KR102760469B1 - 반도체 기판의 제조 방법 및 반도체 장치의 제조 방법 - Google Patents

반도체 기판의 제조 방법 및 반도체 장치의 제조 방법 Download PDF

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Publication number
KR102760469B1
KR102760469B1 KR1020237021787A KR20237021787A KR102760469B1 KR 102760469 B1 KR102760469 B1 KR 102760469B1 KR 1020237021787 A KR1020237021787 A KR 1020237021787A KR 20237021787 A KR20237021787 A KR 20237021787A KR 102760469 B1 KR102760469 B1 KR 102760469B1
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South Korea
Prior art keywords
substrate
semiconductor layer
nitride semiconductor
manufacturing
reversible adhesive
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Korean (ko)
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KR20230116016A (ko
Inventor
슈이치 히자
구니히코 니시무라
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미쓰비시덴키 가부시키가이샤
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    • H01L21/0254—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H10P34/422—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing using incoherent radiation
    • H01L21/02617—
    • H01L21/185—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7434—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/744—Details of chemical or physical process used for separating the auxiliary support from a device or a wafer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding

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  • Recrystallisation Techniques (AREA)
KR1020237021787A 2021-02-04 2021-02-04 반도체 기판의 제조 방법 및 반도체 장치의 제조 방법 Active KR102760469B1 (ko)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2021/004035 WO2022168217A1 (ja) 2021-02-04 2021-02-04 半導体基板の製造方法および半導体装置の製造方法

Publications (2)

Publication Number Publication Date
KR20230116016A KR20230116016A (ko) 2023-08-03
KR102760469B1 true KR102760469B1 (ko) 2025-01-24

Family

ID=82740968

Family Applications (1)

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KR1020237021787A Active KR102760469B1 (ko) 2021-02-04 2021-02-04 반도체 기판의 제조 방법 및 반도체 장치의 제조 방법

Country Status (6)

Country Link
US (1) US20240030055A1 (https=)
EP (1) EP4290553A4 (https=)
JP (1) JP7475503B2 (https=)
KR (1) KR102760469B1 (https=)
CN (1) CN116868309A (https=)
WO (1) WO2022168217A1 (https=)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007189171A (ja) 2006-01-16 2007-07-26 Musashino Eng:Kk ダイヤモンドヒートスプレッダの常温接合方法，及び半導体デバイスの放熱部
JP2011249576A (ja) 2010-05-27 2011-12-08 Kobe Steel Ltd ダイヤモンド・アルミニウム接合体及びその製造方法
JP2014239179A (ja) 2013-06-10 2014-12-18 日本電信電話株式会社 窒化物半導体装置の製造方法
JP2016507450A (ja) 2012-12-18 2016-03-10 エレメント シックス リミテッド 半導体デバイス用基板
WO2018143344A1 (ja) 2017-02-02 2018-08-09 三菱電機株式会社 半導体製造方法および半導体製造装置

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06268183A (ja) 1993-03-15 1994-09-22 Fujitsu Ltd 半導体装置の製造方法
US6071795A (en) * 1998-01-23 2000-06-06 The Regents Of The University Of California Separation of thin films from transparent substrates by selective optical processing
WO2002084631A1 (en) * 2001-04-11 2002-10-24 Sony Corporation Element transfer method, element arrangmenet method using the same, and image display apparatus production method
US6911375B2 (en) * 2003-06-02 2005-06-28 International Business Machines Corporation Method of fabricating silicon devices on sapphire with wafer bonding at low temperature
JP2005109208A (ja) 2003-09-30 2005-04-21 Shin Etsu Handotai Co Ltd 発光素子の製造方法
EP1571705A3 (fr) * 2004-03-01 2006-01-04 S.O.I.Tec Silicon on Insulator Technologies Réalisation d'une entité en matériau semiconducteur sur substrat
US20080122119A1 (en) * 2006-08-31 2008-05-29 Avery Dennison Corporation Method and apparatus for creating rfid devices using masking techniques
FR2921515B1 (fr) * 2007-09-25 2010-07-30 Commissariat Energie Atomique Procede de fabrication de structures semiconductrices utiles pour la realisation de substrats semiconducteur- sur-isolant, et ses applications.
US8764026B2 (en) * 2009-04-16 2014-07-01 Suss Microtec Lithography, Gmbh Device for centering wafers
JP6004100B2 (ja) * 2013-05-24 2016-10-05 富士電機株式会社 半導体装置の製造方法
GB2544563B (en) * 2015-11-20 2019-02-06 Rfhic Corp Mounting of semiconductor-on-diamond wafers for device processing
US10767088B2 (en) 2016-01-07 2020-09-08 National Institute Of Advanced Industrial Science And Technology Photoreversible adhesive agent
GB201610886D0 (en) * 2016-06-22 2016-08-03 Element Six Tech Ltd Bonding of diamond wafers to carrier substrates
JP2019527477A (ja) 2016-07-12 2019-09-26 キューエムエイティ・インコーポレーテッド ドナー基材を再生するための方法
JP2019026817A (ja) 2017-08-04 2019-02-21 国立研究開発法人産業技術総合研究所 光応答性粘接着剤
KR102734318B1 (ko) * 2019-11-08 2024-11-25 에베 그룹 에. 탈너 게엠베하 기판 결합 장치 및 방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007189171A (ja) 2006-01-16 2007-07-26 Musashino Eng:Kk ダイヤモンドヒートスプレッダの常温接合方法，及び半導体デバイスの放熱部
JP2011249576A (ja) 2010-05-27 2011-12-08 Kobe Steel Ltd ダイヤモンド・アルミニウム接合体及びその製造方法
JP2016507450A (ja) 2012-12-18 2016-03-10 エレメント シックス リミテッド 半導体デバイス用基板
JP2014239179A (ja) 2013-06-10 2014-12-18 日本電信電話株式会社 窒化物半導体装置の製造方法
WO2018143344A1 (ja) 2017-02-02 2018-08-09 三菱電機株式会社 半導体製造方法および半導体製造装置

Also Published As

Publication number Publication date
KR20230116016A (ko) 2023-08-03
EP4290553A1 (en) 2023-12-13
WO2022168217A1 (ja) 2022-08-11
CN116868309A (zh) 2023-10-10
US20240030055A1 (en) 2024-01-25
JPWO2022168217A1 (https=) 2022-08-11
JP7475503B2 (ja) 2024-04-26
EP4290553A4 (en) 2024-04-03

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