KR102936751B1 - 반도체 릴레이 및 반도체 장치 - Google Patents

반도체 릴레이 및 반도체 장치

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Publication number
KR102936751B1
KR102936751B1 KR1020217035421A KR20217035421A KR102936751B1 KR 102936751 B1 KR102936751 B1 KR 102936751B1 KR 1020217035421 A KR1020217035421 A KR 1020217035421A KR 20217035421 A KR20217035421 A KR 20217035421A KR 102936751 B1 KR102936751 B1 KR 102936751B1
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South Korea
Prior art keywords
light
transistor
emitting element
semiconductor
circuit
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KR1020217035421A
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Korean (ko)
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KR20210154173A (ko
Inventor
시게루 오노야
노보루 이노우에
타카히로 후쿠토메
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
    • H10F55/25—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
    • H10F55/255—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices formed in, or on, a common substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H03K17/785—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling field-effect transistor switches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D87/00—Integrated devices comprising both bulk components and either SOI or SOS components on the same substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
    • H10F55/25—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices

Landscapes

  • Thin Film Transistor (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
KR1020217035421A 2019-04-18 2020-04-07 반도체 릴레이 및 반도체 장치 Active KR102936751B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019079044 2019-04-18
JPJP-P-2019-079044 2019-04-18
PCT/IB2020/053291 WO2020212800A1 (ja) 2019-04-18 2020-04-07 半導体リレー、および半導体装置

Publications (2)

Publication Number Publication Date
KR20210154173A KR20210154173A (ko) 2021-12-20
KR102936751B1 true KR102936751B1 (ko) 2026-03-11

Family

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Family Applications (1)

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KR1020217035421A Active KR102936751B1 (ko) 2019-04-18 2020-04-07 반도체 릴레이 및 반도체 장치

Country Status (5)

Country Link
US (1) US11758745B2 (https=)
JP (1) JP7669267B2 (https=)
KR (1) KR102936751B1 (https=)
CN (1) CN113646905A (https=)
WO (1) WO2020212800A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20240093546A (ko) 2021-10-27 2024-06-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
CN115361008A (zh) * 2022-08-02 2022-11-18 福建省福芯电子科技有限公司 光控驱动电路、固态继电器、半导体装置
JP2024063929A (ja) * 2022-10-27 2024-05-14 株式会社東芝 半導体装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130265098A1 (en) * 2012-04-06 2013-10-10 Semiconductor Energy Laboratory Co., Ltd. Solid-state relay
US20130299841A1 (en) * 2012-05-11 2013-11-14 Infineon Technologies Austria Ag GaN-Based Optocoupler
US20190027436A1 (en) 2017-07-20 2019-01-24 Avago Technologies General Ip (Singapore) Pte. Ltd. Isolation devices with faraday shields

Family Cites Families (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS605142B2 (ja) * 1977-05-11 1985-02-08 株式会社日立製作所 半導体スイツチング装置
US5753928A (en) * 1993-09-30 1998-05-19 Siemens Components, Inc. Monolithic optical emitter-detector
JP2000106523A (ja) 1998-09-29 2000-04-11 Matsushita Electric Works Ltd 半導体リレー及びその製造方法
TW457767B (en) 1999-09-27 2001-10-01 Matsushita Electric Works Ltd Photo response semiconductor switch having short circuit load protection
JP3498694B2 (ja) * 1999-09-27 2004-02-16 松下電工株式会社 光応答型半導体スイッチ
JP3775574B2 (ja) 2001-05-22 2006-05-17 シャープ株式会社 光結合装置
JP2003115751A (ja) * 2001-10-09 2003-04-18 Matsushita Electric Works Ltd 半導体スイッチ素子の駆動回路及びそれを備えた半導体リレー
JP4373063B2 (ja) 2002-09-02 2009-11-25 株式会社半導体エネルギー研究所 電子回路装置
JP3837372B2 (ja) 2002-09-19 2006-10-25 株式会社東芝 半導体リレー
JP5759669B2 (ja) 2008-12-01 2015-08-05 株式会社半導体エネルギー研究所 発光素子、発光装置、電子機器、および照明装置
TWI522007B (zh) 2008-12-01 2016-02-11 半導體能源研究所股份有限公司 發光元件、發光裝置、照明裝置、及電子裝置
CN102450101B (zh) 2009-05-29 2015-12-16 株式会社半导体能源研究所 发光元件、发光装置、电子设备以及照明装置
US8389979B2 (en) 2009-05-29 2013-03-05 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, electronic device, and lighting device
JP2009302587A (ja) * 2009-09-29 2009-12-24 Toshiba Corp 半導体発光装置
JP5264865B2 (ja) 2010-03-31 2013-08-14 富士フイルム株式会社 光電変換素子及び撮像素子
WO2011162105A1 (en) 2010-06-25 2011-12-29 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, display, and electronic device
US9269921B2 (en) 2010-10-20 2016-02-23 Semiconductor Energy Laboratory Co., Ltd. Lighting device
JP5897876B2 (ja) 2010-11-19 2016-04-06 株式会社半導体エネルギー研究所 照明装置
TWI575494B (zh) 2011-08-19 2017-03-21 半導體能源研究所股份有限公司 半導體裝置的驅動方法
WO2013099537A1 (en) 2011-12-26 2013-07-04 Semiconductor Energy Laboratory Co., Ltd. Motion recognition device
US9324449B2 (en) 2012-03-28 2016-04-26 Semiconductor Energy Laboratory Co., Ltd. Driver circuit, signal processing unit having the driver circuit, method for manufacturing the signal processing unit, and display device
JP6227890B2 (ja) 2012-05-02 2017-11-08 株式会社半導体エネルギー研究所 信号処理回路および制御回路
US9916793B2 (en) 2012-06-01 2018-03-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving the same
JP5806994B2 (ja) * 2012-09-21 2015-11-10 株式会社東芝 光結合装置
JP5807076B2 (ja) 2013-01-24 2015-11-10 株式会社半導体エネルギー研究所 半導体装置
JP6298662B2 (ja) 2013-03-14 2018-03-20 株式会社半導体エネルギー研究所 半導体装置
JP2014199709A (ja) 2013-03-14 2014-10-23 株式会社半導体エネルギー研究所 記憶装置、半導体装置
JP6316630B2 (ja) 2013-03-26 2018-04-25 株式会社半導体エネルギー研究所 半導体装置
JP2015084418A (ja) * 2013-09-23 2015-04-30 株式会社半導体エネルギー研究所 半導体装置
US9300292B2 (en) 2014-01-10 2016-03-29 Semiconductor Energy Laboratory Co., Ltd. Circuit including transistor
WO2015118426A2 (en) 2014-02-06 2015-08-13 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, lighting device, and electronic appliance
JP6560508B2 (ja) 2014-03-13 2019-08-14 株式会社半導体エネルギー研究所 半導体装置
US9324747B2 (en) 2014-03-13 2016-04-26 Semiconductor Energy Laboratory Co., Ltd. Imaging device
TWI656631B (zh) 2014-03-28 2019-04-11 日商半導體能源研究所股份有限公司 攝像裝置
US9379190B2 (en) 2014-05-08 2016-06-28 Flosfia, Inc. Crystalline multilayer structure and semiconductor device
JP6580863B2 (ja) 2014-05-22 2019-09-25 株式会社半導体エネルギー研究所 半導体装置、健康管理システム
TWI765679B (zh) 2014-05-30 2022-05-21 日商半導體能源研究所股份有限公司 觸控面板
JP6518133B2 (ja) 2014-05-30 2019-05-22 株式会社半導体エネルギー研究所 入力装置
US10270436B2 (en) * 2014-11-14 2019-04-23 The Hong Kong University Of Science And Technology Transistors having on-chip integrated photon source or photonic-ohmic drain to facilitate de-trapping electrons trapped in deep traps of transistors
TWI791952B (zh) 2014-12-18 2023-02-11 日商半導體能源研究所股份有限公司 半導體裝置、感測裝置和電子裝置
US10903440B2 (en) 2015-02-24 2021-01-26 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, electronic device, and lighting device
JP2017152542A (ja) 2016-02-24 2017-08-31 ユニークチップス合同会社 光駆動半導体素子
US10439514B2 (en) * 2016-03-16 2019-10-08 Panasonic Intellectual Property Management Co., Ltd. Power conversion circuit
US10237929B2 (en) * 2016-04-27 2019-03-19 Sensor Electronic Technology, Inc. Solid-state lighting source with integrated electronic modulator
US11871641B2 (en) 2018-07-27 2024-01-09 Semiconductor Energy Laboratory Co., Ltd. Display device, display module, and electronic device
WO2020075009A1 (ja) 2018-10-11 2020-04-16 株式会社半導体エネルギー研究所 センサ装置および半導体装置
US11659758B2 (en) 2019-07-05 2023-05-23 Semiconductor Energy Laboratory Co., Ltd. Display unit, display module, and electronic device
US11394014B2 (en) 2019-08-29 2022-07-19 Semiconductor Energy Laboratory Co., Ltd. Display unit, display module, and electronic device
TWI910061B (zh) 2019-09-27 2025-12-21 日商半導體能源研究所股份有限公司 顯示裝置、識別方法及程式

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130265098A1 (en) * 2012-04-06 2013-10-10 Semiconductor Energy Laboratory Co., Ltd. Solid-state relay
US20130299841A1 (en) * 2012-05-11 2013-11-14 Infineon Technologies Austria Ag GaN-Based Optocoupler
US20190027436A1 (en) 2017-07-20 2019-01-24 Avago Technologies General Ip (Singapore) Pte. Ltd. Isolation devices with faraday shields

Also Published As

Publication number Publication date
KR20210154173A (ko) 2021-12-20
JP7669267B2 (ja) 2025-04-28
JPWO2020212800A1 (https=) 2020-10-22
CN113646905A (zh) 2021-11-12
US11758745B2 (en) 2023-09-12
US20220190270A1 (en) 2022-06-16
WO2020212800A1 (ja) 2020-10-22

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