KR102550584B1 - 세미-글로벌 셔터 이미저 - Google Patents

세미-글로벌 셔터 이미저 Download PDF

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KR102550584B1
KR102550584B1 KR1020237008698A KR20237008698A KR102550584B1 KR 102550584 B1 KR102550584 B1 KR 102550584B1 KR 1020237008698 A KR1020237008698 A KR 1020237008698A KR 20237008698 A KR20237008698 A KR 20237008698A KR 102550584 B1 KR102550584 B1 KR 102550584B1
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pixels
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pixel
time
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KR20230042135A (ko
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아드리안 캘러
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매직 립, 인코포레이티드
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/44—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by partially reading an SSIS array
    • H04N25/443—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by partially reading an SSIS array by reading pixels from selected 2D regions of the array, e.g. for windowing or digital zooming
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/53—Control of the integration time
    • H04N25/531—Control of the integration time by controlling rolling shutters in CMOS SSIS
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/53—Control of the integration time
    • H04N25/532—Control of the integration time by controlling global shutters in CMOS SSIS
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/53—Control of the integration time
    • H04N25/533—Control of the integration time by using differing integration times for different sensor regions
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/53—Control of the integration time
    • H04N25/533—Control of the integration time by using differing integration times for different sensor regions
    • H04N25/535—Control of the integration time by using differing integration times for different sensor regions by dynamic region selection
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/7795—Circuitry for generating timing or clock signals
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Studio Devices (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Surgical Instruments (AREA)
  • Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
KR1020237008698A 2015-05-19 2016-05-19 세미-글로벌 셔터 이미저 Active KR102550584B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201562163730P 2015-05-19 2015-05-19
US62/163,730 2015-05-19
KR1020177036625A KR102511493B1 (ko) 2015-05-19 2016-05-19 세미-글로벌 셔터 이미저
PCT/US2016/033354 WO2016187469A1 (en) 2015-05-19 2016-05-19 Semi-global shutter imager

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KR20230042135A KR20230042135A (ko) 2023-03-27
KR102550584B1 true KR102550584B1 (ko) 2023-06-30

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US (4) US9948874B2 (enExample)
EP (1) EP3298773A4 (enExample)
JP (3) JP7029961B2 (enExample)
KR (2) KR102550584B1 (enExample)
CN (1) CN108141575B (enExample)
AU (1) AU2016264606B2 (enExample)
CA (1) CA2986476A1 (enExample)
HK (1) HK1252419A1 (enExample)
IL (4) IL287335B (enExample)
NZ (2) NZ737677A (enExample)
WO (1) WO2016187469A1 (enExample)

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KR102550584B1 (ko) 2015-05-19 2023-06-30 매직 립, 인코포레이티드 세미-글로벌 셔터 이미저
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