KR20010110737A - 기판의 열처리를 위한 반응기에서의 통합된 가열 및 냉각장치 - Google Patents

기판의 열처리를 위한 반응기에서의 통합된 가열 및 냉각장치 Download PDF

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Publication number
KR20010110737A
KR20010110737A KR1020017012943A KR20017012943A KR20010110737A KR 20010110737 A KR20010110737 A KR 20010110737A KR 1020017012943 A KR1020017012943 A KR 1020017012943A KR 20017012943 A KR20017012943 A KR 20017012943A KR 20010110737 A KR20010110737 A KR 20010110737A
Authority
KR
South Korea
Prior art keywords
substrate
heating
cooling
plate
resistor
Prior art date
Application number
KR1020017012943A
Other languages
English (en)
Korean (ko)
Inventor
뒤크레삐에르
기용에르베
Original Assignee
라뽀르뜨 프랑크
조인트 인더스트리얼 프로세서스 포 일렉트로닉스
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 라뽀르뜨 프랑크, 조인트 인더스트리얼 프로세서스 포 일렉트로닉스 filed Critical 라뽀르뜨 프랑크
Publication of KR20010110737A publication Critical patent/KR20010110737A/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Furnace Details (AREA)
  • Resistance Heating (AREA)
KR1020017012943A 1999-04-12 2000-04-12 기판의 열처리를 위한 반응기에서의 통합된 가열 및 냉각장치 KR20010110737A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR99/04680 1999-04-12
FR9904680A FR2792084A1 (fr) 1999-04-12 1999-04-12 Dispositif de chauffage et de refroidissement integre dans un reacteur de traitement thermique d'un substrat
PCT/FR2000/000946 WO2000062333A1 (fr) 1999-04-12 2000-04-12 Dispositif de chauffage et de refroidissement integre dans un reacteur de traitement thermique d'un substrat

Publications (1)

Publication Number Publication Date
KR20010110737A true KR20010110737A (ko) 2001-12-13

Family

ID=9544396

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020017012943A KR20010110737A (ko) 1999-04-12 2000-04-12 기판의 열처리를 위한 반응기에서의 통합된 가열 및 냉각장치

Country Status (5)

Country Link
EP (1) EP1173881A1 (ja)
JP (1) JP2002541428A (ja)
KR (1) KR20010110737A (ja)
FR (1) FR2792084A1 (ja)
WO (1) WO2000062333A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8007591B2 (en) 2004-01-30 2011-08-30 Tokyo Electron Limited Substrate holder having a fluid gap and method of fabricating the substrate holder
KR101289346B1 (ko) * 2006-05-15 2013-07-29 주성엔지니어링(주) 기판 처리 장치
KR101398970B1 (ko) * 2012-11-15 2014-05-27 (주)와이에스썸텍 대면적 글라스 히팅 및 냉각 장치

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002221394A (ja) * 2001-01-24 2002-08-09 Showa Mfg Co Ltd 電子部品の加熱装置
US6563686B2 (en) 2001-03-19 2003-05-13 Applied Materials, Inc. Pedestal assembly with enhanced thermal conductivity
US20030173346A1 (en) * 2002-03-18 2003-09-18 Renken Wayne Glenn System and method for heating and cooling wafer at accelerated rates
TW200612512A (en) 2004-06-28 2006-04-16 Ngk Insulators Ltd Substrate heating sapparatus
JP2009010005A (ja) * 2007-06-26 2009-01-15 Yac Co Ltd 加熱冷却装置
CN102460650B (zh) 2009-06-24 2014-10-01 佳能安内华股份有限公司 真空加热/冷却装置及磁阻元件的制造方法
JP7053939B1 (ja) * 2021-12-10 2022-04-12 株式会社オリジン 半田付け装置及び半田付け製品の製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR940011708B1 (ko) * 1990-04-09 1994-12-23 니찌덴 아네루바 가부시끼가이샤 기판온도제어기구
DE69130987T2 (de) * 1990-04-20 1999-09-30 Applied Materials Inc Vorrichtung zur Behandlung von Halbleiter-Plättchen
JPH05263243A (ja) * 1992-03-16 1993-10-12 Murata Mfg Co Ltd 薄膜形成装置
JP2605589B2 (ja) * 1993-07-27 1997-04-30 日本電気株式会社 減圧室の半導体基板加熱装置
JPH08176827A (ja) * 1994-12-27 1996-07-09 Hitachi Ltd 半導体製造装置
US5775416A (en) * 1995-11-17 1998-07-07 Cvc Products, Inc. Temperature controlled chuck for vacuum processing
JP2953395B2 (ja) * 1996-09-05 1999-09-27 日本電気株式会社 スパッタリング装置
JP2954908B2 (ja) * 1997-09-30 1999-09-27 エスエムシー株式会社 基板の温度調整装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8007591B2 (en) 2004-01-30 2011-08-30 Tokyo Electron Limited Substrate holder having a fluid gap and method of fabricating the substrate holder
KR101118863B1 (ko) * 2004-01-30 2012-03-19 도쿄엘렉트론가부시키가이샤 유체 간극을 갖는 기판 홀더 및 그 기판 홀더를 제조하는방법
KR101289346B1 (ko) * 2006-05-15 2013-07-29 주성엔지니어링(주) 기판 처리 장치
KR101398970B1 (ko) * 2012-11-15 2014-05-27 (주)와이에스썸텍 대면적 글라스 히팅 및 냉각 장치

Also Published As

Publication number Publication date
WO2000062333A1 (fr) 2000-10-19
EP1173881A1 (fr) 2002-01-23
JP2002541428A (ja) 2002-12-03
FR2792084A1 (fr) 2000-10-13

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