KR102762517B1 - 칩형 세라믹 전자부품 및 그 제조 방법 - Google Patents
칩형 세라믹 전자부품 및 그 제조 방법 Download PDFInfo
- Publication number
- KR102762517B1 KR102762517B1 KR1020237009157A KR20237009157A KR102762517B1 KR 102762517 B1 KR102762517 B1 KR 102762517B1 KR 1020237009157 A KR1020237009157 A KR 1020237009157A KR 20237009157 A KR20237009157 A KR 20237009157A KR 102762517 B1 KR102762517 B1 KR 102762517B1
- Authority
- KR
- South Korea
- Prior art keywords
- glass
- conductive paste
- free
- ceramic body
- sintered layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000919 ceramic Substances 0.000 title claims abstract description 139
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 34
- 239000000843 powder Substances 0.000 claims abstract description 70
- 229920005989 resin Polymers 0.000 claims abstract description 70
- 239000011347 resin Substances 0.000 claims abstract description 70
- 239000002184 metal Substances 0.000 claims abstract description 67
- 229910052751 metal Inorganic materials 0.000 claims abstract description 67
- 238000000034 method Methods 0.000 claims abstract description 64
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 59
- 239000011521 glass Substances 0.000 claims abstract description 58
- 229920001187 thermosetting polymer Polymers 0.000 claims abstract description 50
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 41
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 28
- 229910052718 tin Inorganic materials 0.000 claims abstract description 27
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 23
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 22
- 239000000956 alloy Substances 0.000 claims abstract description 22
- 229910052802 copper Inorganic materials 0.000 claims abstract description 17
- 239000010949 copper Substances 0.000 claims abstract description 17
- 239000011135 tin Substances 0.000 claims abstract description 15
- 238000010438 heat treatment Methods 0.000 claims abstract description 14
- 239000003985 ceramic capacitor Substances 0.000 claims description 26
- 239000004020 conductor Substances 0.000 claims description 25
- 238000007747 plating Methods 0.000 claims description 16
- 238000001723 curing Methods 0.000 claims description 12
- 229910001128 Sn alloy Inorganic materials 0.000 claims description 7
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 238000013007 heat curing Methods 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 4
- 238000005452 bending Methods 0.000 abstract description 2
- 238000005245 sintering Methods 0.000 description 13
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical class [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 9
- 238000001035 drying Methods 0.000 description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- 229910052799 carbon Inorganic materials 0.000 description 6
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- CLDVQCMGOSGNIW-UHFFFAOYSA-N nickel tin Chemical compound [Ni].[Sn] CLDVQCMGOSGNIW-UHFFFAOYSA-N 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 2
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000013507 mapping Methods 0.000 description 2
- 239000005011 phenolic resin Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 238000000550 scanning electron microscopy energy dispersive X-ray spectroscopy Methods 0.000 description 2
- 238000000992 sputter etching Methods 0.000 description 2
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- VRUVRQYVUDCDMT-UHFFFAOYSA-N [Sn].[Ni].[Cu] Chemical compound [Sn].[Ni].[Cu] VRUVRQYVUDCDMT-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000000445 field-emission scanning electron microscopy Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000007561 laser diffraction method Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000000790 scattering method Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G13/00—Apparatus specially adapted for manufacturing capacitors; Processes specially adapted for manufacturing capacitors not provided for in groups H01G4/00 - H01G11/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
- H01G4/008—Selection of materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
- H01G4/012—Form of non-self-supporting electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/228—Terminals
- H01G4/232—Terminals electrically connecting two or more layers of a stacked or rolled capacitor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/14—Conductive material dispersed in non-conductive inorganic material
- H01B1/16—Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/228—Terminals
- H01G4/232—Terminals electrically connecting two or more layers of a stacked or rolled capacitor
- H01G4/2325—Terminals electrically connecting two or more layers of a stacked or rolled capacitor characterised by the material of the terminals
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Ceramic Capacitors (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JPJP-P-2020-160733 | 2020-09-25 | ||
| JP2020160733 | 2020-09-25 | ||
| PCT/JP2021/032563 WO2022065004A1 (ja) | 2020-09-25 | 2021-09-04 | チップ型セラミック電子部品およびその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20230048436A KR20230048436A (ko) | 2023-04-11 |
| KR102762517B1 true KR102762517B1 (ko) | 2025-02-05 |
Family
ID=80845218
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020237009157A Active KR102762517B1 (ko) | 2020-09-25 | 2021-09-04 | 칩형 세라믹 전자부품 및 그 제조 방법 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US12482601B2 (https=) |
| JP (1) | JP7494925B2 (https=) |
| KR (1) | KR102762517B1 (https=) |
| CN (1) | CN116235262A (https=) |
| WO (1) | WO2022065004A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101652850B1 (ko) * | 2015-01-30 | 2016-08-31 | 삼성전기주식회사 | 칩 전자부품, 그 제조방법 및 이를 구비한 기판 |
| KR20230102299A (ko) * | 2021-12-30 | 2023-07-07 | 삼성전기주식회사 | 세라믹 전자부품 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20180233289A1 (en) * | 2017-01-25 | 2018-08-16 | Holy Stone Enterprise Co., Ltd. | Multilayer ceramic capacitor |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001118424A (ja) * | 1999-10-19 | 2001-04-27 | Kawatetsu Mining Co Ltd | 導電ペースト用銅合金粉 |
| JP2002367849A (ja) * | 2001-06-11 | 2002-12-20 | Sumitomo Electric Ind Ltd | セラミックコンデンサ用導電ペーストとそれを用いたセラミックコンデンサ |
| US8168889B2 (en) | 2005-12-22 | 2012-05-01 | Namics Corporation | Thermosetting conductive paste and multilayer ceramic part having an external electrode formed using the same |
| JP5156328B2 (ja) * | 2007-10-18 | 2013-03-06 | 福田金属箔粉工業株式会社 | 導電材ペースト用銅合金粉 |
| JP5266874B2 (ja) | 2008-05-23 | 2013-08-21 | パナソニック株式会社 | セラミック電子部品の製造方法 |
| JP2010123647A (ja) * | 2008-11-18 | 2010-06-03 | Panasonic Corp | セラミックス電子部品、及びこれを用いた電子機器 |
| JP2013058558A (ja) * | 2011-09-07 | 2013-03-28 | Tdk Corp | 電子部品 |
| US9490055B2 (en) * | 2011-10-31 | 2016-11-08 | Murata Manufacturing Co., Ltd. | Ceramic electronic component and manufacturing method thereof |
| KR101775913B1 (ko) * | 2012-12-18 | 2017-09-07 | 가부시키가이샤 무라타 세이사쿠쇼 | 적층 세라믹 전자부품 |
| JP2015109411A (ja) * | 2013-10-25 | 2015-06-11 | 株式会社村田製作所 | セラミック電子部品 |
| JP2016072485A (ja) * | 2014-09-30 | 2016-05-09 | 株式会社村田製作所 | 積層セラミックコンデンサ |
| US20160276303A1 (en) * | 2015-03-17 | 2016-09-22 | E I Du Pont De Nemours And Company | Electronic component |
| JP2017034010A (ja) * | 2015-07-30 | 2017-02-09 | 株式会社村田製作所 | 積層セラミックコンデンサおよびその製造方法 |
| JP2018063998A (ja) * | 2016-10-11 | 2018-04-19 | 日立化成株式会社 | 電極用組成物、下地電極の製造方法、電子部品の製造方法及び電子部品 |
| JP2018067568A (ja) * | 2016-10-17 | 2018-04-26 | 株式会社村田製作所 | 積層セラミックコンデンサの製造方法 |
| KR101941954B1 (ko) * | 2017-07-04 | 2019-01-24 | 삼성전기 주식회사 | 적층 세라믹 커패시터 |
| WO2020195522A1 (ja) * | 2019-03-28 | 2020-10-01 | 株式会社村田製作所 | チップ型セラミック電子部品およびその製造方法 |
| KR102558658B1 (ko) * | 2019-03-28 | 2023-07-24 | 가부시키가이샤 무라타 세이사쿠쇼 | 칩형 세라믹 전자부품의 제조 방법 |
-
2021
- 2021-09-04 JP JP2022551834A patent/JP7494925B2/ja active Active
- 2021-09-04 CN CN202180063632.0A patent/CN116235262A/zh active Pending
- 2021-09-04 KR KR1020237009157A patent/KR102762517B1/ko active Active
- 2021-09-04 WO PCT/JP2021/032563 patent/WO2022065004A1/ja not_active Ceased
-
2023
- 2023-03-16 US US18/122,154 patent/US12482601B2/en active Active
-
2024
- 2024-10-31 US US18/932,842 patent/US20250062074A1/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20180233289A1 (en) * | 2017-01-25 | 2018-08-16 | Holy Stone Enterprise Co., Ltd. | Multilayer ceramic capacitor |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2022065004A1 (ja) | 2022-03-31 |
| JPWO2022065004A1 (https=) | 2022-03-31 |
| KR20230048436A (ko) | 2023-04-11 |
| CN116235262A (zh) | 2023-06-06 |
| US20250062074A1 (en) | 2025-02-20 |
| US12482601B2 (en) | 2025-11-25 |
| JP7494925B2 (ja) | 2024-06-04 |
| US20230230766A1 (en) | 2023-07-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0105 | International application |
Patent event date: 20230316 Patent event code: PA01051R01D Comment text: International Patent Application |
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| PA0201 | Request for examination | ||
| PG1501 | Laying open of application | ||
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 20240527 Patent event code: PE09021S01D |
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| E701 | Decision to grant or registration of patent right | ||
| PE0701 | Decision of registration |
Patent event code: PE07011S01D Comment text: Decision to Grant Registration Patent event date: 20250113 |
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| PG1601 | Publication of registration |