KR102828652B1 - 촬상 장치 및 전자 기기 - Google Patents

촬상 장치 및 전자 기기 Download PDF

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Publication number
KR102828652B1
KR102828652B1 KR1020247019601A KR20247019601A KR102828652B1 KR 102828652 B1 KR102828652 B1 KR 102828652B1 KR 1020247019601 A KR1020247019601 A KR 1020247019601A KR 20247019601 A KR20247019601 A KR 20247019601A KR 102828652 B1 KR102828652 B1 KR 102828652B1
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South Korea
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transistor
imaging device
group
solid
state imaging
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Korean (ko)
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KR20240096885A (ko
Inventor
나나코 카토
토시후미 와카노
유스케 오타케
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소니그룹주식회사
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/618—Noise processing, e.g. detecting, correcting, reducing or removing noise for random or high-frequency noise
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
KR1020247019601A 2014-02-28 2015-02-20 촬상 장치 및 전자 기기 Active KR102828652B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2014038584A JP6334203B2 (ja) 2014-02-28 2014-02-28 固体撮像装置、および電子機器
JPJP-P-2014-038584 2014-02-28
PCT/JP2015/000821 WO2015129226A1 (en) 2014-02-28 2015-02-20 Imaging device and electronic apparatus
KR1020237002324A KR102675995B1 (ko) 2014-02-28 2015-02-20 촬상 장치 및 전자 기기

Related Parent Applications (1)

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KR1020237002324A Division KR102675995B1 (ko) 2014-02-28 2015-02-20 촬상 장치 및 전자 기기

Publications (2)

Publication Number Publication Date
KR20240096885A KR20240096885A (ko) 2024-06-26
KR102828652B1 true KR102828652B1 (ko) 2025-07-04

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KR1020247019601A Active KR102828652B1 (ko) 2014-02-28 2015-02-20 촬상 장치 및 전자 기기
KR1020167022090A Active KR102386941B1 (ko) 2014-02-28 2015-02-20 촬상 장치 및 전자 기기
KR1020237002324A Active KR102675995B1 (ko) 2014-02-28 2015-02-20 촬상 장치 및 전자 기기
KR1020227007266A Active KR102492853B1 (ko) 2014-02-28 2015-02-20 촬상 장치 및 전자 기기

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KR1020167022090A Active KR102386941B1 (ko) 2014-02-28 2015-02-20 촬상 장치 및 전자 기기
KR1020237002324A Active KR102675995B1 (ko) 2014-02-28 2015-02-20 촬상 장치 및 전자 기기
KR1020227007266A Active KR102492853B1 (ko) 2014-02-28 2015-02-20 촬상 장치 및 전자 기기

Country Status (7)

Country Link
US (4) US10075659B2 (https=)
EP (2) EP3111631B1 (https=)
JP (1) JP6334203B2 (https=)
KR (4) KR102828652B1 (https=)
CN (2) CN111312736B (https=)
TW (1) TWI653891B (https=)
WO (1) WO2015129226A1 (https=)

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Also Published As

Publication number Publication date
US20230247317A1 (en) 2023-08-03
KR102492853B1 (ko) 2023-01-31
EP3518518A1 (en) 2019-07-31
US20200366856A1 (en) 2020-11-19
KR102675995B1 (ko) 2024-06-18
US20170013211A1 (en) 2017-01-12
JP2015162646A (ja) 2015-09-07
CN106030804A (zh) 2016-10-12
KR20240096885A (ko) 2024-06-26
CN111312736A (zh) 2020-06-19
KR102386941B1 (ko) 2022-04-15
US20190007631A1 (en) 2019-01-03
EP3111631B1 (en) 2019-04-03
EP3111631A1 (en) 2017-01-04
US10075659B2 (en) 2018-09-11
KR20160127730A (ko) 2016-11-04
KR20220034926A (ko) 2022-03-18
CN111312736B (zh) 2023-10-24
TW201534121A (zh) 2015-09-01
TWI653891B (zh) 2019-03-11
US11044428B2 (en) 2021-06-22
WO2015129226A1 (en) 2015-09-03
EP3518518B1 (en) 2020-08-12
CN106030804B (zh) 2020-03-20
US12096142B2 (en) 2024-09-17
KR20230019213A (ko) 2023-02-07
US11683601B2 (en) 2023-06-20
JP6334203B2 (ja) 2018-05-30

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