KR102717556B1 - 액정 디스플레이를 위한 높은 커패시턴스의 커패시터를 위한 계면 엔지니어링 - Google Patents
액정 디스플레이를 위한 높은 커패시턴스의 커패시터를 위한 계면 엔지니어링 Download PDFInfo
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- KR102717556B1 KR102717556B1 KR1020187025600A KR20187025600A KR102717556B1 KR 102717556 B1 KR102717556 B1 KR 102717556B1 KR 1020187025600 A KR1020187025600 A KR 1020187025600A KR 20187025600 A KR20187025600 A KR 20187025600A KR 102717556 B1 KR102717556 B1 KR 102717556B1
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- Microelectronics & Electronic Packaging (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
- Chemical Vapour Deposition (AREA)
- Manufacturing & Machinery (AREA)
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Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201662292017P | 2016-02-05 | 2016-02-05 | |
| US62/292,017 | 2016-02-05 | ||
| PCT/US2017/013953 WO2017136141A1 (en) | 2016-02-05 | 2017-01-18 | Interface engineering for high capacitance capacitor for liquid crystal display |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20180102207A KR20180102207A (ko) | 2018-09-14 |
| KR102717556B1 true KR102717556B1 (ko) | 2024-10-14 |
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| US11049887B2 (en) * | 2017-11-10 | 2021-06-29 | Applied Materials, Inc. | Layer stack for display applications |
| US20190206691A1 (en) * | 2018-01-04 | 2019-07-04 | Applied Materials, Inc. | High-k gate insulator for a thin-film transistor |
| US20200066858A1 (en) * | 2018-08-24 | 2020-02-27 | Qualcomm Incorporated | High performance thin film transistor with negative index material |
| TWI698029B (zh) * | 2018-11-28 | 2020-07-01 | 財團法人金屬工業研究發展中心 | 形成半導體結構之方法 |
| CN109742087B (zh) * | 2018-12-27 | 2021-08-24 | 武汉华星光电技术有限公司 | 阵列基板及其制备方法 |
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| JP7292163B2 (ja) | 2019-09-19 | 2023-06-16 | 株式会社ディスコ | 被加工物の加工方法 |
| KR102688604B1 (ko) * | 2019-11-04 | 2024-07-25 | 삼성디스플레이 주식회사 | 표시 장치 |
| JP7447432B2 (ja) * | 2019-11-05 | 2024-03-12 | 東京エレクトロン株式会社 | 基板を処理する装置、原料カートリッジ、基板を処理する方法、及び原料カートリッジを製造する方法 |
| TWI887322B (zh) | 2020-01-06 | 2025-06-21 | 荷蘭商Asm Ip私人控股有限公司 | 反應器系統、抬升銷、及處理方法 |
| CN111943175A (zh) * | 2020-07-29 | 2020-11-17 | 北海惠科光电技术有限公司 | 一种石墨烯薄膜和石墨烯材料的制作方法以及显示面板 |
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| US12439650B2 (en) * | 2021-01-15 | 2025-10-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | CMOS fabrication methods for back-gate transistor |
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| CN115763206A (zh) * | 2022-11-15 | 2023-03-07 | 上海华力微电子有限公司 | 一种连接组件及应用其的刻蚀机 |
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-
2016
- 2016-06-30 US US15/198,955 patent/US20170229554A1/en not_active Abandoned
-
2017
- 2017-01-18 WO PCT/US2017/013953 patent/WO2017136141A1/en not_active Ceased
- 2017-01-18 CN CN201780014750.6A patent/CN108700788B/zh active Active
- 2017-01-18 KR KR1020187025600A patent/KR102717556B1/ko active Active
- 2017-01-18 JP JP2018541182A patent/JP6966457B2/ja active Active
- 2017-01-20 US US15/411,724 patent/US10381454B2/en active Active
Also Published As
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| US20170229554A1 (en) | 2017-08-10 |
| CN108700788B (zh) | 2022-09-30 |
| US10381454B2 (en) | 2019-08-13 |
| CN108700788A (zh) | 2018-10-23 |
| KR20180102207A (ko) | 2018-09-14 |
| US20170229490A1 (en) | 2017-08-10 |
| JP2019507903A (ja) | 2019-03-22 |
| JP6966457B2 (ja) | 2021-11-17 |
| WO2017136141A1 (en) | 2017-08-10 |
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