KR102919563B1 - 플라즈마 처리 장치 및 제어 방법 - Google Patents

플라즈마 처리 장치 및 제어 방법

Info

Publication number
KR102919563B1
KR102919563B1 KR1020190176574A KR20190176574A KR102919563B1 KR 102919563 B1 KR102919563 B1 KR 102919563B1 KR 1020190176574 A KR1020190176574 A KR 1020190176574A KR 20190176574 A KR20190176574 A KR 20190176574A KR 102919563 B1 KR102919563 B1 KR 102919563B1
Authority
KR
South Korea
Prior art keywords
voltage
electrode
state
plasma
potential
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020190176574A
Other languages
English (en)
Korean (ko)
Other versions
KR20200083330A (ko
Inventor
류지 히사토미
치시오 고시미즈
미치시게 사이토
Original Assignee
도쿄엘렉트론가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 도쿄엘렉트론가부시키가이샤 filed Critical 도쿄엘렉트론가부시키가이샤
Publication of KR20200083330A publication Critical patent/KR20200083330A/ko
Application granted granted Critical
Publication of KR102919563B1 publication Critical patent/KR102919563B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/002—Cooling arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32467—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32633—Baffles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32651—Shields, e.g. dark space shields, Faraday shields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
KR1020190176574A 2018-12-28 2019-12-27 플라즈마 처리 장치 및 제어 방법 Active KR102919563B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2018-248260 2018-12-28
JP2018248260 2018-12-28
JP2019224853A JP7345382B2 (ja) 2018-12-28 2019-12-12 プラズマ処理装置及び制御方法
JPJP-P-2019-224853 2019-12-12

Publications (2)

Publication Number Publication Date
KR20200083330A KR20200083330A (ko) 2020-07-08
KR102919563B1 true KR102919563B1 (ko) 2026-01-28

Family

ID=71570125

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020190176574A Active KR102919563B1 (ko) 2018-12-28 2019-12-27 플라즈마 처리 장치 및 제어 방법

Country Status (4)

Country Link
US (2) US11201034B2 (https=)
JP (1) JP7345382B2 (https=)
KR (1) KR102919563B1 (https=)
TW (1) TWI901575B (https=)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7306886B2 (ja) * 2018-07-30 2023-07-11 東京エレクトロン株式会社 制御方法及びプラズマ処理装置
JP7345382B2 (ja) * 2018-12-28 2023-09-15 東京エレクトロン株式会社 プラズマ処理装置及び制御方法
US11361947B2 (en) * 2019-01-09 2022-06-14 Tokyo Electron Limited Apparatus for plasma processing and method of etching
JP7278896B2 (ja) * 2019-07-16 2023-05-22 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
CN117293008A (zh) 2019-08-05 2023-12-26 株式会社日立高新技术 等离子处理装置
US12249491B2 (en) 2020-08-07 2025-03-11 Semes Co., Ltd. Substrate treating apparatus and substrate support unit
KR20220105541A (ko) 2021-01-20 2022-07-27 박훈 가로형 앨범
JP7597464B2 (ja) 2021-02-10 2024-12-10 東京エレクトロン株式会社 プラズマ処理装置
JP7572126B2 (ja) 2021-04-21 2024-10-23 東京エレクトロン株式会社 プラズマ処理装置用の電極及びプラズマ処理装置
US12525433B2 (en) 2021-06-09 2026-01-13 Applied Materials, Inc. Method and apparatus to reduce feature charging in plasma processing chamber
KR102936883B1 (ko) * 2021-08-23 2026-03-11 주식회사 히타치하이테크 플라스마 처리 장치 및 플라스마 처리 방법
TW202331780A (zh) * 2021-09-15 2023-08-01 日商東京威力科創股份有限公司 電漿處理裝置及電漿處理方法
JP7607539B2 (ja) * 2021-09-24 2024-12-27 東京エレクトロン株式会社 プラズマ処理装置及び処理方法
US11898236B2 (en) * 2021-10-20 2024-02-13 Applied Materials, Inc. Methods and apparatus for processing a substrate
KR102591654B1 (ko) * 2021-10-20 2023-10-19 ( 주)아이씨디 축전 결합 플라즈마 기판 처리 장치
JP2024042803A (ja) * 2022-09-16 2024-03-29 キオクシア株式会社 プラズマ処理装置、プラズマ処理方法、および、半導体装置の製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011040461A (ja) * 2009-08-07 2011-02-24 Tokyo Electron Ltd バッフル板及びプラズマ処理装置
JP2012104382A (ja) 2010-11-10 2012-05-31 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理方法並びにプラズマ処理のバイアス電圧決定方法

Family Cites Families (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050041355A1 (en) * 1999-01-06 2005-02-24 Page J. Dennis Monitoring and response system
JP3585217B2 (ja) * 2000-07-03 2004-11-04 東京エレクトロン株式会社 基板処理装置
AUPS057102A0 (en) * 2002-02-15 2002-03-07 Vri Biomedical Ltd Compositions and methods for treatment of skin disorders
JP4753276B2 (ja) * 2002-11-26 2011-08-24 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP4482308B2 (ja) * 2002-11-26 2010-06-16 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP4584565B2 (ja) * 2002-11-26 2010-11-24 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US7215751B2 (en) * 2004-01-22 2007-05-08 International Business Machines Corporation System and method for processing caller information across heterogeneous networks
JP4523352B2 (ja) * 2004-07-20 2010-08-11 株式会社日立ハイテクノロジーズ プラズマ処理装置
US20060042754A1 (en) * 2004-07-30 2006-03-02 Tokyo Electron Limited Plasma etching apparatus
JP4642528B2 (ja) 2005-03-31 2011-03-02 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
JP5192209B2 (ja) * 2006-10-06 2013-05-08 東京エレクトロン株式会社 プラズマエッチング装置、プラズマエッチング方法およびコンピュータ読取可能な記憶媒体
US7758764B2 (en) * 2007-06-28 2010-07-20 Lam Research Corporation Methods and apparatus for substrate processing
JP5571996B2 (ja) * 2010-03-31 2014-08-13 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP5893864B2 (ja) * 2011-08-02 2016-03-23 東京エレクトロン株式会社 プラズマエッチング方法
US20130084707A1 (en) * 2011-09-30 2013-04-04 Tokyo Electron Limited Dry cleaning method for recovering etch process condition
US9922802B2 (en) * 2012-02-20 2018-03-20 Tokyo Electron Limited Power supply system, plasma etching apparatus, and plasma etching method
JP2013229373A (ja) * 2012-04-24 2013-11-07 Tokyo Electron Ltd 基板処理装置及びそのメンテナンス方法
JP6068849B2 (ja) * 2012-07-17 2017-01-25 東京エレクトロン株式会社 上部電極、及びプラズマ処理装置
JP6207880B2 (ja) * 2012-09-26 2017-10-04 東芝メモリ株式会社 プラズマ処理装置およびプラズマ処理方法
US9593421B2 (en) * 2013-11-06 2017-03-14 Applied Materials, Inc. Particle generation suppressor by DC bias modulation
JP2015095551A (ja) * 2013-11-12 2015-05-18 東京エレクトロン株式会社 シャワーヘッドアセンブリ及びプラズマ処理装置
JP6173889B2 (ja) * 2013-11-28 2017-08-02 ソニーセミコンダクタソリューションズ株式会社 シミュレーション方法、シミュレーションプログラム、加工制御システム、シミュレータ、プロセス設計方法およびマスク設計方法
JP2015115564A (ja) * 2013-12-16 2015-06-22 株式会社日立ハイテクノロジーズ プラズマ処理装置及びプラズマ処理方法
JP6169040B2 (ja) * 2014-05-12 2017-07-26 東京エレクトロン株式会社 プラズマ処理装置の上部電極構造、プラズマ処理装置、及びプラズマ処理装置の運用方法
KR101745686B1 (ko) * 2014-07-10 2017-06-12 도쿄엘렉트론가부시키가이샤 기판의 고정밀 에칭을 위한 방법
KR20160009760A (ko) * 2014-07-16 2016-01-27 피에스케이 주식회사 플라즈마 생성 장치, 플라즈마 특성 제어 방법, 및 그를 이용한 기판 처리 장치
US9779919B2 (en) * 2015-01-09 2017-10-03 Hitachi High-Technologies Corporation Plasma processing apparatus and plasma processing method
JP6449091B2 (ja) * 2015-04-20 2019-01-09 東京エレクトロン株式会社 スリップリング、支持機構及びプラズマ処理装置
JP6462477B2 (ja) * 2015-04-27 2019-01-30 東京エレクトロン株式会社 被処理体を処理する方法
CN108140550B (zh) * 2015-10-08 2022-10-14 应用材料公司 具有减少的背侧等离子体点火的喷淋头
US9779955B2 (en) * 2016-02-25 2017-10-03 Lam Research Corporation Ion beam etching utilizing cryogenic wafer temperatures
KR102513443B1 (ko) * 2016-03-15 2023-03-24 삼성전자주식회사 정전 척 및 그를 포함하는 기판 처리 장치
US20170278730A1 (en) * 2016-03-28 2017-09-28 Hitachi High-Technologies Corporation Plasma processing apparatus and plasma processing method
JP2018022830A (ja) * 2016-08-05 2018-02-08 東京エレクトロン株式会社 被処理体を処理する方法
CN108206143B (zh) * 2016-12-16 2020-09-25 中微半导体设备(上海)股份有限公司 一种等离子处理器、刻蚀均匀性调节系统及方法
KR20180134182A (ko) * 2017-06-08 2018-12-18 삼성전자주식회사 플라즈마 처리 장치
KR102435263B1 (ko) * 2017-07-25 2022-08-23 삼성전자주식회사 플라즈마 처리 장치 및 방법, 및 이를 이용한 반도체 장치의 제조 방법
US10763083B2 (en) * 2017-10-06 2020-09-01 Lam Research Corporation High energy atomic layer etching
JP7073098B2 (ja) * 2017-12-27 2022-05-23 株式会社日立ハイテク ウエハ処理方法およびウエハ処理装置
US10672589B2 (en) * 2018-10-10 2020-06-02 Tokyo Electron Limited Plasma processing apparatus and control method
JP7345382B2 (ja) * 2018-12-28 2023-09-15 東京エレクトロン株式会社 プラズマ処理装置及び制御方法
JP2020170749A (ja) * 2019-04-01 2020-10-15 東京エレクトロン株式会社 基板処理装置および基板処理方法
JP7467062B2 (ja) * 2019-10-15 2024-04-15 東京エレクトロン株式会社 シリコン部材の製造方法及び造形装置
JP7401284B2 (ja) * 2019-12-12 2023-12-19 東京エレクトロン株式会社 基板処理装置
US11462389B2 (en) * 2020-07-31 2022-10-04 Applied Materials, Inc. Pulsed-voltage hardware assembly for use in a plasma processing system
US20220084800A1 (en) * 2020-09-14 2022-03-17 Tokyo Electron Limited Stage, substrate processing apparatus and substrate attraction method
US11776835B2 (en) * 2020-09-29 2023-10-03 Applied Materials, Inc. Power supply signal conditioning for an electrostatic chuck
US11476090B1 (en) * 2021-08-24 2022-10-18 Applied Materials, Inc. Voltage pulse time-domain multiplexing

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011040461A (ja) * 2009-08-07 2011-02-24 Tokyo Electron Ltd バッフル板及びプラズマ処理装置
JP2012104382A (ja) 2010-11-10 2012-05-31 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理方法並びにプラズマ処理のバイアス電圧決定方法

Also Published As

Publication number Publication date
US11201034B2 (en) 2021-12-14
US20200211823A1 (en) 2020-07-02
US20220076921A1 (en) 2022-03-10
JP2020109838A (ja) 2020-07-16
TWI901575B (zh) 2025-10-21
JP7345382B2 (ja) 2023-09-15
KR20200083330A (ko) 2020-07-08
US11742183B2 (en) 2023-08-29
TW202040682A (zh) 2020-11-01

Similar Documents

Publication Publication Date Title
KR102919563B1 (ko) 플라즈마 처리 장치 및 제어 방법
JP7155354B2 (ja) プラズマ処理装置、プロセッサ、制御方法、非一時的コンピュータ可読記録媒体及びプログラム
KR102841325B1 (ko) 제어 방법 및 플라즈마 처리 장치
KR102919560B1 (ko) 플라즈마 처리 장치 및 제어 방법
WO2020026802A1 (ja) 制御方法及びプラズマ処理装置
CN111383898B (zh) 等离子体处理装置和控制方法

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

D22 Grant of ip right intended

Free format text: ST27 STATUS EVENT CODE: A-1-2-D10-D22-EXM-PE0701 (AS PROVIDED BY THE NATIONAL OFFICE)

PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

F11 Ip right granted following substantive examination

Free format text: ST27 STATUS EVENT CODE: A-2-4-F10-F11-EXM-PR0701 (AS PROVIDED BY THE NATIONAL OFFICE)

PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

U11 Full renewal or maintenance fee paid

Free format text: ST27 STATUS EVENT CODE: A-2-2-U10-U11-OTH-PR1002 (AS PROVIDED BY THE NATIONAL OFFICE)

Year of fee payment: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

Q13 Ip right document published

Free format text: ST27 STATUS EVENT CODE: A-4-4-Q10-Q13-NAP-PG1601 (AS PROVIDED BY THE NATIONAL OFFICE)