EP1173881A1 - Dispositif de chauffage et de refroidissement integre dans un reacteur de traitement thermique d'un substrat - Google Patents
Dispositif de chauffage et de refroidissement integre dans un reacteur de traitement thermique d'un substratInfo
- Publication number
- EP1173881A1 EP1173881A1 EP00918959A EP00918959A EP1173881A1 EP 1173881 A1 EP1173881 A1 EP 1173881A1 EP 00918959 A EP00918959 A EP 00918959A EP 00918959 A EP00918959 A EP 00918959A EP 1173881 A1 EP1173881 A1 EP 1173881A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- substrate
- heating
- cooling
- plate
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 91
- 238000010438 heat treatment Methods 0.000 title claims abstract description 82
- 238000001816 cooling Methods 0.000 title claims abstract description 80
- 238000007669 thermal treatment Methods 0.000 title abstract 2
- 239000000463 material Substances 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 13
- 239000011248 coating agent Substances 0.000 claims description 10
- 238000000576 coating method Methods 0.000 claims description 10
- 230000005855 radiation Effects 0.000 claims description 10
- 239000004568 cement Substances 0.000 claims description 9
- 239000007789 gas Substances 0.000 claims description 8
- 239000007788 liquid Substances 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 229910052500 inorganic mineral Inorganic materials 0.000 claims description 7
- 239000011707 mineral Substances 0.000 claims description 7
- 239000012071 phase Substances 0.000 claims description 7
- 239000007787 solid Substances 0.000 claims description 6
- 125000006850 spacer group Chemical group 0.000 claims description 6
- 230000005670 electromagnetic radiation Effects 0.000 claims description 5
- 239000013529 heat transfer fluid Substances 0.000 claims description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 238000009833 condensation Methods 0.000 claims description 3
- 230000005494 condensation Effects 0.000 claims description 3
- 238000002844 melting Methods 0.000 claims description 3
- 230000008018 melting Effects 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 239000002470 thermal conductor Substances 0.000 claims description 3
- 239000012808 vapor phase Substances 0.000 claims description 3
- 239000003870 refractory metal Substances 0.000 claims description 2
- 230000001747 exhibiting effect Effects 0.000 abstract 2
- 238000005485 electric heating Methods 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000009432 framing Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
Definitions
- the substrate is first heated rapidly to a first temperature and maintained for a determined period at this temperature. It is then cooled rapidly by bringing a cooling box into contact with the plate supporting the substrate.
- the substrate is heated using a resistor or infrared lamps.
- the substrate is simultaneously subjected to UV ultraviolet radiation, and gases under vacuum or under pressure are brought into contact with the substrate to be decomposed in the vapor phase so as to deposit a solid on the surface of the substrate, or to react directly with the substrate. solid and modify its composition.
- a heating and cooling device designated for the general reference 10, comprises a plate 12 of refractory stainless steel having a flat upper surface 13, on which is positioned a substrate 14, in particular of semi-material -driver. Inside the plate 12 is a heating means formed by an electrical resistance 16, which is housed in a series of notches 18, separated from each other by intermediate spacers 20. A thermocouple is placed in a cylindrical hole in the stainless steel part and allows the temperature to be regulated during the heating phases.
- the heating surface is illustrated in FIG. 1, during which the resistor 16 produces a Joule effect heating of the plate 12.
- the substrate 14 rests on the upper face 13 of the plate 12 and thus heated for a predetermined time depending on the desired heat treatment.
- the cooling box 26 remains separated from the plate 12 by an interval 32 during the entire heating phase.
- the maximum temperature is around 700 ° C, with a heating rate of 200 ° C per minute.
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Furnace Details (AREA)
- Resistance Heating (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR9904680 | 1999-04-12 | ||
| FR9904680A FR2792084A1 (fr) | 1999-04-12 | 1999-04-12 | Dispositif de chauffage et de refroidissement integre dans un reacteur de traitement thermique d'un substrat |
| PCT/FR2000/000946 WO2000062333A1 (fr) | 1999-04-12 | 2000-04-12 | Dispositif de chauffage et de refroidissement integre dans un reacteur de traitement thermique d'un substrat |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| EP1173881A1 true EP1173881A1 (fr) | 2002-01-23 |
Family
ID=9544396
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP00918959A Withdrawn EP1173881A1 (fr) | 1999-04-12 | 2000-04-12 | Dispositif de chauffage et de refroidissement integre dans un reacteur de traitement thermique d'un substrat |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP1173881A1 (ja) |
| JP (1) | JP2002541428A (ja) |
| KR (1) | KR20010110737A (ja) |
| FR (1) | FR2792084A1 (ja) |
| WO (1) | WO2000062333A1 (ja) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002221394A (ja) * | 2001-01-24 | 2002-08-09 | Showa Mfg Co Ltd | 電子部品の加熱装置 |
| US6563686B2 (en) | 2001-03-19 | 2003-05-13 | Applied Materials, Inc. | Pedestal assembly with enhanced thermal conductivity |
| US20030173346A1 (en) | 2002-03-18 | 2003-09-18 | Renken Wayne Glenn | System and method for heating and cooling wafer at accelerated rates |
| KR101118863B1 (ko) * | 2004-01-30 | 2012-03-19 | 도쿄엘렉트론가부시키가이샤 | 유체 간극을 갖는 기판 홀더 및 그 기판 홀더를 제조하는방법 |
| TW200612512A (en) | 2004-06-28 | 2006-04-16 | Ngk Insulators Ltd | Substrate heating sapparatus |
| KR101289346B1 (ko) * | 2006-05-15 | 2013-07-29 | 주성엔지니어링(주) | 기판 처리 장치 |
| JP2009010005A (ja) * | 2007-06-26 | 2009-01-15 | Yac Co Ltd | 加熱冷却装置 |
| GB2483421B (en) | 2009-06-24 | 2013-10-09 | Canon Anelva Corp | Vacuum heating/cooling apparatus and manufacturing method of magnetoresistance element |
| KR101398970B1 (ko) * | 2012-11-15 | 2014-05-27 | (주)와이에스썸텍 | 대면적 글라스 히팅 및 냉각 장치 |
| JP7053939B1 (ja) * | 2021-12-10 | 2022-04-12 | 株式会社オリジン | 半田付け装置及び半田付け製品の製造方法 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR940011708B1 (ko) * | 1990-04-09 | 1994-12-23 | 니찌덴 아네루바 가부시끼가이샤 | 기판온도제어기구 |
| DE69130987T2 (de) * | 1990-04-20 | 1999-09-30 | Applied Materials, Inc. | Vorrichtung zur Behandlung von Halbleiter-Plättchen |
| JPH05263243A (ja) * | 1992-03-16 | 1993-10-12 | Murata Mfg Co Ltd | 薄膜形成装置 |
| JP2605589B2 (ja) * | 1993-07-27 | 1997-04-30 | 日本電気株式会社 | 減圧室の半導体基板加熱装置 |
| JPH08176827A (ja) * | 1994-12-27 | 1996-07-09 | Hitachi Ltd | 半導体製造装置 |
| US5775416A (en) * | 1995-11-17 | 1998-07-07 | Cvc Products, Inc. | Temperature controlled chuck for vacuum processing |
| JP2953395B2 (ja) * | 1996-09-05 | 1999-09-27 | 日本電気株式会社 | スパッタリング装置 |
| JP2954908B2 (ja) * | 1997-09-30 | 1999-09-27 | エスエムシー株式会社 | 基板の温度調整装置 |
-
1999
- 1999-04-12 FR FR9904680A patent/FR2792084A1/fr not_active Withdrawn
-
2000
- 2000-04-12 WO PCT/FR2000/000946 patent/WO2000062333A1/fr not_active Application Discontinuation
- 2000-04-12 EP EP00918959A patent/EP1173881A1/fr not_active Withdrawn
- 2000-04-12 KR KR1020017012943A patent/KR20010110737A/ko not_active Application Discontinuation
- 2000-04-12 JP JP2000611309A patent/JP2002541428A/ja active Pending
Non-Patent Citations (1)
| Title |
|---|
| See references of WO0062333A1 * |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20010110737A (ko) | 2001-12-13 |
| FR2792084A1 (fr) | 2000-10-13 |
| JP2002541428A (ja) | 2002-12-03 |
| WO2000062333A1 (fr) | 2000-10-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
| 17P | Request for examination filed |
Effective date: 20011107 |
|
| AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE |
|
| STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN |
|
| 18D | Application deemed to be withdrawn |
Effective date: 20031101 |