KR102602338B1 - 기억 장치 - Google Patents

기억 장치 Download PDF

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Publication number
KR102602338B1
KR102602338B1 KR1020207016081A KR20207016081A KR102602338B1 KR 102602338 B1 KR102602338 B1 KR 102602338B1 KR 1020207016081 A KR1020207016081 A KR 1020207016081A KR 20207016081 A KR20207016081 A KR 20207016081A KR 102602338 B1 KR102602338 B1 KR 102602338B1
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South Korea
Prior art keywords
bit line
transistor
memory cells
cell array
layer
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KR1020207016081A
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English (en)
Korean (ko)
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KR20200093564A (ko
Inventor
타츠야 오누키
유키 오카모토
히사오 이케다
슈헤이 나가츠카
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4097—Bit-line organisation, e.g. bit-line layout, folded bit lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D87/00—Integrated devices comprising both bulk components and either SOI or SOS components on the same substrate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/02—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding parasitic signals
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/18—Bit line organisation; Bit line lay-out
    • H01L29/7869—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/312—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor with a bit line higher than the capacitor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/04—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding disturbances due to temperature effects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)
KR1020207016081A 2017-11-30 2018-11-19 기억 장치 Active KR102602338B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2017-229785 2017-11-30
JP2017229785 2017-11-30
PCT/IB2018/059084 WO2019106479A1 (en) 2017-11-30 2018-11-19 Memory device

Publications (2)

Publication Number Publication Date
KR20200093564A KR20200093564A (ko) 2020-08-05
KR102602338B1 true KR102602338B1 (ko) 2023-11-16

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020207016081A Active KR102602338B1 (ko) 2017-11-30 2018-11-19 기억 장치

Country Status (6)

Country Link
US (1) US11270997B2 (enExample)
JP (1) JP7337496B2 (enExample)
KR (1) KR102602338B1 (enExample)
CN (1) CN111357053B (enExample)
TW (1) TWI758567B (enExample)
WO (1) WO2019106479A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014027263A (ja) * 2012-06-15 2014-02-06 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
US11423975B2 (en) * 2018-02-23 2022-08-23 Semiconductor Energy Laboratory Co., Ltd. Memory device and method of operating the same
US11935964B2 (en) 2018-10-12 2024-03-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US11830951B2 (en) 2019-03-12 2023-11-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including transistor and capacitor
SG11202105865XA (en) * 2020-03-09 2021-10-28 Kioxia Corp Semiconductor memory device and method of manufacturing semiconductor memory device
DE102020127961B4 (de) * 2020-05-28 2025-08-21 Taiwan Semiconductor Manufacturing Co., Ltd. Speicherschaltung und schreibverfahren
US11450377B2 (en) * 2020-07-29 2022-09-20 Micron Technology, Inc. Apparatuses and methods including memory cells, digit lines, and sense amplifiers
US11393822B1 (en) 2021-05-21 2022-07-19 Micron Technology, Inc. Thin film transistor deck selection in a memory device

Citations (2)

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Publication number Priority date Publication date Assignee Title
US20060092748A1 (en) 2004-10-29 2006-05-04 Tadashi Miyakawa Semiconductor memory
US20130155790A1 (en) 2011-12-15 2013-06-20 Semiconductor Energy Laboratory Co., Ltd. Storage device

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US5276649A (en) 1989-03-16 1994-01-04 Mitsubishi Denki Kabushiki Kaisha Dynamic-type semiconductor memory device having staggered activation of column groups
JP2761644B2 (ja) 1989-03-16 1998-06-04 三菱電機株式会社 半導体記憶装置
JPH03238862A (ja) * 1990-02-15 1991-10-24 Mitsubishi Electric Corp 半導体記憶装置
JPH0494569A (ja) * 1990-08-10 1992-03-26 Matsushita Electric Ind Co Ltd 半導体集積回路装置
US6188598B1 (en) 1999-09-28 2001-02-13 Infineon Technologies North America Corp. Reducing impact of coupling noise
US6327169B1 (en) * 2000-10-31 2001-12-04 Lsi Logic Corporation Multiple bit line memory architecture
US6430076B1 (en) * 2001-09-26 2002-08-06 Infineon Technologies Ag Multi-level signal lines with vertical twists
JP2003242773A (ja) * 2002-02-14 2003-08-29 Matsushita Electric Ind Co Ltd 半導体記憶装置
US20070058468A1 (en) 2005-09-12 2007-03-15 Promos Technologies Pte.Ltd. Singapore Shielded bitline architecture for dynamic random access memory (DRAM) arrays
KR101820776B1 (ko) 2010-02-19 2018-01-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2012002186A1 (en) 2010-07-02 2012-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20130029464A (ko) * 2011-09-15 2013-03-25 윤재만 반도체 메모리 장치
CN103858171A (zh) 2011-10-04 2014-06-11 考文森智财管理公司 降低的噪声dram感测
TWI767772B (zh) 2014-04-10 2022-06-11 日商半導體能源研究所股份有限公司 記憶體裝置及半導體裝置

Patent Citations (2)

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US20060092748A1 (en) 2004-10-29 2006-05-04 Tadashi Miyakawa Semiconductor memory
US20130155790A1 (en) 2011-12-15 2013-06-20 Semiconductor Energy Laboratory Co., Ltd. Storage device

Also Published As

Publication number Publication date
TW201933355A (zh) 2019-08-16
WO2019106479A1 (en) 2019-06-06
US20200343244A1 (en) 2020-10-29
KR20200093564A (ko) 2020-08-05
JP7337496B2 (ja) 2023-09-04
TWI758567B (zh) 2022-03-21
US11270997B2 (en) 2022-03-08
CN111357053B (zh) 2024-05-28
JP2019102811A (ja) 2019-06-24
CN111357053A (zh) 2020-06-30

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