TWI901575B - 電漿處理裝置及控制方法 - Google Patents

電漿處理裝置及控制方法

Info

Publication number
TWI901575B
TWI901575B TW108146314A TW108146314A TWI901575B TW I901575 B TWI901575 B TW I901575B TW 108146314 A TW108146314 A TW 108146314A TW 108146314 A TW108146314 A TW 108146314A TW I901575 B TWI901575 B TW I901575B
Authority
TW
Taiwan
Prior art keywords
voltage
plasma
power supply
state
electrode
Prior art date
Application number
TW108146314A
Other languages
English (en)
Chinese (zh)
Other versions
TW202040682A (zh
Inventor
久冨竜晃
輿水地塩
斎藤道茂
Original Assignee
日商東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商東京威力科創股份有限公司 filed Critical 日商東京威力科創股份有限公司
Publication of TW202040682A publication Critical patent/TW202040682A/zh
Application granted granted Critical
Publication of TWI901575B publication Critical patent/TWI901575B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/002—Cooling arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32467—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32633—Baffles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32651—Shields, e.g. dark space shields, Faraday shields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
TW108146314A 2018-12-28 2019-12-18 電漿處理裝置及控制方法 TWI901575B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2018248260 2018-12-28
JP2018-248260 2018-12-28
JP2019224853A JP7345382B2 (ja) 2018-12-28 2019-12-12 プラズマ処理装置及び制御方法
JP2019-224853 2019-12-12

Publications (2)

Publication Number Publication Date
TW202040682A TW202040682A (zh) 2020-11-01
TWI901575B true TWI901575B (zh) 2025-10-21

Family

ID=71570125

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108146314A TWI901575B (zh) 2018-12-28 2019-12-18 電漿處理裝置及控制方法

Country Status (4)

Country Link
US (2) US11201034B2 (https=)
JP (1) JP7345382B2 (https=)
KR (1) KR102919563B1 (https=)
TW (1) TWI901575B (https=)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7306886B2 (ja) * 2018-07-30 2023-07-11 東京エレクトロン株式会社 制御方法及びプラズマ処理装置
JP7345382B2 (ja) * 2018-12-28 2023-09-15 東京エレクトロン株式会社 プラズマ処理装置及び制御方法
US11361947B2 (en) * 2019-01-09 2022-06-14 Tokyo Electron Limited Apparatus for plasma processing and method of etching
JP7278896B2 (ja) * 2019-07-16 2023-05-22 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
CN117293008A (zh) 2019-08-05 2023-12-26 株式会社日立高新技术 等离子处理装置
US12249491B2 (en) 2020-08-07 2025-03-11 Semes Co., Ltd. Substrate treating apparatus and substrate support unit
KR20220105541A (ko) 2021-01-20 2022-07-27 박훈 가로형 앨범
JP7597464B2 (ja) 2021-02-10 2024-12-10 東京エレクトロン株式会社 プラズマ処理装置
JP7572126B2 (ja) 2021-04-21 2024-10-23 東京エレクトロン株式会社 プラズマ処理装置用の電極及びプラズマ処理装置
US12525433B2 (en) 2021-06-09 2026-01-13 Applied Materials, Inc. Method and apparatus to reduce feature charging in plasma processing chamber
KR102936883B1 (ko) * 2021-08-23 2026-03-11 주식회사 히타치하이테크 플라스마 처리 장치 및 플라스마 처리 방법
TW202331780A (zh) * 2021-09-15 2023-08-01 日商東京威力科創股份有限公司 電漿處理裝置及電漿處理方法
JP7607539B2 (ja) * 2021-09-24 2024-12-27 東京エレクトロン株式会社 プラズマ処理装置及び処理方法
US11898236B2 (en) * 2021-10-20 2024-02-13 Applied Materials, Inc. Methods and apparatus for processing a substrate
KR102591654B1 (ko) * 2021-10-20 2023-10-19 ( 주)아이씨디 축전 결합 플라즈마 기판 처리 장치
JP2024042803A (ja) * 2022-09-16 2024-03-29 キオクシア株式会社 プラズマ処理装置、プラズマ処理方法、および、半導体装置の製造方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110011535A1 (en) * 2007-06-28 2011-01-20 Rajinder Dhindsa Methods and arrangements for controlling plasma processing parameters
JP2011040461A (ja) * 2009-08-07 2011-02-24 Tokyo Electron Ltd バッフル板及びプラズマ処理装置
TW201207932A (en) * 2010-03-31 2012-02-16 Tokyo Electron Ltd Plasma processing method and plasma processing apparatus
TW201324610A (zh) * 2011-08-02 2013-06-16 東京威力科創股份有限公司 電漿蝕刻方法
US20150000842A1 (en) * 2012-02-20 2015-01-01 Tokyo Electron Limited Power supply system, plasma etching apparatus, and plasma etching method
US20170101713A1 (en) * 2015-10-08 2017-04-13 Applied Materials, Inc. Showerhead with reduced backside plasma ignition
TW201838061A (zh) * 2016-12-16 2018-10-16 大陸商中微半導體設備（上海）股份有限公司 一種等離子處理器及刻蝕均勻性調節系統及方法

Family Cites Families (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050041355A1 (en) * 1999-01-06 2005-02-24 Page J. Dennis Monitoring and response system
JP3585217B2 (ja) * 2000-07-03 2004-11-04 東京エレクトロン株式会社 基板処理装置
AUPS057102A0 (en) * 2002-02-15 2002-03-07 Vri Biomedical Ltd Compositions and methods for treatment of skin disorders
JP4753276B2 (ja) * 2002-11-26 2011-08-24 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP4482308B2 (ja) * 2002-11-26 2010-06-16 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP4584565B2 (ja) * 2002-11-26 2010-11-24 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US7215751B2 (en) * 2004-01-22 2007-05-08 International Business Machines Corporation System and method for processing caller information across heterogeneous networks
JP4523352B2 (ja) * 2004-07-20 2010-08-11 株式会社日立ハイテクノロジーズ プラズマ処理装置
US20060042754A1 (en) * 2004-07-30 2006-03-02 Tokyo Electron Limited Plasma etching apparatus
JP4642528B2 (ja) 2005-03-31 2011-03-02 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
JP5192209B2 (ja) * 2006-10-06 2013-05-08 東京エレクトロン株式会社 プラズマエッチング装置、プラズマエッチング方法およびコンピュータ読取可能な記憶媒体
JP2012104382A (ja) * 2010-11-10 2012-05-31 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理方法並びにプラズマ処理のバイアス電圧決定方法
US20130084707A1 (en) * 2011-09-30 2013-04-04 Tokyo Electron Limited Dry cleaning method for recovering etch process condition
JP2013229373A (ja) * 2012-04-24 2013-11-07 Tokyo Electron Ltd 基板処理装置及びそのメンテナンス方法
JP6068849B2 (ja) * 2012-07-17 2017-01-25 東京エレクトロン株式会社 上部電極、及びプラズマ処理装置
JP6207880B2 (ja) * 2012-09-26 2017-10-04 東芝メモリ株式会社 プラズマ処理装置およびプラズマ処理方法
US9593421B2 (en) * 2013-11-06 2017-03-14 Applied Materials, Inc. Particle generation suppressor by DC bias modulation
JP2015095551A (ja) * 2013-11-12 2015-05-18 東京エレクトロン株式会社 シャワーヘッドアセンブリ及びプラズマ処理装置
JP6173889B2 (ja) * 2013-11-28 2017-08-02 ソニーセミコンダクタソリューションズ株式会社 シミュレーション方法、シミュレーションプログラム、加工制御システム、シミュレータ、プロセス設計方法およびマスク設計方法
JP2015115564A (ja) * 2013-12-16 2015-06-22 株式会社日立ハイテクノロジーズ プラズマ処理装置及びプラズマ処理方法
JP6169040B2 (ja) * 2014-05-12 2017-07-26 東京エレクトロン株式会社 プラズマ処理装置の上部電極構造、プラズマ処理装置、及びプラズマ処理装置の運用方法
KR101745686B1 (ko) * 2014-07-10 2017-06-12 도쿄엘렉트론가부시키가이샤 기판의 고정밀 에칭을 위한 방법
KR20160009760A (ko) * 2014-07-16 2016-01-27 피에스케이 주식회사 플라즈마 생성 장치, 플라즈마 특성 제어 방법, 및 그를 이용한 기판 처리 장치
US9779919B2 (en) * 2015-01-09 2017-10-03 Hitachi High-Technologies Corporation Plasma processing apparatus and plasma processing method
JP6449091B2 (ja) * 2015-04-20 2019-01-09 東京エレクトロン株式会社 スリップリング、支持機構及びプラズマ処理装置
JP6462477B2 (ja) * 2015-04-27 2019-01-30 東京エレクトロン株式会社 被処理体を処理する方法
US9779955B2 (en) * 2016-02-25 2017-10-03 Lam Research Corporation Ion beam etching utilizing cryogenic wafer temperatures
KR102513443B1 (ko) * 2016-03-15 2023-03-24 삼성전자주식회사 정전 척 및 그를 포함하는 기판 처리 장치
US20170278730A1 (en) * 2016-03-28 2017-09-28 Hitachi High-Technologies Corporation Plasma processing apparatus and plasma processing method
JP2018022830A (ja) * 2016-08-05 2018-02-08 東京エレクトロン株式会社 被処理体を処理する方法
KR20180134182A (ko) * 2017-06-08 2018-12-18 삼성전자주식회사 플라즈마 처리 장치
KR102435263B1 (ko) * 2017-07-25 2022-08-23 삼성전자주식회사 플라즈마 처리 장치 및 방법, 및 이를 이용한 반도체 장치의 제조 방법
US10763083B2 (en) * 2017-10-06 2020-09-01 Lam Research Corporation High energy atomic layer etching
JP7073098B2 (ja) * 2017-12-27 2022-05-23 株式会社日立ハイテク ウエハ処理方法およびウエハ処理装置
US10672589B2 (en) * 2018-10-10 2020-06-02 Tokyo Electron Limited Plasma processing apparatus and control method
JP7345382B2 (ja) * 2018-12-28 2023-09-15 東京エレクトロン株式会社 プラズマ処理装置及び制御方法
JP2020170749A (ja) * 2019-04-01 2020-10-15 東京エレクトロン株式会社 基板処理装置および基板処理方法
JP7467062B2 (ja) * 2019-10-15 2024-04-15 東京エレクトロン株式会社 シリコン部材の製造方法及び造形装置
JP7401284B2 (ja) * 2019-12-12 2023-12-19 東京エレクトロン株式会社 基板処理装置
US11462389B2 (en) * 2020-07-31 2022-10-04 Applied Materials, Inc. Pulsed-voltage hardware assembly for use in a plasma processing system
US20220084800A1 (en) * 2020-09-14 2022-03-17 Tokyo Electron Limited Stage, substrate processing apparatus and substrate attraction method
US11776835B2 (en) * 2020-09-29 2023-10-03 Applied Materials, Inc. Power supply signal conditioning for an electrostatic chuck
US11476090B1 (en) * 2021-08-24 2022-10-18 Applied Materials, Inc. Voltage pulse time-domain multiplexing

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110011535A1 (en) * 2007-06-28 2011-01-20 Rajinder Dhindsa Methods and arrangements for controlling plasma processing parameters
JP2011040461A (ja) * 2009-08-07 2011-02-24 Tokyo Electron Ltd バッフル板及びプラズマ処理装置
TW201207932A (en) * 2010-03-31 2012-02-16 Tokyo Electron Ltd Plasma processing method and plasma processing apparatus
TW201324610A (zh) * 2011-08-02 2013-06-16 東京威力科創股份有限公司 電漿蝕刻方法
US20150000842A1 (en) * 2012-02-20 2015-01-01 Tokyo Electron Limited Power supply system, plasma etching apparatus, and plasma etching method
US20170101713A1 (en) * 2015-10-08 2017-04-13 Applied Materials, Inc. Showerhead with reduced backside plasma ignition
TW201838061A (zh) * 2016-12-16 2018-10-16 大陸商中微半導體設備（上海）股份有限公司 一種等離子處理器及刻蝕均勻性調節系統及方法

Also Published As

Publication number Publication date
US11201034B2 (en) 2021-12-14
US20200211823A1 (en) 2020-07-02
KR102919563B1 (ko) 2026-01-28
US20220076921A1 (en) 2022-03-10
JP2020109838A (ja) 2020-07-16
JP7345382B2 (ja) 2023-09-15
KR20200083330A (ko) 2020-07-08
US11742183B2 (en) 2023-08-29
TW202040682A (zh) 2020-11-01

Similar Documents

Publication Publication Date Title
TWI901575B (zh) 電漿處理裝置及控制方法
CN111819664B (zh) 控制方法和等离子体处理装置
JP7455174B2 (ja) Ｒｆ発生器及び方法
CN111029238B (zh) 等离子体处理装置和控制方法
CN114999881B (zh) 等离子体处理装置和控制方法
WO2020026802A1 (ja) 制御方法及びプラズマ処理装置
TWI874512B (zh) 電漿處理裝置及電漿處理方法
TWI891654B (zh) 電漿處理裝置及處理方法
CN111383898B (zh) 等离子体处理装置和控制方法
TWI917181B (zh) 電漿處理裝置、電漿處理方法及電腦可讀取之記憶媒體