KR20010098739A - 신규한 에스테르 화합물, 고분자 화합물, 레지스트 재료및 패턴 형성 방법 - Google Patents
신규한 에스테르 화합물, 고분자 화합물, 레지스트 재료및 패턴 형성 방법 Download PDFInfo
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- G03F7/004—Photosensitive materials
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- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
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Abstract
Description
Claims (7)
- 하기 화학식 1로 표시되는 에스테르 화합물.<화학식 1>식 중, R1은 수소 원자, 메틸기 또는 CH2CO2R3을 나타내고,R2는 수소 원자, 메틸기 또는 CO2R3을 나타내고,R3은 탄소수 1 내지 15의 직쇄상, 분지쇄상 또는 환상의 알킬기를 나타내고,k는 0 또는 1이고,Z는 결합하는 탄소 원자와 함께 단일환 또는 가교환을 형성하는 탄소수 2 내지 20의, 헤테로원자를 함유할 수 있는 2가의 탄화수소기이며,m은 0 또는 1이고,n은 0, 1, 2, 3 중 하나이고,2m+n=2 또는 3을 만족하는 수이다.
- 제2항의 화학식 1로 표시되는 에스테르 화합물을 원료로 하는 하기 화학식 1a-1 및(또는) 1a-2로 표시되는 반복 단위를 함유하는 것을 특징으로 하는 중량 평균 분자량 1,000 내지 500,000의 고분자 화합물.식 중, R1, R2, Z, k, m, n은 제1항과 같은 의미를 나타낸다.
- 제2항에 있어서, 하기 화학식 2a 내지 10a로 표시되는 적어도 하나의 반복단위를 더 함유하는 고분자 화합물.식 중, R1, R2, k는 상기와 같으며, R4는 수소 원자, 또는 탄소수 1 내지 15의 카르복시기 또는 히드록시기를 함유하는 1가의 탄화수소기를 나타내고, R5내지 R8중 적어도 1개는 탄소수 1 내지 15의 카르복시기 또는 히드록시기를 함유하는 1가의 탄화수소기를 나타내고, 나머지는 각각 독립적으로 수소 원자, 또는 탄소수 1 내지 15의 직쇄상, 분지쇄상 또는 환상의 알킬기를 나타내고, R5내지 R8는 서로 환을 형성할 수 있으며, 그 경우에는 R5내지 R8중 적어도 1개는 탄소수 1 내지 15의카르복시기 또는 히드록시기를 함유하는 2가의 탄화수소기를 나타내며, 나머지는 각각 독립적으로 단일 결합 또는 탄소수 1 내지 15의 직쇄상, 분지쇄상 또는 환상의 알킬렌기를 나타내며, R9는 탄소수 3 내지 15의 -CO2- 부분 구조를 함유하는 1가의 탄화수소기를 나타내고, R10내지 R13중 적어도 1개는 탄소수 2 내지 15의 -CO2- 부분 구조를 함유하는 1가의 탄화수소기를 나타내고, 나머지는 각각 독립적으로 수소 원자 또는 탄소수 1 내지 15의 직쇄상, 분지쇄상 또는 환상의 알킬기를 나타내며, R10내지 R13은 서로 환을 형성할 수 있으며, 그 경우에는 R10내지 R13중 적어도 하나는 탄소수 1 내지 15의 -CO2- 부분 구조를 함유하는 2가의 탄화수소기를 나타내고, 나머지는 각각 독립적으로 단일 결합 또는 탄소수 1 내지 15의 직쇄상, 분지쇄상 또는 환상의 알킬렌기를 나타내며, R14는 탄소수 7 내지 15의 다환식 탄화수소기 또는 다환식 탄화수소기를 함유하는 알킬기를 나타내며, R15는 산불안정기를 나타내며, X는 -CH2- 또는 -O-를 나타내며, Y는 -O- 또는 -(NR16)-을 나타내며, R16은 수소 원자 또는 탄소수 1 내지 15의 직쇄상, 분지쇄상 또는 환상의 알킬기를 나타낸다.
- 상기 화학식 1의 에스테르 화합물 및 탄소-탄소 이중 결합을 함유하는 별도의 화합물을 라디칼 중합, 음이온 중합 또는 배위 중합시키는 것을 특징으로 하는고분자 화합물의 제조 방법.
- 제2항 또는 제3항에 기재한 고분자 화합물을 포함하는 것을 특징으로 하는 레지스트 재료.
- 제2항 또는 제3항에 기재한 고분자 화합물과 고에너지선 또는 전자선에 감응하여 산을 발생하는 화합물과 유기 용매를 함유하는 것을 특징으로 하는 레지스트 재료.
- 제5항 또는 제6항에 기재한 레지스트 재료를 기판상에 도포하는 공정, 가열 처리 후 포토마스크를 놓고 고에너지선 또는 전자선으로 노광하는 공정, 및 필요에 따라 가열 처리한 후, 현상액을 사용하여 현상하는 공정을 포함하는 것을 특징으로 하는 패턴 형성 방법.
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KR1020010021086A KR100582630B1 (ko) | 2000-04-20 | 2001-04-19 | 신규한 에스테르 화합물, 고분자 화합물, 레지스트 재료및 패턴 형성 방법 |
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US6777157B1 (en) * | 2000-02-26 | 2004-08-17 | Shipley Company, L.L.C. | Copolymers and photoresist compositions comprising same |
TWI229240B (en) * | 2000-03-06 | 2005-03-11 | Shinetsu Chemical Co | Polymer, resist material, and method for forming pattern |
KR100582158B1 (ko) * | 2000-04-20 | 2006-05-23 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 신규한 에스테르 화합물, 고분자 화합물, 레지스트 재료및 패턴 형성 방법 |
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JP3772249B2 (ja) * | 1998-05-11 | 2006-05-10 | 信越化学工業株式会社 | 新規なエステル化合物、高分子化合物、レジスト材料、及びパターン形成方法 |
TW457277B (en) * | 1998-05-11 | 2001-10-01 | Shinetsu Chemical Co | Ester compounds, polymers, resist composition and patterning process |
DE19822968A1 (de) | 1998-05-25 | 1999-12-02 | Rwe Dea Ag | Verfahren zur katalytischen Hydroformylierung von Olefinen |
DE69931201T2 (de) | 1998-05-25 | 2006-08-31 | Daicel Chemical Industries, Ltd., Sakai | Photoresist copolymer. |
KR20000015014A (ko) | 1998-08-26 | 2000-03-15 | 김영환 | 신규의 포토레지스트용 단량체, 중합체 및 이를 이용한 포토레지스트 조성물 |
TWI228504B (en) * | 1998-11-02 | 2005-03-01 | Shinetsu Chemical Co | Novel ester compounds, polymers, resist compositions and patterning process |
KR100582158B1 (ko) * | 2000-04-20 | 2006-05-23 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 신규한 에스테르 화합물, 고분자 화합물, 레지스트 재료및 패턴 형성 방법 |
JP3997382B2 (ja) * | 2000-04-28 | 2007-10-24 | 信越化学工業株式会社 | 脂環構造を有する新規エステル化合物及びその製造方法 |
KR100497091B1 (ko) * | 2000-10-02 | 2005-06-27 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 환상 아세탈 화합물, 고분자 화합물, 레지스트 재료 및패턴 형성 방법 |
-
2001
- 2001-04-19 KR KR1020010021007A patent/KR100582158B1/ko active IP Right Grant
- 2001-04-19 KR KR1020010021086A patent/KR100582630B1/ko active IP Right Grant
- 2001-04-19 TW TW090109382A patent/TW507117B/zh not_active IP Right Cessation
- 2001-04-19 TW TW090109383A patent/TW520357B/zh not_active IP Right Cessation
- 2001-04-19 EP EP01303574A patent/EP1148044B1/en not_active Expired - Lifetime
- 2001-04-19 US US09/837,378 patent/US6586157B2/en not_active Expired - Lifetime
- 2001-04-19 US US09/837,219 patent/US6596463B2/en not_active Expired - Lifetime
- 2001-04-19 DE DE60100721T patent/DE60100721T2/de not_active Expired - Lifetime
- 2001-04-19 EP EP01303555A patent/EP1148045B1/en not_active Expired - Lifetime
- 2001-04-19 DE DE60101695T patent/DE60101695T2/de not_active Expired - Lifetime
-
2003
- 2003-03-19 US US10/390,795 patent/US20030198891A1/en not_active Abandoned
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20180124007A (ko) * | 2009-05-20 | 2018-11-20 | 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨 | 신규 수지 및 이를 포함하는 포토레지스트 조성물 |
Also Published As
Publication number | Publication date |
---|---|
EP1148045A1 (en) | 2001-10-24 |
DE60101695T2 (de) | 2004-12-09 |
EP1148045B1 (en) | 2003-09-10 |
US6596463B2 (en) | 2003-07-22 |
US20010044071A1 (en) | 2001-11-22 |
TW507117B (en) | 2002-10-21 |
KR100582630B1 (ko) | 2006-05-23 |
TW520357B (en) | 2003-02-11 |
DE60101695D1 (de) | 2004-02-12 |
US6586157B2 (en) | 2003-07-01 |
DE60100721D1 (de) | 2003-10-16 |
EP1148044B1 (en) | 2004-01-07 |
KR100582158B1 (ko) | 2006-05-23 |
US20030198891A1 (en) | 2003-10-23 |
KR20010098725A (ko) | 2001-11-08 |
DE60100721T2 (de) | 2004-07-15 |
EP1148044A1 (en) | 2001-10-24 |
US20020004178A1 (en) | 2002-01-10 |
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