ATE410395T1 - Chlortrifluorid- gasgeneratorsystem - Google Patents

Chlortrifluorid- gasgeneratorsystem

Info

Publication number
ATE410395T1
ATE410395T1 AT00907809T AT00907809T ATE410395T1 AT E410395 T1 ATE410395 T1 AT E410395T1 AT 00907809 T AT00907809 T AT 00907809T AT 00907809 T AT00907809 T AT 00907809T AT E410395 T1 ATE410395 T1 AT E410395T1
Authority
AT
Austria
Prior art keywords
sub
gas
chlortrifluoride
gas generator
generator system
Prior art date
Application number
AT00907809T
Other languages
English (en)
Inventor
Jyoti Bhardwaj
Nicholas Shepherd
Leslie Lea
Graham Hodgson
Original Assignee
Surface Technology Systems Plc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GBGB9904925.6A external-priority patent/GB9904925D0/en
Priority claimed from GBGB9909856.8A external-priority patent/GB9909856D0/en
Application filed by Surface Technology Systems Plc filed Critical Surface Technology Systems Plc
Application granted granted Critical
Publication of ATE410395T1 publication Critical patent/ATE410395T1/de

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B01J12/00—Chemical processes in general for reacting gaseous media with gaseous media; Apparatus specially adapted therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J12/00—Chemical processes in general for reacting gaseous media with gaseous media; Apparatus specially adapted therefor
    • B01J12/002—Chemical processes in general for reacting gaseous media with gaseous media; Apparatus specially adapted therefor carried out in the plasma state
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J12/00—Chemical processes in general for reacting gaseous media with gaseous media; Apparatus specially adapted therefor
    • B01J12/007—Chemical processes in general for reacting gaseous media with gaseous media; Apparatus specially adapted therefor in the presence of catalytically active bodies, e.g. porous plates
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
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    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J19/087—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy
    • B01J19/088—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy giving rise to electric discharges
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/24—Stationary reactors without moving elements inside
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B7/00—Halogens; Halogen acids
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    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C17/00—Preparation of halogenated hydrocarbons
    • G—PHYSICS
    • G01—MEASURING; TESTING
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    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
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    • G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H01L21/30655—Plasma etching; Reactive-ion etching comprising alternated and repeated etching and passivation steps, e.g. Bosch process
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    • H01L21/3081—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their composition, e.g. multilayer masks, materials
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
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    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
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    • Y10S422/906—Plasma or ion generation means

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  • Chemical & Material Sciences (AREA)
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  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Drying Of Semiconductors (AREA)
  • Treating Waste Gases (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
AT00907809T 1999-03-04 2000-03-06 Chlortrifluorid- gasgeneratorsystem ATE410395T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB9904925.6A GB9904925D0 (en) 1999-03-04 1999-03-04 Gas delivery system
GBGB9909856.8A GB9909856D0 (en) 1999-04-29 1999-04-29 Chlorotrifluorine gas generator system

Publications (1)

Publication Number Publication Date
ATE410395T1 true ATE410395T1 (de) 2008-10-15

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ID=26315215

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Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6843258B2 (en) 2000-12-19 2005-01-18 Applied Materials, Inc. On-site cleaning gas generation for process chamber cleaning
EP1460678A4 (de) * 2001-07-31 2010-01-06 Air Liquide Verfahren und vorrichtung zum reinigen und verfahren und vorrichtung zum ätzen
US20030121796A1 (en) * 2001-11-26 2003-07-03 Siegele Stephen H Generation and distribution of molecular fluorine within a fabrication facility
DE10229037A1 (de) 2002-06-28 2004-01-29 Robert Bosch Gmbh Vorrichtung und Verfahren zur Erzeugung von Chlortrifluorid und Anlage zur Ätzung von Halbleitersubstraten mit dieser Vorrichtung
US6841141B2 (en) * 2002-09-26 2005-01-11 Advanced Technology Materials, Inc. System for in-situ generation of fluorine radicals and/or fluorine-containing interhalogen (XFn) compounds for use in cleaning semiconductor processing chambers
JP2006049817A (ja) * 2004-07-07 2006-02-16 Showa Denko Kk プラズマ処理方法およびプラズマエッチング方法
SG11201403527UA (en) * 2012-02-08 2014-09-26 Iwatani Corp Method for treating inner surface of chlorine trifluoride supply passage in apparatus using chlorine trifluoride
CN104477850B (zh) * 2014-12-02 2016-08-24 中国船舶重工集团公司第七一八研究所 一种三氟化氯的制备方法及装置
US10899615B2 (en) * 2016-04-05 2021-01-26 Kanto Denka Kogyo Co., Ltd. Feeding process of chlorine fluoride
US10622214B2 (en) 2017-05-25 2020-04-14 Applied Materials, Inc. Tungsten defluorination by high pressure treatment
US10276411B2 (en) 2017-08-18 2019-04-30 Applied Materials, Inc. High pressure and high temperature anneal chamber
JP6947914B2 (ja) 2017-08-18 2021-10-13 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 高圧高温下のアニールチャンバ
KR102585074B1 (ko) * 2017-11-11 2023-10-04 마이크로머티어리얼즈 엘엘씨 고압 프로세싱 챔버를 위한 가스 전달 시스템
JP2021503714A (ja) 2017-11-17 2021-02-12 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 高圧処理システムのためのコンデンサシステム
SG11202008256WA (en) 2018-03-09 2020-09-29 Applied Materials Inc High pressure annealing process for metal containing materials
US10950429B2 (en) 2018-05-08 2021-03-16 Applied Materials, Inc. Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom
US10748783B2 (en) 2018-07-25 2020-08-18 Applied Materials, Inc. Gas delivery module
WO2020117462A1 (en) 2018-12-07 2020-06-11 Applied Materials, Inc. Semiconductor processing system
US11901222B2 (en) 2020-02-17 2024-02-13 Applied Materials, Inc. Multi-step process for flowable gap-fill film
CN114715850A (zh) * 2021-01-04 2022-07-08 欧中电子材料（重庆）有限公司 一种高收率合成三氟化氯的方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3876754A (en) * 1964-06-09 1975-04-08 North American Rockwell Preparation of chlorine pentafluoride
US3976757A (en) * 1964-08-12 1976-08-24 Allied Chemical Corporation Method for increasing the productivity of chemical reactors
GB1268377A (en) * 1968-06-17 1972-03-29 James Ephraim Lovelock An improved method for cleaning articles
US4310380A (en) * 1980-04-07 1982-01-12 Bell Telephone Laboratories, Incorporated Plasma etching of silicon
JPH0397228A (ja) * 1989-09-11 1991-04-23 Hitachi Ltd 半導体装置の製造方法
JPH04280987A (ja) * 1991-03-06 1992-10-06 Central Glass Co Ltd クリーニング装置
GB9418598D0 (en) * 1994-09-14 1994-11-02 British Nuclear Fuels Plc Fluorine cell
JPH0980193A (ja) * 1995-09-13 1997-03-28 Hitachi Ltd 使用済燃料の再処理方法
GB9626329D0 (en) * 1996-12-19 1997-02-05 British Nuclear Fuels Plc Improvements in and relating to the storage, transportation and production of active fluoride
JP2823555B2 (ja) * 1997-08-12 1998-11-11 セントラル硝子株式会社 薄膜形成装置の表面清浄に三フッ化塩素を用いる方法
KR100271763B1 (ko) * 1997-12-05 2001-02-01 윤종용 폴리실리콘식각방법및그식각장치
US6841141B2 (en) * 2002-09-26 2005-01-11 Advanced Technology Materials, Inc. System for in-situ generation of fluorine radicals and/or fluorine-containing interhalogen (XFn) compounds for use in cleaning semiconductor processing chambers

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US6929784B1 (en) 2005-08-16
DE60040443D1 (de) 2008-11-20
WO2000051938A1 (en) 2000-09-08
KR20010043310A (ko) 2001-05-25
EP1084076A1 (de) 2001-03-21
KR100804853B1 (ko) 2008-02-20
EP1084076B1 (de) 2008-10-08
JP4689841B2 (ja) 2011-05-25
JP2002538068A (ja) 2002-11-12

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