KR102806621B1 - 기판 건조 장치 및 기판 처리 장치 - Google Patents

기판 건조 장치 및 기판 처리 장치 Download PDF

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Publication number
KR102806621B1
KR102806621B1 KR1020220037826A KR20220037826A KR102806621B1 KR 102806621 B1 KR102806621 B1 KR 102806621B1 KR 1020220037826 A KR1020220037826 A KR 1020220037826A KR 20220037826 A KR20220037826 A KR 20220037826A KR 102806621 B1 KR102806621 B1 KR 102806621B1
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South Korea
Prior art keywords
substrate
drying
liquid
unit
heating
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KR20220136194A (ko
Inventor
요코 다루노
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시바우라 메카트로닉스 가부시끼가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0408—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H01L21/67034—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B13/00—Accessories or details of general applicability for machines or apparatus for cleaning
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • H01L21/67051—
    • H01L21/6708—
    • H01L21/67115—
    • H01L21/67253—
    • H01L21/68742—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H10P72/0424—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7612—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by lifting arrangements, e.g. lift pins

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Solid Materials (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
KR1020220037826A 2021-03-31 2022-03-28 기판 건조 장치 및 기판 처리 장치 Active KR102806621B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2021-059075 2021-03-31
JP2021059075A JP7726653B2 (ja) 2021-03-31 2021-03-31 基板乾燥装置及び基板処理装置

Publications (2)

Publication Number Publication Date
KR20220136194A KR20220136194A (ko) 2022-10-07
KR102806621B1 true KR102806621B1 (ko) 2025-05-13

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KR1020220037826A Active KR102806621B1 (ko) 2021-03-31 2022-03-28 기판 건조 장치 및 기판 처리 장치

Country Status (5)

Country Link
US (1) US20220319875A1 (https=)
JP (2) JP7726653B2 (https=)
KR (1) KR102806621B1 (https=)
CN (1) CN115148627B (https=)
TW (1) TWI814298B (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7625458B2 (ja) * 2021-03-22 2025-02-03 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
CN116153801A (zh) * 2022-12-31 2023-05-23 华海清科股份有限公司 一种光学测量装置和减薄设备

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017069354A (ja) * 2015-09-29 2017-04-06 芝浦メカトロニクス株式会社 基板処理装置及び基板処理方法

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US6127279A (en) * 1994-09-26 2000-10-03 Semiconductor Energy Laboratory Co., Ltd. Solution applying method
JP3976084B2 (ja) * 1998-07-03 2007-09-12 大日本スクリーン製造株式会社 基板処理方法及び基板処理装置
KR100992803B1 (ko) 2002-07-25 2010-11-09 도쿄엘렉트론가부시키가이샤 기판 처리 용기
JP4698407B2 (ja) * 2005-12-20 2011-06-08 大日本スクリーン製造株式会社 基板処理装置および基板処理方法
JP2008034779A (ja) 2006-06-27 2008-02-14 Dainippon Screen Mfg Co Ltd 基板処理方法および基板処理装置
JP5043406B2 (ja) 2006-11-21 2012-10-10 大日本スクリーン製造株式会社 基板乾燥方法および基板乾燥装置
JP5820709B2 (ja) 2011-11-30 2015-11-24 東京エレクトロン株式会社 基板処理方法、この基板処理方法を実行するためのコンピュータプログラムが記録された記録媒体、および基板処理装置
US9075266B2 (en) 2012-04-19 2015-07-07 Shenzhen China Star Optoelectronics Technology Co., Ltd. Device for prebaking alignment film by using temperature-controllable pin to support substrate and method thereof
TWI826650B (zh) * 2012-11-26 2023-12-21 美商應用材料股份有限公司 用於高深寬比半導體元件結構具有污染物去除之無黏附乾燥處理
JP6400919B2 (ja) * 2013-03-07 2018-10-03 芝浦メカトロニクス株式会社 基板処理装置及び基板処理方法
JP6455962B2 (ja) * 2013-03-18 2019-01-23 芝浦メカトロニクス株式会社 基板処理装置及び基板処理方法
JP6351993B2 (ja) * 2013-03-18 2018-07-04 芝浦メカトロニクス株式会社 基板処理装置及び基板処理方法
JP6426927B2 (ja) * 2013-09-30 2018-11-21 芝浦メカトロニクス株式会社 基板処理装置及び基板処理方法
JP6503194B2 (ja) 2015-02-16 2019-04-17 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP6742708B2 (ja) 2015-09-29 2020-08-19 芝浦メカトロニクス株式会社 基板処理方法
JP6670674B2 (ja) * 2016-05-18 2020-03-25 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP6737666B2 (ja) * 2016-09-12 2020-08-12 株式会社Ｓｃｒｅｅｎホールディングス 犠牲膜形成方法、基板処理方法および基板処理装置
JP6825956B2 (ja) * 2017-03-28 2021-02-03 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置、基板処理方法および紫外線照射手段の選択方法
CN111630636B (zh) 2018-01-29 2024-03-22 东京毅力科创株式会社 基片干燥装置、基片干燥方法和存储介质
JP7100564B2 (ja) * 2018-11-09 2022-07-13 株式会社Ｓｃｒｅｅｎホールディングス 基板乾燥方法および基板処理装置
KR102433558B1 (ko) * 2019-07-11 2022-08-19 세메스 주식회사 기판 처리 장치 및 기판 처리 방법

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Publication number Publication date
TWI814298B (zh) 2023-09-01
JP2022155713A (ja) 2022-10-14
US20220319875A1 (en) 2022-10-06
JP2025163234A (ja) 2025-10-28
CN115148627A (zh) 2022-10-04
KR20220136194A (ko) 2022-10-07
JP7726653B2 (ja) 2025-08-20
TW202240742A (zh) 2022-10-16
CN115148627B (zh) 2025-10-10

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