KR20010043310A - 삼불화염소가스발생기시스템 - Google Patents
삼불화염소가스발생기시스템 Download PDFInfo
- Publication number
- KR20010043310A KR20010043310A KR1020007012275A KR20007012275A KR20010043310A KR 20010043310 A KR20010043310 A KR 20010043310A KR 1020007012275 A KR1020007012275 A KR 1020007012275A KR 20007012275 A KR20007012275 A KR 20007012275A KR 20010043310 A KR20010043310 A KR 20010043310A
- Authority
- KR
- South Korea
- Prior art keywords
- gas
- chlorine
- chamber
- clf3
- chlorine trifluoride
- Prior art date
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- JOHWNGGYGAVMGU-UHFFFAOYSA-N trifluorochlorine Chemical compound FCl(F)F JOHWNGGYGAVMGU-UHFFFAOYSA-N 0.000 claims abstract description 63
- 238000000034 method Methods 0.000 claims abstract description 56
- 230000008569 process Effects 0.000 claims abstract description 47
- 238000006243 chemical reaction Methods 0.000 claims abstract description 46
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims abstract description 32
- 239000011737 fluorine Substances 0.000 claims abstract description 32
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 32
- 239000000460 chlorine Substances 0.000 claims abstract description 27
- 229910052801 chlorine Inorganic materials 0.000 claims abstract description 26
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims abstract description 24
- 239000007789 gas Substances 0.000 claims description 101
- 239000002243 precursor Substances 0.000 claims description 9
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 5
- 101100441092 Danio rerio crlf3 gene Proteins 0.000 claims 11
- 229910020323 ClF3 Inorganic materials 0.000 claims 10
- 239000007795 chemical reaction product Substances 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 238000009434 installation Methods 0.000 description 8
- 238000012423 maintenance Methods 0.000 description 6
- 239000007788 liquid Substances 0.000 description 5
- 239000011541 reaction mixture Substances 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 230000003068 static effect Effects 0.000 description 4
- 206010024769 Local reaction Diseases 0.000 description 3
- 239000006227 byproduct Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000003792 electrolyte Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 231100000331 toxic Toxicity 0.000 description 2
- 230000002588 toxic effect Effects 0.000 description 2
- 229910000906 Bronze Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910000792 Monel Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 230000027455 binding Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 231100000481 chemical toxicant Toxicity 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 230000009969 flowable effect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 229910001026 inconel Inorganic materials 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- QEHKBHWEUPXBCW-UHFFFAOYSA-N nitrogen trichloride Chemical compound ClN(Cl)Cl QEHKBHWEUPXBCW-UHFFFAOYSA-N 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 238000005382 thermal cycling Methods 0.000 description 1
- 239000003440 toxic substance Substances 0.000 description 1
Classifications
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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Abstract
Description
Claims (13)
- 삼불화염소가스가 발생될 수 있는 가스반응챔버내부로 염소 및 불소의 공급원이 연결되고, 삼불화염소가스를 공급하기 위해 밸브구조의 유출구가 상기 반응챔버에 구성되는 ClF3가스발생시스템.
- 제 1 항에 있어서, 염소가스가 압축된 실린더 또는 염소가스발생기가 염소공급원에 구성되는 것을 특징으로 하는 ClF3가스발생시스템.
- 제 1 항 또는 제2항에 있어서, 불소가스공급원이 불소가스발생기인 것을 특징으로 하는 ClF3가스발생시스템.
- 제 1 항 내지 제 3항 중 한 항에 있어서, 두 개의 공급원으로부터 가스공급속도를 제어하고 반응챔버로 부터 밸브구조의 유출구를 통해 가스공급속도를 제어하기 위해 제어시스템이 제공되는 것을 특징으로 하는 ClF3가스발생시스템.
- 제 1 항내지 제 4항중 한항에 있어서, 삼불화염소가스가 이용되는 고정챔버 또는 공정공구 또는 다중공구들에 반응챔버로부터 이동된 밸브구조의 유출구가 연결되는 것을 특징으로 하는 ClF3가스발생시스템.
- 제 5 항에 있어서, 공정챔버 또는 공구의 출력으로부터 감소기능공구가 연결되는 것을 특징으로 하는 ClF3가스발생시스템.
- 제 6 항에 있어서, 발생된 삼불화염소를 고정챔버 또는 공구에 공급하기 전에 안정한 조성 및/또는 유동에 대해 공정이 증가될 수 있도록 바이패스연결부가 반응챔버로 부터 감소기능공구까지 제공되는 것을 특징으로 하는 ClF3가스발생시스템.
- 제 6 항에 있어서, 삼불화염소가 연속적으로 발생하는 것이 필요할 때, 삼불화염소유동이 공정챔버내부로 유동가능하도록 반응챔버로 부터 감소기능공구까지 바이패스연결이 제공되는 것을 특징으로 하는 ClF3가스발생시스템.
- 제 1 항 내지 제 8항 중 한 항을 따르는 시스템을 이용하는 삼불화염소가스의 발생방법에 있어서, 공급원으로부터 반응챔버까지 선구가스가 공급되고, 결합반응이 수행되며, 삼불화염소반응제품이 국소 공정챔버 또는 공구에 공급되는 것을 특징으로 하는 ClF3가스발생시스템.
- 제 9 항에 있어서, 형성된 가스들이 염소/불소 가스혼합물에 의해 플라즈마챔버내부로 공급되고, 15-35%내지 20-30%사이의 염소수준이 형성되는 것을 특징으로 하는 ClF3가스발생시스템.
- 제 9 항에 있어서, 직접적인 소요가스유동이 공정시간을 감소시킬 수 있는 고정챔버내부에 추가 적인 ClFX가스가 제공되는 것을 특징으로 하는 ClF3가스발생시스템.
- 제 9 항에 있어서, 불소가스를 이용하여 가스선 및 반응기표면이 예비조정되는 것을 특징으로 하는 ClF3가스발생시스템.
- 첨부된 도면들은 참고하여 설명된 것과 같이 ClF3가스를 발생시키기 위한 가스발생시스템 또는 방법.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
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GBGB9904925.6A GB9904925D0 (en) | 1999-03-04 | 1999-03-04 | Gas delivery system |
GB9904925.6 | 1999-03-04 | ||
GBGB9909856.8A GB9909856D0 (en) | 1999-04-29 | 1999-04-29 | Chlorotrifluorine gas generator system |
GB9909856.8 | 1999-04-29 |
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KR20010043310A true KR20010043310A (ko) | 2001-05-25 |
KR100804853B1 KR100804853B1 (ko) | 2008-02-20 |
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US (1) | US6929784B1 (ko) |
EP (1) | EP1084076B1 (ko) |
JP (1) | JP4689841B2 (ko) |
KR (1) | KR100804853B1 (ko) |
AT (1) | ATE410395T1 (ko) |
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WO (1) | WO2000051938A1 (ko) |
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US6843258B2 (en) | 2000-12-19 | 2005-01-18 | Applied Materials, Inc. | On-site cleaning gas generation for process chamber cleaning |
EP1460678A4 (en) * | 2001-07-31 | 2010-01-06 | Air Liquide | CLEANING METHOD AND APPARATUS AND METHOD AND APPARATUS FOR ETCHING |
US20030121796A1 (en) * | 2001-11-26 | 2003-07-03 | Siegele Stephen H | Generation and distribution of molecular fluorine within a fabrication facility |
DE10229037A1 (de) | 2002-06-28 | 2004-01-29 | Robert Bosch Gmbh | Vorrichtung und Verfahren zur Erzeugung von Chlortrifluorid und Anlage zur Ätzung von Halbleitersubstraten mit dieser Vorrichtung |
US6841141B2 (en) * | 2002-09-26 | 2005-01-11 | Advanced Technology Materials, Inc. | System for in-situ generation of fluorine radicals and/or fluorine-containing interhalogen (XFn) compounds for use in cleaning semiconductor processing chambers |
JP2006049817A (ja) * | 2004-07-07 | 2006-02-16 | Showa Denko Kk | プラズマ処理方法およびプラズマエッチング方法 |
SG11201403527UA (en) * | 2012-02-08 | 2014-09-26 | Iwatani Corp | Method for treating inner surface of chlorine trifluoride supply passage in apparatus using chlorine trifluoride |
CN104477850B (zh) * | 2014-12-02 | 2016-08-24 | 中国船舶重工集团公司第七一八研究所 | 一种三氟化氯的制备方法及装置 |
US10899615B2 (en) * | 2016-04-05 | 2021-01-26 | Kanto Denka Kogyo Co., Ltd. | Feeding process of chlorine fluoride |
US10622214B2 (en) | 2017-05-25 | 2020-04-14 | Applied Materials, Inc. | Tungsten defluorination by high pressure treatment |
US10276411B2 (en) | 2017-08-18 | 2019-04-30 | Applied Materials, Inc. | High pressure and high temperature anneal chamber |
JP6947914B2 (ja) | 2017-08-18 | 2021-10-13 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 高圧高温下のアニールチャンバ |
KR102585074B1 (ko) * | 2017-11-11 | 2023-10-04 | 마이크로머티어리얼즈 엘엘씨 | 고압 프로세싱 챔버를 위한 가스 전달 시스템 |
JP2021503714A (ja) | 2017-11-17 | 2021-02-12 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 高圧処理システムのためのコンデンサシステム |
SG11202008256WA (en) | 2018-03-09 | 2020-09-29 | Applied Materials Inc | High pressure annealing process for metal containing materials |
US10950429B2 (en) | 2018-05-08 | 2021-03-16 | Applied Materials, Inc. | Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom |
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