KR20000003757A - Ips 모드 액정 표시 소자의 제조방법 - Google Patents
Ips 모드 액정 표시 소자의 제조방법 Download PDFInfo
- Publication number
- KR20000003757A KR20000003757A KR1019980025029A KR19980025029A KR20000003757A KR 20000003757 A KR20000003757 A KR 20000003757A KR 1019980025029 A KR1019980025029 A KR 1019980025029A KR 19980025029 A KR19980025029 A KR 19980025029A KR 20000003757 A KR20000003757 A KR 20000003757A
- Authority
- KR
- South Korea
- Prior art keywords
- silicon nitride
- nitride film
- liquid crystal
- crystal display
- photoresist
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 13
- 239000004973 liquid crystal related substance Substances 0.000 title abstract description 23
- 238000004519 manufacturing process Methods 0.000 title abstract description 10
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 29
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 29
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 238000005530 etching Methods 0.000 claims abstract description 12
- 239000011521 glass Substances 0.000 claims abstract description 11
- 238000000151 deposition Methods 0.000 claims abstract description 3
- 238000004380 ashing Methods 0.000 claims description 2
- 238000001020 plasma etching Methods 0.000 claims description 2
- 230000007547 defect Effects 0.000 abstract description 5
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 28
- 229920001721 polyimide Polymers 0.000 description 8
- 239000004642 Polyimide Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 1
- 210000004027 cell Anatomy 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 210000002858 crystal cell Anatomy 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optics & Photonics (AREA)
- Power Engineering (AREA)
- Liquid Crystal (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
Abstract
Description
Claims (3)
- 공통 전극 및 화소 전극들이 형성된 유리 기판 전면 상에 상기 전극들의 두께 보다 더 두껍게 실리콘 질화막을 증착하는 단계;상기 실리콘 질화막 상에 포토 레지스트를 도포하는 단계;상기 포토 레지스트와 그 하부에 증착된 실리콘 질화막의 상부면 소정 두께를 동일한 식각 속도로 연속적으로 식각하여 상기 실리콘 질화막을 평탄화시키는 단계; 및상기 평탄화된 실리콘 질화막 상에 배향막을 형성하는 단계를 포함하는 것을 특징으로 하는 IPS 모드 액적 표시 소자의 제조방법.
- 제 1 항에 있어서, 상기 포토 레지스트의 식각은 O2가스를 이용한 플라즈마 에싱 공정으로 진행하는 것을 특징으로 하는 IPS 모드 액정 표시 소자의 제조방법.
- 제 1 항에 있어서, 상기 실리콘 질화막의 식각은 SF6가스를 이용한 플라즈마 식각 공정으로 진행하는 것을 특징으로 하는 IPS 모드 액정 표시 소자의 제조방법.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019980025029A KR100687318B1 (ko) | 1998-06-29 | 1998-06-29 | Ips 모드 액정 표시 소자의 제조방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019980025029A KR100687318B1 (ko) | 1998-06-29 | 1998-06-29 | Ips 모드 액정 표시 소자의 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20000003757A true KR20000003757A (ko) | 2000-01-25 |
KR100687318B1 KR100687318B1 (ko) | 2007-05-17 |
Family
ID=19541541
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019980025029A KR100687318B1 (ko) | 1998-06-29 | 1998-06-29 | Ips 모드 액정 표시 소자의 제조방법 |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR100687318B1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8395735B2 (en) | 2008-08-12 | 2013-03-12 | Samsung Display Co., Ltd. | Liquid crystal display device and method of manufacturing the same |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01292315A (ja) * | 1988-05-19 | 1989-11-24 | Fujitsu Ltd | 液晶表示パネル |
JP3240858B2 (ja) * | 1994-10-19 | 2001-12-25 | ソニー株式会社 | カラー表示装置 |
JP2864464B2 (ja) * | 1994-12-22 | 1999-03-03 | 日本ビクター株式会社 | 反射型アクティブ・マトリクス・ディスプレイ・パネル及びその製造方法 |
KR100244450B1 (ko) * | 1996-08-30 | 2000-02-01 | 구본준 | 액정표시장치의 기판의 제조방법 및 그 제조방법에 의하여 제조 되는 기판의 구조 |
-
1998
- 1998-06-29 KR KR1019980025029A patent/KR100687318B1/ko not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8395735B2 (en) | 2008-08-12 | 2013-03-12 | Samsung Display Co., Ltd. | Liquid crystal display device and method of manufacturing the same |
Also Published As
Publication number | Publication date |
---|---|
KR100687318B1 (ko) | 2007-05-17 |
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