JP7726653B2 - 基板乾燥装置及び基板処理装置 - Google Patents

基板乾燥装置及び基板処理装置

Info

Publication number
JP7726653B2
JP7726653B2 JP2021059075A JP2021059075A JP7726653B2 JP 7726653 B2 JP7726653 B2 JP 7726653B2 JP 2021059075 A JP2021059075 A JP 2021059075A JP 2021059075 A JP2021059075 A JP 2021059075A JP 7726653 B2 JP7726653 B2 JP 7726653B2
Authority
JP
Japan
Prior art keywords
substrate
drying
liquid
unit
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2021059075A
Other languages
English (en)
Japanese (ja)
Other versions
JP2022155713A (ja
JP2022155713A5 (ja
Inventor
陽子 埀野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shibaura Mechatronics Corp
Original Assignee
Shibaura Mechatronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shibaura Mechatronics Corp filed Critical Shibaura Mechatronics Corp
Priority to JP2021059075A priority Critical patent/JP7726653B2/ja
Priority to CN202210282507.5A priority patent/CN115148627B/zh
Priority to US17/656,059 priority patent/US20220319875A1/en
Priority to TW111110812A priority patent/TWI814298B/zh
Priority to KR1020220037826A priority patent/KR102806621B1/ko
Publication of JP2022155713A publication Critical patent/JP2022155713A/ja
Publication of JP2022155713A5 publication Critical patent/JP2022155713A5/ja
Priority to JP2025132308A priority patent/JP2025163234A/ja
Application granted granted Critical
Publication of JP7726653B2 publication Critical patent/JP7726653B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0408—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B13/00—Accessories or details of general applicability for machines or apparatus for cleaning
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H10P72/0424—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7612—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by lifting arrangements, e.g. lift pins

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Solid Materials (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
JP2021059075A 2021-03-31 2021-03-31 基板乾燥装置及び基板処理装置 Active JP7726653B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2021059075A JP7726653B2 (ja) 2021-03-31 2021-03-31 基板乾燥装置及び基板処理装置
CN202210282507.5A CN115148627B (zh) 2021-03-31 2022-03-22 基板干燥装置及基板处理装置
TW111110812A TWI814298B (zh) 2021-03-31 2022-03-23 基板乾燥裝置及基板處理裝置
US17/656,059 US20220319875A1 (en) 2021-03-31 2022-03-23 Substrate drying apparatus and substrate processing apparatus
KR1020220037826A KR102806621B1 (ko) 2021-03-31 2022-03-28 기판 건조 장치 및 기판 처리 장치
JP2025132308A JP2025163234A (ja) 2021-03-31 2025-08-07 基板乾燥装置及び基板処理装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2021059075A JP7726653B2 (ja) 2021-03-31 2021-03-31 基板乾燥装置及び基板処理装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2025132308A Division JP2025163234A (ja) 2021-03-31 2025-08-07 基板乾燥装置及び基板処理装置

Publications (3)

Publication Number Publication Date
JP2022155713A JP2022155713A (ja) 2022-10-14
JP2022155713A5 JP2022155713A5 (ja) 2024-12-12
JP7726653B2 true JP7726653B2 (ja) 2025-08-20

Family

ID=83405199

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2021059075A Active JP7726653B2 (ja) 2021-03-31 2021-03-31 基板乾燥装置及び基板処理装置
JP2025132308A Pending JP2025163234A (ja) 2021-03-31 2025-08-07 基板乾燥装置及び基板処理装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2025132308A Pending JP2025163234A (ja) 2021-03-31 2025-08-07 基板乾燥装置及び基板処理装置

Country Status (5)

Country Link
US (1) US20220319875A1 (https=)
JP (2) JP7726653B2 (https=)
KR (1) KR102806621B1 (https=)
CN (1) CN115148627B (https=)
TW (1) TWI814298B (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7625458B2 (ja) * 2021-03-22 2025-02-03 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
CN116153801A (zh) * 2022-12-31 2023-05-23 华海清科股份有限公司 一种光学测量装置和减薄设备

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004012259A1 (ja) 2002-07-25 2004-02-05 Tokyo Electron Limited 基板処理容器
JP2008128567A (ja) 2006-11-21 2008-06-05 Dainippon Screen Mfg Co Ltd 基板乾燥方法および基板乾燥装置
JP2013115370A (ja) 2011-11-30 2013-06-10 Tokyo Electron Ltd 基板処理方法、この基板処理方法を実行するためのコンピュータプログラムが記録された記録媒体、および基板処理装置
US20130279889A1 (en) 2012-04-19 2013-10-24 Shenzhen China Star Optoelectronics Technology Co. Ltd. Device for Prebaking Alignment Film by Using Temperature-Controllable Pin to Support Substrate and Method Thereof
JP2016152274A (ja) 2015-02-16 2016-08-22 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP2017069353A (ja) 2015-09-29 2017-04-06 芝浦メカトロニクス株式会社 基板処理装置及び基板処理方法
JP2017069354A (ja) 2015-09-29 2017-04-06 芝浦メカトロニクス株式会社 基板処理装置及び基板処理方法
WO2019146776A1 (ja) 2018-01-29 2019-08-01 東京エレクトロン株式会社 基板乾燥装置、基板乾燥方法および記憶媒体

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* Cited by examiner, † Cited by third party
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US6127279A (en) * 1994-09-26 2000-10-03 Semiconductor Energy Laboratory Co., Ltd. Solution applying method
JP3976084B2 (ja) * 1998-07-03 2007-09-12 大日本スクリーン製造株式会社 基板処理方法及び基板処理装置
JP4698407B2 (ja) * 2005-12-20 2011-06-08 大日本スクリーン製造株式会社 基板処理装置および基板処理方法
JP2008034779A (ja) 2006-06-27 2008-02-14 Dainippon Screen Mfg Co Ltd 基板処理方法および基板処理装置
TWI826650B (zh) * 2012-11-26 2023-12-21 美商應用材料股份有限公司 用於高深寬比半導體元件結構具有污染物去除之無黏附乾燥處理
JP6400919B2 (ja) * 2013-03-07 2018-10-03 芝浦メカトロニクス株式会社 基板処理装置及び基板処理方法
JP6455962B2 (ja) * 2013-03-18 2019-01-23 芝浦メカトロニクス株式会社 基板処理装置及び基板処理方法
JP6351993B2 (ja) * 2013-03-18 2018-07-04 芝浦メカトロニクス株式会社 基板処理装置及び基板処理方法
JP6426927B2 (ja) * 2013-09-30 2018-11-21 芝浦メカトロニクス株式会社 基板処理装置及び基板処理方法
JP6670674B2 (ja) * 2016-05-18 2020-03-25 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP6737666B2 (ja) * 2016-09-12 2020-08-12 株式会社Ｓｃｒｅｅｎホールディングス 犠牲膜形成方法、基板処理方法および基板処理装置
JP6825956B2 (ja) * 2017-03-28 2021-02-03 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置、基板処理方法および紫外線照射手段の選択方法
JP7100564B2 (ja) * 2018-11-09 2022-07-13 株式会社Ｓｃｒｅｅｎホールディングス 基板乾燥方法および基板処理装置
KR102433558B1 (ko) * 2019-07-11 2022-08-19 세메스 주식회사 기판 처리 장치 및 기판 처리 방법

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004012259A1 (ja) 2002-07-25 2004-02-05 Tokyo Electron Limited 基板処理容器
JP2008128567A (ja) 2006-11-21 2008-06-05 Dainippon Screen Mfg Co Ltd 基板乾燥方法および基板乾燥装置
JP2013115370A (ja) 2011-11-30 2013-06-10 Tokyo Electron Ltd 基板処理方法、この基板処理方法を実行するためのコンピュータプログラムが記録された記録媒体、および基板処理装置
US20130279889A1 (en) 2012-04-19 2013-10-24 Shenzhen China Star Optoelectronics Technology Co. Ltd. Device for Prebaking Alignment Film by Using Temperature-Controllable Pin to Support Substrate and Method Thereof
JP2016152274A (ja) 2015-02-16 2016-08-22 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP2017069353A (ja) 2015-09-29 2017-04-06 芝浦メカトロニクス株式会社 基板処理装置及び基板処理方法
JP2017069354A (ja) 2015-09-29 2017-04-06 芝浦メカトロニクス株式会社 基板処理装置及び基板処理方法
WO2019146776A1 (ja) 2018-01-29 2019-08-01 東京エレクトロン株式会社 基板乾燥装置、基板乾燥方法および記憶媒体

Also Published As

Publication number Publication date
KR102806621B1 (ko) 2025-05-13
TWI814298B (zh) 2023-09-01
JP2022155713A (ja) 2022-10-14
US20220319875A1 (en) 2022-10-06
JP2025163234A (ja) 2025-10-28
CN115148627A (zh) 2022-10-04
KR20220136194A (ko) 2022-10-07
TW202240742A (zh) 2022-10-16
CN115148627B (zh) 2025-10-10

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