KR20010009968A - 반도체 박막 증착 장치 - Google Patents
반도체 박막 증착 장치 Download PDFInfo
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- KR20010009968A KR20010009968A KR1019990028609A KR19990028609A KR20010009968A KR 20010009968 A KR20010009968 A KR 20010009968A KR 1019990028609 A KR1019990028609 A KR 1019990028609A KR 19990028609 A KR19990028609 A KR 19990028609A KR 20010009968 A KR20010009968 A KR 20010009968A
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- Prior art keywords
- wafer
- reaction chamber
- thin film
- film deposition
- deposition apparatus
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- 238000000427 thin-film deposition Methods 0.000 title claims abstract description 42
- 239000004065 semiconductor Substances 0.000 title claims abstract description 39
- 235000012431 wafers Nutrition 0.000 claims abstract description 147
- 239000007789 gas Substances 0.000 claims abstract description 57
- 238000000034 method Methods 0.000 claims abstract description 45
- 238000010438 heat treatment Methods 0.000 claims abstract description 33
- 238000005086 pumping Methods 0.000 claims abstract description 27
- 239000010409 thin film Substances 0.000 claims abstract description 21
- 239000012495 reaction gas Substances 0.000 claims abstract description 11
- 238000000151 deposition Methods 0.000 claims abstract description 7
- 238000005507 spraying Methods 0.000 claims abstract description 5
- 239000011261 inert gas Substances 0.000 claims description 25
- 229910052736 halogen Inorganic materials 0.000 claims description 17
- 150000002367 halogens Chemical class 0.000 claims description 16
- 239000000376 reactant Substances 0.000 claims description 14
- 238000002347 injection Methods 0.000 claims description 5
- 239000007924 injection Substances 0.000 claims description 5
- 238000007599 discharging Methods 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 3
- 238000011109 contamination Methods 0.000 claims description 2
- 125000005843 halogen group Chemical group 0.000 claims 1
- 230000000630 rising effect Effects 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 17
- 238000003877 atomic layer epitaxy Methods 0.000 description 10
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000001276 controlling effect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 208000028659 discharge Diseases 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 239000012429 reaction media Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 230000005236 sound signal Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45519—Inert gas curtains
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
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- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (26)
- 반응실 내에 웨이퍼를 넣고 반응기체를 분사하여 박막을 증착하는 장치에 있어서,상기 반응실은 웨이퍼 이송수단으로부터 이송된 다수의 웨이퍼가 안착되는 서셉터, 반응실내로 반응기체를 분사하는 기체공급부, 웨이퍼를 가열하는 웨이퍼가열부, 반응실 내부를 가열하기 위한 반응실가열부로 구성되고,상기 박막 증착 장치는서셉터에 웨이퍼를 안착시키기 위하여 웨이퍼 이송수단으로부터 공급된 웨이퍼를 상하로 이송하기 위한 웨이퍼 이동용 상하 운동부,서셉터에 안착된 다수의 웨이퍼를 회전시키거나 상하로 이동하는 회전 운동부,서셉터 위에 안착된 웨이퍼를 일정한 온도로 가열하기 위한 웨이퍼 가열부,웨이퍼 위에 반응기체를 이송하기 위한 기체 이송부,반응실 내의 반응기체를 일정한 압력으로 제어하고, 웨이퍼가 투입되기 전의 낮은 진공상태로 반응실 내부를 유지하기 위한 진공 펌핑부를 포함하는 반도체 박막 증착장치.
- 제1항에 있어서, 상기 서셉터는 다수의 웨이퍼가 안착될 수 있는 다수의 스테이션으로 구성되는 반도체 박막 증착장치.
- 제2항에 있어서, 상기 스테이션은 웨이퍼의 직경보다 작은 직경의 개구부로서, 웨이퍼의 에지로부터 3~5mm 지점이 접촉할 수 있도록 단차가 형성되어 있는 것을 특징으로 하는 반도체 박막 증착장치.
- 제3항에 있어서, 상기 스테이션의 단차높이는 웨이퍼의 두께와 같거나 그 보다 작은 것을 특징으로 하는 반도체 박막 증착장치.
- 제2~4항 중 어느 한 항에 있어서, 상기 스테이션은 4개인 것을 특징으로 하는 반도체 박막 증착장치.
- 제1항에 있어서, 기체공급부는 반응실의 상부 중앙에 설치되어 반응실 내로 반응기체를 분사하는 노즐인 것을 특징으로 하는 반도체 박막 증착장치.
- 제6항에 있어서, 기체공급부는 복수 종류의 반응기체가 공급되는 복수의 공급관을 추가로 포함하는 것을 특징으로 하는 반도체 박막 증착장치.
- 제1항에 있어서, 웨이퍼가열부는 할로겐램프 히터인 것을 특징으로 하는 반도체 박막 증착장치.
- 제8항에 있어서, 할로겐램프 히터는 서셉터의 하부에 복수개 설치되어 각 할로겐램프 히터별로 독립적으로 온도제어되는 것을 특징으로 하는 반도체 박막 증착장치.
- 제8항 또는 제9항에 있어서, 반응기체에 의해 할로겐램프 히터의 표면이 오염되는 것을 방지하기 위하여 할로겐램프 히터에 불활성기체를 분사하는 불활성기체 분사부를 추가로 포함하는 반도체 박막 증착장치.
- 제1항에 있어서, 반응실가열부는 반응실의 상부에 복수개 삽입되어 반응실 내부를 가열하는 카트리지식 히터인 것을 특징으로 하는 반도체 박막 증착장치.
- 제1항에 있어서, 반응실가열부는 반응실의 측면에 복수개 삽입되어 반응실 내부를 가열하는 카트리지식 히터인 것을 특징으로 하는 반도체 박막 증착장치.
- 제1항에 있어서, 반응실의 내부 천장면이 반응기체와 반응하여 부식되는 것을 방지하기 위하여 실드가 추가로 포함되는 반도체 박막 증착장치.
- 제13항에 있어서, 상기 실드와 반응실의 내부 천장면 사이의 간격은 약 0.5~1mm인 것을 특징으로 하는 반도체 박막 증착장치.
- 제13항 또는 제14항에 있어서, 상기 실드와 반응실의 내부 천장면 사이에 반응기체가 유입되어 반응실을 부식시키는 것을 방지하기 위하여, 실드와 반응실 내부 천장면 사이에 불활성 기체를 분사하는 불활성기체 분사구를 추가로 포함하는 반도체 박막 증착장치.
- 제1항에 있어서, 상기 웨이퍼 이동용 상하 운동부는 최상부에 평평한 형상으로 상.하 운동하는 리프트 플레이트(202)와, 리프트 플레이트(202)에 삽입되어 웨이퍼와 접촉되는 웨이퍼 이송용 핀(201)으로 구성되어, 웨이퍼가 반응실에 투입될 때에 상기 리프트 플레이트(202)에 삽입된 웨이퍼 이송용 핀(201)이 리프트 플레이트와 함께 위로 올라와 웨이퍼를 받아 서셉터의 소정 위치에 웨이퍼를 안착 시키는 것을 특징으로 하는 반도체 박막 증착장치.
- 제16항에 있어서, 웨이퍼 이송용 핀은 3개인 것을 특징으로 하는 반도체 박막 증착장치.
- 제1항에 있어서, 회전운동부는 서셉터의 축에 고정되어, 웨이퍼를 서셉터의 정해진 스테이션에 놓기 위해 서셉터를 일정주기로 인덱스 회전시키고, 공정 중 필요에 따라 단순회전시키고, 웨이퍼를 반응실 상부로 상승시키는 것을 특징으로 하는 반도체 박막 증착장치.
- 제1항에 있어서, 기체이송부는제1반응기체가 액상의 상태로 저장되어 있는 제1반응원 저장고, 제1반응원 저장고에 불활성기체를 유입 시키는 제1유입관, 제1반응원 저장고에 유입된 불활성기체에 의해 기화된 제1반응기체를 유출하는 제1유출관, 제1유입관으로 부터 제1유출관에 직접 연결된 제1분기관 및제2반응기체가 액상의 상태로 저장되어 있는 제2반응원 저장고, 제2반응원 저장고에 불활성기체를 유입시키는 제2유입관, 제2반응원 저장고에 유입된 불활성기체에 의해 기화된 제2반응기체를 유출하는 제2유출관, 제2유입관으로부터 제2유출관에 직접 연결된 제2분기관을 포함하는 것을 특징으로 하는 반도체 박막 증착장치.
- 제19항에 있어서, 제1유출관과 제2유출관은 각각 반응실과 연결되는 관과 펌프쪽으로 연결되는 관으로 분기되는 것을 특징으로 하는 반도체 박막 증착장치.
- 제19항 또는 제20항에 있어서, 상기 제1유입관과 제2유입관의 유입구 및 상기 제1유출구와 제2유출구의 유출구를 연결하는 캐리어관을 추가로 포함하는 반도체 박막 증착장치.
- 제19항 또는 20항에 있어서, 상기 제1유출관과 제2유출관의 온도를 가열하기 위한 가열수단을 추가로 포함하는 반도체 박막 증착장치.
- 제19항 또는 20항에 있어서,상기 제1유입관과 상기 제1반응원 저장고 사이, 제1유출구와 반응실 사이, 상기 제2유입관과 제2반응원 저장고 사이, 제2유출구와 반응실 사이에 기체의 역류를 방지하는 체크밸브와 공기압에 의해 작동하는 공압 밸브가 연결되고,상기 제1유출관과 펌프 사이, 제2유출관과 펌프 사이에 오리피스가 연결되는 것을 특징으로 하는 반도체 박막 증착장치.
- 제20항에 있어서, 상기 제1유출구 또는 제2유출구로 반응기체가 분사되는 시점을 서로 교번적으로 제어하여, 어느 한 시점에서 볼 때에 반응실 내로는 어느 한 반응기체만 분사되는 것을 특징으로 하는 반도체 박막 증착장치.
- 제24항에 있어서, 상기 제1유출구 또는 제2유출구로 반응기체가 유출되지 않는 시점에는 상기 제1분기관 또는 제2분기관을 통해 불활성 기체를 통과시켜 상기 제1유출구 또는 제2유출구를 세정하는 것을 특징으로 하는 반도체 박막 증착장치.
- 제1항에 있어서, 진공펌핑부는 반응실 내의 기체를 일차로 배출하는 1차펌핑홀, 상기 1차펌핑홀을 통해 배출된 기체를 집속하는 2차펌핑홀, 상기 2차펌핑홀을 통해 배출된 기체를 집속하여 외부의 진공펌프에서 배출하는 주펌핑홀을 포함하는 것을 특징으로 하는 반도체 박막 증착장치.
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KR1019990028609A KR100319494B1 (ko) | 1999-07-15 | 1999-07-15 | 원자층 에피택시 공정을 위한 반도체 박막 증착장치 |
TW089113654A TW466587B (en) | 1999-07-15 | 2000-07-10 | Apparatus for deposition of thin films on wafers through atomic layer epitaxial process |
JP2000210062A JP3252960B2 (ja) | 1999-07-15 | 2000-07-11 | 原子層エピタキシー工程のための半導体薄膜蒸着装置 |
US09/614,718 US6306216B1 (en) | 1999-07-15 | 2000-07-12 | Apparatus for deposition of thin films on wafers through atomic layer epitaxial process |
DE60043481T DE60043481D1 (de) | 1999-07-15 | 2000-07-12 | Vorrichtung zur Abscheidung von Dünnschichten auf Wafern |
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- 2000-07-12 EP EP00115133A patent/EP1069599B1/en not_active Expired - Lifetime
- 2000-07-12 DE DE60043481T patent/DE60043481D1/de not_active Expired - Lifetime
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KR100399067B1 (ko) * | 2000-12-30 | 2003-09-26 | 주식회사 하이닉스반도체 | 원자층 증착 장치 |
KR100422396B1 (ko) * | 2001-06-29 | 2004-03-12 | 주식회사 하이닉스반도체 | 원자층 증착법을 이용한 반도체 소자의 박막 형성 방법 |
KR100542583B1 (ko) * | 2002-04-11 | 2006-01-11 | 주식회사 메카로닉스 | 화학기상증착 장비의 글라스 지지용 서셉터 |
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KR100954243B1 (ko) * | 2004-06-28 | 2010-04-23 | 도쿄엘렉트론가부시키가이샤 | 반도체 처리용 성막 장치 및 방법과 컴퓨터로 판독 가능한 매체 |
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Also Published As
Publication number | Publication date |
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US6306216B1 (en) | 2001-10-23 |
EP1069599A3 (en) | 2002-12-04 |
EP1069599B1 (en) | 2009-12-09 |
JP2001068423A (ja) | 2001-03-16 |
EP1069599A2 (en) | 2001-01-17 |
DE60043481D1 (de) | 2010-01-21 |
JP3252960B2 (ja) | 2002-02-04 |
TW466587B (en) | 2001-12-01 |
KR100319494B1 (ko) | 2002-01-09 |
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