KR20010056450A - 반도제장치의 소자격리막 형성방법 - Google Patents
반도제장치의 소자격리막 형성방법 Download PDFInfo
- Publication number
- KR20010056450A KR20010056450A KR1019990057907A KR19990057907A KR20010056450A KR 20010056450 A KR20010056450 A KR 20010056450A KR 1019990057907 A KR1019990057907 A KR 1019990057907A KR 19990057907 A KR19990057907 A KR 19990057907A KR 20010056450 A KR20010056450 A KR 20010056450A
- Authority
- KR
- South Korea
- Prior art keywords
- film
- region
- voltage device
- forming
- high voltage
- Prior art date
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- 238000002955 isolation Methods 0.000 title claims abstract description 35
- 239000004065 semiconductor Substances 0.000 title claims abstract description 29
- 238000000034 method Methods 0.000 title claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 150000004767 nitrides Chemical class 0.000 claims abstract description 26
- 238000005530 etching Methods 0.000 claims abstract description 6
- 239000012535 impurity Substances 0.000 claims abstract description 5
- 229920002120 photoresistant polymer Polymers 0.000 claims description 8
- 238000001039 wet etching Methods 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 238000000137 annealing Methods 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 230000003647 oxidation Effects 0.000 abstract 3
- 238000007254 oxidation reaction Methods 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 239000002210 silicon-based material Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
- H01L21/76205—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region
- H01L21/76208—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region using auxiliary pillars in the recessed region, e.g. to form LOCOS over extended areas
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Element Separation (AREA)
- Local Oxidation Of Silicon (AREA)
Abstract
Description
Claims (4)
- 반도체기판에 각각 정의되되, 트렌치에 의해 각 영역이 분리되어 있고, 각 영역의 반도체기판에는 웰영역과 드리프트영역이 형성되어 있고, 각 영역의 반도체기판 상에는 산화막과 질화막이 적층되어 있는 고전압소자영역과 저전압소자영역이 형성되어 있는 기판을 준비하는 공정과,상기 고전압소자영역의 일부에 대응되는 부분의 질화막을 선택적으로 제거하는 공정과,상기 질화막이 제거된 부분에 고전압소자영역의 필드산화막을 형성하는 공정과,상기 저전압소자영역의 일부에 대응되는 부분의 질화막을 선택적으로 제거하는 공정과,상기 질화막이 제거된 부분을 통하여 상기 반도체기판에 불순물을 주입한 후, 열처리를 진행하는 LOCOS에 의하여 소자격리막을 형성하는 공정을 포함하는 반도체장치의 소자격리막 형성방법.
- 청구항 1에 있어서,상기 필드산화막의 형성은,상기 질화막이 제거된 결과의 기판 전면에 HLD막을 증착하는 공정과,상기 질화막이 제거된 부분의 HLD막 상 필드산화막을 형성하기 위한 감과막패턴을 형성하는 공정과,상기 감광막패턴을 마스크로 상기 HLD막을 선택적으로 식각하는 공정을 포함하는 반도체장치의 소자격리막 형성방법.
- 청구항 2에 있어서,상기 HLD막을 1000Å이상의 두께로 형성하는 반도체장치의 소자격리막 형성방법.
- 청구항 2에 있어서,상기 HLD막의 식각은 습식식각법에 의하여 진행하는 반도체장치의 소자격리막 형성방법.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019990057907A KR100344779B1 (ko) | 1999-12-15 | 1999-12-15 | 반도체장치의 소자격리막 형성방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019990057907A KR100344779B1 (ko) | 1999-12-15 | 1999-12-15 | 반도체장치의 소자격리막 형성방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20010056450A true KR20010056450A (ko) | 2001-07-04 |
KR100344779B1 KR100344779B1 (ko) | 2002-07-20 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1019990057907A KR100344779B1 (ko) | 1999-12-15 | 1999-12-15 | 반도체장치의 소자격리막 형성방법 |
Country Status (1)
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KR (1) | KR100344779B1 (ko) |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
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KR980012123A (ko) * | 1996-07-18 | 1998-04-30 | 김광호 | 반도체 장치의 제조방법 |
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1999
- 1999-12-15 KR KR1019990057907A patent/KR100344779B1/ko active IP Right Grant
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KR100344779B1 (ko) | 2002-07-20 |
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