면적보다 작게 만들고, 리드프레임 리드(2)의 형상을 제2도(d)도에 도시한 바와 같이 끝 부분을 구부려서 형성한다. 그리고 칩은 측면에 본딩 패드를 형성한다.
이렇게 형성된 칩을 리드프레임의 패들(1)에 부착한다.
다음에는 (b)도와 같이 칩(3)이 부착한 상태에서 칩 주변의 패드와 리드프레임 리드(2)사이에 금속 부착제(7)를 도포한 후, 리플로워시킴으로서 칩의 패드 단자와 리드프레임의 리드를 전기적으로 연결한다.
본 실시예에서는 금속 부착제로서 액상의 솔더 패스터(solder paste)를 사용하였다.
그후 칩과 리드프레임의 리드를 외부로 부터 보호하기 위해 수지 봉지를 이용하여 봉지시킴으로서 본 고안에 따른 칩과 리드프레임 리드의 접속이 완료된다.
칩 가장 자리의 패드를 구성하는 방법은 제3도 (a)에서와 같이 웨이퍼(8) 공정에서 마스크를 사용하여 원하는 패드 위치에 원하는 깊이만큼 실리콘 에칭을 실시한 후 (제3도(b)), 메탈(10)을 서퍼터링하고(제3도(c)), 메탈 에칭을 행한다.(제3도(d)). 마지막으로 제3도(e)처럼 웨이퍼를 절단함으로서 실현할 수 있다.
본 고안의 효과는 가는 금속 와이어를 사용하지 않고 리드프레임 리드를 직접 패드에 부착시키기 때문에 전기적 저항을 줄일수 있으며, 패드 단자를 칩의 측면에 배치시킴으로서 칩의 소형화를 하는데 유리하다. 또한 귀금속 대신에 값이 싼 금속 부착제를 사용하기 때문에 제조 비용을 절감할 수 있는 효과가 있다. 그리고 패키지의 두께를 와이어 본드일 경우 보다 얇게 할 수 있으며, 패들 크기를 상대적으로 축소시킴으로서 패키지 크랙(crack) 측면에서 신뢰성이 우수하다.

Claims (2)

  1. 반도체 칩의 다수의 본딩패드와 리드프레임의 다수의 리드가 전기적으로 각각 서로 접속된 반도체 장치에 있어서, 상기 리드프레임의 리드는 인너리드의 끝 부분이 구부러져서 형성되고, 이 구부러진 리드 끝 부분이 칩의 측면에 형성된 본딩 패드(4)에 금속 접착제(7)를 이용하여 부착된 것을 특징으로 하는 반도체 장치.
  2. 제1항에 있어서, 상기 금속 접착제(7)는 솔더 패스티인 것을 특징으로하는 반도체 장치.
KR2019940010585U 1994-05-13 1994-05-13 연결와이어를 사용하지 않고 칩의 본딩패드와 리드프레임의 리드를 접속한 반도체 장치 KR200157363Y1 (ko)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140048100A (ko) * 2011-03-09 2014-04-23 콘티넨탈 오토모티브 게엠베하 기판, smd 소자 및 리드 프레임 부품을 갖춘 조립체

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140048100A (ko) * 2011-03-09 2014-04-23 콘티넨탈 오토모티브 게엠베하 기판, smd 소자 및 리드 프레임 부품을 갖춘 조립체
KR101918321B1 (ko) * 2011-03-09 2019-01-29 콘티넨탈 오토모티브 게엠베하 기판, smd 소자 및 리드 프레임 부품을 갖춘 조립체

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