KR102906921B1 - 중합성 화합물, 활성 에너지선 경화성 수지 조성물, 경화물, 레지스트용 조성물, 및 레지스트막 - Google Patents

중합성 화합물, 활성 에너지선 경화성 수지 조성물, 경화물, 레지스트용 조성물, 및 레지스트막

Info

Publication number
KR102906921B1
KR102906921B1 KR1020237009036A KR20237009036A KR102906921B1 KR 102906921 B1 KR102906921 B1 KR 102906921B1 KR 1020237009036 A KR1020237009036 A KR 1020237009036A KR 20237009036 A KR20237009036 A KR 20237009036A KR 102906921 B1 KR102906921 B1 KR 102906921B1
Authority
KR
South Korea
Prior art keywords
compound
group
polymerizable compound
polymerizable
meth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020237009036A
Other languages
English (en)
Korean (ko)
Other versions
KR20230051687A (ko
Inventor
도모유키 이마다
노리오 나가에
Original Assignee
디아이씨 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 디아이씨 가부시끼가이샤 filed Critical 디아이씨 가부시끼가이샤
Publication of KR20230051687A publication Critical patent/KR20230051687A/ko
Application granted granted Critical
Publication of KR102906921B1 publication Critical patent/KR102906921B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F12/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F12/34—Monomers containing two or more unsaturated aliphatic radicals
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F299/00—Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers
    • C08F299/02—Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers from unsaturated polycondensates
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/14—Polycondensates modified by chemical after-treatment
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/025—Non-macromolecular photopolymerisable compounds having carbon-to-carbon triple bonds, e.g. acetylenic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Structural Engineering (AREA)
  • Architecture (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Epoxy Resins (AREA)
  • Macromonomer-Based Addition Polymer (AREA)
  • Materials For Photolithography (AREA)
KR1020237009036A 2020-12-15 2021-11-25 중합성 화합물, 활성 에너지선 경화성 수지 조성물, 경화물, 레지스트용 조성물, 및 레지스트막 Active KR102906921B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2020-207389 2020-12-15
JP2020207389 2020-12-15
PCT/JP2021/043093 WO2022130921A1 (ja) 2020-12-15 2021-11-25 重合性化合物、活性エネルギー線硬化性樹脂組成物、硬化物、レジスト用組成物、及びレジスト膜

Publications (2)

Publication Number Publication Date
KR20230051687A KR20230051687A (ko) 2023-04-18
KR102906921B1 true KR102906921B1 (ko) 2026-01-05

Family

ID=82058785

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020237009036A Active KR102906921B1 (ko) 2020-12-15 2021-11-25 중합성 화합물, 활성 에너지선 경화성 수지 조성물, 경화물, 레지스트용 조성물, 및 레지스트막

Country Status (5)

Country Link
JP (1) JP7288233B2 (https=)
KR (1) KR102906921B1 (https=)
CN (1) CN116670184B (https=)
TW (1) TWI884320B (https=)
WO (1) WO2022130921A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021181958A1 (ja) * 2020-03-10 2021-09-16 Dic株式会社 （メタ）アクリレート樹脂、活性エネルギー線硬化性（メタ）アクリレート樹脂組成物、及びレジスト下層膜、並びに（メタ）アクリレート樹脂の製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000007758A (ja) 1998-06-27 2000-01-11 Nagase Chiba Kk Ｂ−ステージ化できる液状エポキシ樹脂組成物
JP2020117612A (ja) 2019-01-23 2020-08-06 Dic株式会社 エポキシ（メタ）アクリレート樹脂、硬化性樹脂組成物、硬化物及び物品

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3309339A (en) * 1963-11-12 1967-03-14 Allied Chem New trisphenols and epoxide resins prepared therefrom
AU2003221053A1 (en) * 2002-03-29 2003-10-27 Taiyo Ink Manufacturing Co., Ltd. Unsaturated polybranched compounds, curable compositions containing the same and cured articles thereof
JP4714135B2 (ja) * 2002-03-29 2011-06-29 太陽ホールディングス株式会社 不飽和基含有多分岐化合物、それを含有する硬化性組成物及びその硬化物
JP2010285403A (ja) 2009-06-15 2010-12-24 Nissan Chem Ind Ltd 架橋剤及び該架橋剤を含有するレジスト下層膜形成組成物
CN103694430B (zh) 2014-01-02 2016-02-10 河北大学 聚不饱和酸没食子酸环氧酯医用高分子材料制备方法
JP6402968B2 (ja) * 2014-03-03 2018-10-10 Dic株式会社 （メタ）アクリロイル基含有樹脂、（メタ）アクリロイル基含有樹脂の製造方法、硬化性樹脂材料、その硬化物、及びレジスト材料
JP6575838B2 (ja) * 2017-07-14 2019-09-18 Dic株式会社 エポキシ樹脂、およびこれを含むエポキシ樹脂組成物、並びに前記エポキシ樹脂組成物を用いた硬化物
KR102425937B1 (ko) * 2017-07-21 2022-07-28 디아이씨 가부시끼가이샤 에폭시 수지, 및 이것을 포함하는 에폭시 수지 조성물, 그리고 상기 에폭시 수지 조성물을 사용한 경화물
WO2020137309A1 (ja) * 2018-12-26 2020-07-02 Dic株式会社 レジスト組成物
JP7192521B2 (ja) * 2019-01-23 2022-12-20 Dic株式会社 酸基含有（メタ）アクリレート樹脂、硬化性樹脂組成物、硬化物、絶縁材料、ソルダーレジスト用樹脂材料及びレジスト部材
JP7375347B2 (ja) * 2019-06-28 2023-11-08 Dic株式会社 エポキシ化合物、組成物、硬化物及び積層体
WO2021181958A1 (ja) * 2020-03-10 2021-09-16 Dic株式会社 （メタ）アクリレート樹脂、活性エネルギー線硬化性（メタ）アクリレート樹脂組成物、及びレジスト下層膜、並びに（メタ）アクリレート樹脂の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000007758A (ja) 1998-06-27 2000-01-11 Nagase Chiba Kk Ｂ−ステージ化できる液状エポキシ樹脂組成物
JP2020117612A (ja) 2019-01-23 2020-08-06 Dic株式会社 エポキシ（メタ）アクリレート樹脂、硬化性樹脂組成物、硬化物及び物品

Also Published As

Publication number Publication date
CN116670184B (zh) 2025-12-09
TW202231614A (zh) 2022-08-16
CN116670184A (zh) 2023-08-29
WO2022130921A1 (ja) 2022-06-23
KR20230051687A (ko) 2023-04-18
JPWO2022130921A1 (https=) 2022-06-23
JP7288233B2 (ja) 2023-06-07
TWI884320B (zh) 2025-05-21

Similar Documents

Publication Publication Date Title
JP7283515B2 (ja) 化合物、樹脂、組成物並びにレジストパターン形成方法及び回路パターン形成方法
JP7194355B2 (ja) 化合物、樹脂、組成物及びパターン形成方法
JP7069529B2 (ja) 化合物、樹脂、組成物並びにレジストパターン形成方法及び回路パターン形成方法
JP7194356B2 (ja) 化合物、樹脂及び組成物、並びにレジストパターン形成方法及び回路パターン形成方法
CN112162462A (zh) 触摸屏用感光性树脂组合物及其硬化膜、以及具有该硬化膜的触摸屏
JP7069530B2 (ja) 化合物、樹脂、組成物及びパターン形成方法
TWI883152B (zh) 感光性樹脂組成物、硬化膜、基板、基板的製造方法及顯示裝置
JPWO2019098338A1 (ja) リソグラフィー用膜形成用組成物、リソグラフィー用膜、レジストパターン形成方法、及び回路パターン形成方法
KR20210093903A (ko) 리소그래피용 막형성재료, 리소그래피용 막형성용 조성물, 리소그래피용 하층막 및 패턴형성방법
JP7452947B2 (ja) 化合物、樹脂、組成物、並びにレジストパターン形成方法及び回路パターン形成方法
KR102915144B1 (ko) (메타)아크릴레이트 수지, 활성 에너지선 경화성 (메타)아크릴레이트 수지 조성물, 및 레지스트 하층막, 그리고 (메타)아크릴레이트 수지의 제조 방법
JP2012013906A (ja) 感光性樹脂組成物
KR102906921B1 (ko) 중합성 화합물, 활성 에너지선 경화성 수지 조성물, 경화물, 레지스트용 조성물, 및 레지스트막
JP5520440B2 (ja) 有機反射防止膜形成用単量体、重合体及びこれを含む有機組成物
JP7205716B2 (ja) 化合物、樹脂、組成物並びにレジストパターン形成方法及び回路パターン形成方法
JP7205715B2 (ja) 化合物、樹脂、組成物並びにレジストパターン形成方法及び回路パターン形成方法
JP7331853B2 (ja) 下層膜形成組成物
JP2012014931A (ja) 感光性樹脂組成物
JP2020166255A (ja) 硬化膜付き基板の製造方法、硬化膜付き基板、感光性樹脂組成物、感光性樹脂組成物を硬化してなる硬化膜および硬化膜または硬化膜付き基板を有する表示装置
KR20170113287A (ko) 층간 절연막 형성용 조성물, 층간 절연막 및 층간 절연막 패턴의 형성 방법, 그리고 디바이스
KR102924439B1 (ko) 네거티브형 감광성 수지 조성물, 패턴 구조, 및 패턴 경화막의 제조 방법
JP7445382B2 (ja) 化合物、樹脂、組成物及びパターン形成方法
WO2012176718A1 (ja) ポジ型レジスト組成物
WO2021085262A1 (ja) ケイ素化合物、反応性材料、樹脂組成物、感光性樹脂組成物、硬化膜、硬化膜の製造方法、パターン硬化膜およびパターン硬化膜の製造方法

Legal Events

Date Code Title Description
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

D22 Grant of ip right intended

Free format text: ST27 STATUS EVENT CODE: A-1-2-D10-D22-EXM-PE0701 (AS PROVIDED BY THE NATIONAL OFFICE)

PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

F11 Ip right granted following substantive examination

Free format text: ST27 STATUS EVENT CODE: A-2-4-F10-F11-EXM-PR0701 (AS PROVIDED BY THE NATIONAL OFFICE)

PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

U12 Designation fee paid

Free format text: ST27 STATUS EVENT CODE: A-2-2-U10-U12-OTH-PR1002 (AS PROVIDED BY THE NATIONAL OFFICE)

Year of fee payment: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

Q13 Ip right document published

Free format text: ST27 STATUS EVENT CODE: A-4-4-Q10-Q13-NAP-PG1601 (AS PROVIDED BY THE NATIONAL OFFICE)