KR20000035735A - 기동 회로 및 반도체 집적 회로 장치 - Google Patents

기동 회로 및 반도체 집적 회로 장치 Download PDF

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Publication number
KR20000035735A
KR20000035735A KR1019990053134A KR19990053134A KR20000035735A KR 20000035735 A KR20000035735 A KR 20000035735A KR 1019990053134 A KR1019990053134 A KR 1019990053134A KR 19990053134 A KR19990053134 A KR 19990053134A KR 20000035735 A KR20000035735 A KR 20000035735A
Authority
KR
South Korea
Prior art keywords
voltage
circuit
transistor
potential power
mos transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
KR1019990053134A
Other languages
English (en)
Korean (ko)
Inventor
고바야시이사무
스가모토히로유키
Original Assignee
아끼구사 나오유끼
후지쯔 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 아끼구사 나오유끼, 후지쯔 가부시끼가이샤 filed Critical 아끼구사 나오유끼
Publication of KR20000035735A publication Critical patent/KR20000035735A/ko
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/22—Modifications for ensuring a predetermined initial state when the supply voltage has been applied
    • H03K17/223—Modifications for ensuring a predetermined initial state when the supply voltage has been applied in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/22—Modifications for ensuring a predetermined initial state when the supply voltage has been applied

Landscapes

  • Electronic Switches (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Dram (AREA)
KR1019990053134A 1998-11-27 1999-11-26 기동 회로 및 반도체 집적 회로 장치 Abandoned KR20000035735A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP98-336962 1998-11-27
JP10336962A JP2000165220A (ja) 1998-11-27 1998-11-27 起動回路及び半導体集積回路装置

Publications (1)

Publication Number Publication Date
KR20000035735A true KR20000035735A (ko) 2000-06-26

Family

ID=18304227

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019990053134A Abandoned KR20000035735A (ko) 1998-11-27 1999-11-26 기동 회로 및 반도체 집적 회로 장치

Country Status (4)

Country Link
US (1) US6469551B2 (enExample)
JP (1) JP2000165220A (enExample)
KR (1) KR20000035735A (enExample)
TW (1) TW530456B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190130504A (ko) * 2018-05-14 2019-11-22 에이에스엠 아이피 홀딩 비.브이. 절연 시스템 및 기판 처리 장치

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3987674B2 (ja) * 2000-06-01 2007-10-10 富士通株式会社 半導体集積回路
US6673171B2 (en) * 2000-09-01 2004-01-06 United States Steel Corporation Medium carbon steel sheet and strip having enhanced uniform elongation and method for production thereof
JP4790925B2 (ja) * 2001-03-30 2011-10-12 富士通セミコンダクター株式会社 アドレス発生回路
DE10135964B4 (de) * 2001-07-24 2005-02-24 Infineon Technologies Ag Schaltungsbaustein mit hochfrequenten Ein-/Ausgabeschnittstellen
JP2003163588A (ja) * 2001-11-28 2003-06-06 Fujitsu Ltd 起動回路
US6852935B2 (en) 2002-10-30 2005-02-08 Itron, Inc. Tilt switch
KR100583097B1 (ko) * 2002-12-31 2006-05-23 주식회사 하이닉스반도체 파워 업 검출 장치
US7126391B1 (en) 2003-07-16 2006-10-24 Cypress Semiconductor Corporation Power on reset circuits
US7078944B1 (en) * 2003-07-16 2006-07-18 Cypress Semiconductor Corporation Power on reset circuit
KR100566302B1 (ko) * 2003-10-31 2006-03-30 주식회사 하이닉스반도체 파워업 신호 발생 장치
KR100554840B1 (ko) * 2003-11-13 2006-03-03 주식회사 하이닉스반도체 파워 업 신호 발생 회로
JP4025286B2 (ja) * 2003-12-26 2007-12-19 東芝マイクロエレクトロニクス株式会社 半導体装置
KR100650816B1 (ko) * 2004-02-19 2006-11-27 주식회사 하이닉스반도체 내부 회로 보호 장치
US7023248B2 (en) * 2004-05-27 2006-04-04 Intel Corporation High voltage tolerant power up detector
US7142024B2 (en) * 2004-11-01 2006-11-28 Stmicroelectronics, Inc. Power on reset circuit
JP2007142844A (ja) * 2005-11-18 2007-06-07 Toshiba Corp パワーオン電源電位検知回路
US7755419B2 (en) 2006-01-17 2010-07-13 Cypress Semiconductor Corporation Low power beta multiplier start-up circuit and method
US7830200B2 (en) * 2006-01-17 2010-11-09 Cypress Semiconductor Corporation High voltage tolerant bias circuit with low voltage transistors
US7265595B1 (en) 2006-03-03 2007-09-04 Cypress Semiconductor Corporation Stochastic reset circuit
US20070216453A1 (en) * 2006-03-16 2007-09-20 Hemant Vispute Power-on reset signal generation circuit and method
KR100791075B1 (ko) * 2006-11-15 2008-01-03 삼성전자주식회사 파워 업 리셋 회로 및 이를 구비한 반도체 장치
US8154942B1 (en) * 2008-11-17 2012-04-10 Altera Corporation Integrated circuits with fuse programming and sensing circuitry
JP2010147979A (ja) * 2008-12-22 2010-07-01 Elpida Memory Inc 半導体装置およびパワーオンリセット回路の調整方法
JP5888954B2 (ja) * 2011-12-05 2016-03-22 ローム株式会社 電圧検出回路
US9374094B1 (en) * 2014-08-27 2016-06-21 Altera Corporation 3D field programmable gate array system with reset manufacture and method of manufacture thereof
JP6253551B2 (ja) * 2014-08-29 2017-12-27 オリンパス株式会社 撮像素子、撮像装置、内視鏡および内視鏡システム

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05121686A (ja) * 1991-10-25 1993-05-18 Toshiba Corp 半導体集積回路
JPH09148909A (ja) * 1995-11-17 1997-06-06 Hitachi Ltd 半導体集積回路装置
JPH10229332A (ja) * 1996-12-03 1998-08-25 Sgs Thomson Microelectron Inc トランジスタのスレッシュホールド電圧を積極的にバイアスする集積回路及び関連方法
JPH10294664A (ja) * 1997-04-21 1998-11-04 Fujitsu Ltd 定電流回路

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4013902A (en) * 1975-08-06 1977-03-22 Honeywell Inc. Initial reset signal generator and low voltage detector
DE3373759D1 (en) * 1982-06-09 1987-10-22 Fujitsu Ltd One-chip semiconductor device incorporating a power-supply-potential detecting circuit with reset function
US5334885A (en) 1993-01-13 1994-08-02 At&T Bell Laboratories Automatic control of buffer speed
US5534804A (en) * 1995-02-13 1996-07-09 Advanced Micro Devices, Inc. CMOS power-on reset circuit using hysteresis
US5703512A (en) * 1995-06-06 1997-12-30 Sgs-Thomson Microelectronics, Inc. Method and apparatus for test mode entry during power up

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05121686A (ja) * 1991-10-25 1993-05-18 Toshiba Corp 半導体集積回路
JPH09148909A (ja) * 1995-11-17 1997-06-06 Hitachi Ltd 半導体集積回路装置
JPH10229332A (ja) * 1996-12-03 1998-08-25 Sgs Thomson Microelectron Inc トランジスタのスレッシュホールド電圧を積極的にバイアスする集積回路及び関連方法
JPH10294664A (ja) * 1997-04-21 1998-11-04 Fujitsu Ltd 定電流回路

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190130504A (ko) * 2018-05-14 2019-11-22 에이에스엠 아이피 홀딩 비.브이. 절연 시스템 및 기판 처리 장치

Also Published As

Publication number Publication date
JP2000165220A (ja) 2000-06-16
US20020027460A1 (en) 2002-03-07
TW530456B (en) 2003-05-01
US6469551B2 (en) 2002-10-22

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Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 19991126

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Patent event code: PA02012R01D

Patent event date: 20040112

Comment text: Request for Examination of Application

Patent event code: PA02011R01I

Patent event date: 19991126

Comment text: Patent Application

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Patent event date: 20050725

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20060325

NORF Unpaid initial registration fee
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