KR102711174B1 - 배선 전극 - Google Patents

배선 전극 Download PDF

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Publication number
KR102711174B1
KR102711174B1 KR1020217038803A KR20217038803A KR102711174B1 KR 102711174 B1 KR102711174 B1 KR 102711174B1 KR 1020217038803 A KR1020217038803 A KR 1020217038803A KR 20217038803 A KR20217038803 A KR 20217038803A KR 102711174 B1 KR102711174 B1 KR 102711174B1
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KR
South Korea
Prior art keywords
layer
low
outer periphery
wiring electrode
resistance
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KR1020217038803A
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English (en)
Korean (ko)
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KR20220002537A (ko
Inventor
유지 도요따
Original Assignee
가부시키가이샤 무라타 세이사쿠쇼
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Publication of KR20220002537A publication Critical patent/KR20220002537A/ko
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02992—Details of bus bars, contact pads or other electrical connections for finger electrodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
    • H03H9/14538—Formation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/87—Electrodes or interconnections, e.g. leads or terminals
    • H10N30/877—Conductive materials
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
    • H03H9/14538—Formation
    • H03H9/14541—Multilayer finger or busbar electrode
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/25—Constructional features of resonators using surface acoustic waves

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
KR1020217038803A 2019-05-30 2020-05-29 배선 전극 Active KR102711174B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2019-100853 2019-05-30
JP2019100853 2019-05-30
PCT/JP2020/021307 WO2020241820A1 (ja) 2019-05-30 2020-05-29 配線電極

Publications (2)

Publication Number Publication Date
KR20220002537A KR20220002537A (ko) 2022-01-06
KR102711174B1 true KR102711174B1 (ko) 2024-09-30

Family

ID=73553184

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020217038803A Active KR102711174B1 (ko) 2019-05-30 2020-05-29 배선 전극

Country Status (5)

Country Link
US (1) US11985903B2 (https=)
JP (1) JP7268730B2 (https=)
KR (1) KR102711174B1 (https=)
CN (1) CN113906676B (https=)
WO (1) WO2020241820A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12308818B2 (en) 2023-01-03 2025-05-20 Win Semiconductors Corp. Surface acoustic wave device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012176392A1 (ja) * 2011-06-24 2012-12-27 パナソニック株式会社 半導体装置及びその製造方法
WO2016080444A1 (ja) * 2014-11-18 2016-05-26 京セラ株式会社 弾性波素子、フィルタ素子および通信装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0318031A (ja) 1989-06-14 1991-01-25 Fujitsu Ltd 半導体装置の製造方法
JPH07307549A (ja) * 1994-05-11 1995-11-21 Toshiba Corp 薄膜配線パターンの形成方法および薄膜配線基板の製造方法
AU2690400A (en) * 1999-02-24 2000-09-14 Hitachi Maxell, Ltd. Ic device and its production method, and information carrier mounted with ic device and its production method
JP2001305996A (ja) * 2000-02-18 2001-11-02 Seiko Epson Corp 表示装置用基板及びその製造方法、並びに液晶装置及び電子機器
AU2002361093A1 (en) * 2001-12-28 2003-07-24 Matsushita Electric Industrial Co., Ltd. Surface acoustic wave device, electronic component using the device, and composite module
TWI232991B (en) * 2002-11-15 2005-05-21 Nec Lcd Technologies Ltd Method for manufacturing an LCD device
JP5561057B2 (ja) 2010-09-15 2014-07-30 株式会社村田製作所 電子部品及びその製造方法
JP6011108B2 (ja) * 2011-09-27 2016-10-19 日亜化学工業株式会社 半導体素子
JP2017073630A (ja) * 2015-10-06 2017-04-13 株式会社村田製作所 弾性波装置の製造方法及び弾性波装置
JP6884062B2 (ja) * 2017-07-25 2021-06-09 京セラ株式会社 配線基板
JP2019060819A (ja) * 2017-09-28 2019-04-18 日本特殊陶業株式会社 電子部品検査装置用配線基板

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012176392A1 (ja) * 2011-06-24 2012-12-27 パナソニック株式会社 半導体装置及びその製造方法
WO2016080444A1 (ja) * 2014-11-18 2016-05-26 京セラ株式会社 弾性波素子、フィルタ素子および通信装置

Also Published As

Publication number Publication date
WO2020241820A1 (ja) 2020-12-03
CN113906676A (zh) 2022-01-07
JP7268730B2 (ja) 2023-05-08
JPWO2020241820A1 (https=) 2020-12-03
KR20220002537A (ko) 2022-01-06
US20220077377A1 (en) 2022-03-10
CN113906676B (zh) 2025-07-25
US11985903B2 (en) 2024-05-14

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