JPWO2020212800A1 - - Google Patents
Info
- Publication number
- JPWO2020212800A1 JPWO2020212800A1 JP2021514661A JP2021514661A JPWO2020212800A1 JP WO2020212800 A1 JPWO2020212800 A1 JP WO2020212800A1 JP 2021514661 A JP2021514661 A JP 2021514661A JP 2021514661 A JP2021514661 A JP 2021514661A JP WO2020212800 A1 JPWO2020212800 A1 JP WO2020212800A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
- H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
- H10F55/25—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
- H10F55/255—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices formed in, or on, a common substrate
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
- H03K17/785—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling field-effect transistor switches
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
- H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D87/00—Integrated devices comprising both bulk components and either SOI or SOS components on the same substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
- H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
- H10F55/25—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019079044 | 2019-04-18 | ||
| JP2019079044 | 2019-04-18 | ||
| PCT/IB2020/053291 WO2020212800A1 (ja) | 2019-04-18 | 2020-04-07 | 半導体リレー、および半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2020212800A1 true JPWO2020212800A1 (https=) | 2020-10-22 |
| JPWO2020212800A5 JPWO2020212800A5 (https=) | 2023-03-29 |
| JP7669267B2 JP7669267B2 (ja) | 2025-04-28 |
Family
ID=72837780
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021514661A Active JP7669267B2 (ja) | 2019-04-18 | 2020-04-07 | 半導体リレー、および半導体装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US11758745B2 (https=) |
| JP (1) | JP7669267B2 (https=) |
| KR (1) | KR102936751B1 (https=) |
| CN (1) | CN113646905A (https=) |
| WO (1) | WO2020212800A1 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20240093546A (ko) | 2021-10-27 | 2024-06-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
| CN115361008A (zh) * | 2022-08-02 | 2022-11-18 | 福建省福芯电子科技有限公司 | 光控驱动电路、固态继电器、半导体装置 |
| JP2024063929A (ja) * | 2022-10-27 | 2024-05-14 | 株式会社東芝 | 半導体装置 |
Family Cites Families (52)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS605142B2 (ja) * | 1977-05-11 | 1985-02-08 | 株式会社日立製作所 | 半導体スイツチング装置 |
| US5753928A (en) * | 1993-09-30 | 1998-05-19 | Siemens Components, Inc. | Monolithic optical emitter-detector |
| JP2000106523A (ja) | 1998-09-29 | 2000-04-11 | Matsushita Electric Works Ltd | 半導体リレー及びその製造方法 |
| TW457767B (en) | 1999-09-27 | 2001-10-01 | Matsushita Electric Works Ltd | Photo response semiconductor switch having short circuit load protection |
| JP3498694B2 (ja) * | 1999-09-27 | 2004-02-16 | 松下電工株式会社 | 光応答型半導体スイッチ |
| JP3775574B2 (ja) | 2001-05-22 | 2006-05-17 | シャープ株式会社 | 光結合装置 |
| JP2003115751A (ja) * | 2001-10-09 | 2003-04-18 | Matsushita Electric Works Ltd | 半導体スイッチ素子の駆動回路及びそれを備えた半導体リレー |
| JP4373063B2 (ja) | 2002-09-02 | 2009-11-25 | 株式会社半導体エネルギー研究所 | 電子回路装置 |
| JP3837372B2 (ja) | 2002-09-19 | 2006-10-25 | 株式会社東芝 | 半導体リレー |
| JP5759669B2 (ja) | 2008-12-01 | 2015-08-05 | 株式会社半導体エネルギー研究所 | 発光素子、発光装置、電子機器、および照明装置 |
| TWI522007B (zh) | 2008-12-01 | 2016-02-11 | 半導體能源研究所股份有限公司 | 發光元件、發光裝置、照明裝置、及電子裝置 |
| CN102450101B (zh) | 2009-05-29 | 2015-12-16 | 株式会社半导体能源研究所 | 发光元件、发光装置、电子设备以及照明装置 |
| US8389979B2 (en) | 2009-05-29 | 2013-03-05 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, light-emitting device, electronic device, and lighting device |
| JP2009302587A (ja) * | 2009-09-29 | 2009-12-24 | Toshiba Corp | 半導体発光装置 |
| JP5264865B2 (ja) | 2010-03-31 | 2013-08-14 | 富士フイルム株式会社 | 光電変換素子及び撮像素子 |
| WO2011162105A1 (en) | 2010-06-25 | 2011-12-29 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, light-emitting device, display, and electronic device |
| US9269921B2 (en) | 2010-10-20 | 2016-02-23 | Semiconductor Energy Laboratory Co., Ltd. | Lighting device |
| JP5897876B2 (ja) | 2010-11-19 | 2016-04-06 | 株式会社半導体エネルギー研究所 | 照明装置 |
| TWI575494B (zh) | 2011-08-19 | 2017-03-21 | 半導體能源研究所股份有限公司 | 半導體裝置的驅動方法 |
| WO2013099537A1 (en) | 2011-12-26 | 2013-07-04 | Semiconductor Energy Laboratory Co., Ltd. | Motion recognition device |
| US9324449B2 (en) | 2012-03-28 | 2016-04-26 | Semiconductor Energy Laboratory Co., Ltd. | Driver circuit, signal processing unit having the driver circuit, method for manufacturing the signal processing unit, and display device |
| JP2013232885A (ja) * | 2012-04-06 | 2013-11-14 | Semiconductor Energy Lab Co Ltd | 半導体リレー |
| JP6227890B2 (ja) | 2012-05-02 | 2017-11-08 | 株式会社半導体エネルギー研究所 | 信号処理回路および制御回路 |
| US20130299841A1 (en) * | 2012-05-11 | 2013-11-14 | Infineon Technologies Austria Ag | GaN-Based Optocoupler |
| US9916793B2 (en) | 2012-06-01 | 2018-03-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of driving the same |
| JP5806994B2 (ja) * | 2012-09-21 | 2015-11-10 | 株式会社東芝 | 光結合装置 |
| JP5807076B2 (ja) | 2013-01-24 | 2015-11-10 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP6298662B2 (ja) | 2013-03-14 | 2018-03-20 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP2014199709A (ja) | 2013-03-14 | 2014-10-23 | 株式会社半導体エネルギー研究所 | 記憶装置、半導体装置 |
| JP6316630B2 (ja) | 2013-03-26 | 2018-04-25 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP2015084418A (ja) * | 2013-09-23 | 2015-04-30 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US9300292B2 (en) | 2014-01-10 | 2016-03-29 | Semiconductor Energy Laboratory Co., Ltd. | Circuit including transistor |
| WO2015118426A2 (en) | 2014-02-06 | 2015-08-13 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, lighting device, and electronic appliance |
| JP6560508B2 (ja) | 2014-03-13 | 2019-08-14 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US9324747B2 (en) | 2014-03-13 | 2016-04-26 | Semiconductor Energy Laboratory Co., Ltd. | Imaging device |
| TWI656631B (zh) | 2014-03-28 | 2019-04-11 | 日商半導體能源研究所股份有限公司 | 攝像裝置 |
| US9379190B2 (en) | 2014-05-08 | 2016-06-28 | Flosfia, Inc. | Crystalline multilayer structure and semiconductor device |
| JP6580863B2 (ja) | 2014-05-22 | 2019-09-25 | 株式会社半導体エネルギー研究所 | 半導体装置、健康管理システム |
| TWI765679B (zh) | 2014-05-30 | 2022-05-21 | 日商半導體能源研究所股份有限公司 | 觸控面板 |
| JP6518133B2 (ja) | 2014-05-30 | 2019-05-22 | 株式会社半導体エネルギー研究所 | 入力装置 |
| US10270436B2 (en) * | 2014-11-14 | 2019-04-23 | The Hong Kong University Of Science And Technology | Transistors having on-chip integrated photon source or photonic-ohmic drain to facilitate de-trapping electrons trapped in deep traps of transistors |
| TWI791952B (zh) | 2014-12-18 | 2023-02-11 | 日商半導體能源研究所股份有限公司 | 半導體裝置、感測裝置和電子裝置 |
| US10903440B2 (en) | 2015-02-24 | 2021-01-26 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, light-emitting device, electronic device, and lighting device |
| JP2017152542A (ja) | 2016-02-24 | 2017-08-31 | ユニークチップス合同会社 | 光駆動半導体素子 |
| US10439514B2 (en) * | 2016-03-16 | 2019-10-08 | Panasonic Intellectual Property Management Co., Ltd. | Power conversion circuit |
| US10237929B2 (en) * | 2016-04-27 | 2019-03-19 | Sensor Electronic Technology, Inc. | Solid-state lighting source with integrated electronic modulator |
| US10276490B2 (en) | 2017-07-20 | 2019-04-30 | Avago Technologies International Sales Pte. Limited | Isolation devices with faraday shields |
| US11871641B2 (en) | 2018-07-27 | 2024-01-09 | Semiconductor Energy Laboratory Co., Ltd. | Display device, display module, and electronic device |
| WO2020075009A1 (ja) | 2018-10-11 | 2020-04-16 | 株式会社半導体エネルギー研究所 | センサ装置および半導体装置 |
| US11659758B2 (en) | 2019-07-05 | 2023-05-23 | Semiconductor Energy Laboratory Co., Ltd. | Display unit, display module, and electronic device |
| US11394014B2 (en) | 2019-08-29 | 2022-07-19 | Semiconductor Energy Laboratory Co., Ltd. | Display unit, display module, and electronic device |
| TWI910061B (zh) | 2019-09-27 | 2025-12-21 | 日商半導體能源研究所股份有限公司 | 顯示裝置、識別方法及程式 |
-
2020
- 2020-04-07 KR KR1020217035421A patent/KR102936751B1/ko active Active
- 2020-04-07 JP JP2021514661A patent/JP7669267B2/ja active Active
- 2020-04-07 US US17/600,906 patent/US11758745B2/en active Active
- 2020-04-07 WO PCT/IB2020/053291 patent/WO2020212800A1/ja not_active Ceased
- 2020-04-07 CN CN202080026016.3A patent/CN113646905A/zh active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| KR20210154173A (ko) | 2021-12-20 |
| KR102936751B1 (ko) | 2026-03-11 |
| JP7669267B2 (ja) | 2025-04-28 |
| CN113646905A (zh) | 2021-11-12 |
| US11758745B2 (en) | 2023-09-12 |
| US20220190270A1 (en) | 2022-06-16 |
| WO2020212800A1 (ja) | 2020-10-22 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230320 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20230320 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20240507 |
|
| A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20240704 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20240906 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20241224 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20250221 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20250318 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20250416 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 7669267 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |