JP6966457B2 - 液晶ディスプレイ用大容量コンデンサのための界面技術 - Google Patents

液晶ディスプレイ用大容量コンデンサのための界面技術 Download PDF

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JP6966457B2
JP6966457B2 JP2018541182A JP2018541182A JP6966457B2 JP 6966457 B2 JP6966457 B2 JP 6966457B2 JP 2018541182 A JP2018541182 A JP 2018541182A JP 2018541182 A JP2018541182 A JP 2018541182A JP 6966457 B2 JP6966457 B2 JP 6966457B2
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layer
electrode
substrate
indium tin
tin oxide
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JP2019507903A (ja
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シュエナ チャン，
ドンギル イム，
ウェンチン タイ，
ハーヴェイ ユー，
テギョン ウォン，
シャオ−リン ヤン，
ワン−ユイ リン，
ユン−チュー ツァイ，
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Applied Materials Inc
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Applied Materials Inc
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  • Physics & Mathematics (AREA)
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Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11049887B2 (en) * 2017-11-10 2021-06-29 Applied Materials, Inc. Layer stack for display applications
US20190206691A1 (en) * 2018-01-04 2019-07-04 Applied Materials, Inc. High-k gate insulator for a thin-film transistor
US20200066858A1 (en) * 2018-08-24 2020-02-27 Qualcomm Incorporated High performance thin film transistor with negative index material
TWI698029B (zh) * 2018-11-28 2020-07-01 財團法人金屬工業研究發展中心 形成半導體結構之方法
CN109742087B (zh) * 2018-12-27 2021-08-24 武汉华星光电技术有限公司 阵列基板及其制备方法
KR102704437B1 (ko) * 2019-06-13 2024-09-09 삼성디스플레이 주식회사 박막트랜지스터 기판 및 이를 구비한 디스플레이 장치
JP7292163B2 (ja) 2019-09-19 2023-06-16 株式会社ディスコ 被加工物の加工方法
KR102688604B1 (ko) * 2019-11-04 2024-07-25 삼성디스플레이 주식회사 표시 장치
JP7447432B2 (ja) * 2019-11-05 2024-03-12 東京エレクトロン株式会社 基板を処理する装置、原料カートリッジ、基板を処理する方法、及び原料カートリッジを製造する方法
TWI887322B (zh) 2020-01-06 2025-06-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 反應器系統、抬升銷、及處理方法
CN111943175A (zh) * 2020-07-29 2020-11-17 北海惠科光电技术有限公司 一种石墨烯薄膜和石墨烯材料的制作方法以及显示面板
KR102890627B1 (ko) * 2020-12-24 2025-11-25 삼성디스플레이 주식회사 표시 장치 및 표시 장치의 제조 방법
US12439650B2 (en) * 2021-01-15 2025-10-07 Taiwan Semiconductor Manufacturing Co., Ltd. CMOS fabrication methods for back-gate transistor
CN117596917A (zh) * 2022-08-19 2024-02-23 华为技术有限公司 折叠显示面板及其制备方法、电子设备
CN115763206A (zh) * 2022-11-15 2023-03-07 上海华力微电子有限公司 一种连接组件及应用其的刻蚀机

Family Cites Families (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11148078A (ja) 1997-11-18 1999-06-02 Sanyo Electric Co Ltd アクティブマトリクス型液晶表示装置
US7588989B2 (en) 2001-02-02 2009-09-15 Samsung Electronic Co., Ltd. Dielectric multilayer structures of microelectronic devices and methods for fabricating the same
JP2002299632A (ja) 2001-03-30 2002-10-11 Sanyo Electric Co Ltd 半導体装置及びアクティブマトリクス型表示装置
KR100579194B1 (ko) 2004-05-28 2006-05-11 삼성에스디아이 주식회사 유기 전계 발광 표시 소자의 제조방법
KR101133753B1 (ko) 2004-07-26 2012-04-09 삼성전자주식회사 감지 소자를 내장한 액정 표시 장치
KR100700642B1 (ko) 2004-12-13 2007-03-27 삼성에스디아이 주식회사 유기전계발광표시소자 및 그 제조방법
US20060214154A1 (en) * 2005-03-24 2006-09-28 Eastman Kodak Company Polymeric gate dielectrics for organic thin film transistors and methods of making the same
JP5148912B2 (ja) * 2006-04-06 2013-02-20 株式会社半導体エネルギー研究所 液晶表示装置及び半導体装置、並びに電子機器
JP2008203761A (ja) 2007-02-22 2008-09-04 Hitachi Displays Ltd 表示装置
TW200921225A (en) * 2007-11-06 2009-05-16 Au Optronics Corp Transflective liquid crystal display panel
CN101452162A (zh) 2007-12-07 2009-06-10 上海广电Nec液晶显示器有限公司 液晶显示面板中的阵列基板及其制造方法
KR101248651B1 (ko) * 2008-02-08 2013-03-28 도쿄엘렉트론가부시키가이샤 절연막의 형성 방법, 컴퓨터 판독 가능한 기억 매체 및 처리 시스템
US20090278120A1 (en) * 2008-05-09 2009-11-12 Korea Institute Of Science And Technology Thin Film Transistor
TWI380106B (en) * 2008-08-01 2012-12-21 Chunghwa Picture Tubes Ltd Pixel structure and method for repairing the same
CN101847641B (zh) * 2009-03-27 2011-12-28 京东方科技集团股份有限公司 阵列基板及其制造方法和宽视角液晶显示器
US8115883B2 (en) 2009-08-27 2012-02-14 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
JP2011059157A (ja) * 2009-09-07 2011-03-24 Seiko Epson Corp 液晶装置及び電子機器
KR101097333B1 (ko) 2010-02-11 2011-12-23 삼성모바일디스플레이주식회사 액정표시장치
JP5437895B2 (ja) 2010-04-20 2014-03-12 株式会社ジャパンディスプレイ 表示装置及びその製造方法
KR101710179B1 (ko) 2010-06-03 2017-02-27 삼성디스플레이 주식회사 평판 표시 장치 및 그 제조 방법
KR101824537B1 (ko) 2010-10-01 2018-03-15 삼성디스플레이 주식회사 박막 트랜지스터 및 이를 포함하는 유기 발광 디스플레이
KR20120060664A (ko) * 2010-12-02 2012-06-12 삼성전자주식회사 표시 장치 및 표시 장치 제조 방법
KR20120061312A (ko) 2010-12-03 2012-06-13 삼성모바일디스플레이주식회사 유기 전계 발광 표시장치 및 그의 제조방법
TW201224615A (en) * 2010-12-06 2012-06-16 Chunghwa Picture Tubes Ltd Pixel array substrate and method of fabricating the same
KR20120124527A (ko) * 2011-05-04 2012-11-14 삼성디스플레이 주식회사 표시 장치 및 표시 장치의 제조 방법
TWI423310B (zh) 2011-06-10 2014-01-11 Au Optronics Corp 畫素結構
KR101878882B1 (ko) * 2011-10-21 2018-07-17 엘지디스플레이 주식회사 나노 메쉬 투명 전극과 이의 제조방법, 나노 메쉬 투명 전극을 포함하는 터치 스크린 및 디스플레이 장치
KR102025836B1 (ko) * 2011-11-07 2019-09-27 삼성디스플레이 주식회사 박막 트랜지스터 어레이 기판, 이를 포함하는 유기 발광 표시 장치 및 그 제조 방법
KR101945237B1 (ko) 2012-06-01 2019-02-08 삼성디스플레이 주식회사 유기 발광 표시 장치
KR20150040873A (ko) * 2012-08-03 2015-04-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US20150221773A1 (en) * 2012-09-05 2015-08-06 Sharp Kabushiki Kaisha Semiconductor device and method for producing same
CN102981341A (zh) * 2012-12-25 2013-03-20 信利半导体有限公司 薄膜晶体管液晶显示器
TWI607510B (zh) * 2012-12-28 2017-12-01 半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
US9178042B2 (en) * 2013-01-08 2015-11-03 Globalfoundries Inc Crystalline thin-film transistor
CN103336396B (zh) * 2013-06-28 2016-03-23 京东方科技集团股份有限公司 阵列基板及其制造方法和显示装置
JP2015015440A (ja) * 2013-07-08 2015-01-22 ソニー株式会社 半導体装置およびその製造方法、並びに表示装置および電子機器
KR20150021622A (ko) * 2013-08-20 2015-03-03 삼성디스플레이 주식회사 표시패널
TWI551926B (zh) * 2014-01-27 2016-10-01 友達光電股份有限公司 畫素結構
KR20160114510A (ko) * 2015-03-24 2016-10-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 터치 패널
US20170017327A1 (en) * 2015-07-17 2017-01-19 Innolux Corporation Touch display device

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CN108700788B (zh) 2022-09-30
US10381454B2 (en) 2019-08-13
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KR20180102207A (ko) 2018-09-14
US20170229490A1 (en) 2017-08-10
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